公开(公告)号：US20210111005A1

公开(公告)日：2021-04-15

申请号：US17066586

申请日：2020-10-09

Applicant: Tokyo Electron Limited

Inventor： Takayuki Ishii ,  Kazuya Nagaseki ,  Michishige Saito ,  Shota Kaneko

IPC: H01J37/32 ,  B23K26/354 ,  B33Y10/00 ,  B33Y70/00 ,  B33Y80/00

Abstract: A member to be used in a substrate processing apparatus is provided. The member is formed of aluminum containing silicon, and the silicon has a particle diameter of 1 μm or less.

公开(公告)号：US20200251315A1

公开(公告)日：2020-08-06

申请号：US16778071

申请日：2020-01-31

Applicant: Tokyo Electron Limited

Inventor： Michishige Saito ,  Shota Kaneko

IPC: H01J37/32 ,  F28F1/40 ,  H01L21/683

Abstract: A placing table, on which a substrate is placed, includes a base. The base includes a first path configured to allow a heat transfer medium having a first temperature to flow therein; a first heat insulating layer disposed under the first path; and a seal member disposed under the first heat insulating layer.

公开(公告)号：US11981993B2

公开(公告)日：2024-05-14

申请号：US16646277

申请日：2019-05-10

Applicant: Tokyo Electron Limited

Inventor： Michishige Saito ,  Kazuya Nagaseki ,  Shota Kaneko

IPC: C23C16/44 ,  B23K26/144 ,  B23K26/34 ,  B33Y10/00 ,  B33Y50/00 ,  B33Y80/00 ,  C23C16/48 ,  H01J37/32

CPC classification number: C23C16/4404 ,  B23K26/144 ,  B23K26/34 ,  B33Y10/00 ,  B33Y80/00 ,  C23C16/44 ,  C23C16/483 ,  C23C16/487 ,  H01J37/32477 ,  H01J37/32642 ,  H01J37/32935 ,  B33Y50/00 ,  H01J2237/332 ,  H01J2237/334

Abstract: A forming method of a component used in a plasma processing apparatus includes irradiating an energy beam to a source material of the component while supplying the source material based on a surface state of the component.

公开(公告)号：US10665416B2

公开(公告)日：2020-05-26

申请号：US16039446

申请日：2018-07-19

Applicant: Tokyo Electron Limited

Inventor： Shinji Kubota ,  Naohiko Okunishi ,  Yosuke Tamuro ,  Shota Kaneko

IPC: H01J37/06 ,  H01J3/02 ,  H01J37/32

Abstract: A substrate processing apparatus includes a chamber, a pedestal provided in the chamber and having a substrate holding region to hold a substrate thereon, and a gas supply part to supply a gas into the chamber. A plurality of electron gun arrays two-dimensionally arranged so as to cover the substrate holding region is provided and configured to emit electrons toward the gas to cause interactions between the emitted electrons and the gas. A plurality of electron energy control parts is correspondingly provided at each of the electron gun arrays and configured to control energy of the electrons emitted from each of the electron gun arrays independently of each other.

公开(公告)号：US11967487B2

公开(公告)日：2024-04-23

申请号：US16646258

申请日：2019-05-10

Applicant: Tokyo Electron Limited

Inventor： Michishige Saito ,  Kazuya Nagaseki ,  Shota Kaneko

IPC: B28B1/00 ,  H01J37/32

CPC classification number: H01J37/32495 ,  B28B1/001 ,  H01J37/32559 ,  H01J37/32724 ,  H01J37/32807 ,  H01J2237/332 ,  H01J2237/334

Abstract: A forming method of a component for use in a plasma processing apparatus includes irradiating, while supplying a source material of a first ceramic and a source material of a second ceramic different from the first ceramic, an energy beam to the source material of the first ceramic and the source material of the second ceramic.

公开(公告)号：US11532461B2

公开(公告)日：2022-12-20

申请号：US16659744

申请日：2019-10-22

Applicant: Tokyo Electron Limited

Inventor： Michishige Saito ,  Shota Kaneko ,  Shuhei Yamabe

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/54

Abstract: A substrate processing apparatus includes a processing vessel; a placing table provided within the processing vessel and configured to place a substrate thereon; and a component disposed between the processing vessel and the placing table, the component constituting an anode. The component has a flow path through which a heat exchange medium flows.

公开(公告)号：US20210366691A1

公开(公告)日：2021-11-25

申请号：US16646258

申请日：2019-05-10

Applicant: Tokyo Electron Limited

Inventor： Michishige Saito ,  Kazuya Nagaseki ,  Shota Kaneko

IPC: H01J37/32

Abstract: A forming method of a component for use in a plasma processing apparatus includes irradiating, while supplying a source material of a first ceramic and a source material of a second ceramic different from the first ceramic, an energy beam to the source material of the first ceramic and the source material of the second ceramic.

公开(公告)号：US12243758B2

公开(公告)日：2025-03-04

申请号：US17084934

申请日：2020-10-30

Applicant: Tokyo Electron Limited

Inventor： Shota Kaneko ,  Shigemi Oono ,  Norihide Sagara

IPC: G05B19/406 ,  H01L21/67 ,  H04N7/18

Abstract: A monitoring system is for a sealing apparatus that seals a substrate treatment apparatus by a housing and fills a space sealed by the housing with a predetermined gas atmosphere. The monitoring system includes: a laser sensor for a region, which a person can enter in a space between the housing and the substrate treatment apparatus, as a detection region; and a controller that outputs a control signal to the substrate treatment apparatus or the sealing apparatus based on a detection result by the laser sensor or outputs a notification signal based on the detection result.

公开(公告)号：US20240254620A1

公开(公告)日：2024-08-01

申请号：US18630262

申请日：2024-04-09

Applicant: Tokyo Electron Limited

Inventor： Michishige Saito ,  Kazuya Nagaseki ,  Shota Kaneko

IPC: C23C16/44 ,  B23K26/144 ,  B23K26/34 ,  B33Y10/00 ,  B33Y50/00 ,  B33Y80/00 ,  C23C16/48 ,  H01J37/32

CPC classification number: C23C16/4404 ,  B23K26/144 ,  B23K26/34 ,  B33Y10/00 ,  B33Y80/00 ,  C23C16/44 ,  C23C16/483 ,  C23C16/487 ,  H01J37/32477 ,  H01J37/32642 ,  H01J37/32935 ,  B33Y50/00 ,  H01J2237/332 ,  H01J2237/334

Abstract: A forming method of a component used in a plasma processing apparatus includes irradiating an energy beam to a source material of the component while supplying the source material based on a surface state of the component.

公开(公告)号：US20240234099A1

公开(公告)日：2024-07-11

申请号：US18610723

申请日：2024-03-20

Applicant: Tokyo Electron Limited

Inventor： Michishige Saito ,  Kazuya Nagaseki ,  Shota Kaneko

IPC: H01J37/32 ,  B28B1/00

CPC classification number: H01J37/32495 ,  B28B1/001 ,  H01J37/32559 ,  H01J37/32724 ,  H01J37/32807 ,  H01J2237/332 ,  H01J2237/334

Abstract: A forming method of a component for use in a plasma processing apparatus includes irradiating, while supplying a source material of a first ceramic and a source material of a second ceramic different from the first ceramic, an energy beam to the source material of the first ceramic and the source material of the second ceramic.