公开(公告)号：US20200312661A1

公开(公告)日：2020-10-01

申请号：US16830835

申请日：2020-03-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki HAYASHI ,  Sena FUJITA ,  Keita KUMAGAI ,  Keisuke FUJITA

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/46 ,  C23C16/455

Abstract: There is provided a film forming method including: supplying a halogen-free silicon raw material gas and a halogen-containing silicon raw material gas into a processing container while lowering a temperature of a substrate accommodated in the processing container from a first temperature to a second temperature in a temperature lowering process; and supplying the halogen-free silicon raw material gas and the halogen-containing silicon raw material gas into the processing container while maintaining the temperature of the substrate at a third temperature in a temperature stabilizing process, that occurs after the temperature lowering process.

公开(公告)号：US20230243031A1

公开(公告)日：2023-08-03

申请号：US17923312

申请日：2021-04-27

Applicant: Tokyo Electron Limited

Inventor： Sena FUJITA ,  Tadashi MITSUNARI ,  Takamichi KIKUCHI

IPC: C23C16/08 ,  C23C16/505 ,  C23C16/458

CPC classification number: C23C16/08 ,  C23C16/505 ,  C23C16/4583

Abstract: A film forming method includes: supplying a liquid to a concave portion of a substrate whose surface includes the concave portion and a convex portion which are adjacent to each other; and selectively forming a film on a top surface of the convex portion of the surface of the substrate by supplying a processing gas, which chemically changes the liquid, to the surface of the substrate, and moving the liquid from the concave portion to the top surface of the convex portion by a reaction between the processing gas and the liquid.

公开(公告)号：US20220364228A1

公开(公告)日：2022-11-17

申请号：US17753004

申请日：2020-08-06

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro TAKEZAWA ,  Daisuke SUZUKI ,  Hiroyuki HAYASHI ,  Tatsuya MIYAHARA ,  Keisuke FUJITA ,  Masami OIKAWA ,  Sena FUJITA

IPC: C23C16/44 ,  H01L21/02 ,  B08B5/00 ,  B08B9/08 ,  B08B13/00

Abstract: A cleaning method according to an aspect of the present disclosure includes: supplying a halogen-containing gas that does not contain fluorine to an interior of a processing container that is capable of being exhausted via an exhaust pipe to perform a cleaning; and supplying a fluorine-containing gas to at least one of the interior of the processing container and an interior of the exhaust pipe to perform the cleaning after the supplying the halogen-containing gas to perform the cleaning.

公开(公告)号：US20200312677A1

公开(公告)日：2020-10-01

申请号：US16821133

申请日：2020-03-17

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro TAKEZAWA ,  Keita KUMAGAI ,  Keisuke FUJITA ,  Hiroyuki HAYASHI ,  Daisuke Suzuki ,  Rui KANEMURA ,  Sena FUJITA

IPC: H01L21/67 ,  H01L21/04 ,  H01L21/768

Abstract: A substrate processing apparatus includes a processing container configured to accommodate a plurality of substrates therein, a gas supply configured to supply a first raw material gas of a compound containing Si or Ge and H and a second raw material gas of a compound containing Si or Ge and a halogen element into the processing container; and an exhauster configured to evacuate an inside of the processing container, wherein the gas supply has a dispersion nozzle provided with a plurality of gas holes for discharging the first raw material gas and the second raw material gas, and the substrate processing apparatus further comprises a heater configured to heat the first raw material gas and the second raw material gas in the dispersion nozzle.

公开(公告)号：US20190284687A1

公开(公告)日：2019-09-19

申请号：US16353213

申请日：2019-03-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tatsuya MIYAHARA ,  Masahisa WATANABE ,  Sena FUJITA

IPC: C23C16/44 ,  H01L21/02 ,  C23C16/40 ,  C23C16/34

Abstract: In a method of cleaning a film-forming apparatus, having a processing container configured to accommodate a substrate therein and to perform film-forming processing in a state in which a pressure-reduced atmosphere is formed therein and a pressure gauge configured to monitor a pressure in the processing container, the method includes supplying a cleaning gas for removing a film formed by the film-forming processing to an inside of the processing container in which the film-forming processing has been performed and to the pressure gauge.

公开(公告)号：US20240263306A1

公开(公告)日：2024-08-08

申请号：US18565703

申请日：2022-05-25

Applicant: Tokyo Electron Limited

Inventor： Shuji AZUMO ,  Sena FUJITA ,  Tadashi MITSUNARI ,  Yumiko KAWANO ,  Shinichi IKE

IPC: C23C16/455 ,  C23C16/04 ,  C23C16/458 ,  C23C16/54 ,  C23C16/56

CPC classification number: C23C16/45527 ,  C23C16/045 ,  C23C16/45563 ,  C23C16/4583 ,  C23C16/54 ,  C23C16/56

Abstract: A film forming method includes: (A) preparing a substrate with a surface having a first region where a first film is exposed, and a second region where a second film formed by a material different from the first film is exposed; (B) forming a stepped portion in the surface such that the first region becomes higher than the second region; (C) supplying a liquid to the surface where the stepped portion is formed; and (D) supplying, to the surface, a processing gas that chemically changes the liquid, and moving the liquid from the second region to the first region by a reaction between the processing gas and the liquid to selectively form a film in the first region with respect to the second region.

公开(公告)号：US20240254617A1

公开(公告)日：2024-08-01

申请号：US18564314

申请日：2022-05-26

Applicant: Tokyo Electron Limited

Inventor： Sena FUJITA

IPC: C23C16/04 ,  C23C16/50 ,  C23C16/56 ,  H01J37/32 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3213

CPC classification number: C23C16/04 ,  C23C16/50 ,  C23C16/56 ,  H01J37/32449 ,  H01L21/306 ,  H01L21/311 ,  H01L21/32133 ,  H01J2237/338

Abstract: A film forming method includes (A) to (C) below. (A) A liquid to a surface of a substrate including a recess and a protrusion, which are adjacent to each other, is supplied on the surface. (B) A processing gas that chemically changes the liquid is supplied to the surface of the substrate to move the liquid from the recess to the protrusion by a reaction between the liquid and the processing gas and to form a film on the top surface of the protrusion, thereby expanding a step difference formed on the surface. (C) A portion of the film is etched.

公开(公告)号：US20230135342A1

公开(公告)日：2023-05-04

申请号：US18051097

申请日：2022-10-31

Applicant: Tokyo Electron Limited

Inventor： Sena FUJITA ,  Hiroki MURAKAMI

IPC: H01J37/32 ,  C23C16/505 ,  C23C16/52 ,  C23C16/455 ,  C23C16/40 ,  C23C16/08 ,  C23C16/34

Abstract: A film forming method includes: preparing a substrate having a surface on which a first film containing boron and a second film made of a material different from that of the first film are formed; supplying a raw material gas, which contains halogen and an element X other than halogen, to the surface of the substrate; and supplying a plasmarized reaction gas, which contains oxygen, to the surface of the substrate, wherein a third film as an oxide film of the element X is selectively formed on the second film with respect to the first film by alternately supplying the raw material gas and the plasmarized reaction gas.

公开(公告)号：US20200230666A1

公开(公告)日：2020-07-23

申请号：US16744637

申请日：2020-01-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoshihiro TAKEZAWA ,  Daisuke SUZUKI ,  Hiroyuki HAYASHI ,  Sena FUJITA ,  Tatsuya MIYAHARA ,  Jyunji ARIGA ,  Shinya KIKUCHI

IPC: B08B9/027 ,  B08B5/00 ,  H01L21/67

Abstract: There is provided a cleaning method of a substrate processing apparatus comprising cleaning an inside of an exhaust pipe through which a gas of an inside of a processing container is exhausted. The cleaning the inside of the exhaust pipe includes: removing a deposit on a downstream side of an opening/closing valve in the exhaust pipe by supplying a first exhaust pipe cleaning gas containing fluorine to the downstream side of the opening/closing valve in the exhaust pipe in a state in which the opening/closing valve provided in a middle of the exhaust pipe is closed; and removing a deposit on an upstream side of the opening/closing valve in the exhaust pipe by supplying a second exhaust pipe cleaning gas not containing fluorine as a gas constituent element to the inside of the processing container in a state in which the opening/closing valve is opened.