公开(公告)号：US20200312677A1

公开(公告)日：2020-10-01

申请号：US16821133

申请日：2020-03-17

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro TAKEZAWA ,  Keita KUMAGAI ,  Keisuke FUJITA ,  Hiroyuki HAYASHI ,  Daisuke Suzuki ,  Rui KANEMURA ,  Sena FUJITA

IPC: H01L21/67 ,  H01L21/04 ,  H01L21/768

Abstract: A substrate processing apparatus includes a processing container configured to accommodate a plurality of substrates therein, a gas supply configured to supply a first raw material gas of a compound containing Si or Ge and H and a second raw material gas of a compound containing Si or Ge and a halogen element into the processing container; and an exhauster configured to evacuate an inside of the processing container, wherein the gas supply has a dispersion nozzle provided with a plurality of gas holes for discharging the first raw material gas and the second raw material gas, and the substrate processing apparatus further comprises a heater configured to heat the first raw material gas and the second raw material gas in the dispersion nozzle.

公开(公告)号：US20200168455A1

公开(公告)日：2020-05-28

申请号：US16693748

申请日：2019-11-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Rui KANEMURA ,  Keita KUMAGAI ,  Keisuke FUJITA

IPC: H01L21/02 ,  C23C16/56 ,  H01L21/66

Abstract: According to one embodiment of the present disclosure, a method for forming a crystallized semiconductor film having a specific grain size on a substrate includes: forming a seed layer on the substrate accommodated in a processing container; vacuuming an interior of the processing container to a medium vacuum or less in a state in which the substrate, on which the seed layer is formed, is accommodated in the processing container; forming an amorphous semiconductor film on the seed layer after vacuuming the interior of the processing container; and crystallizing the amorphous semiconductor film by heat processing.

公开(公告)号：US20190228992A1

公开(公告)日：2019-07-25

申请号：US16251958

申请日：2019-01-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masami OIKAWA ,  Keisuke FUJITA

IPC: H01L21/67 ,  H01L21/673 ,  H01L21/3065

Abstract: There is provided a substrate processing method comprising etching a silicon film formed on a surface of a substrate accommodated in a processing container by supplying an etching gas to the substrate, purging the processing container by supplying a hydrogen-containing gas that reacts with the etching gas as a purge gas into the processing container, and forming an additional silicon film on the substrate.

公开(公告)号：US20220364228A1

公开(公告)日：2022-11-17

申请号：US17753004

申请日：2020-08-06

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro TAKEZAWA ,  Daisuke SUZUKI ,  Hiroyuki HAYASHI ,  Tatsuya MIYAHARA ,  Keisuke FUJITA ,  Masami OIKAWA ,  Sena FUJITA

IPC: C23C16/44 ,  H01L21/02 ,  B08B5/00 ,  B08B9/08 ,  B08B13/00

Abstract: A cleaning method according to an aspect of the present disclosure includes: supplying a halogen-containing gas that does not contain fluorine to an interior of a processing container that is capable of being exhausted via an exhaust pipe to perform a cleaning; and supplying a fluorine-containing gas to at least one of the interior of the processing container and an interior of the exhaust pipe to perform the cleaning after the supplying the halogen-containing gas to perform the cleaning.

公开(公告)号：US20180179625A1

公开(公告)日：2018-06-28

申请号：US15852668

申请日：2017-12-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoshi TAKAGI ,  Katsuhiko KOMORI ,  Mitsuhiro OKADA ,  Masahisa WATANABE ,  Kazuya TAKAHASHI ,  Kazuki YANO ,  Keisuke FUJITA

IPC: C23C16/24 ,  H01L21/22 ,  H01L21/205 ,  H01L21/3205 ,  H01L21/285 ,  C23C16/455

CPC classification number: C23C16/24 ,  C23C16/45544 ,  C23C16/45546 ,  C23C16/46 ,  H01L21/205 ,  H01L21/22 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/67017 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/67303

Abstract: There is provided a film forming apparatus for performing a film forming process on substrates by heating the substrates while the substrates are held in a shelf shape by a substrate holder in a vertical reaction container. The film forming apparatus includes: an exhaust part configured to evacuate the reaction container; a gas supply part configured to supply a film forming gas into the reaction container; a heat insulating member provided above or below an arrangement region of the substrates to overlap with the arrangement region and configured to thermally insulate the arrangement region from an upper region above the arrangement region or a lower region below the arrangement region; and a through-hole provided in the heat insulating member at a position overlapping with central portions of the substrates to adjust a temperature distribution in a plane of each substrate held near the heat insulating member.

公开(公告)号：US20210090887A1

公开(公告)日：2021-03-25

申请号：US17111867

申请日：2020-12-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Mitsuhiro OKADA ,  Tatsuya MIYAHARA ,  Keisuke FUJITA

IPC: H01L21/02 ,  C23C14/58 ,  H01L21/3065 ,  C23C14/14 ,  C23C14/54

Abstract: There is provided a method of forming a silicon film, which includes: a film forming step of forming the silicon film on a base, the silicon film having a film thickness thicker than a desired film thickness; and an etching step of reducing the film thickness of the silicon film by supplying an etching gas containing bromine or iodine to the silicon film.

公开(公告)号：US20200312661A1

公开(公告)日：2020-10-01

申请号：US16830835

申请日：2020-03-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki HAYASHI ,  Sena FUJITA ,  Keita KUMAGAI ,  Keisuke FUJITA

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/46 ,  C23C16/455

Abstract: There is provided a film forming method including: supplying a halogen-free silicon raw material gas and a halogen-containing silicon raw material gas into a processing container while lowering a temperature of a substrate accommodated in the processing container from a first temperature to a second temperature in a temperature lowering process; and supplying the halogen-free silicon raw material gas and the halogen-containing silicon raw material gas into the processing container while maintaining the temperature of the substrate at a third temperature in a temperature stabilizing process, that occurs after the temperature lowering process.

公开(公告)号：US20200308696A1

公开(公告)日：2020-10-01

申请号：US16837109

申请日：2020-04-01

Applicant: Tokyo Electron Limited

Inventor： Rui KANEMURA ,  Yoshihiro TAKEZAWA ,  Keita KUMAGAI ,  Keisuke FUJITA

IPC: C23C16/24 ,  C23C16/44 ,  C23C16/52 ,  H01L21/02 ,  C23C16/46

Abstract: There is provided a film forming method including: supplying a halogen-free silicon raw material gas into a processing container that accommodates a substrate therein in a halogen-free silicon raw material gas supply process; supplying a halogen-containing silicon raw material gas into the processing container in a halogen-containing silicon raw material gas supply process; removing the halogen-containing silicon raw material gas inside the processing container in a halogen-containing silicon raw material gas removal process; and repeating a cycle including a sequence of the halogen-free silicon raw material gas supply process, the halogen-containing silicon raw material gas supply process, and the halogen-containing silicon raw material gas removal process in a continuous manner.

公开(公告)号：US20190309420A1

公开(公告)日：2019-10-10

申请号：US16371818

申请日：2019-04-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masami OIKAWA ,  Ken ITABASHI ,  Satoshi TAKAGI ,  Masahisa WATANABE ,  Keisuke FUJITA ,  Tatsuya MIYAHARA ,  Hiroyuki HAYASHI

IPC: C23C16/455 ,  H01L21/673 ,  H01L21/02 ,  H01L21/311 ,  C23C16/52

Abstract: There is provided a substrate processing apparatus including: a processing container accommodating a boat on which a substrate is mounted; and an injector that extends in a vertical direction along an inner wall of the processing container in a vicinity of the processing container and has a plurality of gas holes in a longitudinal direction, wherein the plurality of gas holes is oriented toward the inner wall in the vicinity of the processing container.