公开(公告)号：US20180312972A1

公开(公告)日：2018-11-01

申请号：US15962463

申请日：2018-04-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koji MAEKAWA ,  Takashi SAMESHIMA ,  Shintaro AOYAMA ,  Mikio SUZUKI ,  Susumu ARIMA ,  Atsushi MATSUMOTO ,  Naoki SHIBATA

IPC: C23C16/455 ,  C23C16/02 ,  C23C16/08 ,  H01L21/285 ,  H01L21/768

Abstract: There is provided a tungsten film forming method which includes: forming a first tungsten film on a substrate; and forming a second tungsten film on the first tungsten film. The forming a first tungsten film includes alternately supplying a first raw material gas containing tungsten and a diborane gas together with a first carrier gas to the substrate. The forming a second tungsten film includes alternately supplying a second raw material gas containing tungsten and a hydrogen gas together with a second carrier gas to the substrate on which the first tungsten film is formed. The first carrier gas is a nitrogen gas. The second carrier gas includes at least one kind of inert gas and has a noble gas at a flow rate of 70% or more with respect to a total flow rate of the second carrier gas.

公开(公告)号：US20160348234A1

公开(公告)日：2016-12-01

申请号：US15161674

申请日：2016-05-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenji SUZUKI ,  Takanobu HOTTA ,  Koji MAEKAWA ,  Yasushi AIBA

IPC: C23C16/06 ,  C23C16/455

CPC classification number: C23C16/045 ,  C23C16/14 ,  C23C16/45527 ,  H01L27/11582

Abstract: There is provided a method for forming a metal film on a target substrate having a complex-shaped portion and a flat portion, the target substrate being loaded into a chamber which is maintained under a depressurized atmosphere, by sequentially supplying a metal chloride gas as a raw material gas and a reduction gas for reducing a metal chloride into the chamber while purging the chamber in the course of sequentially supplying the metal chloride gas and the reduction gas, the method including: forming a first metal film by supplying the metal chloride gas at a relatively low flow rate; and forming a second metal film by supply the metal chloride gas at a relatively high flow rate.

Abstract translation: 提供了在具有复杂形状部分和平坦部分的目标基板上形成金属膜的方法，将目标基板装载到保持在减压气氛下的室中，通过依次供应金属氯化物气体作为 原料气体和用于在顺序地供给金属氯化物气体和还原气体的过程中清洗室的同时将金属氯化物还原为室的还原气体，所述方法包括：通过将金属氯化物气体供给到第一金属膜 流量相对较低; 以及通过以相对高的流量供给金属氯化物气体而形成第二金属膜。

公开(公告)号：US20150279735A1

公开(公告)日：2015-10-01

申请号：US14664945

申请日：2015-03-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takanobu HOTTA ,  Yasushi AIBA ,  Koji MAEKAWA

IPC: H01L21/768 ,  H01L21/3205 ,  C23C16/08 ,  C23C16/455 ,  C23C16/46

CPC classification number: H01L21/76879 ,  C23C16/08 ,  C23C16/14 ,  C23C16/455 ,  C23C16/45525 ,  C23C16/46 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/76877

Abstract: A tungsten film forming method includes: supplying a tungsten chloride gas as a source material of tungsten and a reducing gas towards a substrate to be processed under a depressurized atmosphere to cause reaction between the tungsten chloride gas and the reducing gas while heating the substrate to be processed, such that a main tungsten film is directly formed on a surface of the substrate to be processed without forming an initial tungsten film for nucleus generation.

Abstract translation: 一种钨膜形成方法包括：在减压气氛下将氯化钨气体作为钨和还原气体的源材料供给待加工的基板，以在将基板加热的同时使氯化钨气体和还原气体发生反应， 使得在待加工的基板的表面上直接形成主钨膜而不形成用于产生核的初始钨膜。

公开(公告)号：US20210115560A1

公开(公告)日：2021-04-22

申请号：US17255990

申请日：2019-05-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Katsumasa YAMAGUCHI ,  Koji MAEKAWA ,  Takashi SAMESHIMA ,  Shigeru NAKAJIMA

IPC: C23C16/455 ,  C23C16/14 ,  C23C16/40 ,  C23C16/34 ,  H01L21/768

Abstract: A film forming method includes a step of disposing a substrate on which an insulating film is formed in a processing container and forming a base film by repeatedly supplying a Ti-containing gas, an Al-containing gas, and a reaction gas into the processing container under a decompressed atmosphere; and a step of forming a metal layer made of a metal material on the substrate on which the base film is formed.

公开(公告)号：US20170283942A1

公开(公告)日：2017-10-05

申请号：US15473993

申请日：2017-03-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenji SUZUKI ,  Takanobu HOTTA ,  Tomohisa MARUYAMA ,  Masayuki NASU ,  Junya MIYAHARA ,  Koji MAEKAWA

IPC: C23C16/08 ,  C23C16/52 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768

CPC classification number: C23C16/08 ,  C23C16/14 ,  C23C16/45534 ,  C23C16/45553 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/32051 ,  H01L21/76861 ,  H01L21/76877

Abstract: There is provided a tungsten film forming method for forming a tungsten film on a target substrate disposed inside a chamber kept under a depressurized atmosphere and having a base film formed on a surface thereof, using a tungsten chloride gas as a tungsten raw material gas and a reducing gas for reducing the tungsten chloride gas, which includes: performing an SiH4 gas treatment with respect to the target substrate having the base film formed thereon by supplying an SiH4 gas into the chamber; and subsequently, forming the tungsten film by sequentially supplying the tungsten chloride gas and the reducing gas into the chamber while purging an interior of the chamber in the course of sequentially supplying the tungsten chloride gas and the reducing gas.

公开(公告)号：US20160281231A1

公开(公告)日：2016-09-29

申请号：US15079435

申请日：2016-03-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masayuki MOROI ,  Koji MAEKAWA

IPC: C23C16/455 ,  C23C16/52

CPC classification number: C23C16/45525 ,  C23C16/14 ,  C23C16/4481 ,  C23C16/45561 ,  C23C16/52

Abstract: A source supply apparatus configured to supply a source material sublimated from a solid source material together with a carrier gas to a source consumption zone, includes a source material supplier defining a sealed space and resolidifying and precipitating the source material in a thin film form of, a carrier gas supply passage through which the carrier gas is supplied to the source material supplier, a temperature adjustment part configured to adjust temperature of the source material supplier, a supply passage through which the source material and the carrier gas are supplied from the source material supplier to the source consumption zone, a flow rate measurement part measuring a flow rate of the source material supplied from the source material supplier to the source consumption zone, and a controller configured to control the temperature adjustment part based on a measured flow rate obtained from the flow rate measurement part.

Abstract translation: 一种源供给装置，被配置为将从固体源材料升华的源材料与载气一起提供给源消耗区，源源材料供应源限定密封空间，并且以源于其的薄膜形式重新凝固和沉淀源材料， 将载气供给源材料供给体的载气供给通路，配置为调节源材料供给体的温度的温度调节部，从源材料供给源材料和载气的供给通路 供给源消耗区域，流量测量部件，测量从源材料供应商提供给源消耗区域的源材料的流量;以及控制器，被配置为基于从源材料供应商获得的测量流量来控制温度调节部件， 流量测量部分。