Abstract:
An image sensor includes a unit cell having a plurality of pixels; the unit cell comprising an amplifier input transistor that is shared by the plurality of pixels; a plurality of floating diffusions that are joined by a floating diffusion interconnect layer and are connected to the amplifier input transistor; and an interconnect layer which forms an output signal wire which shields the floating diffusion interconnect layer.
Abstract:
A CMOS image sensor includes a plurality of pixels arranged in an array; a plurality of sample and hold arrays; and a routing matrix which routes a signal from each pixel to one of the sample and hold arrays in a predetermined order.
Abstract:
An image sensor includes a photosensitive region that accumulates charge corresponding to received incident light; a transfer gate for transferring all or a portion of the charge from the photosensitive region; a voltage supply having an increasing voltage over time that is applied to the transfer gate; a floating diffusion for receiving the all or a portion of the charge from the photosensitive region and converting the charge to a voltage; an amplifier for receiving and amplifying a signal from the floating diffusion; a pulse detector for detecting a voltage pulse from the amplifier; and a counter for counting clock cycles between initiation of the increasing voltage until a signal is received from the detector which indicates initiation of charge transfer from the photosensitive region to the floating diffusion.
Abstract:
An image sensor includes a plurality of pixels for capturing an image; a sample and hold circuit array having a plurality of units for receiving signals from the plurality of pixels representing the captured image; a decoder for selecting each of the units of the sample and hold circuit array for output; and a delay circuit that includes an adjustable time delay to the decoder for compensating for time delays.
Abstract:
A CMOS image sensor includes a plurality of pixels arranged in an array; a plurality of sample and hold arrays; and a routing matrix which routes a signal from each pixel to one of the sample and hold arrays in a predetermined order.
Abstract:
An image sensor includes a plurality of photo-sensitive elements arranged in an array in which each photo-sensitive element converts incident light into a charge packet; a charge-to-voltage converter that receives each charge packet and converts the charge packet into a voltage; a voltage-to-frequency converter that receives each voltage and converts the voltage into a signal having a frequency; and a frequency-to-digital signal converter that receives each signal having the frequency and converts the signal having the frequency into a digital signal.
Abstract:
A method for outputting signals from dark reference pixels, the method includes the steps of transferring signals from dark reference pixels that are shielded from light to a plurality of storage circuit elements; and transferring signals substantially simultaneously from each of the plurality of storage circuit elements to an operational amplifier on one clock cycle which operational amplifier averages all the signals from the sample and hold circuits for providing an approximate average dark reference signal.
Abstract:
An image sensor includes a photosensitive region that accumulates charge corresponding to received incident light; a transfer gate for transferring charge from the photosensitive region; a voltage supply having an increasing voltage over time; a floating diffusion for receiving the charge from the photosensitive region and converting the charge to a voltage; an amplifier for receiving and amplifying a signal from the floating diffusion; a comparator for comparing a voltage from the amplifier to a reference voltage; and a counter for counting clock cycles between initiation of the increasing voltage until a signal is received from the comparator indicating charge transfer from the photosensitive region to the floating diffusion; wherein a digital signal is generated that represents an unfilled capacity of the photosensitive region.
Abstract:
A CMOS image sensor includes a photodiode for receiving incident light that is converted to a charge signal; a transfer mechanism for transferring the charge to a sensing node that converts the charge signal to an image voltage signal; and a sample-and-hold circuit. The sample-and-hold circuit includes a capacitor that receives the image voltage signal; and only one buffer amplifier that passes the image voltage signal to a differential amplifier. The buffer amplifier also receives a reset signal that is passed to the differential amplifier.
Abstract:
An active pixel image sensor comprising: (a) a pixel array having a plurality of pixels, each pixel comprising: (i) a photosensitive region connected to a charge-to-voltage conversion region; and (ii) an amplifier connected to the charge-to-voltage conversion region; and (b) a sample and hold circuit connected to one or more pixels comprising: (i) two capacitors for receiving and storing a reset signal and an image signal; (ii) two buffer amplifiers for respectively receiving the reset signal and the image signal respectively from the two capacitors; and (iii) a reference generator circuit connected to an input of the buffer amplifiers for removing offset of the buffer amplifier.