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    Magnetic Storage Element Utilizing Improved Pinned Layer Stack
    11.
    发明申请
    Magnetic Storage Element Utilizing Improved Pinned Layer Stack 有权
    磁存储元件利用改进的固定层堆栈

    公开(公告)号：US20120012952A1

    公开(公告)日：2012-01-19

    申请号：US12837535

    申请日：2010-07-16

    申请人： Wei-Chuan Chen ,  Seung H. Kang ,  Xiaochun Zhu ,  Xia Li

    发明人： Wei-Chuan Chen ,  Seung H. Kang ,  Xiaochun Zhu ,  Xia Li

    IPC分类号： H01L29/82 ,  H01L21/02

    CPC分类号： H01L43/08

    摘要： A magnetic tunnel junction (MTJ) storage element may comprise a pinned layer stack and a first functional layer. The pinned layer stack is formed of a plurality of layers comprising a bottom pinned layer, a coupling layer, and a top pinned layer. The first functional layer is disposed in the bottom pinned layer or the top pinned layer.

    摘要翻译： 磁性隧道结（MTJ）存储元件可以包括钉扎层堆叠和第一功能层。 钉扎层堆叠由包括底部钉扎层，耦合层和顶部钉扎层的多个层形成。 第一功能层设置在底部钉扎层或顶部钉扎层中。

    Composite Hardmask Architecture and Method of Creating Non-Uniform Current Path for Spin Torque Driven Magnetic Tunnel Junction
    12.
    发明申请
    Composite Hardmask Architecture and Method of Creating Non-Uniform Current Path for Spin Torque Driven Magnetic Tunnel Junction 有权
    复合硬掩模结构和创建用于自旋扭矩驱动磁隧道结的非均匀电流路径的方法

    公开(公告)号：US20110169112A1

    公开(公告)日：2011-07-14

    申请号：US12687426

    申请日：2010-01-14

    申请人： Wei-Chuan Chen ,  Seung H. Kang ,  Xiaochun Zhu

    发明人： Wei-Chuan Chen ,  Seung H. Kang ,  Xiaochun Zhu

    IPC分类号： H01L43/08 ,  H01L21/02

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/32 ,  H01L43/08 ,  H01L43/12

    摘要： A magnetic tunnel junction (MTJ) storage element and method of forming the MTJ are disclosed. The magnetic tunnel junction (MTJ) storage element includes a pinned layer, a barrier layer, a free layer and a composite hardmask or top electrode. The composite hardmask/top electrode architecture is configured to provide a non-uniform current path through the MTJ storage element and is formed from electrodes having different resistance characteristics coupled in parallel. An optional tuning layer interposed between the free layer and the top electrode helps to reduce the damping constant of the free layer.

    摘要翻译： 公开了一种形成MTJ的磁性隧道结（MTJ）存储元件和方法。 磁隧道结（MTJ）存储元件包括钉扎层，阻挡层，自由层和复合硬掩模或顶部电极。 复合硬掩模/顶电极结构被配置为提供穿过MTJ存储元件的不均匀电流路径，并且由具有并联耦合的不同电阻特性的电极形成。 插入在自由层和顶部电极之间的可选调谐层有助于减小自由层的阻尼常数。

    Magnetic storage element utilizing improved pinned layer stack
    13.
    发明授权
    Magnetic storage element utilizing improved pinned layer stack 有权
    使用改进的钉扎层堆叠的磁存储元件

    公开(公告)号：US08564080B2

    公开(公告)日：2013-10-22

    申请号：US12837535

    申请日：2010-07-16

    申请人： Wei-Chuan Chen ,  Seung H. Kang ,  Xiaochun Zhu ,  Xia Li

    发明人： Wei-Chuan Chen ,  Seung H. Kang ,  Xiaochun Zhu ,  Xia Li

    IPC分类号： H01L29/82 ,  G11C11/02

    CPC分类号： H01L43/08

    摘要： A magnetic tunnel junction (MTJ) storage element may comprise a pinned layer stack and a first functional layer. The pinned layer stack is formed of a plurality of layers comprising a bottom pinned layer, a coupling layer, and a top pinned layer. The first functional layer is disposed in the bottom pinned layer or the top pinned layer.

    摘要翻译： 磁性隧道结（MTJ）存储元件可以包括钉扎层堆叠和第一功能层。 钉扎层堆叠由包括底部钉扎层，耦合层和顶部钉扎层的多个层形成。 第一功能层设置在底部钉扎层或顶部钉扎层中。

    STRAIN INDUCED REDUCTION OF SWITCHING CURRENT IN SPIN-TRANSFER TORQUE SWITCHING DEVICES
    14.
    发明申请
    STRAIN INDUCED REDUCTION OF SWITCHING CURRENT IN SPIN-TRANSFER TORQUE SWITCHING DEVICES 有权
    转子扭矩开关装置中开关电流的应变诱导减小

    公开(公告)号：US20130062714A1

    公开(公告)日：2013-03-14

    申请号：US13358694

    申请日：2012-01-26

    申请人： Xiaochun Zhu ,  Xia Li ,  Wei-Chuan Chen ,  Seung H. Kang

    发明人： Xiaochun Zhu ,  Xia Li ,  Wei-Chuan Chen ,  Seung H. Kang

    IPC分类号： H01L29/82 ,  H01L21/02

    CPC分类号： H01L43/12 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/325 ,  H01L27/222 ,  H01L41/12 ,  H01L43/08 ,  H01L43/10

    摘要： Partial perpendicular magnetic anisotropy (PPMA) type magnetic random access memory cells are constructed using processes and structural configurations that induce a directed static strain/stress on an MTJ to increase the perpendicular magnetic anisotropy. Consequently, reduced switching current of the MTJ results. The directed static strain/stress on the MTJ is induced in a controlled direction and/or with a controlled magnitude during fabrication. The MTJ is permanently subject to a predetermined directed stress and permanently includes the directed static strain/strain that provides reduced switching current.

    摘要翻译： 使用在MTJ上引起定向静态应变/应力以增加垂直磁各向异性的工艺和结构构造来构造部分垂直磁各向异性（PPMA）型磁性随机存取存储器单元。 因此，MTJ的开关电流降低。 在制造过程中，受控方向和/或受控幅度诱发MTJ上的定向静态应变/应力。 MTJ永久地受到预定的定向应力，并且永久地包括提供减小的开关电流的定向静态应变/应变。

    Fabricating a magnetic tunnel junction storage element
    15.
    发明授权
    Fabricating a magnetic tunnel junction storage element 有权
    制造磁性隧道结储存元件

    公开(公告)号：US08981502B2

    公开(公告)日：2015-03-17

    申请号：US12748750

    申请日：2010-03-29

    申请人： Wei-Chuan Chen ,  Seung H. Kang

    发明人： Wei-Chuan Chen ,  Seung H. Kang

    IPC分类号： H01L27/22 ,  H01L43/08 ,  H01L43/12

    CPC分类号： H01L43/08 ,  H01L27/228 ,  H01L43/12

    摘要： Methods for forming a magnetic tunnel junction (MTJ) storage element and MTJ storage elements formed are disclosed. The MTJ storage element includes a MTJ stack having a pinned layer stack, a barrier layer and a free layer. An adjusting layer is formed on the free layer, such that the free layer is protected from process related damages. A top electrode is formed on the adjusting layer and the adjusting layer and the free layer are etched utilizing the top electrode as a mask. A spacer layer is then formed, encapsulating the top electrode, the adjusting layer and the free layer. The spacer layer and the remaining portions of the MTJ stack are etched. A protective covering layer is deposited over the spacer layer and the MTJ stack.

    摘要翻译： 公开了形成磁性隧道结（MTJ）存储元件和形成的MTJ存储元件的方法。 MTJ存储元件包括具有钉扎层堆叠，阻挡层和自由层的MTJ堆叠。 在自由层上形成调整层，使自由层免受过程相关损害。 顶部电极形成在调整层上，并且利用顶部电极作为掩模蚀刻调整层和自由层。 然后形成间隔层，封装顶部电极，调节层和自由层。 蚀刻间隔层和MTJ叠层的其余部分。 保护覆盖层沉积在间隔层和MTJ堆叠上。

    METHOD AND DEVICE FOR ESTIMATING DAMAGE TO A MAGNETIC TUNNEL JUNCTION (MTJ) ELEMENT
    16.
    发明申请
    METHOD AND DEVICE FOR ESTIMATING DAMAGE TO A MAGNETIC TUNNEL JUNCTION (MTJ) ELEMENT 审中-公开
    用于估计磁悬浮连接（MTJ）元件的损伤的方法和装置

    公开(公告)号：US20130191048A1

    公开(公告)日：2013-07-25

    申请号：US13357417

    申请日：2012-01-24

    申请人： Xia Li ,  Wei-Chuan Chen ,  Seung H. Kang

    发明人： Xia Li ,  Wei-Chuan Chen ,  Seung H. Kang

    IPC分类号： G01R31/26 ,  G06F19/00

    CPC分类号： G11C29/50008 ,  G01R33/098 ,  G11C11/16 ,  G11C2029/5002 ,  H01L43/08

    摘要： A method of estimating damage to a magnetic tunnel junction (MTJ) element that includes providing an MTJ element having a magnetic barrier layer, the magnetic barrier layer having a periphery, a cross-sectional area and a thickness and comprising an inner region of undamaged magnetic barrier material and an outer region of damaged magnetic barrier material between the inner region and the periphery, determining a first value indicative of an electrical characteristic of the MTJ element, determining a second value indicative of the electrical characteristic that the MTJ element would have had if the outer region of damaged magnetic barrier material were not present and if the inner region of undamaged magnetic barrier material extended to the periphery, and calculating a value indicative of the size of the outer region of damaged magnetic barrier material from the first value and the second value. Also a computer configured to perform the method.

    摘要翻译： 一种估计对磁性隧道结（MTJ）元件的损伤的方法，该方法包括提供具有磁性阻挡层的MTJ元件，所述磁性阻挡层具有周边，横截面积和厚度，并且包括未损坏磁性的内部区域 阻挡材料和在内部区域和外围之间的损坏的磁阻材料的外部区域，确定指示MTJ元件的电特性的第一值，确定指示MTJ元件将具有的电特性的第二值 损坏的磁阻材料的外部区域不存在，并且如果未损坏的磁性阻挡材料的内部区域延伸到周边，并且从第一值和第二值计算表示损坏的磁阻材料的外部区域的尺寸的值 值。 也是配置为执行该方法的计算机。

    Spin-transfer switching magnetic element utilizing a composite free layer comprising a superparamagnetic layer
    17.
    发明授权
    Spin-transfer switching magnetic element utilizing a composite free layer comprising a superparamagnetic layer 有权
    旋转切换磁性元件利用包含超顺磁层的复合自由层

    公开(公告)号：US08362580B2

    公开(公告)日：2013-01-29

    申请号：US12632952

    申请日：2009-12-08

    申请人： Wei-Chuan Chen ,  Seung H. Kang

    发明人： Wei-Chuan Chen ,  Seung H. Kang

    IPC分类号： H01L43/00 ,  H01L43/12

    CPC分类号： H01L27/228 ,  G11C11/161 ,  H01L43/08 ,  H01L43/12

    摘要： A system and method for forming a magnetic tunnel junction (MTJ) storage element utilizes a composite free layer structure. The MTJ element includes a stack comprising a pinned layer, a barrier layer, and a composite free layer. The composite free layer includes a first free layer, a superparamagnetic layer and a nonmagnetic spacer layer interspersed between the first free layer and the superparamagnetic layer. A thickness of the spacer layer controls a manner of magnetic coupling between the first free layer and the superparamagnetic layer.

    摘要翻译： 用于形成磁性隧道结（MTJ）存储元件的系统和方法利用复合自由层结构。 MTJ元件包括包括钉扎层，阻挡层和复合自由层的堆叠。 复合自由层包括散布在第一自由层和超顺磁层之间的第一自由层，超顺磁层和非磁性间隔层。 间隔层的厚度控制第一自由层和超顺磁层之间的磁耦合的方式。

    Fabricating A Magnetic Tunnel Junction Storage Element
    20.
    发明申请
    Fabricating A Magnetic Tunnel Junction Storage Element 有权
    制造磁性隧道结储存元件

    公开(公告)号：US20110235217A1

    公开(公告)日：2011-09-29

    申请号：US12748750

    申请日：2010-03-29

    申请人： Wei-Chuan Chen ,  Seung H. Kang

    发明人： Wei-Chuan Chen ,  Seung H. Kang

    IPC分类号： G11B5/33 ,  B05D5/12

    CPC分类号： H01L43/08 ,  H01L27/228 ,  H01L43/12

    摘要： Methods for forming a magnetic tunnel junction (MTJ) storage element and MTJ storage elements formed are disclosed. The MTJ storage element includes a MTJ stack having a pinned layer stack, a barrier layer and a free layer. An adjusting layer is formed on the free layer, such that the free layer is protected from process related damages. A top electrode is formed on the adjusting layer and the adjusting layer and the free layer are etched utilizing the top electrode as a mask. A spacer layer is then formed, encapsulating the top electrode, the adjusting layer and the free layer. The spacer layer and the remaining portions of the MTJ stack are etched. A protective covering layer is deposited over the spacer layer and the MTJ stack.

    摘要翻译： 公开了形成磁性隧道结（MTJ）存储元件和形成的MTJ存储元件的方法。 MTJ存储元件包括具有钉扎层堆叠，阻挡层和自由层的MTJ堆叠。 在自由层上形成调整层，使自由层免受过程相关损害。 顶部电极形成在调整层上，并且利用顶部电极作为掩模蚀刻调整层和自由层。 然后形成间隔层，封装顶部电极，调节层和自由层。 蚀刻间隔层和MTJ叠层的其余部分。 保护覆盖层沉积在间隔层和MTJ堆叠上。