公开(公告)号：US20230326762A1

公开(公告)日：2023-10-12

申请号：US18188758

申请日：2023-03-23

Applicant: Tokyo Electron Limited

Inventor： Masami OIKAWA ,  Yuya TAKAMURA

IPC: H01L21/3115 ,  C23C16/56 ,  C23C16/40

CPC classification number: H01L21/31155 ,  C23C16/56 ,  C23C16/401

Abstract: A substrate processing method includes: preparing a substrate having a target film on a surface; forming a barrier film that covers the target film; supplying a deuterium gas and an oxygen gas to the target film covered with the barrier film, thereby implanting deuterium into the target film; and removing the barrier film after the deuterium is implanted into the target film.

公开(公告)号：US20220364228A1

公开(公告)日：2022-11-17

申请号：US17753004

申请日：2020-08-06

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro TAKEZAWA ,  Daisuke SUZUKI ,  Hiroyuki HAYASHI ,  Tatsuya MIYAHARA ,  Keisuke FUJITA ,  Masami OIKAWA ,  Sena FUJITA

IPC: C23C16/44 ,  H01L21/02 ,  B08B5/00 ,  B08B9/08 ,  B08B13/00

Abstract: A cleaning method according to an aspect of the present disclosure includes: supplying a halogen-containing gas that does not contain fluorine to an interior of a processing container that is capable of being exhausted via an exhaust pipe to perform a cleaning; and supplying a fluorine-containing gas to at least one of the interior of the processing container and an interior of the exhaust pipe to perform the cleaning after the supplying the halogen-containing gas to perform the cleaning.

公开(公告)号：US20220223404A1

公开(公告)日：2022-07-14

申请号：US17644868

申请日：2021-12-17

Applicant: Tokyo Electron Limited

Inventor： Masami OIKAWA

IPC: H01L21/02 ,  C23C16/44 ,  B08B7/00

Abstract: A cleaning method for removing a silicon-containing film deposited in a temperature-adjustable process container by a heater and a cooler includes: stabilizing a temperature in the process container to a cleaning temperature; and removing the silicon-containing film by supplying a cleaning gas into the process container stabilized at the cleaning temperature; wherein in the removing the silicon-containing film, a heating capability of the heater and a cooling capability of the cooler are controlled based on the temperature in the process container.

公开(公告)号：US20210115562A1

公开(公告)日：2021-04-22

申请号：US17065355

申请日：2020-10-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masami OIKAWA

IPC: C23C16/52 ,  C23C16/455 ,  C23C16/40 ,  C23C16/458

Abstract: A film forming apparatus includes: a pressure-reducible processing container; a pressure gauge configured to detect a pressure in the processing container; and a controller, wherein the controller is configured to repeat a cycle including a step of adjusting a zero point of the pressure gauge and a step of executing a film forming process in the processing container until an ultimate pressure, which is detected by the pressure gauge when an interior of the processing container is evacuated to a highest reachable vacuum degree after the step of executing the film forming process, reaches a target range.

公开(公告)号：US20170233866A1

公开(公告)日：2017-08-17

申请号：US15429857

申请日：2017-02-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masami OIKAWA

IPC: C23C16/44 ,  C23C16/52 ,  C23C16/455 ,  H01L21/02

CPC classification number: C23C16/4412 ,  C23C16/4408 ,  C23C16/52 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262

Abstract: A film forming apparatus includes: a processing chamber receiving a substrate and performing a film forming process for forming a predetermined film; a gas supply means supplying inert gas; an exhaust means exhausting an inside of the processing chamber to adjust a pressure in the processing chamber; an impurity concentration detecting means detecting impurity concentration in the processing chamber; and a controller performing a purge process which includes supplying the inert gas into the processing chamber without exhausting the inside of the processing chamber and exhausting the inside of the processing chamber without supplying the inert gas into the processing chamber when the impurity concentration detected by the impurity concentration detecting means is equal to or more than a predetermined value, and perform the film forming process with respect to the substrate when the impurity concentration detected by the impurity concentration detecting means is less than the predetermined value.