公开(公告)号：US11087812B1

公开(公告)日：2021-08-10

申请号：US16931438

申请日：2020-07-16

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Hui Lee ,  I-Ming Tseng ,  Chiu-Jung Chiu ,  Chung-Liang Chu ,  Yu-Chun Chen ,  Ya-Sheng Feng ,  Yi-An Shih ,  Hsiu-Hao Hu ,  Yu-Ping Wang

IPC: G11C16/08 ,  G11C11/16

Abstract: A MRAM includes a plurality of memory cells, an operation unit, a voltage generator, and an input/output circuit. The operation unit includes multiple groups of memory cells among the plurality of memory cells. The voltage generator is configured to provide a plurality of control signals by voltage-dividing a voltage control signal and selectively output the plurality of control signals to the input/output circuit. The input/output circuit is configured to output a plurality of switching pulse signals to the multiple groups of memory cells according to the plurality of control signals, wherein each switching pulse signal differs in pulse width or level.

公开(公告)号：US11050017B2

公开(公告)日：2021-06-29

申请号：US16850003

申请日：2020-04-16

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Chun Chen ,  Ya-Sheng Feng ,  Chiu-Jung Chiu ,  Hung-Chan Lin

IPC: H01L43/02 ,  H01L23/535 ,  H01L43/12 ,  H01L27/22 ,  H01L43/10 ,  G11C11/16

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the MTJ, and a second spacer on another side of the MTJ, in which the first spacer and the second spacer are asymmetric. Specifically, the MTJ further includes a first bottom electrode disposed on a metal interconnection, a capping layer on the bottom electrode, and a top electrode on the capping layer, in which a top surface of the first spacer is even with a top surface of the top electrode and a top surface of the second spacer is lower than the top surface of the top electrode and higher than the top surface of the capping layer.

公开(公告)号：US10529920B1

公开(公告)日：2020-01-07

申请号：US16056551

申请日：2018-08-07

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ya-Sheng Feng ,  Hung-Chan Lin ,  Yu-Ping Wang ,  Yu-Chun Chen ,  Chiu-Jung Chiu

IPC: H01L45/00 ,  H01L43/12 ,  H01L43/02 ,  H01L27/22

Abstract: A method for fabricating semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a magnetic tunneling junction (MTJ) on the first IMD layer; forming a liner on the MTJ and the first IMD layer; removing part of the liner to form a spacer adjacent to the MTJ; and forming a second IMD layer on the first IMD layer.

公开(公告)号：US20180182900A1

公开(公告)日：2018-06-28

申请号：US15437740

申请日：2017-02-21

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ya-Sheng Feng ,  Chi-Cheng Huang ,  Ping-Chia Shih ,  Hung-Wei Lin ,  Yu-Chun Chen ,  Ling-Hsiu Chou ,  An-Hsiu Cheng

IPC: H01L29/792 ,  H01L29/66 ,  H01L29/423

CPC classification number: H01L29/792 ,  H01L21/823462 ,  H01L29/4234 ,  H01L29/42368 ,  H01L29/66833

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a semiconductor substrate having a tunneling well, a tunneling oxide layer, a charge storage layer and a control gate. The tunneling oxide layer is disposed on the tunneling well. The tunneling oxide layer includes a first tunneling oxide segment having a first thickness, a second tunneling oxide segment having a second thickness, and a third tunneling oxide segment having a third thickness, and the first thickness, the second thickness and the third thickness are different from each other. The charge storage layer is disposed on the tunneling oxide layer, and the control gate is disposed on the charge storage layer.

公开(公告)号：US20240357943A1

公开(公告)日：2024-10-24

申请号：US18760005

申请日：2024-06-30

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chiu-Jung Chiu ,  Ya-Sheng Feng ,  I-Ming Tseng ,  Yi-An Shih ,  Yu-Chun Chen ,  Yi-Hui Lee ,  Chung-Liang Chu ,  Hsiu-Hao Hu

IPC: H10N50/80 ,  H10B61/00 ,  H10N50/01 ,  H10N50/85

CPC classification number: H10N50/80 ,  H10B61/00 ,  H10N50/01 ,  H10N50/85

Abstract: A method for fabricating semiconductor device includes the steps of forming an inter-metal dielectric (IMD) layer on a substrate, forming a trench in the IMD layer, forming a synthetic antiferromagnetic (SAF) layer in the trench, forming a metal layer on the SAF layer, planarizing the metal layer and the SAF layer to form a metal interconnection, and forming a magnetic tunneling junction (MTJ) on the metal interconnection.

公开(公告)号：US20220029087A1

公开(公告)日：2022-01-27

申请号：US16997922

申请日：2020-08-19

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Chun Chen ,  Yen-Chun Liu ,  Ya-Sheng Feng ,  Chiu-Jung Chiu ,  I-Ming Tseng ,  Yi-An Shih ,  Yi-Hui Lee ,  Chung-Liang Chu ,  Hsiu-Hao Hu

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/12

Abstract: A semiconductor device includes a substrate having a magnetic random access memory (MRAM) region and a logic region, a first metal interconnection on the MRAM region, a second metal interconnection on the logic region, a stop layer extending from the first metal interconnection to the second metal interconnection, and a magnetic tunneling junction (MTJ) on the first metal interconnection. Preferably, the stop layer on the first metal interconnection and the stop layer on the second metal interconnection have different thicknesses.

公开(公告)号：US20200243753A1

公开(公告)日：2020-07-30

申请号：US16850003

申请日：2020-04-16

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Chun Chen ,  Ya-Sheng Feng ,  Chiu-Jung Chiu ,  Hung-Chan Lin

IPC: H01L43/02 ,  H01L23/535 ,  H01L27/22 ,  H01L43/12 ,  G11C11/16 ,  H01L43/10

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the MTJ, and a second spacer on another side of the MTJ, in which the first spacer and the second spacer are asymmetric. Specifically, the MTJ further includes a first bottom electrode disposed on a metal interconnection, a capping layer on the bottom electrode, and a top electrode on the capping layer, in which a top surface of the first spacer is even with a top surface of the top electrode and a top surface of the second spacer is lower than the top surface of the top electrode and higher than the top surface of the capping layer.

公开(公告)号：US20200075840A1

公开(公告)日：2020-03-05

申请号：US16148852

申请日：2018-10-01

Applicant: United Microelectronics Corp.

Inventor： Ya-Sheng Feng ,  Yu-Chun Chen ,  Chiu-Jung Chiu ,  Hung-Chan Lin

IPC: H01L43/02 ,  G11C11/16 ,  H01F10/32 ,  H01L23/528 ,  H01L23/522 ,  H01L23/532 ,  H01L43/12 ,  H01L27/22 ,  H01F41/34

Abstract: A magnetoresistive memory cell is provided including a substrate. An inter-layer dielectric layer is disposed on the substrate. A via structure is disposed in the inter-layer dielectric layer. A magnetic pinned layer is disposed on the via structure. A tunnel barrier layer is disposed on the magnetic pinned layer to cover a top and a sidewall of the magnetic pinned layer, wherein the tunnel barrier layer comprises a horizontal extending portion outward from a bottom of the sidewall. A magnetic free layer with a -like structure is disposed on the tunnel barrier layer, wherein the magnetic free layer is isolated from the magnetic pinned layer by the tunnel bather layer. A spacer is disposed on the sidewall of the magnetic free layer. The spacer extends to the inter-layer dielectric layer.

公开(公告)号：US10008615B1

公开(公告)日：2018-06-26

申请号：US15437740

申请日：2017-02-21

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ya-Sheng Feng ,  Chi-Cheng Huang ,  Ping-Chia Shih ,  Hung-Wei Lin ,  Yu-Chun Chen ,  Ling-Hsiu Chou ,  An-Hsiu Cheng

IPC: H01L29/423 ,  H01L29/792 ,  H01L29/66 ,  H01L21/8234

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a semiconductor substrate having a tunneling well, a tunneling oxide layer, a charge storage layer and a control gate. The tunneling oxide layer is disposed on the tunneling well. The tunneling oxide layer includes a first tunneling oxide segment having a first thickness, a second tunneling oxide segment having a second thickness, and a third tunneling oxide segment having a third thickness, and the first thickness, the second thickness and the third thickness are different from each other. The charge storage layer is disposed on the tunneling oxide layer, and the control gate is disposed on the charge storage layer.

公开(公告)号：US20170194511A1

公开(公告)日：2017-07-06

申请号：US15007280

申请日：2016-01-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Chun Chen ,  Chun-Hung Cheng ,  Yu-Chieh Lin ,  Ya-Sheng Feng ,  Ping-Chia Shih ,  Ling-Hsiu Chou

IPC: H01L29/792 ,  H01L29/66

CPC classification number: H01L29/792 ,  H01L29/6656 ,  H01L29/66833

Abstract: A non-volatile memory (NVM) device includes a substrate, a charge trapping structure, a first gate electrode and a spacer. The charge trapping structure is disposed on the substrate. The first gate electrode is disposed on the charge trapping structure. The spacer is disposed on at least one sidewall of the first gate electrode and the charge trapping structure. Wherein, the charge trapping structure has a lateral size substantially greater than that of the first gate electrode.