公开(公告)号：US20150311126A1

公开(公告)日：2015-10-29

申请号：US14739681

申请日：2015-06-15

Applicant: Texas Instruments Incorporated

Inventor： James Joseph Chambers ,  Hiroaki Niimi

IPC: H01L21/8238 ,  H01L29/423 ,  H01L21/28 ,  H01L29/51 ,  H01L21/322 ,  H01L29/40 ,  H01L29/66

CPC classification number: H01L21/823842 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/3221 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823857 ,  H01L27/092 ,  H01L27/11 ,  H01L29/401 ,  H01L29/42364 ,  H01L29/51 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/7833

Abstract: A process is disclosed of forming metal replacement gates for NMOS and PMOS transistors with oxygen in the PMOS metal gates and metal atom enrichment in the NMOS gates such that the PMOS gates have effective work functions above 4.85 eV and the NMOS gates have effective work functions below 4.25 eV. Metal work function layers in both the NMOS and PMOS gates are oxidized to increase their effective work functions to the desired PMOS range. An oxygen diffusion blocking layer is formed over the PMOS gate and an oxygen getter is formed over the NMOS gates. A getter anneal extracts the oxygen from the NMOS work function layers and adds metal atom enrichment to the NMOS work function layers, reducing their effective work functions to the desired NMOS range. Processes and materials for the metal work function layers, the oxidation process and oxygen gettering are disclosed.

Abstract translation: 公开了一种用于在PMOS金属栅中的氧和NMOS栅极中的金属原子富集的NMOS和PMOS晶体管形成金属替代栅极的工艺，使得PMOS栅极具有高于4.85eV的有效功函数，并且NMOS栅极具有以下有效的功函数 4.25 eV。 NMOS和PMOS栅极中的金属功函数层被氧化，以将它们的有效功函数增加到期望的PMOS范围。 在PMOS栅极上形成氧扩散阻挡层，在NMOS栅极上形成氧吸气剂。 吸气剂退火从NMOS功能层提取氧气，并将金属原子富集添加到NMOS功能层，将其有效功函数降低到所需的NMOS范围。 公开了金属加工功能层的工艺和材料，氧化工艺和吸氧剂。

公开(公告)号：US08748992B2

公开(公告)日：2014-06-10

申请号：US13856702

申请日：2013-04-04

Applicant: Texas Instruments Incorporated

Inventor： Brian K. Kirkpatrick ,  James Joseph Chambers

IPC: H01L21/70 ,  H01L29/78 ,  H01L29/51

CPC classification number: H01L29/518 ,  H01L21/28044 ,  H01L21/28202 ,  H01L29/78

Abstract: A method of forming an integrated circuit (IC) having at least one MOS device includes forming a SiON gate dielectric layer on a silicon surface. A gate electrode layer is deposited on the SiON gate layer and then patterning forms a gate stack. Exposed gate dielectric sidewalls are revealed by the patterning. A supplemental silicon oxide layer is formed on the exposed SiON sidewalls followed by nitriding. After nitriding, a post nitridation annealing (PNA) forms an annealed N-enhanced SiON gate dielectric layer including N-enhanced SiON sidewalls, wherein along lines of constant thickness a N concentration at the N-enhanced SiON sidewalls is ≧ the N concentration in a bulk of the annealed N-enhanced SiON gate layer −2 atomic %. A source and drain region on opposing sides of the gate stack are formed to define a channel region under the gate stack.

Abstract translation: 形成具有至少一个MOS器件的集成电路（IC）的方法包括在硅表面上形成SiON栅介质层。 在SiON栅极层上沉积栅电极层，然后构图形成栅叠层。 通过图案化揭示了暴露的栅极电介质侧壁。 在暴露的SiON侧壁上形成补充的氧化硅层，然后氮化。 氮化后，后氮化退火（PNA）形成包括N增强SiON侧壁的退火的N增强SiON栅极电介质层，其中沿着恒定厚度的线，N增强SiON侧壁处的N浓度为≥N 大部分退火的N增强SiON栅极层为-2原子％。 形成栅极堆叠的相对侧上的源极和漏极区域以限定栅极叠层下方的沟道区域。

公开(公告)号：US10439040B2

公开(公告)日：2019-10-08

申请号：US15636233

申请日：2017-06-28

Applicant: Texas Instruments Incorporated

Inventor： Hiroaki Niimi ,  James Joseph Chambers

IPC: H01L21/28 ,  H01L29/66 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78 ,  H01L21/02

Abstract: A process is disclosed of forming metal replacement gates for PMOS transistors with oxygen in the metal gates such that the PMOS gates have effective work functions above 4.85. Metal work function layers in the PMOS gates are oxidized at low temperature to increase their effective work functions to the desired PMOS range. Hydrogen may also be incorporated at an interface between the metal gates and underlying gate dielectrics. Materials for the metal work function layers and processes for the low temperature oxidation are disclosed.

公开(公告)号：US09721796B2

公开(公告)日：2017-08-01

申请号：US14923035

申请日：2015-10-26

Applicant: Texas Instruments Incorporated

Inventor： Hiroaki Niimi ,  James Joseph Chambers

IPC: H01L21/28 ,  H01L29/66 ,  H01L29/49 ,  H01L29/51 ,  H01L21/8238 ,  H01L29/78

CPC classification number: H01L29/66545 ,  H01L21/02244 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/51 ,  H01L29/517 ,  H01L29/518 ,  H01L29/7833

Abstract: A process is disclosed of forming metal replacement gates for PMOS transistors with oxygen in the metal gates such that the PMOS gates have effective work functions above 4.85. Metal work function layers in the PMOS gates are oxidized at low temperature to increase their effective work functions to the desired PMOS range. Hydrogen may also be incorporated at an interface between the metal gates and underlying gate dielectrics. Materials for the metal work function layers and processes for the low temperature oxidation are disclosed.

公开(公告)号：US20160336422A1

公开(公告)日：2016-11-17

申请号：US15222262

申请日：2016-07-28

Applicant: Texas Instruments Incorporated

Inventor： Hiroaki Niimi ,  James Joseph Chambers

IPC: H01L29/49 ,  H01L29/51 ,  H01L29/08 ,  H01L21/8238 ,  H01L21/28 ,  H01L21/285 ,  H01L27/092 ,  H01L29/66

CPC classification number: H01L29/4966 ,  H01L21/28088 ,  H01L21/28518 ,  H01L21/823814 ,  H01L21/823828 ,  H01L21/823842 ,  H01L21/823857 ,  H01L21/823864 ,  H01L27/092 ,  H01L29/0847 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/7833

Abstract: An integrated circuit containing metal replacement gates may be formed by forming a nitrogen-rich titanium-based barrier between a high-k gate dielectric layer and a metal work function layer of a PMOS transistor. The nitrogen-rich titanium-based barrier is less than 1 nanometer thick and has an atomic ratio of titanium to nitrogen of less than 43:57. The nitrogen-rich titanium-based barrier may be formed by forming a titanium based layer over the gate dielectric layer and subsequently adding nitrogen to the titanium based layer. The metal work function layer is formed over the nitrogen-rich titanium-based barrier.

Abstract translation: 可以通过在高k栅介质层和PMOS晶体管的金属功函数层之间形成富氮钛基阻挡层来形成包含金属替换栅的集成电路。 富氮钛基阻挡层小于1纳米厚，钛与氮的原子比小于43:57。 可以通过在栅极电介质层上形成钛基层并随后将氮添加到钛基层来形成富氮钛基阻挡层。 在富氮钛基屏障上形成金属功函数层。

公开(公告)号：US09087918B2

公开(公告)日：2015-07-21

申请号：US14146095

申请日：2014-01-02

Applicant: Texas Instruments Incorporated

Inventor： James Joseph Chambers ,  Hiroaki Niimi

IPC: H01L21/8238 ,  H01L27/092 ,  H01L27/11

CPC classification number: H01L21/823842 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/3221 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823857 ,  H01L27/092 ,  H01L27/11 ,  H01L29/401 ,  H01L29/42364 ,  H01L29/51 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/7833

Abstract: A process is disclosed of forming metal replacement gates for NMOS and PMOS transistors with oxygen in the PMOS metal gates and metal atom enrichment in the NMOS gates such that the PMOS gates have effective work functions above 4.85 eV and the NMOS gates have effective work functions below 4.25 eV. Metal work function layers in both the NMOS and PMOS gates are oxidized to increase their effective work functions to the desired PMOS range. An oxygen diffusion blocking layer is formed over the PMOS gate and an oxygen getter is formed over the NMOS gates. A getter anneal extracts the oxygen from the NMOS work function layers and adds metal atom enrichment to the NMOS work function layers, reducing their effective work functions to the desired NMOS range. Processes and materials for the metal work function layers, the oxidation process and oxygen gettering are disclosed.

Abstract translation: 公开了一种用于在PMOS金属栅中的氧和NMOS栅极中的金属原子富集的NMOS和PMOS晶体管形成金属替代栅极的工艺，使得PMOS栅极具有高于4.85eV的有效功函数，并且NMOS栅极具有以下有效的功函数 4.25 eV。 NMOS和PMOS栅极中的金属功函数层被氧化，以将它们的有效功函数增加到期望的PMOS范围。 在PMOS栅极上形成氧扩散阻挡层，在NMOS栅极上形成氧吸气剂。 吸气剂退火从NMOS功能层提取氧气，并将金属原子富集添加到NMOS功能层，将其有效功函数降低到所需的NMOS范围。 公开了金属加工功能层的工艺和材料，氧化工艺和吸氧剂。