公开(公告)号：US20160379879A1

公开(公告)日：2016-12-29

申请号：US15039803

申请日：2014-11-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takanobu HOTTA ,  Yasushi AIBA

IPC: H01L21/768 ,  C23C16/455 ,  H01L21/285 ,  C23C16/14

CPC classification number: H01L21/76879 ,  C23C16/14 ,  C23C16/45527 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76877

Abstract: In a method for forming a tungsten film, a substrate to be processed is disposed in a processing chamber having a reduced pressure atmosphere. Then a reducing gas and a tungsten chloride gas as a tungsten source are supplied to the processing chamber simultaneously or alternately with a process of purging an inside of the processing chamber interposed therebetween. The substrate is heated and the tungsten chloride gas and the reducing gas react with each other on the heated substrate to form a tungsten film.

Abstract translation: 在形成钨膜的方法中，将待处理的基板设置在具有减压气氛的处理室中。 然后，将还原气体和作为钨源的氯化钨气体同时或交替地供给到处理室中，其中，处理室内部的吹扫处理。 加热衬底，氯化钨气体和还原气体在被加热衬底上相互反应形成钨膜。

公开(公告)号：US20160351402A1

公开(公告)日：2016-12-01

申请号：US15165524

申请日：2016-05-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenji SUZUKI ,  Takanobu HOTTA ,  Koji MAEKAWA ,  Yasushi AIBA

IPC: H01L21/285 ,  C23C16/455 ,  H01L21/3213 ,  C23C16/02

CPC classification number: H01L21/28556 ,  C23C16/0281 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/321 ,  H01L21/76868 ,  H01L21/76876 ,  H01L21/76877

Abstract: There is provided a method of reducing stress in a metal film that is highly stressed, the method including: processing the metal film by supplying a metal chloride gas containing a metal of the metal film and a reduction gas for reducing the metal chloride gas onto the metal film; and forming a process film on the metal film to reduce stress in the metal film.

Abstract translation: 提供了一种降低金属膜的应力高应力的方法，该方法包括：通过将含有金属膜的金属的金属氯化物气体和用于将金属氯化物气体还原的还原气体供给到金属膜上， 金属膜; 并在金属膜上形成工艺膜以减少金属膜中的应力。

公开(公告)号：US20160233099A1

公开(公告)日：2016-08-11

申请号：US15011339

申请日：2016-01-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kensaku NARUSHIMA ,  Takanobu HOTTA ,  Tomohisa MARUYAMA ,  Yasushi AIBA

IPC: H01L21/285

CPC classification number: H01L21/28556 ,  C23C16/14 ,  C23C16/45527 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76877

Abstract: A tungsten film forming method for forming a tungsten film on a surface of a target substrate by an ALD (atomic layer deposition) method comprises adding a reduction gas to allow an ALD reaction to mainly occur when a tungsten chloride gas is supplied. In the ALD method, the tungsten chloride gas as a tungsten source gas and the reduction gas for reducing the tungsten chloride gas are alternately supplied into a chamber which accommodates the target substrate and is maintained under a depressurized atmosphere, with a purge process for purging an inside of the chamber performed between the supply of the tungsten chloride gas and the supply of the reduction gas.

Abstract translation: 通过ALD（原子层沉积）方法在目标基板的表面上形成钨膜的钨膜形成方法包括在供给氯化钨气体时添加还原气体以使ALD反应主要发生。 在ALD方法中，将作为钨源气体的氯化钨气体和用于还原氯化钨气体的还原气体交替地供给到容纳目标基板的室中，并且保持在减压气氛下，同时进行清洗 在氯化钨气体的供给和还原气体的供给之间进行室内。

公开(公告)号：US20160040287A1

公开(公告)日：2016-02-11

申请号：US14819867

申请日：2015-08-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasushi AKASAKA ,  Takanobu HOTTA ,  Yasushi AIBA

IPC: C23C16/455 ,  C23C16/06

CPC classification number: C23C16/14 ,  C23C16/4488 ,  C23C16/45534

Abstract: A tungsten film forming method includes forming a tungsten film on a surface of a substrate to be processed by sequentially supplying a WCl6 gas as a tungsten source gas, a reducing gas composed of a reducible gas including hydrogen and a purge gas into a chamber which accommodates the substrate and which remains in a depressurized atmosphere. A Cl2 gas is simultaneously supplied when supplying the WCl6 gas.

Abstract translation: 钨成膜方法包括：在作为钨源气体的WCl 6气体的顺序供给的还原性气体中含有氢和净化气体的还原性气体，形成在被处理基板的表面上的钨膜， 底物并保持在减压气氛中。 当提供WCl6气体时，同时供应Cl2气体。

公开(公告)号：US20150275367A1

公开(公告)日：2015-10-01

申请号：US14669795

申请日：2015-03-26

Applicant: Tokyo Electron Limited

Inventor： Masayuki MOROI ,  Hajime YAMANAKA ,  Yasushi AIBA ,  Takanobu HOTTA

IPC: C23C16/455 ,  C23C16/52 ,  C23C16/448

CPC classification number: C23C16/45557 ,  C23C16/08 ,  C23C16/4481 ,  C23C16/45544 ,  C23C16/52

Abstract: A gas supply mechanism of supplying a raw material gas obtained from a raw material of a solid state or a liquid state into a chamber configured to perform a film forming process on a workpiece is disclosed. The gas supply mechanism includes a gas supply controller configured to control a flow rate of a carrier gas by means of a flow rate controller, and to enable the carrier gas to flow while closing a material gas supply/shut-off valve to thereby increase internal pressures of a raw material container and a raw material gas supply pipe to be a high-pressure condition and then control the raw material gas supply/shut-off valve to be opened.

Abstract translation: 公开了一种将从固态或液态原料获得的原料气体供给到构造成对工件进行成膜处理的室的气体供给机构。 气体供给机构包括：气体供给控制器，被配置为通过流量控制器控制载气的流量，并且能够在关闭材料气体供应/截止阀的同时使载气流动，从而增加内部 原料容器和原料气体供给管的压力为高压状态，然后控制待开放的原料气体供给/截止阀。

公开(公告)号：US20160348234A1

公开(公告)日：2016-12-01

申请号：US15161674

申请日：2016-05-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenji SUZUKI ,  Takanobu HOTTA ,  Koji MAEKAWA ,  Yasushi AIBA

IPC: C23C16/06 ,  C23C16/455

CPC classification number: C23C16/045 ,  C23C16/14 ,  C23C16/45527 ,  H01L27/11582

Abstract: There is provided a method for forming a metal film on a target substrate having a complex-shaped portion and a flat portion, the target substrate being loaded into a chamber which is maintained under a depressurized atmosphere, by sequentially supplying a metal chloride gas as a raw material gas and a reduction gas for reducing a metal chloride into the chamber while purging the chamber in the course of sequentially supplying the metal chloride gas and the reduction gas, the method including: forming a first metal film by supplying the metal chloride gas at a relatively low flow rate; and forming a second metal film by supply the metal chloride gas at a relatively high flow rate.

Abstract translation: 提供了在具有复杂形状部分和平坦部分的目标基板上形成金属膜的方法，将目标基板装载到保持在减压气氛下的室中，通过依次供应金属氯化物气体作为 原料气体和用于在顺序地供给金属氯化物气体和还原气体的过程中清洗室的同时将金属氯化物还原为室的还原气体，所述方法包括：通过将金属氯化物气体供给到第一金属膜 流量相对较低; 以及通过以相对高的流量供给金属氯化物气体而形成第二金属膜。

公开(公告)号：US20150279736A1

公开(公告)日：2015-10-01

申请号：US14668564

申请日：2015-03-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takanobu HOTTA ,  Yasushi AIBA

IPC: H01L21/768 ,  H01L23/532

CPC classification number: H01L21/76883 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/32135 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/53257 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a tungsten film forming method, a substrate having a recess is provided in a processing chamber, and a first tungsten film is formed on the substrate to fill the recess with a tungsten by simultaneously or alternately supplying WCl6 gas as a tungsten source and a reducing gas under a depressurized atmosphere of the processing chamber, and by reacting the WCl6 gas with the reducing gas while heating the substrate. Then, an opening is formed in the tungsten filled in the recess by supplying WCl6 gas into the processing chamber and etching an upper portion of the tungsten. Thereafter, a second tungsten film is formed on the substrate having the opening by simultaneously or alternately supplying the WCl6 gas and the reducing gas into the processing chamber, and by reacting the WCl6 gas with the reducing gas while heating the substrate.

Abstract translation: 在钨膜形成方法中，在处理室中设置有具有凹部的基板，并且在基板上形成第一钨膜，以通过同时或交替地供给WCl 6气体作为钨源并且还原 在处理室的减压气氛下，通过使WCl 6气体与还原气体反应同时加热基板。 然后，通过向处理室中供给WCl 6气体并蚀刻钨的上部，在填充在凹部中的钨形成开口。 此后，通过同时或交替地将WCl 6气体和还原气体供给到处理室中，并且通过在加热基板的同时使WCl 6气体与还原气体反应，在具有开口的基板上形成第二钨膜。

公开(公告)号：US20150279735A1

公开(公告)日：2015-10-01

申请号：US14664945

申请日：2015-03-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takanobu HOTTA ,  Yasushi AIBA ,  Koji MAEKAWA

IPC: H01L21/768 ,  H01L21/3205 ,  C23C16/08 ,  C23C16/455 ,  C23C16/46

CPC classification number: H01L21/76879 ,  C23C16/08 ,  C23C16/14 ,  C23C16/455 ,  C23C16/45525 ,  C23C16/46 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/76877

Abstract: A tungsten film forming method includes: supplying a tungsten chloride gas as a source material of tungsten and a reducing gas towards a substrate to be processed under a depressurized atmosphere to cause reaction between the tungsten chloride gas and the reducing gas while heating the substrate to be processed, such that a main tungsten film is directly formed on a surface of the substrate to be processed without forming an initial tungsten film for nucleus generation.

Abstract translation: 一种钨膜形成方法包括：在减压气氛下将氯化钨气体作为钨和还原气体的源材料供给待加工的基板，以在将基板加热的同时使氯化钨气体和还原气体发生反应， 使得在待加工的基板的表面上直接形成主钨膜而不形成用于产生核的初始钨膜。