公开(公告)号：US20220250190A1

公开(公告)日：2022-08-11

申请号：US17627702

申请日：2020-07-09

Applicant: Tokyo Electron Limited

Inventor： Hayato TANOUE ,  Yohei YAMASHITA ,  Yohei YAMAWAKI ,  Hirotoshi MORI

IPC: B23K26/53 ,  B23K26/08

Abstract: A processing apparatus configured to process a processing target object includes a holder configured to hold the processing target object; a holder moving mechanism configured to move the holder in a horizontal direction; a modifying device configured to radiate laser light to an inside of the processing target object to form multiple internal modification layers in a spiral shape; a modifying device moving mechanism configured to move the modifying device in the horizontal direction; and a controller configured to control an operation of forming the internal modification layers. The controller controls operations of the holder and the modifying device such that a spiral processing movement according to the formation of the internal modification layers and an eccentricity follow-up movement of correcting an eccentric amount between the holder and the processing target object held by the holder are shared by the holder and the modifying device.

公开(公告)号：US20210053150A1

公开(公告)日：2021-02-25

申请号：US16977495

申请日：2019-03-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirotoshi MORI ,  Yoshihiro KAWAGUCHI ,  Hayato TANOUE ,  Kazuya HISANO

IPC: B23K26/08 ,  B23K26/364 ,  B23K26/53

Abstract: A laser processing device configured to form an irradiation point of a laser beam for processing a substrate on a main surface of the substrate held on a substrate holder and configured to form processing traces by moving the radiation point on dividing target lines of the substrate includes a processing unit configured to repeat, while switching the dividing target lines, moving the substrate holder in a first axis direction to move the irradiation point on the dividing target lines and configured to rotate the substrate holder around a third axis during the moving of the substrate holder to change a direction of the substrate held on the substrate holder by 180°.

公开(公告)号：US20240379370A1

公开(公告)日：2024-11-14

申请号：US18780952

申请日：2024-07-23

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro KAWAGUCHI ,  Seiji NAKANO ,  Munehisa KODAMA ,  Hirotoshi MORI ,  Hayato TANOUE ,  Yohei YAMAWAKI

IPC: H01L21/304 ,  B24B7/22 ,  H01L21/683

Abstract: A substrate processing apparatus configured to process a substrate includes a substrate holder configured to hold, in a combined substrate in which a first substrate and a second substrate are bonded to each other, the second substrate; a periphery removing unit configured to remove, starting from a periphery modification layer formed on the first substrate along a boundary between a peripheral portion to be removed and a central portion of the first substrate, the peripheral portion from the combined substrate held by the substrate holder; and a collection unit equipped with a collection mechanism configured to collect the peripheral portion removed by the periphery removing unit.

公开(公告)号：US20240082957A1

公开(公告)日：2024-03-14

申请号：US18261520

申请日：2022-01-05

Applicant: Tokyo Electron Limited

Inventor： Hayato TANOUE ,  Kento ARAKI ,  Yohei YAMASHITA ,  Gousuke SHIRAISHI

IPC: B23K26/361 ,  B23K26/08 ,  B23K26/18 ,  B23K26/402 ,  H01L21/268

CPC classification number: B23K26/361 ,  B23K26/0823 ,  B23K26/083 ,  B23K26/18 ,  B23K26/402 ,  H01L21/268 ,  B23K2103/56

Abstract: A substrate processing apparatus configured to process a combined substrate in which a first substrate and a second substrate are stacked on top of each other includes a substrate holder configured to hold the combined substrate; a laser radiating unit configured to radiate laser light to a laser absorbing film in a pulse shape; a moving mechanism configured to move the substrate holder and the laser radiating unit relative to each other; and a controller configured to control the laser radiating unit and the moving mechanism. The controller performs, based on a thickness of the laser absorbing film, a control of selecting a position of a separation surface between the first substrate and the second substrate from one of a position between the first substrate and the laser absorbing film or a position between the a separation facilitating film and the second substrate.

公开(公告)号：US20230023577A1

公开(公告)日：2023-01-26

申请号：US17788776

申请日：2020-12-09

Applicant: Tokyo Electron Limited

Inventor： Yohei YAMASHITA ,  Hayato TANOUE ,  Yasutaka MIZOMOTO

IPC: H01L21/78 ,  H01L21/268 ,  H01L21/67

Abstract: A substrate processing method of transcribing, in a combined substrate in which a first substrate and a second substrate are bonded to each other, a device layer formed on a surface of the second substrate to the first substrate is provided. A laser beam is radiated in a pulse shape from a rear surface side of the second substrate to a laser absorption layer formed between the second substrate and the device layer.

公开(公告)号：US20220314373A1

公开(公告)日：2022-10-06

申请号：US17627700

申请日：2020-07-09

Applicant: Tokyo Electron Limited

Inventor： Hirotoshi MORI ,  Yohei YAMASHITA ,  Hayato TANOUE

IPC: B23K26/53 ,  B23K26/06

Abstract: A processing apparatus configured to process a processing target object includes a holder configured to hold the processing target object; a modifying device configured to radiate laser light to an inside of the processing target object to form multiple internal modification layers; and a controller. The controller controls an operation of forming the internal modification layers such that the internal modification layers are formed in a spiral shape from a diametrically outer side of the processing target object toward a diametrically inner side thereof, and such that an eccentric amount between the holder and the processing target object held by the holder in the forming of the internal modification layers toward the diametrically inner side of the processing target object becomes smaller than the eccentric amount in forming the internal modification layers toward the diametrically outer side of the processing target object.

公开(公告)号：US20220223475A1

公开(公告)日：2022-07-14

申请号：US17595658

申请日：2020-05-11

Applicant: Tokyo Electron Limited

Inventor： Hayato TANOUE ,  Yasutaka MIZOMOTO ,  Yohei YAMASHITA

IPC: H01L21/78 ,  H01L21/304 ,  H01L21/67 ,  H01L21/306

Abstract: A substrate processing method of processing a processing target substrate having a device formed on a front surface thereof includes preparing, in a first separation substrate on a side with the device and a second separation substrate on a side without the device separated from a device substrate, the second separation substrate; and bonding, by reusing the second separation substrate, the second separation substrate to a processing target substrate. A substrate processing system configured to process the processing target substrate having the device formed on the front surface thereof includes a bonding device configured to bond, in the first separation substrate on the side with the device and the second separation substrate on the side without the device separated from the device substrate, the second separation substrate to the processing target substrate by reusing the second separation substrate.

公开(公告)号：US20220184743A1

公开(公告)日：2022-06-16

申请号：US17598339

申请日：2020-03-02

Applicant: Tokyo Electron Limited

Inventor： Yohei YAMASHITA ,  Hayato TANOUE

IPC: B23K26/36 ,  B23K26/03 ,  B23K26/08 ,  B23K26/073 ,  B23K26/082 ,  B23K26/06 ,  B23K26/16

Abstract: A substrate processing system includes a laser processing apparatus including a holder and a radiation unit, the holder being configured to hold a substrate including a base substrate, an irregularity pattern formed on a main surface of the base substrate, and an irregularity layer formed along the irregularity pattern, the radiation unit being configured to radiate a laser beam to a protrusion of the irregularity layer to flatten the irregularity layer by removing the protrusion in a state that the substrate is held by the holder; a controller configured to control a position of an irradiation point of the laser beam; and a polishing apparatus configured to polish the irregularity layer in which the protrusion is removed with the laser beam to be flattened.

公开(公告)号：US20220181157A1

公开(公告)日：2022-06-09

申请号：US17594456

申请日：2020-04-07

Applicant: Tokyo Electron Limited

Inventor： Hayato TANOUE ,  Yohei YAMASHITA ,  Hirotoshi MORI

IPC: H01L21/268 ,  H01L21/324

Abstract: A processing apparatus configured to process a processing target object includes a modifying device configured to radiate laser light to an inside of the processing target object to form multiple modification layers along a plane direction; and a controller configured to control an operation of the modifying device at least. The controller controls the modifying device to form, in the forming of the modification layers, a first modification layer formation region in which cracks that develop from neighboring modification layers along the plane direction are not connected, and also controls the modifying device to form, in the forming of the modification layers, a second modification layer formation region in which cracks that develop from neighboring modification layers along the plane direction are connected.

公开(公告)号：US20210242010A1

公开(公告)日：2021-08-05

申请号：US17049076

申请日：2019-04-17

Applicant: Tokyo Electron Limited

Inventor： Hayato TANOUE

IPC: H01L21/02 ,  H01L21/268 ,  H01L21/304 ,  H01L21/67 ,  H01L21/687 ,  B23K26/53

Abstract: A substrate processing system configured to process a substrate includes an eccentricity detection device configured to detect, in a combined substrate in which a first substrate and a second substrate are bonded to each other, an eccentricity of the first substrate; a modification layer forming device configured to form a modification layer within the first substrate along a boundary between a peripheral portion to be removed and a central portion of the first substrate; and a periphery removing device configured to remove the peripheral portion starting from the modification layer.