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11.发明申请公开(公告)号：US20100246622A1
公开(公告)日：2010-09-30
申请号：US12726524
申请日：2010-03-18
申请人： Hideki Watanabe , Takao Miyajima , Masao Ikeda , Hiroyuki Yokoyama , Tomoyuki Oki , Masaru Kuramoto
发明人： Hideki Watanabe , Takao Miyajima , Masao Ikeda , Hiroyuki Yokoyama , Tomoyuki Oki , Masaru Kuramoto
CPC分类号： H01S5/0625 , B82Y20/00 , H01S5/0425 , H01S5/0602 , H01S5/0658 , H01S5/14 , H01S5/22 , H01S5/3216 , H01S5/34333
摘要： A method for manufacturing a bi-section semiconductor laser device includes the steps of (A) forming a stacked structure obtained by stacking, on a substrate in sequence, a first compound semiconductor layer of a first conductivity type, a compound semiconductor layer that constitutes a light-emitting region and a saturable absorption region, and a second compound semiconductor layer of a second conductivity type; (B) forming a belt-shaped second electrode on the second compound semiconductor layer; (C) forming a ridge structure by etching at least part of the second compound semiconductor layer using the second electrode as an etching mask; and (D) forming a resist layer for forming a separating groove in the second electrode and then forming the separating groove in the second electrode by wet etching so that the separating groove separates the second electrode into a first portion and a second portion.
摘要翻译： 一种制造双相半导体激光器件的方法包括以下步骤：（A）形成叠层结构，其通过在基板上依次层叠第一导电类型的第一化合物半导体层，构成第一导电类型的化合物半导体层 发光区域和可饱和吸收区域;以及第二导电类型的第二化合物半导体层; （B）在第二化合物半导体层上形成带状的第二电极; （C）通过使用所述第二电极作为蚀刻掩模蚀刻所述第二化合物半导体层的至少一部分来形成脊结构; 和（D）在第二电极中形成用于形成分隔槽的抗蚀剂层，然后通过湿蚀刻在第二电极中形成分隔槽，使得分离槽将第二电极分离成第一部分和第二部分。
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12.发明授权公开(公告)号：US08329483B2
公开(公告)日：2012-12-11
申请号：US12726524
申请日：2010-03-18
申请人： Hideki Watanabe , Takao Miyajima , Masao Ikeda , Hiroyuki Yokoyama , Tomoyuki Oki , Masaru Kuramoto
发明人： Hideki Watanabe , Takao Miyajima , Masao Ikeda , Hiroyuki Yokoyama , Tomoyuki Oki , Masaru Kuramoto
IPC分类号： H01L21/00
CPC分类号： H01S5/0625 , B82Y20/00 , H01S5/0425 , H01S5/0602 , H01S5/0658 , H01S5/14 , H01S5/22 , H01S5/3216 , H01S5/34333
摘要： A method for manufacturing a bi-section semiconductor laser device includes the steps of (A) forming a stacked structure obtained by stacking, on a substrate in sequence, a first compound semiconductor layer of a first conductivity type, a compound semiconductor layer that constitutes a light-emitting region and a saturable absorption region, and a second compound semiconductor layer of a second conductivity type; (B) forming a belt-shaped second electrode on the second compound semiconductor layer; (C) forming a ridge structure by etching at least part of the second compound semiconductor layer using the second electrode as an etching mask; and (D) forming a resist layer for forming a separating groove in the second electrode and then forming the separating groove in the second electrode by wet etching so that the separating groove separates the second electrode into a first portion and a second portion.
摘要翻译： 一种制造双相半导体激光器件的方法包括以下步骤：（A）形成叠层结构，其通过在基板上依次层叠第一导电类型的第一化合物半导体层，构成第一导电类型的化合物半导体层 发光区域和可饱和吸收区域;以及第二导电类型的第二化合物半导体层; （B）在第二化合物半导体层上形成带状的第二电极; （C）通过使用所述第二电极作为蚀刻掩模蚀刻所述第二化合物半导体层的至少一部分来形成脊结构; 和（D）在第二电极中形成用于形成分隔槽的抗蚀剂层，然后通过湿蚀刻在第二电极中形成分隔槽，使得分离槽将第二电极分离成第一部分和第二部分。
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13.发明申请公开(公告)号：US20120281726A1
公开(公告)日：2012-11-08
申请号：US13553380
申请日：2012-07-19
申请人： Hideki Watanabe , Takao Miyajima , Masao Ikeda , Hiroyuki Yokoyama , Tomoyuki Oki , Masaru Kuramoto
发明人： Hideki Watanabe , Takao Miyajima , Masao Ikeda , Hiroyuki Yokoyama , Tomoyuki Oki , Masaru Kuramoto
IPC分类号： H01S5/02
CPC分类号： H01S5/0625 , B82Y20/00 , H01S5/0425 , H01S5/0602 , H01S5/0658 , H01S5/14 , H01S5/22 , H01S5/3216 , H01S5/34333
摘要： A method for manufacturing a bi-section semiconductor laser device includes the steps of (A) forming a stacked structure obtained by stacking, on a substrate in sequence, a first compound semiconductor layer of a first conductivity type, a compound semiconductor layer that constitutes a light-emitting region and a saturable absorption region, and a second compound semiconductor layer of a second conductivity type; (B) forming a belt-shaped second electrode on the second compound semiconductor layer; (C) forming a ridge structure by etching at least part of the second compound semiconductor layer using the second electrode as an etching mask; and (D) forming a resist layer for forming a separating groove in the second electrode and then forming the separating groove in the second electrode by wet etching so that the separating groove separates the second electrode into a first portion and a second portion.
摘要翻译： 一种制造双相半导体激光器件的方法包括以下步骤：（A）形成叠层结构，其通过在基板上依次层叠第一导电类型的第一化合物半导体层，构成第一导电类型的化合物半导体层 发光区域和可饱和吸收区域;以及第二导电类型的第二化合物半导体层; （B）在第二化合物半导体层上形成带状的第二电极; （C）通过使用所述第二电极作为蚀刻掩模蚀刻所述第二化合物半导体层的至少一部分来形成脊结构; 和（D）在第二电极中形成用于形成分隔槽的抗蚀剂层，然后通过湿蚀刻在第二电极中形成分隔槽，使得分离槽将第二电极分离成第一部分和第二部分。
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14.发明授权公开(公告)号：US08575626B2
公开(公告)日：2013-11-05
申请号：US13553380
申请日：2012-07-19
申请人： Hideki Watanabe , Takao Miyajima , Masao Ikeda , Hiroyuki Yokoyama , Tomoyuki Oki , Masaru Kuramoto
发明人： Hideki Watanabe , Takao Miyajima , Masao Ikeda , Hiroyuki Yokoyama , Tomoyuki Oki , Masaru Kuramoto
CPC分类号： H01S5/0625 , B82Y20/00 , H01S5/0425 , H01S5/0602 , H01S5/0658 , H01S5/14 , H01S5/22 , H01S5/3216 , H01S5/34333
摘要： A method for manufacturing a bi-section semiconductor laser device includes the steps of (A) forming a stacked structure obtained by stacking, on a substrate in sequence, a first compound semiconductor layer of a first conductivity type, a compound semiconductor layer that constitutes a light-emitting region and a saturable absorption region, and a second compound semiconductor layer of a second conductivity type; (B) forming a belt-shaped second electrode on the second compound semiconductor layer; (C) forming a ridge structure by etching at least part of the second compound semiconductor layer using the second electrode as an etching mask; and (D) forming a resist layer for forming a separating groove in the second electrode and then forming the separating groove in the second electrode by wet etching so that the separating groove separates the second electrode into a first portion and a second portion.
摘要翻译： 一种制造双相半导体激光器件的方法包括以下步骤：（A）形成叠层结构，其通过在基板上依次层叠第一导电类型的第一化合物半导体层，构成第一导电类型的化合物半导体层 发光区域和可饱和吸收区域;以及第二导电类型的第二化合物半导体层; （B）在第二化合物半导体层上形成带状的第二电极; （C）通过使用所述第二电极作为蚀刻掩模蚀刻所述第二化合物半导体层的至少一部分来形成脊结构; 和（D）在第二电极中形成用于形成分隔槽的抗蚀剂层，然后通过湿蚀刻在第二电极中形成分隔槽，使得分离槽将第二电极分离成第一部分和第二部分。
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公开(公告)号：US08442079B2
公开(公告)日：2013-05-14
申请号：US13035540
申请日：2011-02-25
申请人： Tomoyuki Oki , Masaru Kuramoto , Masao Ikeda , Takao Miyajima , Hideki Watanabe , Hiroyuki Yokoyama
发明人： Tomoyuki Oki , Masaru Kuramoto , Masao Ikeda , Takao Miyajima , Hideki Watanabe , Hiroyuki Yokoyama
IPC分类号： H01S3/098
摘要： Provided is a driving method of a mode-locked semiconductor laser device comprising a laminated structure in which a first compound semiconductor layer, a third compound semiconductor layer having an emission region and a second compound semiconductor layer are successively laminated, a second electrode, and a first electrode. The laminated structure is formed on a compound semiconductor substrate having polarity, the third compound semiconductor layer includes a quantum well structure having a well layer and a barrier layer. The well layer has a depth of 1 nm or more and 10 nm or less. The barrier layer has an impurity doping density of 2×1018 cm−3 or more and 1×1020 cm−3 or less. An optical pulse is generated in the emission region by passing a current from the second electrode to the first electrode via the laminated structure.
摘要翻译： 提供了一种锁模半导体激光器件的驱动方法，其包括层叠结构，其中第一化合物半导体层，具有发射区域的第三化合物半导体层和第二化合物半导体层被连续层压，第二电极和 第一电极。 层叠结构形成在具有极性的化合物半导体基板上，第三化合物半导体层包括具有阱层和阻挡层的量子阱结构。 阱层的深度为1nm以上且10nm以下。 势垒层的杂质掺杂密度为2×1018cm-3以上且1×1020cm-3以下。 通过将电流从第二电极通过层压结构传递到第一电极，在发射区域中产生光脉冲。
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公开(公告)号：US08982920B2
公开(公告)日：2015-03-17
申请号：US13364957
申请日：2012-02-02
IPC分类号： H01S5/00 , H01S5/22 , B82Y20/00 , H01S5/022 , H01S5/026 , H01S5/028 , H01S5/042 , H01S5/065 , H01S5/14 , H01S5/34 , H01S5/343 , H01S5/40 , H01S5/50
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/02268 , H01S5/02272 , H01S5/0265 , H01S5/0287 , H01S5/0425 , H01S5/0657 , H01S5/141 , H01S5/342 , H01S5/34333 , H01S5/4006 , H01S5/50 , H01S2301/176
摘要： A submount having a structure and a configuration resistant to an increase in manufacturing cost and a reduction in yields or reliability, and including an oblique waveguide is provided. A submount having a first surface and allowing a semiconductor light-emitting element including a waveguide to be fixed on the first surface, the waveguide having an axis line inclined at θWG (degrees) with respect to a normal to a light-incident/emission end surface of the semiconductor light-emitting element, and made of a semiconductor material with a refractive index nLE, the submount includes: a fusion-bonding material layer on the first surface; and an alignment mark formed in the fusion-bonding material layer, the alignment mark allowed to be recognized at an angle θSM=sin−1 [nLE·sin(θWG)/n0], where a refractive index of a light-transmitting medium in proximity to the outside of the light-incident/emission end surface of the semiconductor light-emitting element is n0.
摘要翻译： 提供了具有抵抗制造成本增加和产量或可靠性降低的结构和结构的基座，并且包括倾斜波导。 具有第一表面并且允许包括波导的半导体发光元件固定在第一表面上的基座，所述波导具有倾斜的轴线;相对于光入射/ 所述半导体发光元件的发射端面由折射率为nLE的半导体材料制成，所述基座包括：在所述第一表面上的熔接材料层; 以及形成在熔接材料层中的对准标记，使得能够以角度＆lt; SM = sin-1 [nLE·sin（＆amp; WG）/ n0]来识别对准标记，其中光的折射率 在半导体发光元件的光入射/发射端面的外侧附近的发射介质为n0。
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17.发明申请SUBMOUNT, SUBMOUNT ASSEMBLY, AND SUBMOUNT ASSEMBLING METHOD 有权SUBMOUNT，SUBMOUNT ASSEMBLY和SUBMOUNT组装方法公开(公告)号：US20120201259A1
公开(公告)日：2012-08-09
申请号：US13364957
申请日：2012-02-02
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/02268 , H01S5/02272 , H01S5/0265 , H01S5/0287 , H01S5/0425 , H01S5/0657 , H01S5/141 , H01S5/342 , H01S5/34333 , H01S5/4006 , H01S5/50 , H01S2301/176
摘要： A submount having a structure and a configuration resistant to an increase in manufacturing cost and a reduction in yields or reliability, and including an oblique waveguide is provided. A submount having a first surface and allowing a semiconductor light-emitting element including a waveguide to be fixed on the first surface, the waveguide having an axis line inclined at θWG (degrees) with respect to a normal to a light-incident/emission end surface of the semiconductor light-emitting element, and made of a semiconductor material with a refractive index nLE, the submount includes: a fusion-bonding material layer on the first surface; and an alignment mark formed in the fusion-bonding material layer, the alignment mark allowed to be recognized at an angle θSM=sin−1 [nLE·sin(θWG)/n0], where a refractive index of a light-transmitting medium in proximity to the outside of the light-incident/emission end surface of the semiconductor light-emitting element is n0.
摘要翻译： 提供了具有抵抗制造成本增加和产量或可靠性降低的结构和结构的基座，并且包括倾斜波导。 具有第一表面并且允许包括波导的半导体发光元件固定在第一表面上的基座，所述波导具有倾斜的轴线;相对于光入射/ 所述半导体发光元件的发射端面由折射率为nLE的半导体材料制成，所述基座包括：在所述第一表面上的熔接材料层; 以及形成在熔接材料层中的对准标记，使得能够以角度＆lt; SM = sin-1 [nLE·sin（＆amp; WG）/ n0]来识别对准标记，其中光的折射率 在半导体发光元件的光入射/发射端面的外侧附近的发射介质为n0。
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公开(公告)号：US08831055B2
公开(公告)日：2014-09-09
申请号：US13035585
申请日：2011-02-25
CPC分类号： H01S5/3407 , H01S5/0601 , H01S5/30 , H01S5/343
摘要： There is provided a driving method of a self-oscillating semiconductor laser device including a first compound semiconductor layer having a first conductive type and composed of a GaN base compound semiconductor, a third compound semiconductor layer and a second compound semiconductor layer configuring an emission region and a saturable absorption region, are successively laminated, a second electrode formed on the second compound semiconductor layer, and a first electrode electrically connected to the first compound semiconductor layer. The second electrode is separated into a first portion to create a forward bias state by passing current to the first electrode via the emission region and a second portion to apply an electric field to the saturable absorption region by a separation groove. The current greater than a current value where kink is occurred in optical output-current characteristics is to be passed to the first portion of the second electrode.
摘要翻译： 提供了一种自激振荡半导体激光器件的驱动方法，该器件包括具有第一导电类型并由GaN基化合物半导体构成的第一化合物半导体层，构成发光区域的第三化合物半导体层和第二化合物半导体层， 依次层叠可饱和吸收区域，形成在第二化合物半导体层上的第二电极和与第一化合物半导体层电连接的第一电极。 第二电极被分离为第一部分，以通过经由发射区域将电流传递到第一电极以产生正向偏置状态，以及第二部分，以通过分离槽将电场施加到可饱和吸收区域。 大于在光输出电流特性中发生扭结的当前值的电流将被传递到第二电极的第一部分。
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19.发明申请公开(公告)号：US20110216797A1
公开(公告)日：2011-09-08
申请号：US13035585
申请日：2011-02-25
CPC分类号： H01S5/3407 , H01S5/0601 , H01S5/30 , H01S5/343
摘要： There is provided a driving method of a self-oscillating semiconductor laser device including a first compound semiconductor layer having a first conductive type and composed of a GaN base compound semiconductor, a third compound semiconductor layer and a second compound semiconductor layer configuring an emission region and a saturable absorption region, are successively laminated, a second electrode formed on the second compound semiconductor layer, and a first electrode electrically connected to the first compound semiconductor layer. The second electrode is separated into a first portion to create a forward bias state by passing current to the first electrode via the emission region and a second portion to apply an electric field to the saturable absorption region by a separation groove. The current greater than a current value where kink is occurred in optical output-current characteristics is to be passed to the first portion of the second electrode.
摘要翻译： 提供了一种自激振荡半导体激光器件的驱动方法，该器件包括具有第一导电类型并由GaN基化合物半导体构成的第一化合物半导体层，构成发光区域的第三化合物半导体层和第二化合物半导体层， 依次层叠可饱和吸收区域，形成在第二化合物半导体层上的第二电极和与第一化合物半导体层电连接的第一电极。 第二电极被分离为第一部分，以通过经由发射区域将电流传递到第一电极以产生正向偏置状态，以及第二部分，以通过分离槽将电场施加到可饱和吸收区域。 大于在光输出电流特性中发生扭结的当前值的电流将被传递到第二电极的第一部分。
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公开(公告)号：US20120099610A1
公开(公告)日：2012-04-26
申请号：US13267509
申请日：2011-10-06
IPC分类号： H01S3/098
CPC分类号： H01S5/0657 , B82Y20/00 , H01S5/0287 , H01S5/141 , H01S5/3063 , H01S5/3202 , H01S5/3216 , H01S5/34333
摘要： A laser diode assembly includes: a mode-locked laser diode device; a diffraction grating that configures an external resonator, returns primary or more order diffracted light to the mode-locked laser diode device, and outputs 0-order diffracted light outside; and an imaging section provided between the mode-locked laser diode device and the diffraction grating and imaging an image of a light output end face of the mode-locked laser diode device on the diffraction grating.
摘要翻译： 激光二极管组件包括：锁模激光二极管器件; 配置外部谐振器的衍射光栅将一次或更多次衍射光返回到锁模激光二极管器件，并将0级衍射光输出到外部; 以及设置在所述锁模激光二极管器件和所述衍射光栅之间的成像部分，并且对所述衍射光栅上的所述锁模激光二极管器件的光输出端面的图像进行成像。
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