公开(公告)号：US20160109502A1

公开(公告)日：2016-04-21

申请号：US14886425

申请日：2015-10-19

Applicant: Tokyo Electron Limited

Inventor： Kazushi Kaneko ,  Hideo Kato ,  Kazunori Funazaki ,  Eiji Takahashi

IPC: G01R31/25

CPC classification number: G01R31/255 ,  H01J37/3288 ,  H01J37/32926 ,  H01J37/3405 ,  H01J37/3476

Abstract: A magnetron can be inspected with high accuracy. A life of the magnetron is determined on the basis of a comparison between a current parameter, which indicates a current status of the magnetron and is obtained from the one or more measurement values for specifying a current status of the magnetron at a time point when a time period having a predetermined duration or more has elapsed after generation of a high frequency power by the magnetron is started, and a difference between a power of a progressive wave and a set power is equal to or lower than a first predetermined value and a power of a reflection wave is equal to or lower than a second predetermined value, and an initial parameter, which indicates an initial status of the magnetron and corresponds to the current parameter.

Abstract translation: 可以高精度地检查磁控管。 基于当前参数之间的比较来确定磁控管的寿命，当前参数表示磁控管的当前状态，并且从用于指定磁控管的当前状态的一个或多个测量值获得， 开始通过磁控管产生高频功率之后经过了预定持续时间以上的时间段，并且逐行波功率和设定功率之间的差异等于或低于第一预定值和功率 反射波等于或低于第二预定值，以及初始参数，其指示磁控管的初始状态并对应于当前参数。

公开(公告)号：US20150214011A1

公开(公告)日：2015-07-30

申请号：US14420102

申请日：2013-05-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazushi Kaneko ,  Kazunori Funazaki ,  Hideo Kato

IPC: H01J37/32

CPC classification number: H01J37/32128 ,  H01J37/3211 ,  H01J37/32119 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/32256 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/334 ,  H05H1/46 ,  H05H2001/4622

Abstract: Provided is a plasma processing apparatus that performs a processing on a processing target object using plasma. The plasma processing apparatus includes a processing container and a plasma generating mechanism including a high frequency generator disposed outside of the processing container to generate high frequency waves. The plasma generating mechanism generates plasma in the processing container using the high frequency waves and includes: a high frequency oscillator that oscillates the high frequency waves; a power supply unit that supplies a power to the high frequency oscillator; a waveguide path that propagates the high frequency waves oscillated by the high frequency oscillator to the processing container side which becomes a load side; and a voltage standing wave ratio variable mechanism that varies a voltage standing wave ratio of voltage standing waves formed in the waveguide path by the high frequency waves, according to the power supplied from the power supply unit.

Abstract translation: 提供了一种使用等离子体对加工对象物体进行处理的等离子体处理装置。 等离子体处理装置包括处理容器和等离子体生成机构，其包括设置在处理容器外部的高频发生器，以产生高频波。 等离子体产生机构使用高频波在处理容器中产生等离子体，并且包括：振荡高频波的高频振荡器; 电源单元，向高频振荡器供电; 将由高频振荡器振荡的高频波传播到成为负载侧的处理容器侧的波导路径; 以及电压驻波比可变机构，其根据从电源单元供给的电力，改变通过高频波形成在波导路径中的电压驻波的电压驻波比。

公开(公告)号：US20140225504A1

公开(公告)日：2014-08-14

申请号：US14177421

申请日：2014-02-11

Applicant: Tokyo Electron Limited

Inventor： Kazushi Kaneko ,  Naoki Matsumoto ,  Koji KOYAMA ,  Kazunori Funazaki ,  Hideo Kato ,  Kiyotaka Ishibashi

IPC: H01J37/32 ,  H03L5/02 ,  H05H1/46

CPC classification number: H01J37/32935 ,  H01J37/32192 ,  H03L5/02 ,  H05H1/46 ,  H05H2001/463 ,  H05H2001/4682

Abstract: A plasma processing apparatus includes a plasma generating device configured to generate a plasma within a processing vessel by using a high frequency wave generated by a microwave generator 41 including a magnetron 42 configured to generate the high frequency wave; detectors 54a and 54b configured to measure a power of a traveling wave that propagates to a load side and a power of a reflected wave reflected from the load side, respectively; and a voltage control circuit 53a configured to control a voltage supplied to the magnetron 42 by a power supply 43. Further, the voltage control circuit 53a includes a load control device configured to supply, to the magnetron 42, a voltage corresponding to a power calculated by adding a power calculated based on the power of the reflected wave measured by the detector 54b to the power of the traveling wave measured by the detector 54a.

Abstract translation: 等离子体处理装置包括：等离子体产生装置，其被配置为通过使用由包括被配置为产生高频波的磁控管42的微波发生器41产生的高频波在处理容器内产生等离子体; 被配置为分别测量传播到负载侧的行波的功率和从负载侧反射的反射波的功率的检测器54a和54b; 以及电压控制电路53a，其被配置为通过电源43控制提供给磁控管42的电压。此外，电压控制电路53a包括负载控制装置，其被配置为向磁控管42提供与计算出的功率相对应的电压 通过将由检测器54b测量的反射波的功率计算出的功率与由检测器54a测量的行波的功率相加。