公开(公告)号：US12288676B2

公开(公告)日：2025-04-29

申请号：US17337696

申请日：2021-06-03

Applicant: Tokyo Electron Limited

Inventor： Takayuki Ishii ,  Kazuya Nagaseki ,  Michishige Saito

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/687

Abstract: A stage includes a first member made of a material having a density of 5.0 g/cm3 or less, and a second member joined to the first member. The second member is made of a material having a linear expansion coefficient of 5.0×10−6/K or less and a thermal conductivity of 100 W/mK or more. A flow passage for a temperature control medium is formed in at least one of the first member and the second member.

公开(公告)号：US09349574B2

公开(公告)日：2016-05-24

申请号：US14414946

申请日：2013-08-05

Applicant: Tokyo Electron Limited

Inventor： Ryoichi Yoshida ,  Takayuki Ishii ,  Ken Kobayashi

IPC: C03C15/00 ,  H01J37/32 ,  H01L21/027 ,  H01L21/311

CPC classification number: H01J37/32082 ,  H01J37/32449 ,  H01J37/3266 ,  H01J37/32669 ,  H01J37/32688 ,  H01J2237/334 ,  H01L21/0273 ,  H01L21/31116 ,  H01L21/31144

Abstract: A plasma etching method includes a plasma process of plasma-processing a surface of a photoresist, which has a predetermined pattern with plasma generated from a hydrogen-containing gas. Further, the plasma etching method includes an etching process of etching a silicon-containing film with plasma generated from a CF-based gas and a gas containing a CHF-based gas by using the plasma-processed photoresist as a mask. Furthermore, in the plasma etching method, the plasma process and the etching process are repeated at least two or more times.

Abstract translation: 等离子体蚀刻方法包括等离子体处理等离子体处理光刻胶的表面，该表面具有与含氢气体产生的等离子体具有预定图案。 此外，等离子体蚀刻方法包括通过使用等离子体处理的光致抗蚀剂作为掩模，从基于CF的气体产生的等离子体和含有基于CHF的气体的气体蚀刻含硅膜的蚀刻工艺。 此外，在等离子体蚀刻方法中，等离子体处理和蚀刻处理重复至少两次以上。

公开(公告)号：US20150352587A1

公开(公告)日：2015-12-10

申请号：US14729385

申请日：2015-06-03

Applicant: Tokyo Electron Limited

Inventor： Katsunori Ichino ,  Takayuki Ishii ,  Kouzou Kawahara ,  Daisuke Simokawa ,  Kazuyuki Tashiro

IPC: B05C5/02 ,  B05D1/00 ,  B05D1/26 ,  B05C11/10

CPC classification number: B05C5/0216 ,  B05C5/0225 ,  B05C11/1002 ,  B05D1/002 ,  B05D1/005 ,  G03F7/162 ,  H01L21/6715

Abstract: Disclosed is a liquid coating method. The method executes processes of: coating a coating liquid in a spiral form on a surface of a substrate by ejecting the coating liquid from the ejection nozzle while moving the ejection nozzle in a predetermined direction between the rotary axis and a peripheral edge of the substrate during rotation of the substrate; making a linear velocity at an ejection position of the coating liquid from the ejection nozzle substantially constant by reducing a number of rotations of the substrate as the ejection position is positioned closer to the peripheral edge of the substrate; and making an ejection flow rate of the coating liquid ejected from the ejection nozzle substantially constant by changing a gap between the ejection port of the ejection nozzle and the surface of the substrate based on a flow rate of the coating liquid before ejection from the ejection nozzle.

Abstract translation: 公开了一种液体涂布方法。 该方法执行以下处理：在衬底的表面上涂布涂布液，从喷嘴喷射涂布液，同时在旋转轴与衬底的周缘之间沿预定方向移动喷嘴， 基板旋转; 通过当喷射位置更靠近基板的周缘定位时，通过减少基板的旋转数来使来自喷嘴的涂布液的喷射位置处的线速度基本上恒定; 并且通过基于喷射喷嘴之前的涂布液的流量来改变喷射嘴的喷射口和基板的表面之间的间隙，使从喷嘴喷出的涂布液的喷射流量基本上恒定 。

公开(公告)号：US11919032B2

公开(公告)日：2024-03-05

申请号：US17458691

申请日：2021-08-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takayuki Ishii ,  Kazuya Nagaseki ,  Michishige Saito

IPC: B05C5/02 ,  B05C11/10 ,  B05C17/005 ,  C23C14/00 ,  C23C16/455

CPC classification number: B05C5/02 ,  B05C11/1013 ,  B05C17/00536 ,  C23C14/0042 ,  C23C14/0063 ,  C23C16/45557

Abstract: A film forming apparatus is disclosed. The apparatus comprises a chamber; an exhaust unit configured to reduce the pressure in the chamber to a predetermined vacuum level; a holder disposed in the chamber and configured to hold a film forming target member on which a film is to be formed; a supply unit configured to supply a film forming material containing silicon to a surface of the film forming target member; and a heat source configured to perform heating at the predetermined vacuum level to melt the supplied film forming material.

公开(公告)号：US20220302077A1

公开(公告)日：2022-09-22

申请号：US17636455

申请日：2020-08-12

Applicant: Tokyo Electron Limited

Inventor： Takashi Terada ,  Takayuki Ishii

IPC: H01L23/00 ,  H01L21/683 ,  H01L21/66

Abstract: A bonding apparatus includes a first holder configured to hold a first substrate divided into multiple chips with a tape and a ring frame therebetween, the first substrate being attached to the tape, and an edge of the tape being attached to the ring frame; a second holder configured to hold a second substrate, which is disposed on an opposite side to the tape with respect to the first substrate therebetween, while maintaining a distance from the first substrate; and a pressing device configured to press the multiple chips one by one with the tape therebetween to press and bond the corresponding chip to the second substrate.

公开(公告)号：US20210242027A1

公开(公告)日：2021-08-05

申请号：US16973515

申请日：2019-05-29

Applicant: Tokyo Electron Limited

Inventor： Norifumi Kohama ,  Takayuki Ishii

IPC: H01L21/304 ,  H01L21/67 ,  H01L21/687 ,  H01L21/263 ,  B23K26/53 ,  B23K26/324

Abstract: A substrate processing method of processing a substrate includes: forming a modification layer at least on a surface layer of a rear surface of the substrate or within the substrate by radiating a laser beam; and processing a front surface of the substrate in a state that the rear surface of the substrate is held. A modification device includes a laser irradiation unit configured to form a modification layer at least on a surface layer of the rear surface of the substrate or within the substrate by radiating a laser beam.

公开(公告)号：US09238245B2

公开(公告)日：2016-01-19

申请号：US13921286

申请日：2013-06-19

Applicant: Tokyo Electron Limited

Inventor： Takayuki Ishii ,  Kimio Motoda ,  Takashi Terada ,  Atsushi Yamashita ,  Shigeto Tsuruta

IPC: B05C5/02 ,  H01L21/67

CPC classification number: B05C5/0258 ,  B05C5/0254 ,  H01L21/6715 ,  Y10T137/0318

Abstract: A coating apparatus includes a nozzle, a moving mechanism, a pressure adjusting unit and a pressure control unit. The nozzle is provided with a storage chamber and a slit-like flow path, and configured to discharge the coating liquid from a discharge port formed at a front end of the flow path. The moving mechanism moves the nozzle and a substrate relatively to each other along the surface of the substrate. The pressure adjusting unit adjusts the pressure inside the storage chamber. The pressure control unit controls the pressure adjusting unit so as to adjust pressure inside the storage chamber. The pressure control unit controls the pressure adjusting unit such that the inside of the storage chamber becomes a negative pressure, and fills the coating liquid inside the storage chamber while slowly decreasing the negative pressure inside the storage chamber.

Abstract translation: 涂布装置包括喷嘴，移动机构，压力调节单元和压力控制单元。 喷嘴设置有储存室和狭缝状流路，并且构造成从形成在流路前端的排出口排出涂布液。 移动机构沿着基板的表面使喷嘴和基板彼此相对移动。 压力调节单元调节储存室内的压力。 压力控制单元控制压力调节单元以调节储存室内的压力。 压力控制单元控制压力调节单元，使得储存室的内部成为负压，并且在缓慢减小储存室内的负压的同时，在储存室内填充涂布液。

公开(公告)号：US20150206715A1

公开(公告)日：2015-07-23

申请号：US14414946

申请日：2013-08-05

Applicant: Tokyo Electron Limited

Inventor： Ryoichi Yoshida ,  Takayuki Ishii ,  Ken Kobayashi

IPC: H01J37/32

CPC classification number: H01J37/32082 ,  H01J37/32449 ,  H01J37/3266 ,  H01J37/32669 ,  H01J37/32688 ,  H01J2237/334 ,  H01L21/0273 ,  H01L21/31116 ,  H01L21/31144

Abstract: A plasma etching method includes a plasma process of plasma-processing a surface of a photoresist, which has a predetermined pattern with plasma generated from a hydrogen-containing gas. Further, the plasma etching method includes an etching process of etching a silicon-containing film with plasma generated from a CF-based gas and a gas containing a CHF-based gas by using the plasma-processed photoresist as a mask. Furthermore, in the plasma etching method, the plasma process and the etching process are repeated at least two or more times.

Abstract translation: 等离子体蚀刻方法包括等离子体处理等离子体处理光刻胶的表面，该表面具有与含氢气体产生的等离子体具有预定图案。 此外，等离子体蚀刻方法包括通过使用等离子体处理的光致抗蚀剂作为掩模，从基于CF的气体产生的等离子体和含有基于CHF的气体的气体蚀刻含硅膜的蚀刻工艺。 此外，在等离子体蚀刻方法中，等离子体处理和蚀刻处理重复至少两次以上。

公开(公告)号：US20140000518A1

公开(公告)日：2014-01-02

申请号：US13921286

申请日：2013-06-19

Applicant: Tokyo Electron Limited

Inventor： Takayuki Ishii ,  Kimio Motoda ,  Takashi Terada ,  Atsushi Yamashita ,  Shigeto Tsuruta

IPC: B05C5/02

CPC classification number: B05C5/0258 ,  B05C5/0254 ,  H01L21/6715 ,  Y10T137/0318

Abstract: A coating apparatus includes a nozzle, a moving mechanism, a pressure adjusting unit and a pressure control unit. The nozzle is provided with a storage chamber and a slit-like flow path, and configured to discharge the coating liquid from a discharge port formed at a front end of the flow path. The moving mechanism moves the nozzle and a substrate relatively to each other along the surface of the substrate. The pressure adjusting unit adjusts the pressure inside the storage chamber. The pressure control unit controls the pressure adjusting unit so as to adjust pressure inside the storage chamber. The pressure control unit controls the pressure adjusting unit such that the inside of the storage chamber becomes a negative pressure, and fills the coating liquid inside the storage chamber while slowly decreasing the negative pressure inside the storage chamber.

Abstract translation: 涂布装置包括喷嘴，移动机构，压力调节单元和压力控制单元。 喷嘴设置有储存室和狭缝状流路，并且构造成从形成在流路前端的排出口排出涂布液。 移动机构沿着基板的表面使喷嘴和基板彼此相对移动。 压力调节单元调节储存室内的压力。 压力控制单元控制压力调节单元以调节储存室内的压力。 压力控制单元控制压力调节单元，使得储存室的内部成为负压，并且在缓慢减小储存室内的负压的同时，在储存室内填充涂布液。

公开(公告)号：US20140000517A1

公开(公告)日：2014-01-02

申请号：US13920219

申请日：2013-06-18

Applicant: Tokyo Electron Limited

Inventor： Takayuki Ishii ,  Takahiro Sakamoto ,  Takahiro Kitano ,  Shoichi Terada

IPC: B05C5/02

CPC classification number: B05C5/0258 ,  B05B1/044 ,  B05B12/081 ,  B05C5/0254 ,  H01L21/6715

Abstract: Disclosed is a coating apparatus capable of enhancing the film thickness uniformity. The coating apparatus includes a nozzle and a moving mechanism. The nozzle includes a storage chamber that stores a coating liquid and a slit-like flow path that is in communication with the storage chamber, and discharges the coating liquid through a discharge port formed at a front end of the flow path. The moving mechanism moves the nozzle and the substrate relatively to each other along a surface of the substrate. Also, in the flow path provided in the nozzle, flow resistance at the central portion in the longitudinal direction is larger than that at both end portions in the longitudinal direction.

Abstract translation: 公开了能够提高膜厚均匀性的涂布装置。 涂布装置包括喷嘴和移动机构。 喷嘴包括储存室，其存储与储存室连通的涂布液体和狭缝状流路，并且通过形成在流路前端的排出口排出涂布液。 移动机构沿着基板的表面使喷嘴和基板彼此相对移动。 此外，在设置在喷嘴中的流路中，长度方向中央部的流动阻力大于长度方向的两端部的流动阻力。