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公开(公告)号:US20200381224A1
公开(公告)日:2020-12-03
申请号:US16883500
申请日:2020-05-26
Applicant: Tokyo Electron Limited
Inventor: Taro IKEDA , Eiki KAMATA , Mikio SATO
Abstract: A plasma density monitor for monitoring a plasma density of surface wave plasma in a chamber accommodating a substrate and performs a plasma process on the substrate. The monitor includes: a monopole antenna installed to extend from a wall of the chamber toward an interior of the chamber and to be perpendicular to an inner wall surface of the chamber, and configured to receive a surface wave; a coaxial line configured to extract a detection value from a signal received by the monopole antenna; a length adjuster configured to adjust a length of the monopole antenna; and a controller configured to control the length adjuster so as to obtain a wavelength of the surface wave and the plasma density of the surface wave plasma from the wavelength of the surface wave.
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公开(公告)号:US20250104977A1
公开(公告)日:2025-03-27
申请号:US18885219
申请日:2024-09-13
Applicant: Tokyo Electron Limited
Inventor: Taro IKEDA , Eiki KAMATA
IPC: H01J37/32
Abstract: There is provided a plasma source comprising: a housing that defines a plasma generation space; a gas inlet disposed at the housing and configured to introduce a gas; a power supply part disposed at the housing and configured to supply a radio frequency (RF) power; a supply port disposed at the housing and configured to supply active species of plasma produced from the gas in the plasma generation space; a dielectric plate that is disposed at the housing, transmits the RF power from the power supply part to the plasma generation space, and has an opening at a center thereof; a slot formed between the power supply part and the dielectric plate and through which the RF power propagates; and a gas supply line disposed at the housing, and having one end connected to the gas inlet and the other end from which a gas is supplied to the opening.
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公开(公告)号:US20240404805A1
公开(公告)日:2024-12-05
申请号:US18690810
申请日:2022-09-05
Applicant: Tokyo Electron Limited
Inventor: Mikio SATO , Eiki KAMATA , Taro IKEDA , Nobuhiko YAMAMOTO
IPC: H01J37/32
Abstract: A plasma processing apparatus includes a control device and configured to plasmarize a gas supplied to an interior of a processing container to perform a plasma processing on an object to be processed, wherein the control device includes: a measurer configured to measure an electron energy distribution function of plasma in the interior of the processing container, and a parameter changer configured to change parameters relating to the plasma processing so that the electron energy distribution function measured by the measurer during the plasma processing approaches a target electron energy distribution function.
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公开(公告)号:US20240203692A1
公开(公告)日:2024-06-20
申请号:US18590058
申请日:2024-02-28
Applicant: Tokyo Electron Limited , The University of Shiga Prefecture
Inventor: Shin OOWADA , Kazushi KANEKO , Masaaki MATSUKUMA , Eiki KAMATA , Satoru KAWAKAMI , Taro IKEDA , Osamu SAKAI
IPC: H01J37/32
CPC classification number: H01J37/32284 , H01J37/3222 , H01J37/32238 , H01J37/32256 , H01J37/32715 , H01J2237/327
Abstract: A plasma processing apparatus includes a processing container, an electromagnetic wave generator, and a resonator array structure. The processing container provides a processing space. The electromagnetic wave generator generates an electromagnetic wave for plasma excitation that is supplied to the processing space. The resonator array structure is formed by arranging resonators configured to resonate with a magnetic field component of the electromagnetic wave, each of the resonators having a size smaller than a wavelength of the electromagnetic wave, and is positioned in the processing container.
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公开(公告)号:US20240186113A1
公开(公告)日:2024-06-06
申请号:US18515099
申请日:2023-11-20
Applicant: TOKYO ELECTRON LIMITED
Inventor: Kazushi KANEKO , Hiroshi KONDO , Eiki KAMATA , Satoru KAWAKAMI
IPC: H01J37/32
CPC classification number: H01J37/32247
Abstract: There is a plasma processing apparatus comprising: a processing chamber configured to provide a processing space; an electromagnetic wave generator configured to generate electromagnetic waves for plasma excitation supplied to the processing space; a dielectric provided with a first surface facing the processing space; and an electromagnetic wave supply portion configured to supply the electromagnetic waves to the processing space through the dielectric, wherein the dielectric includes: a cell serving as a plasma generation space on the first surface side, a plurality of grooves formed on a second surface opposite to the first surface, the grooves surrounding the cell without communicating with the cell; and resonators including C-shaped ring members made of conductors inserted into the plurality of grooves, wherein the resonators are capable of resonating with magnetic field components of the electromagnetic waves and have a size smaller than a wavelength of the electromagnetic wave.
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公开(公告)号:US20240030008A1
公开(公告)日:2024-01-25
申请号:US18353757
申请日:2023-07-17
Applicant: TOKYO ELECTRON LIMITED
Inventor: Eiki KAMATA , Taro HAYAKAWA , Taro IKEDA
IPC: H01J37/32
CPC classification number: H01J37/32715 , H01J37/32357 , H01J37/3222 , H01J2237/20214 , H01J2237/20285
Abstract: A plasma processing apparatus disclosed herein includes a stage disposed in a processing container and configured to mount thereon a substrate, a rotary driving mechanism configured to rotatably drive the stage, and a plurality of plasma sources provided on an upper wall of the processing container facing the stage. The plurality of plasma sources are not arranged axially symmetrically with respect to a rotation axis of the stage.
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公开(公告)号:US20210134560A1
公开(公告)日:2021-05-06
申请号:US17083709
申请日:2020-10-29
Applicant: Tokyo Electron Limited
Inventor: Eiki KAMATA , Taro IKEDA , Mikio SATO , Nobuhiko YAMAMOTO
Abstract: There is provided a plasma processing apparatus including: a chamber having a processing space in which a plasma processing is performed on a substrate and a synthetic space in which electromagnetic waves are synthesized; a dielectric window configured to partition the processing space and the synthetic space; an antenna unit including a plurality of antennas configured to radiate the electromagnetic waves to the synthetic space; an electromagnetic wave output part configured to output the electromagnetic waves to the antenna unit; and a controller configured to control the antenna unit to function as the phased array antenna, wherein the plurality of antennas are helical antennas.
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公开(公告)号:US20210082727A1
公开(公告)日:2021-03-18
申请号:US17018532
申请日:2020-09-11
Applicant: TOKYO ELECTRON LIMITED
Inventor: Taro IKEDA , Atsushi KUBO , Eiki KAMATA , Nobuhiko YAMAMOTO
IPC: H01L21/67 , H01L21/66 , C23C16/455 , C23C16/52 , H01L21/02
Abstract: A plasma processing apparatus includes: a processing container; a substrate holder disposed within the processing container and configured to hold a substrate thereon; a dielectric window disposed below the substrate holder; and a plurality of phased array antennas disposed below the dielectric window and configured to irradiate a plurality of electromagnetic waves.
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公开(公告)号:US20250095973A1
公开(公告)日:2025-03-20
申请号:US18967551
申请日:2024-12-03
Applicant: Tokyo Electron Limited , The University of Shiga Prefecture
Inventor: Kazushi KANEKO , Eiki KAMATA , Osamu SAKAI
IPC: H01J37/32
Abstract: A plasma processing apparatus comprising: a processing chamber; an electromagnetic wave generator; a resonating structure formed by arranging resonators that are capable of resonating with a magnetic field component of electromagnetic waves; a measurement part configured to measure, for each frequency, a power of the electromagnetic waves traveling from the electromagnetic wave generator to the resonating structure and a power of transmitted waves, reflected waves, or scattered waves of the electromagnetic waves in the resonating structure; and a controller that performs measuring the power of the electromagnetic waves and the power of the transmitted waves, the reflected waves, or the scattered waves with the measurement part, and calculating a resonance frequency of the resonating structure based on frequency distribution of characteristic values of the resonating structure, calculated from the power of the electromagnetic waves and the power of the transmitted waves, the reflected waves, or the scattered waves.
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公开(公告)号:US20240412949A1
公开(公告)日:2024-12-12
申请号:US18674349
申请日:2024-05-24
Applicant: Tokyo Electron Limited
Inventor: Taro IKEDA , Eiki KAMATA , Kenta KATO
Abstract: There is a remote plasma device comprising: a housing made of a metal; a dielectric disposed to fill the housing; a gas supply port disposed at the housing, and configured to supply a gas into the housing; a gas exhaust port disposed at the housing, and configured to discharge the gas from the housing; a gas line that is formed in the dielectric and connects the gas supply port and the gas discharge port; and an electromagnetic wave supply part disposed at the housing, and configured to supply electromagnetic waves into the housing and produce plasma in the gas line.
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