Amidate Precursors For Depositing Metal Containing Films
    5.
    发明申请
    Amidate Precursors For Depositing Metal Containing Films 有权
    用于沉积含金属膜的酰胺前体

    公开(公告)号:US20120045589A1

    公开(公告)日:2012-02-23

    申请号:US13030227

    申请日:2011-02-18

    摘要: Volatile metal amidate metal complexes are exemplified by bis(N-(tert-butyl)ethylamidate)bis(ethylmethylamido) titanium; (N-(tert-butyl)(tert-butyl)amidate)tris(ethylmethylamido) titanium; bis(N-(tert-butyl)(tert-butyl)amidate)bis(dimethylamido) titanium and (N-(tert-butyl)(tert-butyl)amidate)tris(dimethylamido) titanium. The term “volatile” referes to any precursor of this invention having vapor pressure above 0.5 torr at temperature less than 200° C. Metal-containing film depositions using these metal amidate ligands are also described.

    摘要翻译: 挥发性金属酰胺化物金属络合物的实例是双(N-(叔丁基)乙基氨基乙酸酯)双(乙基甲基氨基)钛; (N-(叔丁基)(叔丁基)酰胺酯)三(乙基甲基氨基)钛; 双(N-(叔丁基)(叔丁基)酰胺酯)双(二甲基氨基)钛和(N-(叔丁基)(叔丁基)酰胺酯)三(二甲基氨基)钛。 术语“挥发性”适用于在低于200℃的温度下蒸气压高于0.5托的本发明任何前体。还描述了使用这些金属酰胺化物配体的含金属膜沉积。

    Amidate precursors for depositing metal containing films
    6.
    发明授权
    Amidate precursors for depositing metal containing films 有权
    用于沉积含金属膜的酰胺化前体

    公开(公告)号:US08642797B2

    公开(公告)日:2014-02-04

    申请号:US13030227

    申请日:2011-02-18

    摘要: Volatile metal amidate metal complexes are exemplified by bis(N-(tert-butyl)ethylamidate)bis(ethylmethylamido) titanium; (N-(tert-butyl)(tert-butyl)amidate)tris(ethylmethylamido) titanium; bis(N-(tert-butyl)(tert-butyl)amidate)bis(dimethylamido) titanium and (N-(tert-butyl)(tert-butyl)amidate)tris(dimethylamido) titanium. The term “volatile” refers to any precursor of this invention having vapor pressure above 0.5 torr at temperature less than 200° C. Metal-containing film depositions using these metal amidate ligands are also described.

    摘要翻译: 挥发性金属酰胺化物金属络合物的实例是双(N-(叔丁基)乙基氨基乙酸酯)双(乙基甲基氨基)钛; (N-(叔丁基)(叔丁基)酰胺酯)三(乙基甲基氨基)钛; 双(N-(叔丁基)(叔丁基)酰胺酯)双(二甲基氨基)钛和(N-(叔丁基)(叔丁基)酰胺酯)三(二甲基氨基)钛。 术语“挥发性”是指在低于200℃的温度下蒸气压高于0.5托的本发明任何前体。还描述了使用这些金属酰胺化物配体的含金属膜沉积。

    Group IV metal complexes for metal-containing film deposition
    7.
    发明授权
    Group IV metal complexes for metal-containing film deposition 有权
    用于含金属膜沉积的IV族金属络合物

    公开(公告)号:US08691710B2

    公开(公告)日:2014-04-08

    申请号:US13362077

    申请日:2012-01-31

    IPC分类号: C07D207/46 H01L21/70

    摘要: Metal-containing complexes with general formula (1) (R1nPyr)(R2nPyr)ML1L2; or (2) [(R8XR9)(R1nPyr)(R2nPyr)]ML1L2 are disclosed; wherein M is a Group IV metal, Pyr is pyrrolyl ligand, n=1, 2 and 3, L1 and L2 are independently selected from alkoxide, amide or alkyl, L1 and L2 can be linked together, R1 and R2 can be same or different organic groups substituted at 2,3,4-positions of the pyrrole ring and are selected from the group consisting of linear and branched C1-6 alkyls, R8 and R9 are independently selected from the linear or branched chain alkylene group having 2-6 carbon atoms, and X is CH2 or oxygen. Methods of using the metal complexes as precursors to deposit metal or metal oxide films used for various devices in semi-conductor industries are also discussed.

    摘要翻译: 含有通式(1)(R1nPyr)(R2nPyr)的金属络合物ML1L2; 或(2)[(R8XR9)(R1nPyr)(R2nPyr)] ML1L2; 其中M是第IV族金属,Pyr是吡咯基配体,n = 1,2和3,L1和L2独立地选自烷氧基,酰胺或烷基,L1和L2可以连接在一起,R1和R2可以相同或不同 在吡咯环的2,3,4位被取代的有机基团,并且选自直链和支链C 1-6烷基,R 8和R 9独立地选自具有2-6个碳原子的直链或支链亚烷基 原子,X是CH 2或氧。 还讨论了使用金属络合物作为前体沉积用于半导体工业中各种器件的金属或金属氧化物膜的方法。

    Group IV Metal Complexes For Metal-Containing Film Deposition
    8.
    发明申请
    Group IV Metal Complexes For Metal-Containing Film Deposition 有权
    用于含金属膜沉积的IV族金属络合物

    公开(公告)号:US20130030191A1

    公开(公告)日:2013-01-31

    申请号:US13362077

    申请日:2012-01-31

    IPC分类号: C07F7/00 C23C16/22 C07F7/28

    摘要: Metal-containing complexes with general formula (1) (R1nPyr)(R2nPyr)ML1L2; or (2) [(R8XR9)(R1nPyr)(R2nPyr)]ML1L2 are disclosed; wherein M is a Group IV metal, Pyr is pyrrolyl ligand, n=1, 2 and 3, L1 and L2 are independently selected from alkoxide, amide or alkyl, L1 and L2 can be linked together, R1 and R2 can be same or different organic groups substituted at 2,3,4-positions of the pyrrole ring and are selected from the group consisting of linear and branched C1-6 alkyls, Wand R9 are independently selected from the linear or branched chain alkylene group having 2-6 carbon atoms, and X is CH2 or oxygen. Methods of using the metal complexes as precursors to deposit metal or metal oxide films used for various devices in semi-conductor industries are also discussed.

    摘要翻译: 含有通式(1)(R1nPyr)(R2nPyr)的金属络合物ML1L2; 或(2)[(R8XR9)(R1nPyr)(R2nPyr)] ML1L2; 其中M是第IV族金属,Pyr是吡咯基配体,n = 1,2和3,L1和L2独立地选自烷氧基,酰胺或烷基,L1和L2可以连接在一起,R1和R2可以相同或不同 在吡咯环的2,3,4位被取代的有机基团,并且选自直链和支链C 1-6烷基,W 9和R 9独立地选自具有2-6个碳原子的直链或支链亚烷基 ,X为CH 2或氧。 还讨论了使用金属络合物作为前体沉积用于半导体工业中各种器件的金属或金属氧化物膜的方法。