公开(公告)号：US20230227976A1

公开(公告)日：2023-07-20

申请号：US18096365

申请日：2023-01-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takuya KAWAGUCHI ,  Takanobu HOTTA ,  Hideaki YAMASAKI

IPC: C23C16/455 ,  C23C16/08 ,  C23C16/02

CPC classification number: C23C16/45553 ,  C23C16/08 ,  C23C16/0209 ,  C23C16/45559

Abstract: There is provided a film forming method for forming a tungsten film, comprising: preparing a substrate; and forming a tungsten film on the substrate. A chlorine-containing tungsten film whose film stress is adjusted by chlorine concentration in the film is formed as at least a part of the tungsten film.

公开(公告)号：US20190218662A1

公开(公告)日：2019-07-18

申请号：US16245863

申请日：2019-01-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takeshi ITATANI ,  Hideaki YAMASAKI

IPC: C23C16/44 ,  C23C16/458 ,  C23C16/455 ,  C23C16/34 ,  H01L21/02 ,  H01L21/285 ,  H01J37/32

CPC classification number: C23C16/4404 ,  C23C16/34 ,  C23C16/455 ,  C23C16/4581 ,  H01J37/3244 ,  H01L21/02186 ,  H01L21/02274 ,  H01L21/28556

Abstract: A method of pre-coating an inner surface of a chamber, which includes a surface of a substrate-supporting support base installed in an internal space in the chamber, includes: forming a first film on the inner surface by supplying a first gas; forming a second film on the first film by supplying a second gas; and forming a third film on the second film by supplying a third gas, wherein a flow rate ratio of a hydrogen-containing gas to a metal source gas in the first gas is set to be higher than flow rate ratios of the hydrogen-containing gas to the metal source gas in the second gas and the third gas, and wherein the flow rate of the metal source gas in the first gas is set to be lower than the flow rates of the metal source gas in the second gas and the third gas.

公开(公告)号：US20190153597A1

公开(公告)日：2019-05-23

申请号：US16193297

申请日：2018-11-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kohichi SATOH ,  Hideaki YAMASAKI ,  Motoko NAKAGOMI ,  Junya OKA

IPC: C23C16/458 ,  H01L21/687 ,  H01J37/32

Abstract: There is provided a substrate mounting table for use in a plasma-based processing apparatus that performs a plasma-based process on a substrate inside a processing container, which includes a substrate mounting portion having a front surface subjected to a mirroring treatment and on which the substrate is mounted, and an edge portion located around the substrate mounting portion and treated to have an uneven shape.

公开(公告)号：US20230227969A1

公开(公告)日：2023-07-20

申请号：US18096217

申请日：2023-01-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takuya KAWAGUCHI ,  Takanobu HOTTA ,  Hideaki YAMASAKI

IPC: C23C16/44 ,  C23C16/06 ,  C23C16/34

CPC classification number: C23C16/4404 ,  C23C16/06 ,  C23C16/34

Abstract: There is provided a stress reducing method comprising: preparing a film forming apparatus configured to form a tungsten film on a substrate in a chamber by supplying a tungsten raw material gas and a reducing gas into the chamber; and making at least a part of a tungsten film deposited on an in-chamber component into a chlorine-containing tungsten film whose film stress is reduced by adjusting a chlorine concentration, when performing precoating in the chamber and/or when forming the tungsten film on the substrate, using the tungsten raw material gas and the reducing gas.

公开(公告)号：US20230062123A1

公开(公告)日：2023-03-02

申请号：US17896904

申请日：2022-08-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshio TAKAGI ,  Takuya KAWAGUCHI ,  Takanobu HOTTA ,  Hideaki YAMASAKI ,  Takaya YAMAUCHI

IPC: C23C16/455 ,  C23C16/06 ,  H01L21/3205 ,  C23C16/458

Abstract: An apparatus for forming a film on a substrate includes: a processing container in which a reaction gas is supplied to a surface of the substrate; a stage installed in the processing container, configured to place the substrate and including a heater; a lifting shaft connected to an external lifting mechanism via a through port formed in the processing container; a casing installed between the processing container and the lifting mechanism and covering the lifting shaft; a lid member disposed to surround the lifting shaft with a gap interposed between the lifting shaft and the lid member, and installed in the processing container; a purge gas supplier configured to supply a purge gas into the casing; and a guide member disposed at a position facing the gap that opens toward an interior of the processing container and including a guide surface configured to guide the purge gas.

公开(公告)号：US20190027371A1

公开(公告)日：2019-01-24

申请号：US16038863

申请日：2018-07-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hideaki YAMASAKI ,  Takamichi KIKUCHI ,  Seishi MURAKAMI

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/768

Abstract: Provided is a method of removing a silicon oxide film of a workpiece having an insulating film and the silicon oxide film exposed at a bottom portion of an opening formed in the insulating film, including: forming a protective film containing carbon on a surface of the workpiece, wherein the protective film has a first region extending along a side wall surface of the insulating film that defines the opening and a second region extending on the silicon oxide film: removing the second region of the protective film and the silicon oxide film by sputter etching with ions from plasma of a first inert gas; and removing a residue of the silicon oxide film by chemical etching. The step of forming the protective film includes executing a plurality of cycles.

公开(公告)号：US20240379377A1

公开(公告)日：2024-11-14

申请号：US18648903

申请日：2024-04-29

Applicant: Tokyo Electron Limited

Inventor： Tadahiro ISHIZAKA ,  Shinya OKABE ,  Hideaki YAMASAKI

IPC: H01L21/3205 ,  C23C16/52 ,  H01L21/02 ,  H01L21/321

Abstract: A substrate processing method includes: by supplying a first metal halide gas including a first metal to a substrate in which an insulator layer is deposited on a silicon layer and a recess portion is formed in the insulator layer, forming a metal layer of the first metal included in the first metal halide gas on a surface of the silicon layer exposed in the recess portion; and subsequently, by supplying a second metal halide gas, which includes a second metal different from the first metal and reacts with the first metal, to the substrate in which the silicon of the silicon layer is diffused to the metal layer to form a metal silicide layer, removing the first metal adhering to a side wall surface of the recess portion.

公开(公告)号：US20230124029A1

公开(公告)日：2023-04-20

申请号：US17938335

申请日：2022-10-06

Applicant: Tokyo Electron Limited

Inventor： Kazuki DEMPOH ,  Daeho KIM ,  Atsushi MATSUMOTO ,  Hideaki YAMASAKI

IPC: C23C16/44 ,  C23C16/08

Abstract: A particle suppression method includes a) supplying a first processing gas containing a halogen element and a metal element into a chamber in which a substrate is accommodated and plasmatizing the first processing gas to form a film containing the metal element on the substrate, b) reducing a surface of a deposit formed on an inner wall of the chamber by supplying a second processing gas including hydrogen gas into the chamber and turning the second processing gas into plasma, and c) nitriding the reduced surface of the deposit by supplying a third processing gas containing a nitrogen element into the chamber.

公开(公告)号：US20220396875A1

公开(公告)日：2022-12-15

申请号：US17805062

申请日：2022-06-02

Applicant: Tokyo Electron Limited

Inventor： Takanobu HOTTA ,  Takuya KAWAGUCHI ,  Hideaki YAMASAKI ,  Toshio TAKAGI ,  Takashi KAKEGAWA

IPC: C23C16/455 ,  C23C16/44 ,  H01L21/205

Abstract: A showerhead includes a shower plate, a base member in which a gas flow passage is provided, the base member fixing the shower plate, a plurality of gas supply members disposed in a gas diffusion space and connected to the gas flow passage, the gas diffusion space being formed between the shower plate and the base member, and a flow adjusting plate disposed in the gas diffusion space, the flow adjusting plate being disposed on an outer periphery on an outer side from the plurality of gas supply members.

公开(公告)号：US20190301947A1

公开(公告)日：2019-10-03

申请号：US16371739

申请日：2019-04-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hideaki YAMASAKI ,  Takashi MOCHIZUKI ,  Takeshi ITATANI

IPC: G01K7/02 ,  G01K1/14

Abstract: There is provided a thermocouple-fixing jig for fixing a thermocouple to a linear heater, the thermocouple-fixing jig comprising a first member and a second member configured to hold the linear heater therebetween, wherein the second member comprises a first holding portion and a second holding portion that hold a temperature detection part of the thermocouple.