公开(公告)号：US10141164B2

公开(公告)日：2018-11-27

申请号：US14494822

申请日：2014-09-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasuharu Sasaki ,  Akihito Fushimi ,  Manabu Iwata

IPC: C23C16/505 ,  H01J37/32 ,  C23C16/458 ,  C23C16/46

Abstract: A plasma processing apparatus and a plasma processing method are provided which can sufficiently suppress an abnormal discharge in a gas space. A plasma processing apparatus includes a high frequency power source connected between a processing chamber and a base stand; a gas storage unit provided within the base stand and configured to store a gas; a blocking mechanism configured to block a gas introducing port of the gas storage unit; and a connection unit configured to connect a space between a disposition position of a wafer and the base stand, to the gas storage unit.

公开(公告)号：US20150069910A1

公开(公告)日：2015-03-12

申请号：US14475905

申请日：2014-09-03

Applicant: Tokyo Electron Limited

Inventor： Manabu Iwata ,  Yasuharu Sasaki

IPC: H01J37/32 ,  H01J37/02 ,  H01J37/24

CPC classification number: H01J37/026 ,  H01J37/32091 ,  H01J37/32697

Abstract: A plasma processing apparatus includes a processing chamber; a conductive base within the processing chamber; an electrostatic chuck, having an electrode, provided on the base; a high frequency power supply that applies a high frequency power to the base; a first DC power supply that applies a DC voltage to the electrostatic chuck; and a plasma generation unit that generates plasma of a processing gas within the processing chamber. A plasma processing method performed in the plasma processing apparatus includes connecting the first DC power supply to the electrode of the electrostatic chuck; cutting off connection between the first DC power supply and the electrode of the electrostatic chuck; and generating the plasma within the processing chamber by applying the high frequency power to the base in a state that the connection between the first DC power supply and the electrode of the electrostatic chuck is cut off.

Abstract translation: 等离子体处理装置包括处理室; 处理室内的导电基底; 具有设置在基座上的电极的静电卡盘; 将高频电源施加到基座的高频电源; 向所述静电卡盘施加直流电压的第一直流电源; 以及等离子体产生单元，其产生处理室内的处理气体的等离子体。 在等离子体处理装置中执行的等离子体处理方法包括将第一DC电源连接到静电卡盘的电极; 切断第一直流电源与静电卡盘的电极之间的连接; 以及在所述第一DC电源和所述静电卡盘的电极之间的连接被切断的状态下，通过向所述基座施加所述高频电力，在所述处理室内产生所述等离子体。

公开(公告)号：US20140326409A1

公开(公告)日：2014-11-06

申请号：US14331690

申请日：2014-07-15

Applicant: Tokyo Electron Limited

Inventor： Akira KOSHIISHI ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32091 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32348 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32706 ,  H01J37/32834 ,  H01J2237/3344 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67069

Abstract: An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.

Abstract translation: 一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。 被配置为施加具有相对较高频率的第一RF功率的第一RF电源连接到上电极。 配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。 可变直流电源连接到上电极。 将处理气体供给到处理室中，同时控制从可变直流电源到上部电极的施加电压，施加电流和施加电力中的任何一个，以产生处理气体的等离子体，以进行等离子体蚀刻。