公开(公告)号：US20210111005A1

公开(公告)日：2021-04-15

申请号：US17066586

申请日：2020-10-09

Applicant: Tokyo Electron Limited

Inventor： Takayuki Ishii ,  Kazuya Nagaseki ,  Michishige Saito ,  Shota Kaneko

IPC: H01J37/32 ,  B23K26/354 ,  B33Y10/00 ,  B33Y70/00 ,  B33Y80/00

Abstract: A member to be used in a substrate processing apparatus is provided. The member is formed of aluminum containing silicon, and the silicon has a particle diameter of 1 μm or less.

公开(公告)号：US10201826B2

公开(公告)日：2019-02-12

申请号：US14729385

申请日：2015-06-03

Applicant: Tokyo Electron Limited

Inventor： Katsunori Ichino ,  Takayuki Ishii ,  Kouzou Kawahara ,  Daisuke Simokawa ,  Kazuyuki Tashiro

IPC: B05D3/12 ,  B05C5/02 ,  B05C11/10 ,  B05D1/00 ,  G03F7/16 ,  H01L21/67

Abstract: Disclosed is a liquid coating method. The method executes processes of: coating a coating liquid in a spiral form on a surface of a substrate by ejecting the coating liquid from the ejection nozzle while moving the ejection nozzle in a predetermined direction between the rotary axis and a peripheral edge of the substrate during rotation of the substrate; making a linear velocity at an ejection position of the coating liquid from the ejection nozzle substantially constant by reducing a number of rotations of the substrate as the ejection position is positioned closer to the peripheral edge of the substrate; and making an ejection flow rate of the coating liquid ejected from the ejection nozzle substantially constant by changing a gap between the ejection port of the ejection nozzle and the surface of the substrate based on a flow rate of the coating liquid before ejection from the ejection nozzle.

公开(公告)号：US09744551B2

公开(公告)日：2017-08-29

申请号：US13920219

申请日：2013-06-18

Applicant: Tokyo Electron Limited

Inventor： Takayuki Ishii ,  Takahiro Sakamoto ,  Takahiro Kitano ,  Shoichi Terada

IPC: B05B1/04 ,  B05C5/02 ,  B05B12/08 ,  H01L21/67

CPC classification number: B05C5/0258 ,  B05B1/044 ,  B05B12/081 ,  B05C5/0254 ,  H01L21/6715

Abstract: Disclosed is a coating apparatus capable of enhancing the film thickness uniformity. The coating apparatus includes a nozzle and a moving mechanism. The nozzle includes a storage chamber that stores a coating liquid and a slit-like flow path that is in communication with the storage chamber, and discharges the coating liquid through a discharge port formed at a front end of the flow path. The moving mechanism moves the nozzle and the substrate relatively to each other along a surface of the substrate. Also, in the flow path provided in the nozzle, flow resistance at the central portion in the longitudinal direction is larger than that at both end portions in the longitudinal direction.

公开(公告)号：US09324569B2

公开(公告)日：2016-04-26

申请号：US14316082

申请日：2014-06-26

Applicant: Tokyo Electron Limited

Inventor： Takayuki Ishii

IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/3065 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32139

Abstract: A groove shape can be improved. A plasma etching method includes plasma-processing a photoresist film that is formed on a mask film and has a preset pattern; exposing an organic film formed under the mask film by etching the mask film with the pattern of the plasma-processed photoresist film; and etching the organic film by plasma of a mixture gas containing O2 (oxygen), COS (carbonyl sulfate) and Cl2 (chlorine).

Abstract translation: 可以改善凹槽形状。 等离子体蚀刻方法包括等离子体处理形成在掩模膜上并具有预设图案的光致抗蚀剂膜; 通过用等离子体处理的光致抗蚀剂膜的图案蚀刻掩模膜来暴露在掩模膜下形成的有机膜; 并通过含有O 2（氧），COS（羰基硫酸盐）和Cl 2（氯）的混合气体的等离子体蚀刻有机膜。