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公开(公告)号：US09368676B2
公开(公告)日：2016-06-14
申请号：US14463142
申请日：2014-08-19
申请人： Roberto C. Myers , Thomas F. Kent
发明人： Roberto C. Myers , Thomas F. Kent
摘要： A diode comprises nanowires compositionally graded along their lengths with an active region doped with gadolinium sandwiched between first and second compositionally graded AlxGa1-xN nanowire regions. The first graded AlxGa1-xN nanowire region is graded from gallium-rich to aluminum-rich with the compositional grading defining n-type polarization doping and the aluminum-rich end proximate the active region. The second graded AlxGa1-xN nanowire region is graded from aluminum-rich to gallium-rich with the compositional grading defining p-type polarization doping and with the aluminum rich end proximate the active region. The active region may include a GdN layer sandwiched between AlN layers, or an Al1-yGdyN layer with y≧0.5. The nanowires may be disposed on a silicon substrate having a GaN surface, with the gallium-rich end of the first graded AlxGa1-xN nanowire region proximate to the GaN surface, and a semitransparent electrical contact disposed on the gallium-rich end of the second graded AlxGa1-xN nanowire region.
摘要翻译： 二极管包括沿其长度成分地分级的纳米线，其中掺杂有夹在第一和第二组成梯度的Al x Ga 1-x N纳米线区域之间的钆的有源区。 第一级AlxGa1-xN纳米线区域从富镓到富铝分级，具有定义n型偏振掺杂的组成分级和靠近有源区的富铝端。 第二级AlxGa1-xN纳米线区域从富铝到富镓分级，具有定义p型偏振掺杂的组成分级和富铝端靠近有源区。 有源区可以包括夹在AlN层之间的GdN层，或者y≥0.5的Al1-yGdyN层。 纳米线可以设置在具有GaN表面的硅衬底上，第一梯度Al x Ga 1-x N纳米线区域的富镓端靠近GaN表面，并且半透明电接触设置在第二层的富镓端 分级的Al x Ga 1-x N纳米线区域。
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公开(公告)号：US20150048306A1
公开(公告)日：2015-02-19
申请号：US14463142
申请日：2014-08-19
申请人： Roberto C. Myers , Thomas F. Kent
发明人： Roberto C. Myers , Thomas F. Kent
摘要： A diode comprises nanowires compositionally graded along their lengths with an active region doped with gadolinium sandwiched between first and second compositionally graded AlxGa1-xN nanowire regions. The first graded AlxGa1-xN nanowire region is graded from gallium-rich to aluminum-rich with the compositional grading defining n-type polarization doping and the aluminum-rich end proximate the active region. The second graded AlxGa1-xN nanowire region is graded from aluminum-rich to gallium-rich with the compositional grading defining p-type polarization doping and with the aluminum rich end proximate the active region. The active region may include a GdN layer sandwiched between AlN layers, or an Al1-yGdyN layer with y≧0.5. The nanowires may be disposed on a silicon substrate having a GaN surface, with the gallium-rich end of the first graded AlxGa1-xN nanowire region proximate to the GaN surface, and a semitransparent electrical contact disposed on the gallium-rich end of the second graded AlxGa1-xN nanowire region.
摘要翻译： 二极管包括沿其长度成分地分级的纳米线，其中掺杂有夹在第一和第二组成梯度的Al x Ga 1-x N纳米线区域之间的钆的有源区。 第一级AlxGa1-xN纳米线区域从富镓到富铝分级，具有定义n型偏振掺杂的组成分级和靠近有源区的富铝端。 第二级AlxGa1-xN纳米线区域从富铝到富镓分级，具有定义p型偏振掺杂的组成分级和富铝端靠近有源区。 有源区可以包括夹在AlN层之间的GdN层，或者y≥0.5的Al1-yGdyN层。 纳米线可以设置在具有GaN表面的硅衬底上，第一梯度Al x Ga 1-x N纳米线区域的富镓端靠近GaN表面，并且半透明电接触设置在第二层的富镓端 分级的Al x Ga 1-x N纳米线区域。
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公开(公告)号：US09478699B2
公开(公告)日：2016-10-25
申请号：US13819006
申请日：2011-08-25
申请人： Roberto C. Myers , Siddharth Rajan
发明人： Roberto C. Myers , Siddharth Rajan
IPC分类号： H01L33/04 , B82Y10/00 , B82Y30/00 , H01L21/02 , H01L29/06 , H01L29/12 , H01L29/15 , H01L29/205 , H01L29/66 , H01L29/775 , H01L29/861 , H01L31/0352 , H01L31/065 , H01L31/109 , H01L31/18 , H01L33/18 , H01L29/20 , H01L33/08 , H01L33/32 , B82Y20/00
CPC分类号： H01L33/04 , B82Y10/00 , B82Y20/00 , B82Y30/00 , H01L21/02458 , H01L21/0251 , H01L21/0254 , H01L21/02573 , H01L21/02603 , H01L21/02636 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/122 , H01L29/15 , H01L29/2003 , H01L29/205 , H01L29/66469 , H01L29/775 , H01L29/861 , H01L31/035227 , H01L31/03529 , H01L31/065 , H01L31/109 , H01L31/1848 , H01L31/1852 , H01L33/08 , H01L33/18 , H01L33/32 , H01L2924/0002 , Y02E10/544 , H01L2924/00
摘要： A nanowire comprises a polar semiconductor material that is compositionally graded along the nanowire from a first end to a second end to define a polarization doping profile along the nanowire from the first end to the second end. The polar semiconductor material may comprise a group IH-nitride semiconductor, such as an alloy of GaN and AlN, or an alloy of GaN and InN. Such nanowires may be formed by nucleating the first ends on a substrate, growing the nanowires by depositing polar semiconductor material on the nucleated first ends on a selected growth face, and compositionally grading the nanowires during growth to impart the polarization doping. The direction of the compositional grading may be reversed during the growing of the nanowires to reverse the type of the imparted polarization doping. In some embodiments, the reversing forms n/p or p/n junctions in the nanowires.
摘要翻译： 纳米线包括从第一端到第二端在纳米线上组成分级的极性半导体材料，以限定沿着纳米线从第一端到第二端的偏振掺杂分布。 极性半导体材料可以包括诸如GaN和AlN的合金或GaN和InN的合金的III族氮化物半导体。 这样的纳米线可以通过在基底上成核第一端而形成，通过在选择的生长面上的有核的第一端上沉积极性半导体材料来生长纳米线，并且在生长期间组合地对纳米线进行分级以赋予偏振掺杂。 在纳米线的生长期间，组成分级的方向可以相反，以反转所赋予的偏振掺杂的类型。 在一些实施方案中，反转在纳米线中形成n / p或p / n结。
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公开(公告)号：US20130207075A1
公开(公告)日：2013-08-15
申请号：US13819006
申请日：2011-08-25
申请人： Roberto C. Myers , Siddharth Rajan
发明人： Roberto C. Myers , Siddharth Rajan
IPC分类号： H01L33/04
CPC分类号： H01L33/04 , B82Y10/00 , B82Y20/00 , B82Y30/00 , H01L21/02458 , H01L21/0251 , H01L21/0254 , H01L21/02573 , H01L21/02603 , H01L21/02636 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/122 , H01L29/15 , H01L29/2003 , H01L29/205 , H01L29/66469 , H01L29/775 , H01L29/861 , H01L31/035227 , H01L31/03529 , H01L31/065 , H01L31/109 , H01L31/1848 , H01L31/1852 , H01L33/08 , H01L33/18 , H01L33/32 , H01L2924/0002 , Y02E10/544 , H01L2924/00
摘要： A nanowire comprises a polar semiconductor material that is compositionally graded along the nanowire from a first end to a second end to define a polarization doping profile along the nanowire from the first end to the second end. The polar semiconductor material may comprise a group IH-nitride semiconductor, such as an alloy of GaN and AlN, or an alloy of GaN and InN. Such nanowires may be formed by nucleating the first ends on a substrate, growing the nanowires by depositing polar semiconductor material on the nucleated first ends on a selected growth face, and compositionally grading the nanowires during growth to impart the polarization doping. The direction of the compositional grading may be reversed during the growing of the nanowires to reverse the type of the imparted polarization doping. In some embodiments, the reversing forms n/p or p/n junctions in the nanowires.
摘要翻译： 纳米线包括从第一端到第二端在纳米线上组成分级的极性半导体材料，以限定沿着纳米线从第一端到第二端的偏振掺杂分布。 极性半导体材料可以包括诸如GaN和AlN的合金或GaN和InN的合金的III族氮化物半导体。 这样的纳米线可以通过在基底上成核第一端而形成，通过在选择的生长面上的有核的第一端上沉积极性半导体材料来生长纳米线，并且在生长期间组合地对纳米线进行分级以赋予偏振掺杂。 在纳米线的生长期间，组成分级的方向可以相反，以反转所赋予的偏振掺杂的类型。 在一些实施方案中，反转在纳米线中形成n / p或p / n结。
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