公开(公告)号：US10074524B2

公开(公告)日：2018-09-11

申请号：US14386648

申请日：2013-03-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazushi Kaneko ,  Kazunori Funazaki ,  Hideo Kato

IPC: C23C14/00 ,  H01J37/34 ,  C23C16/511 ,  H03B9/10 ,  H01J37/32 ,  H03L1/00 ,  H03L5/02 ,  H05H1/46

CPC classification number: H01J37/3405 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32311 ,  H01J37/32935 ,  H01J2237/332 ,  H03B9/10 ,  H03L1/00 ,  H03L5/02 ,  H05H2001/4682

Abstract: A plasma processing apparatus (11) is provided with: a processing container (12), in which processing is performed using plasma; a plasma generating mechanism (19), which has a high frequency oscillator that oscillates high frequency, includes a high frequency generator that generates high frequency by being disposed outside of the processing container (12), and which generates plasma in the processing container (12) using the high frequency generated by means of the high frequency generator; a determining mechanism, which determines the state of the high frequency oscillator; and a notifying mechanism, which performs notification of determination results obtained from the determining mechanism.

公开(公告)号：US09977070B2

公开(公告)日：2018-05-22

申请号：US14886425

申请日：2015-10-19

Applicant: Tokyo Electron Limited

Inventor： Kazushi Kaneko ,  Hideo Kato ,  Kazunori Funazaki ,  Eiji Takahashi

IPC: G01R31/25 ,  H01J37/32 ,  H01J37/34

CPC classification number: G01R31/255 ,  H01J37/3288 ,  H01J37/32926 ,  H01J37/3405 ,  H01J37/3476

Abstract: A magnetron can be inspected with high accuracy. A life of the magnetron is determined on the basis of a comparison between a current parameter, which indicates a current status of the magnetron and is obtained from the one or more measurement values for specifying a current status of the magnetron at a time point when a time period having a predetermined duration or more has elapsed after generation of a high frequency power by the magnetron is started, and a difference between a power of a progressive wave and a set power is equal to or lower than a first predetermined value and a power of a reflection wave is equal to or lower than a second predetermined value, and an initial parameter, which indicates an initial status of the magnetron and corresponds to the current parameter.

公开(公告)号：US09159536B2

公开(公告)日：2015-10-13

申请号：US14333691

申请日：2014-07-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazushi Kaneko ,  Kazunori Funazaki ,  Yunosuke Hashimoto

IPC: H01J7/24 ,  H05B31/26 ,  H01J37/32 ,  H05H1/46

CPC classification number: H01J37/32183 ,  H01J37/32192 ,  H01J37/32311 ,  H01J37/32935 ,  H05H2001/4682

Abstract: A plasma processing apparatus includes a processing container and a plasma generating mechanism including a high-frequency oscillator. The arrangement is configured to generate plasma within the processing container by using a high frequency wave oscillated by the high-frequency oscillator. In addition, an impedance regulator is configured to adjust impedance to be applied to the high-frequency oscillator. Further, a determining unit is configured to change the impedance to be adjusted by the impedance regulator and to determine an abnormal oscillation of the high-frequency oscillator based on (a) a component of a center frequency of a fundamental wave that is the high frequency wave oscillated by the high-frequency oscillator, and (b) a component of a peripheral frequency present at both ends of a predetermined frequency band centered around the center frequency of the fundamental wave in a state where the impedance is changed.

Abstract translation: 等离子体处理装置包括处理容器和包括高频振荡器的等离子体产生机构。 该配置被配置为通过使用由高频振荡器振荡的高频波来在处理容器内产生等离子体。 此外，阻抗调节器被配置为调节要施加到高频振荡器的阻抗。 此外，确定单元被配置为改变由阻抗调节器调节的阻抗，并且基于（a）作为高频的基波的中心频率的分量来确定高频振荡器的异常振荡 由高频振荡器振荡的波，以及（b）在阻抗变化的状态下以基波的中心频率为中心的预定频带的两端存在的外围频率的分量。

公开(公告)号：US10109463B2

公开(公告)日：2018-10-23

申请号：US15064698

申请日：2016-03-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazushi Kaneko ,  Hideo Kato ,  Kazunori Funazaki ,  Yuji Otsuka ,  Shinji Kawada

IPC: H01J37/32

Abstract: A microwave automatic matcher includes a movable body, a driving unit, a matching control unit, a reflection coefficient measuring unit, and a setting unit. The matching control unit consecutively moves the movable body from a start position in one direction by a distance of a difference between the start position and the target position in a matching operation carried out for the plasma process and then variably controls the position of the movable body until the measurement of the reflection coefficient obtained by the reflection coefficient measuring unit falls within the first neighboring range by monitoring the measurement of the reflection coefficient.

公开(公告)号：US09418822B2

公开(公告)日：2016-08-16

申请号：US14177421

申请日：2014-02-11

Applicant: Tokyo Electron Limited

Inventor： Kazushi Kaneko ,  Naoki Matsumoto ,  Koji Koyama ,  Kazunori Funazaki ,  Hideo Kato ,  Kiyotaka Ishibashi

IPC: H01J37/32 ,  H05H1/46 ,  H03L5/02

CPC classification number: H01J37/32935 ,  H01J37/32192 ,  H03L5/02 ,  H05H1/46 ,  H05H2001/463 ,  H05H2001/4682

Abstract: A plasma processing apparatus includes a plasma generating device configured to generate a plasma within a processing vessel by using a high frequency wave generated by a microwave generator 41 including a magnetron 42 configured to generate the high frequency wave; detectors 54a and 54b configured to measure a power of a traveling wave that propagates to a load side and a power of a reflected wave reflected from the load side, respectively; and a voltage control circuit 53a configured to control a voltage supplied to the magnetron 42 by a power supply 43. Further, the voltage control circuit 53a includes a load control device configured to supply, to the magnetron 42, a voltage corresponding to a power calculated by adding a power calculated based on the power of the reflected wave measured by the detector 54b to the power of the traveling wave measured by the detector 54a.

Abstract translation: 等离子体处理装置包括：等离子体产生装置，其被配置为通过使用由包括被配置为产生高频波的磁控管42的微波发生器41产生的高频波在处理容器内产生等离子体; 被配置为分别测量传播到负载侧的行波的功率和从负载侧反射的反射波的功率的检测器54a和54b; 以及电压控制电路53a，其被配置为通过电源43控制提供给磁控管42的电压。此外，电压控制电路53a包括负载控制装置，其被配置为向磁控管42提供与计算出的功率相对应的电压 通过将由检测器54b测量的反射波的功率计算出的功率与由检测器54a测量的行波的功率相加。

公开(公告)号：US20150047974A1

公开(公告)日：2015-02-19

申请号：US14386648

申请日：2013-03-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazushi Kaneko ,  Kazunori Funazaki ,  Hideo Kato

IPC: H01J37/34 ,  H03L1/00

CPC classification number: H01J37/3405 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32311 ,  H01J37/32935 ,  H01J2237/332 ,  H03B9/10 ,  H03L1/00 ,  H03L5/02 ,  H05H2001/4682

Abstract: A plasma processing apparatus (11) is provided with: a processing container (12), in which processing is performed using plasma; a plasma generating mechanism (19), which has a high frequency oscillator that oscillates high frequency, includes a high frequency generator that generates high frequency by being disposed outside of the processing container (12), and which generates plasma in the processing container (12) using the high frequency generated by means of the high frequency generator; a determining mechanism, which determines the state of the high frequency oscillator; and a notifying mechanism, which performs notification of determination results obtained from the determining mechanism.

Abstract translation: 一种等离子体处理装置（11）具有：处理容器（12），其中使用等离子体进行处理; 具有高频振荡器的等离子体产生机构（19）包括：高频发生器，其通过设置在处理容器（12）的外部而产生高频，并且在处理容器（12）中产生等离子体 ）使用通过高频发生器产生的高频; 确定机构，其确定高频振荡器的状态; 以及通知机构，其执行从确定机构获得的确定结果的通知。

公开(公告)号：US20150007940A1

公开(公告)日：2015-01-08

申请号：US14380331

申请日：2013-01-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazushi Kaneko ,  Kazunori Funazaki ,  Hideo Kato

IPC: H01J37/32 ,  C23C16/52 ,  H01J37/34 ,  C23C16/511

Abstract: Provided is a plasma processing device which processes an object to be processed using plasma. The plasma processing device includes: a processing container configured to perform a processing by the plasma therein; and a plasma generation mechanism including a high-frequency generator disposed outside the processing container to generate high-frequency waves. The plasma generation mechanism is configured to generate the plasma in the processing container using the high-frequency waves generated by the high-frequency generator. The high-frequency generator includes a high-frequency oscillator configured to oscillate the high-frequency waves and an injection unit configured to inject a signal into the high-frequency oscillator. The signal has a frequency which is the same as a fundamental frequency oscillated by the high-frequency oscillator and has reduced different frequency components.

Abstract translation: 提供了一种使用等离子体处理待处理物体的等离子体处理装置。 等离子体处理装置包括：处理容器，被配置为通过其中的等离子体进行处理; 以及等离子体产生机构，其包括设置在处理容器外部的高频发生器，以产生高频波。 等离子体产生机构被配置为使用由高频发生器产生的高频波在处理容器中产生等离子体。 高频发生器包括配置为振荡高频波的高频振荡器和被配置为将信号注入到高频振荡器中的注入单元。 该信号具有与由高频振荡器振荡的基频相同的频率，并且具有降低的不同频率分量。

公开(公告)号：US10510513B2

公开(公告)日：2019-12-17

申请号：US14380331

申请日：2013-01-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazushi Kaneko ,  Kazunori Funazaki ,  Hideo Kato

IPC: H01J37/32 ,  H05H1/46 ,  H01Q21/06 ,  H01Q21/20 ,  C23C16/511 ,  C23C16/52 ,  H01J37/34

Abstract: Provided is a plasma processing device which processes an object to be processed using plasma. The plasma processing device includes: a processing container configured to perform a processing by the plasma therein; and a plasma generation mechanism including a high-frequency generator disposed outside the processing container to generate high-frequency waves. The plasma generation mechanism is configured to generate the plasma in the processing container using the high-frequency waves generated by the high-frequency generator. The high-frequency generator includes a high-frequency oscillator configured to oscillate the high-frequency waves and an injection unit configured to inject a signal into the high-frequency oscillator. The signal has a frequency which is the same as a fundamental frequency oscillated by the high-frequency oscillator and has reduced different frequency components.

公开(公告)号：US20190057843A1

公开(公告)日：2019-02-21

申请号：US15999001

申请日：2018-08-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazushi Kaneko ,  Kazunori Funazaki ,  Koji Itadani ,  Kensuke Fukata ,  Kouki Uchida

IPC: H01J37/32 ,  H03L5/02 ,  H05H1/46

Abstract: An apparatus includes a chamber main body, a microwave output device that generates a microwave having a bandwidth, a wave guide tube that is connected between the microwave output device and the chamber main body, and tuner that is provided in the wave guide tube. The microwave output device generates a microwave of which power is pulse-modulated to have a high level and a low level. The tuner includes a stub configured to be adjusted a protrusion amount with respect to an internal space of the wave guide tube, a tuner wave detection unit that detects a measured value corresponding to power of a microwave in the wave guide tube at a timing based on the pulse frequency and the setting duty ratio, and a tuner control unit that adjusts a protrusion amount of the stub on the basis of the measured value detected by the tuner wave detection unit.

公开(公告)号：US09373483B2

公开(公告)日：2016-06-21

申请号：US14420102

申请日：2013-05-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazushi Kaneko ,  Kazunori Funazaki ,  Hideo Kato

IPC: H01J37/32 ,  H05H1/46

CPC classification number: H01J37/32128 ,  H01J37/3211 ,  H01J37/32119 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/32256 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/334 ,  H05H1/46 ,  H05H2001/4622

Abstract: Provided is a plasma processing apparatus that performs a processing on a processing target object using plasma. The plasma processing apparatus includes a processing container and a plasma generating mechanism including a high frequency generator disposed outside of the processing container to generate high frequency waves. The plasma generating mechanism generates plasma in the processing container using the high frequency waves and includes: a high frequency oscillator that oscillates the high frequency waves; a power supply unit that supplies a power to the high frequency oscillator; a waveguide path that propagates the high frequency waves oscillated by the high frequency oscillator to the processing container side which becomes a load side; and a voltage standing wave ratio variable mechanism that varies a voltage standing wave ratio of voltage standing waves formed in the waveguide path by the high frequency waves, according to the power supplied from the power supply unit.

Abstract translation: 提供了一种使用等离子体对加工对象物体进行处理的等离子体处理装置。 等离子体处理装置包括处理容器和等离子体生成机构，其包括设置在处理容器外部的高频发生器，以产生高频波。 等离子体产生机构使用高频波在处理容器中产生等离子体，并且包括：振荡高频波的高频振荡器; 电源单元，向高频振荡器供电; 将由高频振荡器振荡的高频波传播到成为负载侧的处理容器侧的波导路径; 以及电压驻波比可变机构，其根据从电源单元供给的电力，改变由高频波形成的波导路径中的电压驻波的电压驻波比。