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    REMOVAL OF LEAD FROM SOLID MATERIALS
    14.
    发明申请
    REMOVAL OF LEAD FROM SOLID MATERIALS 审中-公开
    从固体材料中去除铅

    公开(公告)号：US20150050199A1

    公开(公告)日：2015-02-19

    申请号：US14389142

    申请日：2013-04-05

    申请人： Michael B. Korzenski ,  Tianniu Chen ,  Ping Jiang

    发明人： Michael B. Korzenski ,  Tianniu Chen ,  Ping Jiang

    IPC分类号： C22B3/00

    CPC分类号： C22B13/045 ,  H01J9/52 ,  Y02P10/212 ,  Y02W30/60 ,  Y02W30/828

    摘要： A leaching composition that substantially removes lead from solid materials and a method of using said composition. Preferably, the concentration of lead in the solid materials following processing is low enough that the solid materials can be reused and/or disposed of at minimal cost to the processor. Preferably, the solid materials comprise glass, such as cathode ray tube glass.

    摘要翻译： 一种从固体材料中大量除去铅的浸出组合物和使用所述组合物的方法。 优选地，处理后的固体材料中的铅的浓度足够低，使得固体材料可以以最小的成本重新使用和/或处理。 优选地，固体材料包括玻璃，例如阴极射线管玻璃。

    Precursors for CVD/ALD of metal-containing films
    16.
    发明授权
    Precursors for CVD/ALD of metal-containing films 失效
    含金属膜CVD / ALD的前体

    公开(公告)号：US08168811B2

    公开(公告)日：2012-05-01

    申请号：US12507048

    申请日：2009-07-21

    申请人： Thomas M. Cameron ,  Chongying Xu ,  Tianniu Chen

    发明人： Thomas M. Cameron ,  Chongying Xu ,  Tianniu Chen

    IPC分类号： C07F9/00 ,  C07F15/00 ,  C07F5/06

    CPC分类号： C07C225/14 ,  C07F7/003

    摘要： Precursors useful for vapor phase deposition processes, e.g., CVD/ALD, to form metal-containing films on substrates. The precursors include, in one class, a central metal atom M to which is coordinated at least one ligand of formula (I): wherein: R1, R2 and R3 are each independently H or ogano moieties; and G1 is an electron donor arm substituent that increases the coordination of the ligand to the central metal atom M; wherein when G1 is aminoalkyl, the substituents on the amino nitrogen are not alkyl, fluoroalkyl, cycloaliphatic, or aryl, and are not connected to form a ring structure containing carbon, oxygen or nitrogen atoms. Also disclosed are ketoester, malonate and other precursors adapted for forming metal-containing films on substrates, suitable for use in the manufacture of microelectronic device products such as semiconductor devices and flat panel displays.

    摘要翻译： 用于气相沉积工艺（例如CVD / ALD）以在基底上形成含金属膜的前体。 前体在一类中包括配位至少一种式（I）配位体的中心金属原子M：其中：R 1，R 2和R 3各自独立地为H或无规部分; 并且G1是增加配体与中心金属原子M的配位的电子给体臂取代基; 其中当G1是氨基烷基时，氨基氮上的取代基不是烷基，氟烷基，脂环族或芳基，并且不连接形成含有碳，氧或氮原子的环结构。 还公开了适用于在诸如半导体器件和平板显示器的微电子器件产品的制造中用于在基底上形成含金属膜的酮酯，丙二酸酯和其它前体。

    TANTALUM AMIDO-COMPLEXES WITH CHELATE LIGANDS USEFUL FOR CVD AND ALD OF TaN AND Ta205 THIN FILMS
    18.
    发明申请
    TANTALUM AMIDO-COMPLEXES WITH CHELATE LIGANDS USEFUL FOR CVD AND ALD OF TaN AND Ta205 THIN FILMS 有权
    具有适用于TaN和Ta205薄膜的CVD和ALD的CHATEAL配体的TANTALUM AMIDO复合物

    公开(公告)号：US20100240918A1

    公开(公告)日：2010-09-23

    申请号：US12790835

    申请日：2010-05-30

    申请人： Tianniu Chen ,  Chongying Xu ,  Jeffrey F. Roeder ,  Thomas H. Baum

    发明人： Tianniu Chen ,  Chongying Xu ,  Jeffrey F. Roeder ,  Thomas H. Baum

    IPC分类号： C07F9/00

    CPC分类号： C23C16/18 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Tantalum compounds of Formula I hereof are disclosed, having utility as precursors for forming tantalum-containing films such as barrier layers. The tantalum compounds of Formula I may be deposited by CVD or ALD for forming semiconductor device structures including a dielectric layer, a barrier layer on the dielectric layer, and a copper metallization on the barrier layer, wherein the barrier layer includes a Ta-containing layer and sufficient carbon so that the Ta-containing layer is amorphous. According to one embodiment, the semiconductor device structure is fabricated by depositing the Ta-containing barrier layer, via CVD or ALD, from a precursor including the tantalum compound of Formula I hereof at a temperature below about 400° C. in a reducing or inert atmosphere, e.g., a gas or plasma optionally containing a reducing agent.

    摘要翻译： 公开了式I的钽化合物，其用作形成含钽膜如阻挡层的前体。 可以通过CVD或ALD沉积式I的钽化合物以形成包括电介质层，电介质层上的阻挡层和阻挡层上的铜金属化的半导体器件结构，其中阻挡层包括含Ta层 和足够的碳，使得含Ta层是无定形的。 根据一个实施例，半导体器件结构通过CVD或ALD从包含式I的钽化合物的前体在低于约400℃的还原或惰性的沉积中制备 气氛，例如任选地含有还原剂的气体或等离子体。

    PRECURSOR COMPOSITIONS FOR ALD/CVD OF GROUP II RUTHENATE THIN FILMS
    20.
    发明申请
    PRECURSOR COMPOSITIONS FOR ALD/CVD OF GROUP II RUTHENATE THIN FILMS 有权
    用于II组RUTHENATE薄膜的ALD / CVD的前体组合物

    公开(公告)号：US20100095865A1

    公开(公告)日：2010-04-22

    申请号：US12523704

    申请日：2007-03-12

    申请人： Chongying Xu ,  Bryan C. Hendrix ,  Thomas M. Cameron ,  Jeffrey F. Roeder ,  Matthias Stender ,  Tianniu Chen

    发明人： Chongying Xu ,  Bryan C. Hendrix ,  Thomas M. Cameron ,  Jeffrey F. Roeder ,  Matthias Stender ,  Tianniu Chen

    IPC分类号： C23C16/18 ,  C23C16/30

    CPC分类号： C07F17/02

    摘要： Precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of strontium ruthenium oxide (SrRuO3) thin films, e.g., in the manufacture of microelectronic devices, as well as processes of making and using such precursors, and precursor supply systems containing such precursor compositions in packaged form. Cyclopentadienyl compounds of varied type are described, including cyclopentadienyl as well as non cyclopentadienyl ligands coordinated to ruthenium, strontium or barium central atoms. The precursors of the invention are useful for forming contacts for microelectronic memory device structures, and in a specific aspect for selectively coating copper metallization without deposition on associated dielectric, under deposition conditions in a forming gas ambient.

    摘要翻译： 用于原子层沉积（ALD）和氧化钌氧化物（SrRuO 3）薄膜的化学气相沉积（CVD）的前体组合物，例如在微电子器件的制造中，以及制备和使用这些前体的方法以及前体供应 含有包装形式的前体组合物的体系。 描述了不同类型的环戊二烯基化合物，包括环戊二烯基以及与钌，锶或钡中心原子配位的非环戊二烯基配位体。 本发明的前体可用于形成微电子存储器件结构的接触，并且在特定方面，用于在形成气体环境中的沉积条件下，在相关联的电介质上不沉积而选择性地涂覆铜金属化。