公开(公告)号：US20180366337A1

公开(公告)日：2018-12-20

申请号：US16000951

申请日：2018-06-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Motoko NAKAGOMI ,  Kohichi SATOH

IPC: H01L21/311 ,  H01L21/67

Abstract: A method of etching a film of a workpiece, which includes: measuring a second flow rate of a first gas based on an increase rate of an internal pressure of a first chamber in a state in which a valve is closed and the first gas is supplied into the first chamber at a first flow rate adjusted by a flow rate controller, and calibrating the flow rate controller using the measured second flow rate; supplying a second gas into the first chamber; exhausting the first chamber; supplying a mixed gas of the first and second gases into the first chamber with the workpiece not mounted on a stage; forming a reaction product from the film by supplying the mixed gas into the first chamber with the workpiece mounted on the stage; and removing the reaction product by heating the workpiece with the workpiece accommodated in a second chamber.

公开(公告)号：US20190153597A1

公开(公告)日：2019-05-23

申请号：US16193297

申请日：2018-11-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kohichi SATOH ,  Hideaki YAMASAKI ,  Motoko NAKAGOMI ,  Junya OKA

IPC: C23C16/458 ,  H01L21/687 ,  H01J37/32

Abstract: There is provided a substrate mounting table for use in a plasma-based processing apparatus that performs a plasma-based process on a substrate inside a processing container, which includes a substrate mounting portion having a front surface subjected to a mirroring treatment and on which the substrate is mounted, and an edge portion located around the substrate mounting portion and treated to have an uneven shape.

公开(公告)号：US20190385843A1

公开(公告)日：2019-12-19

申请号：US16441781

申请日：2019-06-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoshi WAKABAYASHI ,  Motoko NAKAGOMI ,  Hideaki YAMASAKI

IPC: H01L21/02 ,  H01J37/32

Abstract: There is provided a method of forming a metal film. The method includes forming a first metal film on a substrate accommodated in a processing container using a plasma CVD method by supplying a first gas including a metal precursor gas and a plasma excitation gas, and a second gas including a reducing gas and a plasma excitation gas into the processing container and after the forming the first metal film, forming a second metal film on the first metal film using a plasma CVD method by supplying a third gas including the metal precursor gas and the plasma excitation gas, and a fourth gas including the reducing gas and the plasma excitation gas into the processing container.

公开(公告)号：US20180102244A1

公开(公告)日：2018-04-12

申请号：US15722343

申请日：2017-10-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kohichi SATOH ,  Shinya OKABE ,  Nagayasu HIRAMATSU ,  Motoko NAKAGOMI ,  Yuji KOBAYASHI

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/06 ,  C23C16/45512 ,  C23C16/45536 ,  C23C16/45574 ,  C23C16/5096 ,  H01J37/26 ,  H01J37/32 ,  H01J2237/3321 ,  H01L21/02274

Abstract: A film forming method of forming a film containing a metal element on a substrate using a source gas containing the metal element and a reactant gas that reacts with the source gas, which includes: forming a lower layer film containing the metal element on a surface of the substrate through a plasma CVD process by supplying the source gas into a process container and plasmarizing the source gas; and subsequently, laminating an upper layer film containing the metal element on the lower layer film by a plasma ALD process which alternately performs an adsorption step of supplying the source gas into the process container to adsorb the source gas onto the surface of the substrate with the lower layer film formed thereon, and a reaction step of supplying the reactant gas into the process container and plasmarizing the reactant gas.

公开(公告)号：US20150187593A1

公开(公告)日：2015-07-02

申请号：US14579262

申请日：2014-12-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kensaku NARUSHIMA ,  Kohichi SATOH ,  Motoko NAKAGOMI ,  Eiichi KOMORI ,  Taiki KATOU

IPC: H01L21/306 ,  H01L21/67

CPC classification number: H01L21/30604 ,  H01L21/02063 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/6708 ,  H01L21/76814 ,  H01L21/76897

Abstract: There is a method of selectively etching a silicon oxide film among a silicon nitride film and the silicon oxide film formed on a surface of a substrate to be processed, the method including: under a vacuum atmosphere, intermittently supplying at least one of a first processing gas composed of a hydrogen fluoride gas and an ammonia gas and a second processing gas composed of a compound of nitrogen, hydrogen and fluorine, to the substrate to be processed multiple times.

Abstract translation: 在氮化硅膜和形成在被处理基板表面上的氧化硅膜之间有选择性地蚀刻氧化硅膜的方法，该方法包括：在真空气氛下，间歇地供给第一处理 将由氟化氢气体和氨气组成的气体和由氮，氢和氟化合物构成的第二处理气体加入到待加工的基板上。