公开(公告)号：US20230377893A1

公开(公告)日：2023-11-23

申请号：US18027722

申请日：2021-09-15

Applicant: Tokyo Electron Limited

Inventor： Shunji YAMAKAWA ,  Tadahiro ISHIZAKA ,  Masato SAKAMOTO ,  Kohichi SATOH

IPC: H01L21/285 ,  H01L21/768 ,  C23C16/18

CPC classification number: H01L21/28568 ,  H01L21/76879 ,  C23C16/18

Abstract: A method for manufacturing a semiconductor device that includes forming a ruthenium film on a conductive film formed on a substrate for manufacture of the semiconductor device, wherein the conductive film includes a metal that increases an electrical resistance between the conductive film and the ruthenium film by interfacial diffusion between the conductive film and the ruthenium film, and wherein the method comprises forming the ruthenium film on the conductive film by alternately repeating a plurality of times: forming a ruthenium thin film by supplying a ruthenium raw material gas to the substrate on which the conductive film is formed; and then supplying a boron compound gas to the ruthenium thin film.

公开(公告)号：US20230272523A1

公开(公告)日：2023-08-31

申请号：US18002950

申请日：2021-06-23

Applicant: Tokyo Electron Limited

Inventor： Yuichi FURUYA ,  Kohichi SATOH ,  Masato ARAKI

IPC: C23C16/16 ,  C23C16/455

CPC classification number: C23C16/16 ,  C23C16/45512 ,  C23C16/45561 ,  C23C16/45589

Abstract: A deposition method performed using a deposition apparatus is provided. The deposition apparatus includes: a source line configured to supply Ru3(CO)12 contained in a raw material container into a chamber; a CO gas line configured to supply a CO gas into the raw material container; a bypass line connecting the source line and the CO gas line, and forming a line that does not pass through the raw material container; and a first valve connected to the source line. The deposition method includes: opening the first valve to supply Ru3(CO)12 and the CO gas from the raw material container through the source line; and controlling a pressure in the source line such that the pressure in the source line is a predetermined first pressure or more, and closing the first valve to stop supplying of Ru3(CO)12 and the CO gas to the chamber.

公开(公告)号：US20230167555A1

公开(公告)日：2023-06-01

申请号：US17991316

申请日：2022-11-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tomoyuki GOMI ,  Masayuki MOROI ,  Yuichi FURUYA ,  Kohichi SATOH

IPC: C23C16/52 ,  C23C16/16 ,  C23C16/44 ,  C23C16/448

CPC classification number: C23C16/52 ,  C23C16/16 ,  C23C16/4408 ,  C23C16/4481

Abstract: A source gas supply method for supplying a source gas to a processing part through a line by a carrier gas is provided. The source gas is generated by vaporizing a film forming source by heating a source container in which the film forming source is stored and a filling gas is filled. The method comprises replacing the filling gas in the source container with a replacement gas that does not deteriorate the source gas, determining whether or not the replacement with the replacement gas has been performed by measuring a pressure in the line using a pressure gauge, and heating the source container and supplying the source gas when it is determined that the replacement with the replacement gas has been performed.

公开(公告)号：US20190153597A1

公开(公告)日：2019-05-23

申请号：US16193297

申请日：2018-11-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kohichi SATOH ,  Hideaki YAMASAKI ,  Motoko NAKAGOMI ,  Junya OKA

IPC: C23C16/458 ,  H01L21/687 ,  H01J37/32

Abstract: There is provided a substrate mounting table for use in a plasma-based processing apparatus that performs a plasma-based process on a substrate inside a processing container, which includes a substrate mounting portion having a front surface subjected to a mirroring treatment and on which the substrate is mounted, and an edge portion located around the substrate mounting portion and treated to have an uneven shape.