公开(公告)号：US20130207075A1

公开(公告)日：2013-08-15

申请号：US13819006

申请日：2011-08-25

申请人： Roberto C. Myers ,  Siddharth Rajan

发明人： Roberto C. Myers ,  Siddharth Rajan

IPC分类号： H01L33/04

CPC分类号： H01L33/04 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  H01L21/02458 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02603 ,  H01L21/02636 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/122 ,  H01L29/15 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66469 ,  H01L29/775 ,  H01L29/861 ,  H01L31/035227 ,  H01L31/03529 ,  H01L31/065 ,  H01L31/109 ,  H01L31/1848 ,  H01L31/1852 ,  H01L33/08 ,  H01L33/18 ,  H01L33/32 ,  H01L2924/0002 ,  Y02E10/544 ,  H01L2924/00

摘要： A nanowire comprises a polar semiconductor material that is compositionally graded along the nanowire from a first end to a second end to define a polarization doping profile along the nanowire from the first end to the second end. The polar semiconductor material may comprise a group IH-nitride semiconductor, such as an alloy of GaN and AlN, or an alloy of GaN and InN. Such nanowires may be formed by nucleating the first ends on a substrate, growing the nanowires by depositing polar semiconductor material on the nucleated first ends on a selected growth face, and compositionally grading the nanowires during growth to impart the polarization doping. The direction of the compositional grading may be reversed during the growing of the nanowires to reverse the type of the imparted polarization doping. In some embodiments, the reversing forms n/p or p/n junctions in the nanowires.

摘要翻译： 纳米线包括从第一端到第二端在纳米线上组成分级的极性半导体材料，以限定沿着纳米线从第一端到第二端的偏振掺杂分布。 极性半导体材料可以包括诸如GaN和AlN的合金或GaN和InN的合金的III族氮化物半导体。 这样的纳米线可以通过在基底上成核第一端而形成，通过在选择的生长面上的有核的第一端上沉积极性半导体材料来生长纳米线，并且在生长期间组合地对纳米线进行分级以赋予偏振掺杂。 在纳米线的生长期间，组成分级的方向可以相反，以反转所赋予的偏振掺杂的类型。 在一些实施方案中，反转在纳米线中形成n / p或p / n结。

公开(公告)号：US07948011B2

公开(公告)日：2011-05-24

申请号：US11523286

申请日：2006-09-18

申请人： Siddharth Rajan ,  Chang Soo Suh ,  James S. Speck ,  Umesh K. Mishra

发明人： Siddharth Rajan ,  Chang Soo Suh ,  James S. Speck ,  Umesh K. Mishra

IPC分类号： H01L29/66

CPC分类号： H01L29/045 ,  H01L29/2003 ,  H01L29/432 ,  H01L29/7781 ,  H01L29/7783 ,  H01L29/7784

摘要： A novel enhancement mode field effect transistor (FET), such as a High Electron Mobility Transistors (HEMT), has an N-polar surface uses polarization fields to reduce the electron population under the gate in the N-polar orientation, has improved dispersion suppression, and low gate leakage.

摘要翻译： 一种新型的增强型场效应晶体管（FET），例如高电子迁移率晶体管（HEMT），具有N-极性表面，利用极化场来减小N极方向栅极下的电子群，改善色散抑制 ，低栅极泄漏。

公开(公告)号：US20090085065A1

公开(公告)日：2009-04-02

申请号：US12059907

申请日：2008-03-31

申请人： Umesh K. Mishra ,  Lee S. McCarthy ,  Chang Soo Suh ,  Siddharth Rajan

发明人： Umesh K. Mishra ,  Lee S. McCarthy ,  Chang Soo Suh ,  Siddharth Rajan

IPC分类号： H01L29/778 ,  H01L21/18 ,  H01L21/20

CPC分类号： H01L29/66462 ,  H01L21/187 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/7783

摘要： A method for fabricating III-N semiconductor devices on the N-face of layers comprising (a) growing a III-nitride semiconductor device structure in a Ga-polar direction on a substrate, (b) attaching a Ga face of the III-nitride semiconductor device structure to a host substrate, and (c) removing the substrate to expose the N-face surface of the III-nitride semiconductor device structure. An N-polar (000-1) oriented III-nitride semiconductor device is also disclosed, comprising one or more (000-1) oriented nitride layers, each having an N-face opposite a group III-face, wherein at least one N-face is an at least partially exposed N-face, and a host substrate attached to one of the group III-faces.

摘要翻译： 一种用于在层的N面上制造III-N半导体器件的方法，包括（a）在衬底上生长Ga极性方向上的III族氮化物半导体器件结构，（b）将III族氮化物的Ga面 半导体器件结构，以及（c）去除衬底以露出III族氮化物半导体器件结构的N面。 还公开了一种N极（000-1）取向的III族氮化物半导体器件，其包括一个或多个（000-1）取向的氮化物层，每个具有与III族面相反的N面，其中至少一个N 表面是至少部分暴露的N面，以及附着到III组面中的一个的主体衬底。

公开(公告)号：US20060231860A1

公开(公告)日：2006-10-19

申请号：US11241804

申请日：2005-09-29

申请人： Umesh Mishra ,  Huili Xing ,  Debdeep Jena ,  Siddharth Rajan

发明人： Umesh Mishra ,  Huili Xing ,  Debdeep Jena ,  Siddharth Rajan

IPC分类号： H01L31/00

CPC分类号： H01L29/812 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/7783 ,  H01L29/7787

摘要： Novel GaN/AlGaN metal-semiconductor field-effect transistor (MESFET) structures grown without any impurity doping in the channel. A high-mobility polarization-induced bulk channel charge is created by grading the channel region linearly from GaN to Al0.3Ga0.7N over a distance, e.g., 1000 Å. A polarization-doped field effect transistor (PolFET) was fabricated and tested under DC and RF conditions. A current density of 850 mA/mm and transconductance of 93 mS/mm was observed under DC conditions. Small-signal characterization of 0.7 μm gate length devices had a cutoff frequency, ƒτ=19 GHz, and a maximum oscillation of ƒmax=46 GHz. The PolFETs perform better than comparable MESFETs with impurity-doped channels, and are suitable for high microwave power applications. An important advantage of these devices over AlGaN/GaN HEMTs is that the transconductance vs. gate voltage profile can be tailored by compositional grading for better large-signal linearity.

摘要翻译： 新型GaN / AlGaN金属半导体场效应晶体管（MESFET）结构在通道中没有任何杂质掺杂生长。 高迁移率极化诱导的体通道电荷是通过使沟道区域在一定距离（例如）1000处从GaN线性地分级至Al 0.3 N 0.7 N N N而产生的。 在DC和RF条件下制造和测试偏振掺杂场效应晶体管（PolFET）。 在直流条件下观察到电流密度为850mA / mm，跨导为93mS / mm。 0.7μm门极长度器件的小信号表征具有截止频率f T T T = 19GHz，f max max = 46GHz的最大振荡。 PolFET比具有杂质掺杂通道的可比MESFET性能更好，适用于高微波功率应用。 这些器件对AlGaN / GaN HEMT的一个重要优点是跨导与栅极电压分布可以通过组合分级来定制，以获得更好的大信号线性度。