公开(公告)号：US20110216788A1

公开(公告)日：2011-09-08

申请号：US13035540

申请日：2011-02-25

申请人： Tomoyuki Oki ,  Masaru Kuramoto ,  Masao Ikeda ,  Takao Miyajima ,  Hideki Watanabe ,  Hiroyuki Yokoyama

发明人： Tomoyuki Oki ,  Masaru Kuramoto ,  Masao Ikeda ,  Takao Miyajima ,  Hideki Watanabe ,  Hiroyuki Yokoyama

IPC分类号： H01S3/098

摘要： Provided is a driving method of a mode-locked semiconductor laser device comprising a laminated structure in which a first compound semiconductor layer, a third compound semiconductor layer having an emission region and a second compound semiconductor layer are successively laminated, a second electrode, and a first electrode. The laminated structure is formed on a compound semiconductor substrate having polarity, the third compound semiconductor layer includes a quantum well structure having a well layer and a barrier layer. The well layer has a depth of 1 nm or more and 10 nm or less. The barrier layer has an impurity doping density of 2×1018 cm−3 or more and 1×1020 cm−3 or less. An optical pulse is generated in the emission region by passing a current from the second electrode to the first electrode via the laminated structure.

摘要翻译： 提供了一种锁模半导体激光器件的驱动方法，其包括层叠结构，其中第一化合物半导体层，具有发射区域的第三化合物半导体层和第二化合物半导体层被连续层压，第二电极和 第一电极。 层叠结构形成在具有极性的化合物半导体基板上，第三化合物半导体层包括具有阱层和阻挡层的量子阱结构。 阱层的深度为1nm以上且10nm以下。 势垒层的杂质掺杂密度为2×1018cm-3以上且1×1020cm-3以下。 通过将电流从第二电极通过层压结构传递到第一电极，在发射区域中产生光脉冲。

公开(公告)号：US08786941B2

公开(公告)日：2014-07-22

申请号：US13166900

申请日：2011-06-23

申请人： Masaru Kuramoto ,  Masao Ikeda ,  Rintaro Koda ,  Tomoyuki Oki ,  Hideki Watanabe ,  Takao Miyajima ,  Hiroyuki Yokoyama

发明人： Masaru Kuramoto ,  Masao Ikeda ,  Rintaro Koda ,  Tomoyuki Oki ,  Hideki Watanabe ,  Takao Miyajima ,  Hiroyuki Yokoyama

IPC分类号： H01S5/00

CPC分类号： H01S5/1064 ,  H01S5/0425 ,  H01S5/0602 ,  H01S5/0657 ,  H01S5/16 ,  H01S5/22 ,  H01S5/32341 ,  H01S5/34333 ,  H01S5/50

摘要： A semiconductor optical amplifier includes: a laminated structure sequentially including a first compound semiconductor layer composed of GaN compound semiconductor and having a first conductivity type, a third compound semiconductor layer having a light amplification region composed of GaN compound semiconductor, and a second compound semiconductor layer composed of GaN compound semiconductor and having a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The laminated structure has a ridge stripe structure. When widths of the ridge stripe structure in a light output end face and the ridge stripe structure in a light incident end face are respectively Wout, and Win, Wout>Win is satisfied. A carrier non-injection region is provided in an internal region of the laminated structure from the light output end face along an axis line of the semiconductor optical amplifier.

摘要翻译： 半导体光放大器包括：依次包括由GaN化合物半导体构成的第一化合物半导体并具有第一导电类型的层压结构，具有由GaN化合物半导体构成的光放大区域的第三化合物半导体层和第二化合物半导体层 由GaN化合物半导体构成并具有第二导电类型; 形成在第二化合物半导体层上的第二电极; 和与第一化合物半导体层电连接的第一电极。 层叠结构具有脊形条纹结构。 当光输出端面中的棱条结构的宽度和光入射端面中的脊条纹结构的宽度分别为Wout时，满足Win，Wout> Win。 载体非注入区域沿着半导体光放大器的轴线从光输出端面设置在层叠结构的内部区域中。

公开(公告)号：US20100246622A1

公开(公告)日：2010-09-30

申请号：US12726524

申请日：2010-03-18

申请人： Hideki Watanabe ,  Takao Miyajima ,  Masao Ikeda ,  Hiroyuki Yokoyama ,  Tomoyuki Oki ,  Masaru Kuramoto

发明人： Hideki Watanabe ,  Takao Miyajima ,  Masao Ikeda ,  Hiroyuki Yokoyama ,  Tomoyuki Oki ,  Masaru Kuramoto

IPC分类号： H01S5/323 ,  H01L21/20 ,  H01L21/28

CPC分类号： H01S5/0625 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/0602 ,  H01S5/0658 ,  H01S5/14 ,  H01S5/22 ,  H01S5/3216 ,  H01S5/34333

摘要： A method for manufacturing a bi-section semiconductor laser device includes the steps of (A) forming a stacked structure obtained by stacking, on a substrate in sequence, a first compound semiconductor layer of a first conductivity type, a compound semiconductor layer that constitutes a light-emitting region and a saturable absorption region, and a second compound semiconductor layer of a second conductivity type; (B) forming a belt-shaped second electrode on the second compound semiconductor layer; (C) forming a ridge structure by etching at least part of the second compound semiconductor layer using the second electrode as an etching mask; and (D) forming a resist layer for forming a separating groove in the second electrode and then forming the separating groove in the second electrode by wet etching so that the separating groove separates the second electrode into a first portion and a second portion.

摘要翻译： 一种制造双相半导体激光器件的方法包括以下步骤：（A）形成叠层结构，其通过在基板上依次层叠第一导电类型的第一化合物半导体层，构成第一导电类型的化合物半导体层 发光区域和可饱和吸收区域;以及第二导电类型的第二化合物半导体层; （B）在第二化合物半导体层上形成带状的第二电极; （C）通过使用所述第二电极作为蚀刻掩模蚀刻所述第二化合物半导体层的至少一部分来形成脊结构; 和（D）在第二电极中形成用于形成分隔槽的抗蚀剂层，然后通过湿蚀刻在第二电极中形成分隔槽，使得分离槽将第二电极分离成第一部分和第二部分。

公开(公告)号：US08329483B2

公开(公告)日：2012-12-11

申请号：US12726524

申请日：2010-03-18

申请人： Hideki Watanabe ,  Takao Miyajima ,  Masao Ikeda ,  Hiroyuki Yokoyama ,  Tomoyuki Oki ,  Masaru Kuramoto

发明人： Hideki Watanabe ,  Takao Miyajima ,  Masao Ikeda ,  Hiroyuki Yokoyama ,  Tomoyuki Oki ,  Masaru Kuramoto

IPC分类号： H01L21/00

CPC分类号： H01S5/0625 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/0602 ,  H01S5/0658 ,  H01S5/14 ,  H01S5/22 ,  H01S5/3216 ,  H01S5/34333

摘要： A method for manufacturing a bi-section semiconductor laser device includes the steps of (A) forming a stacked structure obtained by stacking, on a substrate in sequence, a first compound semiconductor layer of a first conductivity type, a compound semiconductor layer that constitutes a light-emitting region and a saturable absorption region, and a second compound semiconductor layer of a second conductivity type; (B) forming a belt-shaped second electrode on the second compound semiconductor layer; (C) forming a ridge structure by etching at least part of the second compound semiconductor layer using the second electrode as an etching mask; and (D) forming a resist layer for forming a separating groove in the second electrode and then forming the separating groove in the second electrode by wet etching so that the separating groove separates the second electrode into a first portion and a second portion.

摘要翻译： 一种制造双相半导体激光器件的方法包括以下步骤：（A）形成叠层结构，其通过在基板上依次层叠第一导电类型的第一化合物半导体层，构成第一导电类型的化合物半导体层 发光区域和可饱和吸收区域;以及第二导电类型的第二化合物半导体层; （B）在第二化合物半导体层上形成带状的第二电极; （C）通过使用所述第二电极作为蚀刻掩模蚀刻所述第二化合物半导体层的至少一部分来形成脊结构; 和（D）在第二电极中形成用于形成分隔槽的抗蚀剂层，然后通过湿蚀刻在第二电极中形成分隔槽，使得分离槽将第二电极分离成第一部分和第二部分。

公开(公告)号：US20120281726A1

公开(公告)日：2012-11-08

申请号：US13553380

申请日：2012-07-19

申请人： Hideki Watanabe ,  Takao Miyajima ,  Masao Ikeda ,  Hiroyuki Yokoyama ,  Tomoyuki Oki ,  Masaru Kuramoto

发明人： Hideki Watanabe ,  Takao Miyajima ,  Masao Ikeda ,  Hiroyuki Yokoyama ,  Tomoyuki Oki ,  Masaru Kuramoto

IPC分类号： H01S5/02

CPC分类号： H01S5/0625 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/0602 ,  H01S5/0658 ,  H01S5/14 ,  H01S5/22 ,  H01S5/3216 ,  H01S5/34333

摘要： A method for manufacturing a bi-section semiconductor laser device includes the steps of (A) forming a stacked structure obtained by stacking, on a substrate in sequence, a first compound semiconductor layer of a first conductivity type, a compound semiconductor layer that constitutes a light-emitting region and a saturable absorption region, and a second compound semiconductor layer of a second conductivity type; (B) forming a belt-shaped second electrode on the second compound semiconductor layer; (C) forming a ridge structure by etching at least part of the second compound semiconductor layer using the second electrode as an etching mask; and (D) forming a resist layer for forming a separating groove in the second electrode and then forming the separating groove in the second electrode by wet etching so that the separating groove separates the second electrode into a first portion and a second portion.

摘要翻译： 一种制造双相半导体激光器件的方法包括以下步骤：（A）形成叠层结构，其通过在基板上依次层叠第一导电类型的第一化合物半导体层，构成第一导电类型的化合物半导体层 发光区域和可饱和吸收区域;以及第二导电类型的第二化合物半导体层; （B）在第二化合物半导体层上形成带状的第二电极; （C）通过使用所述第二电极作为蚀刻掩模蚀刻所述第二化合物半导体层的至少一部分来形成脊结构; 和（D）在第二电极中形成用于形成分隔槽的抗蚀剂层，然后通过湿蚀刻在第二电极中形成分隔槽，使得分离槽将第二电极分离成第一部分和第二部分。

公开(公告)号：US08442079B2

公开(公告)日：2013-05-14

申请号：US13035540

申请日：2011-02-25

申请人： Tomoyuki Oki ,  Masaru Kuramoto ,  Masao Ikeda ,  Takao Miyajima ,  Hideki Watanabe ,  Hiroyuki Yokoyama

发明人： Tomoyuki Oki ,  Masaru Kuramoto ,  Masao Ikeda ,  Takao Miyajima ,  Hideki Watanabe ,  Hiroyuki Yokoyama

IPC分类号： H01S3/098

摘要： Provided is a driving method of a mode-locked semiconductor laser device comprising a laminated structure in which a first compound semiconductor layer, a third compound semiconductor layer having an emission region and a second compound semiconductor layer are successively laminated, a second electrode, and a first electrode. The laminated structure is formed on a compound semiconductor substrate having polarity, the third compound semiconductor layer includes a quantum well structure having a well layer and a barrier layer. The well layer has a depth of 1 nm or more and 10 nm or less. The barrier layer has an impurity doping density of 2×1018 cm−3 or more and 1×1020 cm−3 or less. An optical pulse is generated in the emission region by passing a current from the second electrode to the first electrode via the laminated structure.

摘要翻译： 提供了一种锁模半导体激光器件的驱动方法，其包括层叠结构，其中第一化合物半导体层，具有发射区域的第三化合物半导体层和第二化合物半导体层被连续层压，第二电极和 第一电极。 层叠结构形成在具有极性的化合物半导体基板上，第三化合物半导体层包括具有阱层和阻挡层的量子阱结构。 阱层的深度为1nm以上且10nm以下。 势垒层的杂质掺杂密度为2×1018cm-3以上且1×1020cm-3以下。 通过将电流从第二电极通过层压结构传递到第一电极，在发射区域中产生光脉冲。

公开(公告)号：US20120002271A1

公开(公告)日：2012-01-05

申请号：US13166900

申请日：2011-06-23

申请人： Masaru Kuramoto ,  Masao Ikeda ,  Rintaro Koda ,  Tomoyuki Oki ,  Hideki Watanabe ,  Takao Miyajima ,  Hiroyuki Yokoyama

发明人： Masaru Kuramoto ,  Masao Ikeda ,  Rintaro Koda ,  Tomoyuki Oki ,  Hideki Watanabe ,  Takao Miyajima ,  Hiroyuki Yokoyama

IPC分类号： H01S3/00

CPC分类号： H01S5/1064 ,  H01S5/0425 ,  H01S5/0602 ,  H01S5/0657 ,  H01S5/16 ,  H01S5/22 ,  H01S5/32341 ,  H01S5/34333 ,  H01S5/50

摘要： A semiconductor optical amplifier includes: a laminated structure sequentially including a first compound semiconductor layer composed of GaN compound semiconductor and having a first conductivity type, a third compound semiconductor layer having a light amplification region composed of GaN compound semiconductor, and a second compound semiconductor layer composed of GaN compound semiconductor and having a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The laminated structure has a ridge stripe structure. When widths of the ridge stripe structure in a light output end face and the ridge stripe structure in a light incident end face are respectively Wout, and Win, Wout>Win is satisfied. A carrier non-injection region is provided in an internal region of the laminated structure from the light output end face along an axis line of the semiconductor optical amplifier.

摘要翻译： 半导体光放大器包括：依次包括由GaN化合物半导体构成的第一化合物半导体并具有第一导电类型的层压结构，具有由GaN化合物半导体构成的光放大区域的第三化合物半导体层和第二化合物半导体层 由GaN化合物半导体构成并具有第二导电类型; 形成在第二化合物半导体层上的第二电极; 和与第一化合物半导体层电连接的第一电极。 层叠结构具有脊形条纹结构。 当光输出端面中的棱条结构的宽度和光入射端面中的脊条纹结构的宽度分别为Wout时，满足Win，Wout> Win。 载体非注入区域沿着半导体光放大器的轴线从光输出端面设置在层叠结构的内部区域中。

公开(公告)号：US08575626B2

公开(公告)日：2013-11-05

申请号：US13553380

申请日：2012-07-19

申请人： Hideki Watanabe ,  Takao Miyajima ,  Masao Ikeda ,  Hiroyuki Yokoyama ,  Tomoyuki Oki ,  Masaru Kuramoto

发明人： Hideki Watanabe ,  Takao Miyajima ,  Masao Ikeda ,  Hiroyuki Yokoyama ,  Tomoyuki Oki ,  Masaru Kuramoto

IPC分类号： H01L27/15 ,  H01L21/00

CPC分类号： H01S5/0625 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/0602 ,  H01S5/0658 ,  H01S5/14 ,  H01S5/22 ,  H01S5/3216 ,  H01S5/34333

摘要： A method for manufacturing a bi-section semiconductor laser device includes the steps of (A) forming a stacked structure obtained by stacking, on a substrate in sequence, a first compound semiconductor layer of a first conductivity type, a compound semiconductor layer that constitutes a light-emitting region and a saturable absorption region, and a second compound semiconductor layer of a second conductivity type; (B) forming a belt-shaped second electrode on the second compound semiconductor layer; (C) forming a ridge structure by etching at least part of the second compound semiconductor layer using the second electrode as an etching mask; and (D) forming a resist layer for forming a separating groove in the second electrode and then forming the separating groove in the second electrode by wet etching so that the separating groove separates the second electrode into a first portion and a second portion.

摘要翻译： 一种制造双相半导体激光器件的方法包括以下步骤：（A）形成叠层结构，其通过在基板上依次层叠第一导电类型的第一化合物半导体层，构成第一导电类型的化合物半导体层 发光区域和可饱和吸收区域;以及第二导电类型的第二化合物半导体层; （B）在第二化合物半导体层上形成带状的第二电极; （C）通过使用所述第二电极作为蚀刻掩模蚀刻所述第二化合物半导体层的至少一部分来形成脊结构; 和（D）在第二电极中形成用于形成分隔槽的抗蚀剂层，然后通过湿蚀刻在第二电极中形成分隔槽，使得分离槽将第二电极分离成第一部分和第二部分。

公开(公告)号：US20110103419A1

公开(公告)日：2011-05-05

申请号：US12910046

申请日：2010-10-22

申请人： Rintaro Koda ,  Takao Miyajima ,  Hideki Watanabe ,  Hiroyuki Yokoyama ,  Tomoyuki Oki ,  Masaru Kuramoto

发明人： Rintaro Koda ,  Takao Miyajima ,  Hideki Watanabe ,  Hiroyuki Yokoyama ,  Tomoyuki Oki ,  Masaru Kuramoto

IPC分类号： H01S5/00 ,  H01S3/02 ,  H01S3/08

CPC分类号： H01S5/50 ,  B82Y20/00 ,  H01S5/0021 ,  H01S5/005 ,  H01S5/02212 ,  H01S5/02288 ,  H01S5/028 ,  H01S5/0655 ,  H01S5/1014 ,  H01S5/1085 ,  H01S5/14 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/34333 ,  H01S5/4006

摘要： The present invention provides an optical device capable of suppressing a drive current and an optical output to be varied with a passage of the time. The optical device includes: an optical element including a first end face and a second end face, and emitting light having a wavelength from 300 nm to 600 nm both inclusive at least from the second end face in the first end face and the second end face; a pedestal including a supporting substrate supporting the optical element, and a connecting terminal electrically connected to the optical element; and a sealing section including a light transmitting window in each of a portion facing the first end face and a portion facing the second end face, and sealing the optical element.

摘要翻译： 本发明提供能够抑制驱动电流和光输出随着时间的推移而变化的光学装置。 光学装置包括：光学元件，包括第一端面和第二端面，并且至少从第一端面中的第二端面和第二端面发射波长为300nm至600nm的光， ; 包括支撑所述光学元件的支撑基板的基座和与所述光学元件电连接的连接端子; 以及密封部，其包括在面向所述第一端面的部分中的每一个中的透光窗口和面向所述第二端面的部分，并且密封所述光学元件。

公开(公告)号：US08917753B2

公开(公告)日：2014-12-23

申请号：US13163251

申请日：2011-06-17

申请人： Tomoyuki Oki ,  Rintaro Koda ,  Masaru Kuramoto ,  Takao Miyajima ,  Hiroyuki Yokoyama

发明人： Tomoyuki Oki ,  Rintaro Koda ,  Masaru Kuramoto ,  Takao Miyajima ,  Hiroyuki Yokoyama

IPC分类号： H01S5/00 ,  B82Y20/00 ,  H01S5/50 ,  H01S5/14 ,  H01S5/065 ,  H01S5/10 ,  H01S5/40 ,  H01S5/343 ,  H01S5/06 ,  H01S5/0625 ,  H01S5/028

CPC分类号： H01S5/50 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0064 ,  H01S5/0071 ,  H01S5/028 ,  H01S5/0601 ,  H01S5/0625 ,  H01S5/0657 ,  H01S5/1003 ,  H01S5/1014 ,  H01S5/141 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/34333 ,  H01S5/4006

摘要： Provided is an alignment method of a semiconductor optical amplifier with which optimization of coupling efficiency between incident laser light and light waveguide of the semiconductor optical amplifier is enabled without depending on an external monitoring device. The alignment method of a semiconductor optical amplifier is a method that optically amplifies laser light from a laser light source and outputs the optically amplified laser light, which adjusts relative position of the semiconductor optical amplifier with respect to the laser light entering into the semiconductor optical amplifier by flowing a given value of current to the semiconductor optical amplifier while entering the laser light from the laser light source to the semiconductor optical amplifier so that a voltage applied to the semiconductor optical amplifier becomes the maximum.

摘要翻译： 提供了一种半导体光放大器的对准方法，其能够使得半导体光放大器的入射激光与光波导之间的耦合效率优化，而不依赖于外部监视装置。 半导体光放大器的对准方法是光学地放大来自激光源的激光的方法，并输出光放大激光，该激光调整半导体光放大器相对于进入半导体光放大器的激光的相对位置 通过在从激光源向半导体光放大器进入激光的同时将给定的电流值流向半导体光放大器，使得施加到半导体光放大器的电压变为最大。