公开(公告)号：US20190284687A1

公开(公告)日：2019-09-19

申请号：US16353213

申请日：2019-03-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tatsuya MIYAHARA ,  Masahisa WATANABE ,  Sena FUJITA

IPC: C23C16/44 ,  H01L21/02 ,  C23C16/40 ,  C23C16/34

Abstract: In a method of cleaning a film-forming apparatus, having a processing container configured to accommodate a substrate therein and to perform film-forming processing in a state in which a pressure-reduced atmosphere is formed therein and a pressure gauge configured to monitor a pressure in the processing container, the method includes supplying a cleaning gas for removing a film formed by the film-forming processing to an inside of the processing container in which the film-forming processing has been performed and to the pressure gauge.

公开(公告)号：US20230141501A1

公开(公告)日：2023-05-11

申请号：US18051061

申请日：2022-10-31

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro TAKEZAWA ,  Tatsuya MIYAHARA

IPC: C30B25/02 ,  C30B29/06

CPC classification number: C30B25/02 ,  C30B29/06

Abstract: A method for forming a polycrystalline silicon film includes forming a first amorphous silicon film having an island shape on a substrate. The method includes forming a second amorphous silicon film, the second amorphous silicon film covering the first amorphous silicon film. The method includes forming a third amorphous silicon film on the second amorphous silicon film. The method includes heating the substrate to a first temperature at which the first amorphous silicon film crystallizes more easily than the second amorphous silicon film. The first amorphous silicon film crystallizes at a temperature lower than that of the second amorphous silicon film.

公开(公告)号：US20220319846A1

公开(公告)日：2022-10-06

申请号：US17655247

申请日：2022-03-17

Applicant: Tokyo Electron Limited

Inventor： Tatsuya MIYAHARA ,  Daisuke SUZUKI ,  Yoshihiro TAKEZAWA ,  Yuki TANABE

IPC: H01L21/02 ,  C23C16/24 ,  C23C16/56 ,  C23C16/52

Abstract: A method of crystallizing an amorphous silicon film includes depositing the amorphous silicon film on a seed layer formed over a substrate while heating the amorphous silicon film at a first temperature, and forming a crystal nucleus in an outer layer of the amorphous silicon film by causing migration of silicon in the outer layer by heating the amorphous silicon film at a second temperature higher than the first temperature.

公开(公告)号：US20230151480A1

公开(公告)日：2023-05-18

申请号：US18051566

申请日：2022-11-01

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro TAKEZAWA ,  Tatsuya MIYAHARA ,  Daisuke SUZUKI

IPC: C23C16/24 ,  C30B25/10 ,  C30B25/20 ,  C30B29/06

CPC classification number: C23C16/24 ,  C30B25/10 ,  C30B25/20 ,  C30B29/06

Abstract: A film deposition method includes depositing an amorphous silicon film in a substrate under a process condition. The process condition includes supplying SiH4 gas into a processing chamber in which the substrate is placed. The process condition includes setting a temperature in the processing chamber to be in a range of greater than or equal to 300° C. and less than or equal to 440° C. The process condition includes setting a pressure of the processing chamber to be in a range of greater than or equal to 10 Torr and less than or equal to 100 Torr.

公开(公告)号：US20210090887A1

公开(公告)日：2021-03-25

申请号：US17111867

申请日：2020-12-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Mitsuhiro OKADA ,  Tatsuya MIYAHARA ,  Keisuke FUJITA

IPC: H01L21/02 ,  C23C14/58 ,  H01L21/3065 ,  C23C14/14 ,  C23C14/54

Abstract: There is provided a method of forming a silicon film, which includes: a film forming step of forming the silicon film on a base, the silicon film having a film thickness thicker than a desired film thickness; and an etching step of reducing the film thickness of the silicon film by supplying an etching gas containing bromine or iodine to the silicon film.

公开(公告)号：US20190309420A1

公开(公告)日：2019-10-10

申请号：US16371818

申请日：2019-04-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masami OIKAWA ,  Ken ITABASHI ,  Satoshi TAKAGI ,  Masahisa WATANABE ,  Keisuke FUJITA ,  Tatsuya MIYAHARA ,  Hiroyuki HAYASHI

IPC: C23C16/455 ,  H01L21/673 ,  H01L21/02 ,  H01L21/311 ,  C23C16/52

Abstract: There is provided a substrate processing apparatus including: a processing container accommodating a boat on which a substrate is mounted; and an injector that extends in a vertical direction along an inner wall of the processing container in a vicinity of the processing container and has a plurality of gas holes in a longitudinal direction, wherein the plurality of gas holes is oriented toward the inner wall in the vicinity of the processing container.

公开(公告)号：US20250079171A1

公开(公告)日：2025-03-06

申请号：US18816114

申请日：2024-08-27

Applicant: Tokyo Electron Limited

Inventor： Tatsuya MIYAHARA ,  Daisuke SUZUKI ,  Yoshihiro TAKEZAWA

IPC: H01L21/02 ,  C23C16/52 ,  C23C16/56

Abstract: A substrate-processing method includes: preparing a substrate including an undoped silicon film and a phosphorus-doped silicon film, at least the phosphorus-doped silicon film being exposed on a surface of the substrate; and supplying a halogen gas to the substrate, and, from among the undoped silicon film the phosphorus-doped silicon film, etching and removing the phosphorus-doped silicon film selectively.

公开(公告)号：US20220364228A1

公开(公告)日：2022-11-17

申请号：US17753004

申请日：2020-08-06

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro TAKEZAWA ,  Daisuke SUZUKI ,  Hiroyuki HAYASHI ,  Tatsuya MIYAHARA ,  Keisuke FUJITA ,  Masami OIKAWA ,  Sena FUJITA

IPC: C23C16/44 ,  H01L21/02 ,  B08B5/00 ,  B08B9/08 ,  B08B13/00

Abstract: A cleaning method according to an aspect of the present disclosure includes: supplying a halogen-containing gas that does not contain fluorine to an interior of a processing container that is capable of being exhausted via an exhaust pipe to perform a cleaning; and supplying a fluorine-containing gas to at least one of the interior of the processing container and an interior of the exhaust pipe to perform the cleaning after the supplying the halogen-containing gas to perform the cleaning.

公开(公告)号：US20220270940A1

公开(公告)日：2022-08-25

申请号：US17675225

申请日：2022-02-18

Applicant: Tokyo Electron Limited

Inventor： Shingo HISHIYA ,  Nobutoshi TERASAWA ,  Fumiaki NAGAI ,  Kazuaki SASAKI ,  Hiroaki KIKUCHI ,  Masayuki KITAMURA ,  Kazuo YABE ,  Motoshi FUKUDOME ,  Tatsuya MIYAHARA ,  Eiji KIKAMA ,  Yuki TANABE ,  Tomoyuki NAGATA

IPC: H01L21/66 ,  C23C16/52 ,  C23C16/455 ,  H01L21/02

Abstract: An abnormality detection method includes: supplying a gas controlled to a selected rate to a gas supply pipe via the gas pipe connected to the gas supply pipe, thereby introducing the gas into a reaction region of a processing container provided in a processing apparatus from a gas hole of the gas supply pipe; measuring a pressure inside the gas pipe by a pressure gauge attached to the gas pipe; and detecting an abnormality of at least one of the gas supply pipe and the gas pipe based on the pressure measured at the measuring.

公开(公告)号：US20240128081A1

公开(公告)日：2024-04-18

申请号：US18481492

申请日：2023-10-05

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro TAKEZAWA ,  Toru KANAZAWA ,  Yosuke WATANABE ,  Tatsuya MIYAHARA ,  Yuki TANABE ,  Daisuke SUZUKI ,  Masahisa WATANABE ,  Keisuke SUZUKI ,  Tuhin Shuvra Basu

IPC: H01L21/02 ,  C23C16/24

CPC classification number: H01L21/02672 ,  C23C16/24 ,  H01L21/02532 ,  H01L21/02592

Abstract: A film forming method includes preparing a substrate having an amorphous silicon film on a surface thereof, diffusing nickel into the amorphous silicon film by supplying a nickel source gas to the amorphous silicon film, and forming a polycrystalline silicon film by heating the amorphous silicon film, and crystallizing the amorphous silicon film by metal-induced lateral crystallization using the nickel diffused in the amorphous silicon film as a nucleus.