Process for the fluorination of boron hydrides
    11.
    发明申请
    Process for the fluorination of boron hydrides 失效
    硼氢化合物氟化处理

    公开(公告)号:US20080138269A1

    公开(公告)日:2008-06-12

    申请号:US11634735

    申请日:2006-12-06

    IPC分类号: C01B35/06 C07F5/02

    CPC分类号: C07F5/022 C07F5/00

    摘要: A process for fluorination of borohydride salts including providing a reaction medium comprising HF and a superacid. A borohydride salt compound is added to the reaction medium. The borohydride salt is reacted with the with the reaction medium under conditions to form a fluorinated borohydride salt. In addition, reactor vessels may be provided for reacting the HF, superacid additive and borohydride that are fabricated from materials resistant to superacid compositions.

    摘要翻译: 一种用于氟化硼氢化物盐的方法,包括提供包含HF和超强酸的反应介质。 向反应介质中加入硼氢化物盐化合物。 硼氢化物盐与反应介质在条件下反应形成氟化硼氢化物盐。 此外,可以提供反应器容器用于使由超耐酸组合物耐受的材料制成的HF,超强酸添加剂和硼氢化物反应。

    Group 4 metal precursors for metal-containing films
    12.
    发明授权
    Group 4 metal precursors for metal-containing films 有权
    用于含金属膜的第4族金属前体

    公开(公告)号:US08952188B2

    公开(公告)日:2015-02-10

    申请号:US12904421

    申请日:2010-10-14

    摘要: The present invention is related to a family of Group 4 metal precursors represented by the formula: M(OR1)2(R2C(O)C(R3)C(O)OR1)2 wherein M is a Group 4 metals of Ti, Zr, or Hf; wherein R1 is selected from the group consisting of a linear or branched C1-10 alkyl and a C6-12 aryl, preferably methyl, ethyl or n-propyl; R2 is selected from the group consisting of branched C3-10 alkyls, preferably iso-propyl, tert-butyl, sec-butyl, iso-butyl, or tert-amyl and a C6-12 aryl; R3 is selected from the group consisting of hydrogen, C1-10 alkyls, and a C6-12 aryl, preferably hydrogen. In a preferred embodiment of this invention, the precursor is a liquid or a solid with a melting point below 60° C.

    摘要翻译: 本发明涉及由下式表示的第4族金属前体:M(OR1)2(R2C(O)C(R3)C(O)OR1)2,其中M是Ti,Zr的第4族金属 ,或Hf; 其中R 1选自直链或支链C 1-10烷基和C 6-12芳基,优选甲基,乙基或正丙基; R2选自支链C 3-10烷基,优选异丙基,叔丁基,仲丁基,异丁基或叔戊基和C 6-12芳基; R 3选自氢,C 1-10烷基和C 6-12芳基,优选氢。 在本发明的优选实施方案中,前体是熔点低于60℃的液体或固体。

    Group IV metal complexes for metal-containing film deposition
    14.
    发明授权
    Group IV metal complexes for metal-containing film deposition 有权
    用于含金属膜沉积的IV族金属络合物

    公开(公告)号:US08691710B2

    公开(公告)日:2014-04-08

    申请号:US13362077

    申请日:2012-01-31

    IPC分类号: C07D207/46 H01L21/70

    摘要: Metal-containing complexes with general formula (1) (R1nPyr)(R2nPyr)ML1L2; or (2) [(R8XR9)(R1nPyr)(R2nPyr)]ML1L2 are disclosed; wherein M is a Group IV metal, Pyr is pyrrolyl ligand, n=1, 2 and 3, L1 and L2 are independently selected from alkoxide, amide or alkyl, L1 and L2 can be linked together, R1 and R2 can be same or different organic groups substituted at 2,3,4-positions of the pyrrole ring and are selected from the group consisting of linear and branched C1-6 alkyls, R8 and R9 are independently selected from the linear or branched chain alkylene group having 2-6 carbon atoms, and X is CH2 or oxygen. Methods of using the metal complexes as precursors to deposit metal or metal oxide films used for various devices in semi-conductor industries are also discussed.

    摘要翻译: 含有通式(1)(R1nPyr)(R2nPyr)的金属络合物ML1L2; 或(2)[(R8XR9)(R1nPyr)(R2nPyr)] ML1L2; 其中M是第IV族金属,Pyr是吡咯基配体,n = 1,2和3,L1和L2独立地选自烷氧基,酰胺或烷基,L1和L2可以连接在一起,R1和R2可以相同或不同 在吡咯环的2,3,4位被取代的有机基团,并且选自直链和支链C 1-6烷基,R 8和R 9独立地选自具有2-6个碳原子的直链或支链亚烷基 原子,X是CH 2或氧。 还讨论了使用金属络合物作为前体沉积用于半导体工业中各种器件的金属或金属氧化物膜的方法。

    Copper complexes for nCO and olefin adsorption

    公开(公告)号:US6114266A

    公开(公告)日:2000-09-05

    申请号:US300607

    申请日:1999-04-27

    CPC分类号: B01J20/22 B01D53/02

    摘要: A solid state composition is provided having the formula Cu(A).sub.n Z, where A is CO or olefin, n>1 and Z is a unitary or composite monovalent anion. Further provided are an apparatus adapted to adsorb and a method for adsorbing an adsorbate A from a fluid mixture. The apparatus and method employ an adsorbent having the formula Cu(A), Z, where A is CO or olefin, n>0 and Z is a unitary or composite monovalent anion. Z can be selected from the group consisting of: a) X.sup.- where X.sup.- is BF.sub.4.sup.-,PF.sub.6.sup.- or SbF.sub.6.sup.- ; b) (Al.sub.x (OR).sub.y).sup.- where R is fluoroalkyl or perfluoroalkyl, and x is 0 and y is 1, or x is 1 and y is 4; c) (RCO.sub.2).sup.- where R is alkyl, fluoroalkyl, perfluoroalkyl, aryl, fluoroaryl or perfluoroaryl; d) (RSO.sub.3).sup.- where R is alkyl, fluoroalkyl, perfluoroalkyl, aryl, fluoroaryl or perfluoroaryl; e) (H(RCO.sub.2).sub.2).sup.- where R is alkyl, fluoroalkyl, perfluoroalkyl, aryl, fluoroaryl or perfluoroaryl; f) (H(RSO.sub.3).sub.2).sup.- where R is alkyl, fluoroalkyl, perfluoroalkyl, aryl, fluoroaryl or perfluoroaryl; g) (N(SO.sub.2 R).sub.x R'.sub.y).sup.- where R is fluoroalkyl, perfluoroalkyl, aryl, fluoroaryl or perfluoroaryl, R' is alkyl, fluoroalkyl, perfluoroalkyl, aryl, fluoroaryl or perfluoroaryl, x+y=2 and x=1 or 2; h) (C(SO.sub.2 R.sub.x R'.sub.y).sup.- where R is fluoroalkyl, perfluoroalkyl, aryl, fluoroaryl or perfluoroaryl, R' is hydrogen, alkyl, fluoroalkyl, perfluoroalkyl , aryl, fluoroaryl or perfluoroaryl, x+y=3 and x=1, 2 or 3; i) (CB.sub.11 H.sub.12-m X.sub.m).sup.- where m is from 0 to 12, and X is at least one member selected from the group consisting of halogen, alkyl, fluoroalkyl, perfluoroalkyl, aryl, fluoroaryl and perfluoroaryl; j) (CB.sub.9 H.sub.10-m X.sub.m).sup.- where m is from 0 to 10, and X is at least one member selected from the group consisting of halogen, alkyl, fluoroalkyl, perfluoroalkyl, aryl, fluoroaryl and perfluoroaryl; and k) (CB.sub.11 F.sub.11 R).sup.- where R is alkyl, fluoroalkyl, perfluoroalkyl, aryl, fluoroaryl, perfluoroaryl or ammonium.

    Group IV Metal Complexes For Metal-Containing Film Deposition
    18.
    发明申请
    Group IV Metal Complexes For Metal-Containing Film Deposition 有权
    用于含金属膜沉积的IV族金属络合物

    公开(公告)号:US20130030191A1

    公开(公告)日:2013-01-31

    申请号:US13362077

    申请日:2012-01-31

    IPC分类号: C07F7/00 C23C16/22 C07F7/28

    摘要: Metal-containing complexes with general formula (1) (R1nPyr)(R2nPyr)ML1L2; or (2) [(R8XR9)(R1nPyr)(R2nPyr)]ML1L2 are disclosed; wherein M is a Group IV metal, Pyr is pyrrolyl ligand, n=1, 2 and 3, L1 and L2 are independently selected from alkoxide, amide or alkyl, L1 and L2 can be linked together, R1 and R2 can be same or different organic groups substituted at 2,3,4-positions of the pyrrole ring and are selected from the group consisting of linear and branched C1-6 alkyls, Wand R9 are independently selected from the linear or branched chain alkylene group having 2-6 carbon atoms, and X is CH2 or oxygen. Methods of using the metal complexes as precursors to deposit metal or metal oxide films used for various devices in semi-conductor industries are also discussed.

    摘要翻译: 含有通式(1)(R1nPyr)(R2nPyr)的金属络合物ML1L2; 或(2)[(R8XR9)(R1nPyr)(R2nPyr)] ML1L2; 其中M是第IV族金属,Pyr是吡咯基配体,n = 1,2和3,L1和L2独立地选自烷氧基,酰胺或烷基,L1和L2可以连接在一起,R1和R2可以相同或不同 在吡咯环的2,3,4位被取代的有机基团,并且选自直链和支链C 1-6烷基,W 9和R 9独立地选自具有2-6个碳原子的直链或支链亚烷基 ,X为CH 2或氧。 还讨论了使用金属络合物作为前体沉积用于半导体工业中各种器件的金属或金属氧化物膜的方法。

    Amidate Precursors For Depositing Metal Containing Films
    19.
    发明申请
    Amidate Precursors For Depositing Metal Containing Films 有权
    用于沉积含金属膜的酰胺前体

    公开(公告)号:US20120045589A1

    公开(公告)日:2012-02-23

    申请号:US13030227

    申请日:2011-02-18

    摘要: Volatile metal amidate metal complexes are exemplified by bis(N-(tert-butyl)ethylamidate)bis(ethylmethylamido) titanium; (N-(tert-butyl)(tert-butyl)amidate)tris(ethylmethylamido) titanium; bis(N-(tert-butyl)(tert-butyl)amidate)bis(dimethylamido) titanium and (N-(tert-butyl)(tert-butyl)amidate)tris(dimethylamido) titanium. The term “volatile” referes to any precursor of this invention having vapor pressure above 0.5 torr at temperature less than 200° C. Metal-containing film depositions using these metal amidate ligands are also described.

    摘要翻译: 挥发性金属酰胺化物金属络合物的实例是双(N-(叔丁基)乙基氨基乙酸酯)双(乙基甲基氨基)钛; (N-(叔丁基)(叔丁基)酰胺酯)三(乙基甲基氨基)钛; 双(N-(叔丁基)(叔丁基)酰胺酯)双(二甲基氨基)钛和(N-(叔丁基)(叔丁基)酰胺酯)三(二甲基氨基)钛。 术语“挥发性”适用于在低于200℃的温度下蒸气压高于0.5托的本发明任何前体。还描述了使用这些金属酰胺化物配体的含金属膜沉积。

    GROUP 4 METAL PRECURSORS FOR METAL-CONTAINING FILMS
    20.
    发明申请
    GROUP 4 METAL PRECURSORS FOR METAL-CONTAINING FILMS 有权
    第4组金属前驱物用于含金属膜

    公开(公告)号:US20110250126A1

    公开(公告)日:2011-10-13

    申请号:US12904421

    申请日:2010-10-14

    IPC分类号: C07F7/00 C01G23/047 C07F7/28

    摘要: The present invention is related to a family of Group 4 metal precursors represented by the formula: M(OR1)2(R2C(O)C(R3)C(O)OR1)2 wherein M is a Group 4 metals of Ti, Zr, or Hf; wherein R1 is selected from the group consisting of a linear or branched C1-10 alkyl and a C6-12 aryl, preferably methyl, ethyl or n-propyl; R2 is selected from the group consisting of branched C3-10 alkyls, preferably iso-propyl, tert-butyl, sec-butyl, iso-butyl, or tert-amyl and a C6-12 aryl; R3 is selected from the group consisting of hydrogen, C1-10 alkyls, and a C6-12 aryl, preferably hydrogen. In a preferred embodiment of this invention, the precursor is a liquid or a solid with a melting point below 60° C.

    摘要翻译: 本发明涉及由下式表示的第4族金属前体:M(OR1)2(R2C(O)C(R3)C(O)OR1)2,其中M是Ti,Zr的第4族金属 ,或Hf; 其中R 1选自直链或支链C 1-10烷基和C 6-12芳基,优选甲基,乙基或正丙基; R2选自支链C 3-10烷基,优选异丙基,叔丁基,仲丁基,异丁基或叔戊基和C 6-12芳基; R 3选自氢,C 1-10烷基和C 6-12芳基,优选氢。 在本发明的优选实施方案中,前体是熔点低于60℃的液体或固体。