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49 条记录 (耗时 0.021 秒)

    Hydroxy polyimides and high temperature positive photoresists therefrom
    11.
    发明授权
    Hydroxy polyimides and high temperature positive photoresists therefrom 失效
    羟基聚酰亚胺和高温阳性光致抗蚀剂

    公开(公告)号：US4927736A

    公开(公告)日：1990-05-22

    申请号：US76098

    申请日：1987-07-21

    申请人： Werner H. Mueller ,  Dinesh N. Khanna

    发明人： Werner H. Mueller ,  Dinesh N. Khanna

    IPC分类号： G03C1/72 ,  C08G73/10 ,  C08L79/08 ,  C09D179/08 ,  G03F7/023 ,  G03F7/038

    CPC分类号： C08G73/1064 ,  C08G73/10 ,  C08G73/1039 ,  C08G73/1067 ,  C08G73/1071 ,  C08G73/1078 ,  G03F7/0233 ,  G03F7/0387

    摘要： This invention relates to novel hydroxy polyimides and radiation sensitive compositions prepared therefrom. More particularly the invention relates to positive photoresists useful in the preparation of a thermally stable relief pattern on a substrate e.g. a silicon wafer or aluminum plate. The novel hydroxy polyimides of the invention may also be used to provide thermally stable organic protective films and layers e.g. an insulating and/or a passivating layer in a semi-conductor component.The novel hydroxy polyimides of in this invention can be synthesized by the condensation of a hydroxy-substituted aminophenol and a dianhydride. Radiation sensitive compositions prepared from the novel hydroxy polyimides of the invention can be developed in aqueous base developer or organic solvent developer; preferably aqueous base developer. Also, the base developer dissolution properties of the polyimides can be controlled by incorporating a non-hydroxyl diamine into the polyimide.The polyimides utilized in this invention have good solubility properties in various organic solvents and also have good mechanical, electrical, adhesion and thermal properties. Radiation sensitive compositions made from hydroxy polyimides of this invention provide high-resolution relief images which are thermally stable up to a temperature of approximately 300.degree. C.

    摘要翻译： 本发明涉及由其制备的新的羟基聚酰亚胺和辐射敏感组合物。 更具体地说，本发明涉及可用于在基材上制备热稳定浮雕图案的正性光致抗蚀剂，例如 硅晶片或铝板。 本发明的新型羟基聚酰亚胺也可用于提供热稳定的有机保护膜和层。 半导体部件中的绝缘和/或钝化层。 本发明的新型羟基聚酰亚胺可以通过羟基取代的氨基苯酚和二酐的缩合来合成。 由本发明的新型羟基聚酰亚胺制备的辐射敏感性组合物可以在碱性显影剂或有机溶剂显影剂中显影; 优选碱性显影液。 此外，聚酰亚胺的碱显影剂溶解性能可以通过将非羟基二胺掺入到聚酰亚胺中来控制。 本发明中使用的聚酰亚胺在各种有机溶剂中具有良好的溶解性，并具有良好的机械，电气，粘合性和热性能。 由本发明的羟基聚酰亚胺制成的辐射敏感组合物提供在约300℃的温度下是热稳定的高分辨率浮雕图像。

    Heat resistant polybenzoxazole from bis-((aminohydroxyphenyl)hexafluoroisopropyl)diphenyl ether
    12.
    发明授权
    Heat resistant polybenzoxazole from bis-((aminohydroxyphenyl)hexafluoroisopropyl)diphenyl ether 失效
    来自双 - （（氨基羟基苯基）六氟异丙基）二苯基醚的耐热聚苯并恶唑

    公开(公告)号：US4939215A

    公开(公告)日：1990-07-03

    申请号：US327761

    申请日：1989-03-23

    申请人： Werner H. Mueller ,  Dinesh N. Khanna

    发明人： Werner H. Mueller ,  Dinesh N. Khanna

    IPC分类号： C08G69/26 ,  C08G69/32 ,  C08G73/22 ,  G02F1/1337 ,  G03F7/023 ,  G03F7/037 ,  H01B3/30

    CPC分类号： G02F1/133723 ,  C08G69/26 ,  C08G69/32 ,  C08G73/22 ,  G03F7/0233 ,  G03F7/037 ,  H01B3/303 ,  Y10T428/10

    摘要： Heat resistant, shapable, hydroxy and/or alkoxy-substituted polyamides derived from at least one diamine selected from unsubstituted and substituted 4,4'-bis[2-(4-amino-3-hydroxyphenyl)hexafluoroisopropyl)]diphenyl ether 4,4'-bis-[2-(3-amino-4-hydroxyphenyl)hexafluoroisopropyl]diphenyl ether and a dicarboxylic acid or a derivative thereof e.g. its acid halo or ester. The polyamides of the invention may be thermally cured to form polybenzoxazoles of higher heat resistance which are stable to hydrolytic, chemical and radiation attack.The polyamides of the invention may be formed into shaped articles by molding, extrusion and solvent casting processes preferably in the presence of a solvent or diluent and then optionally converted into heat resistant, insoluble polybenzoxazoles. These shaped articles are useful in aircraft, electronic and other commercial applications where heat, chemical and radiation resistance are desired in conjunction with good mechanical and electrical properties.

    摘要翻译： 衍生自至少一种选自未取代的和取代的4,4'-双[2-（4-氨基-3-羟基苯基）六氟异丙基）]二苯基醚4,4'-二胺的二胺的耐热，可成形的羟基和/或烷氧基取代的聚酰胺 ' - 双 - [2-（3-氨基-4-羟基苯基）六氟异丙基]二苯醚和二羧酸或其衍生物例如 其酸卤素或酯。 本发明的聚酰胺可以被热固化以形成对于水解，化学和辐射攻击是稳定的较高耐热性的聚苯并恶唑。 本发明的聚酰胺可以通过模制，挤出和溶剂浇铸方法形成成型制品，优选在溶剂或稀释剂的存在下，然后任选地转化成耐热不溶性聚苯并恶唑。 这些成型制品在飞机，电子和其他商业应用中是有用的，其中需要耐热，耐化学性和耐辐射性以及良好的机械和电学性能。

    Polyamide containing the hexafluoroisopropylidene group and process of using to form a positive image
    13.
    发明授权
    Polyamide containing the hexafluoroisopropylidene group and process of using to form a positive image 失效
    含有六氟异亚丙基的聚酰胺和使用形成正像的方法

    公开(公告)号：US5240819A

    公开(公告)日：1993-08-31

    申请号：US667761

    申请日：1991-03-11

    申请人： Werner H. Mueller ,  Dinesh N. Khanna ,  Bernd Hupfer

    发明人： Werner H. Mueller ,  Dinesh N. Khanna ,  Bernd Hupfer

    IPC分类号： C08G69/26 ,  C08G69/32 ,  G03F7/023

    CPC分类号： C08G69/32 ,  C08G69/26 ,  G03F7/0233 ,  Y10T428/31725 ,  Y10T428/31736

    摘要： This invention is that of high temperature polyamides containing the hexafluoroisopropylidene group. The high temperature polyamides of the invention and photo or radiation sensitizers provide improved high temperature positive resists which can be developed in aqueous alkaline developer and thermally anneal to form heat resistant, polyoxazole relief structures suitable for use in microelectronic and printing applications. The positive photoresists of the invention have improved solubility in coating solvents and improved photospeed. The polyamides of the invention can be prepared by conventional condensation reactions; e.g. the condensation of a diamine and diacid chloride. In addition the polyamides of this invention provide high temperature protective coatings with superior adhesion properties in applications other than the photoresist area.

    摘要翻译： 本发明是含有六氟异亚丙基的高温聚酰胺。 本发明的高温聚酰胺和光或辐射敏化剂提供改进的高温正性抗蚀剂，其可以在含水碱性显影剂中显影并热退火以形成适合用于微电子和印刷应用的耐热的聚恶唑消除结构。 本发明的正性光致抗蚀剂具有改进的涂料溶剂溶度和改进的感光速度。 本发明的聚酰胺可以通过常规的缩合反应制备; 例如 二胺和二酰氯的缩合。 此外，本发明的聚酰胺提供了除光刻胶区域之外的应用中具有优异粘合性能的高温保护涂层。

    Polyamide containing the hexafluoroisopropylidene group with O-quinone diazide in positive working photoresist
    14.
    发明授权
    Polyamide containing the hexafluoroisopropylidene group with O-quinone diazide in positive working photoresist 失效
    在正性光致抗蚀剂中含有六氟异亚丙基的聚酰胺与O-醌二叠氮化物

    公开(公告)号：US5021320A

    公开(公告)日：1991-06-04

    申请号：US376684

    申请日：1989-07-07

    申请人： Werner H. Mueller ,  Dinesh N. Khanna ,  Bernd Hupfer

    发明人： Werner H. Mueller ,  Dinesh N. Khanna ,  Bernd Hupfer

    IPC分类号： C08G69/26 ,  C08G69/32 ,  G03F7/023

    CPC分类号： G03F7/0233 ,  C08G69/26 ,  C08G69/32

    摘要： This invention is that of high temperature polyamides containing the hexafluoroisopropylidene group. The high temperature polyamides of the invention and photo or radiation sensitizers provide improved high temperature positive resists which can be developed in aqueous alkaline developer and thermally anneal to form heat resistant, polyoxazole relief structures suitable for use in microelectronic and printing applications. The positive photoresists of the invention have improved solubility in coating solvents and improved photospeed. The polyamides of the invention can be prepared by conventional condensation reactions; e.g. the condensation of a diamine and diacid chloride. In addition the polyamides of this invention provide high temperature protective coatings with superior adhesion properties in applications other than the photoresist area.

    摘要翻译： 本发明是含有六氟异亚丙基的高温聚酰胺。 本发明的高温聚酰胺和光或辐射敏化剂提供改进的高温正性抗蚀剂，其可以在含水碱性显影剂中显影并热退火以形成适合用于微电子和印刷应用的耐热的聚恶唑消除结构。 本发明的正性光致抗蚀剂具有改进的涂料溶剂溶度和改进的感光速度。 本发明的聚酰胺可以通过常规的缩合反应制备; 例如 二胺和二酰氯的缩合。 此外，本发明的聚酰胺提供了除光刻胶区域之外的应用中具有优异粘合性能的高温保护涂层。

    Polyamide containing the hexafluoroisopropylidene group
    17.
    发明授权
    Polyamide containing the hexafluoroisopropylidene group 失效
    含有六氟异亚丙基的聚酰胺

    公开(公告)号：US5077378A

    公开(公告)日：1991-12-31

    申请号：US526583

    申请日：1990-05-21

    申请人： Werner H. Mueller ,  Dinesh N. Khanna ,  Bernd Hupfer

    发明人： Werner H. Mueller ,  Dinesh N. Khanna ,  Bernd Hupfer

    IPC分类号： C08G69/26 ,  C08G69/32 ,  G03F7/023

    CPC分类号： G03F7/0233 ,  C08G69/26 ,  C08G69/32

    摘要： This invention is that of high temperature polyamides containing the hexafluoroisopropylidene group. The high temperature polyamides of the invention and photo or radiation sensitizers provide improved high temperature positive resists which can be developed in aqueous alkaline developer and thermally anneal to form heat resistant, polyoxazole relief structures suitable for use in microelectronic and printing applications. The positive photoresists of the invention have improved solubility in coating solvents and improved photospeed. The polyamides of the invention can be prepared by conventional condensation reactions; e.g. the condensation of a diamine and diacid chloride. In addition the polyamides of this invention provide high temperature protective coatings with superior adhesion properties in applications other than the photoresist area.

    摘要翻译： 本发明是含有六氟异亚丙基的高温聚酰胺。 本发明的高温聚酰胺和光或辐射敏化剂提供改进的高温正性抗蚀剂，其可以在含水碱性显影剂中显影并热退火以形成适用于微电子和印刷应用的耐热的聚恶唑消除结构。 本发明的正性光致抗蚀剂具有改进的涂料溶剂溶度和改进的感光速度。 本发明的聚酰胺可以通过常规的缩合反应制备; 例如 二胺和二酰氯的缩合。 此外，本发明的聚酰胺提供了除光刻胶区域之外的应用中具有优异粘合性能的高温保护涂层。

    Composition for stripping photoresist and organic materials from substrate surfaces
    18.
    发明授权
    Composition for stripping photoresist and organic materials from substrate surfaces 失效
    用于从基材表面剥离光致抗蚀剂和有机材料的组合物

    公开(公告)号：US06368421B1

    公开(公告)日：2002-04-09

    申请号：US09113892

    申请日：1998-07-10

    申请人： Joseph E. Oberlander ,  Mark S. Slezak ,  Dinesh N. Khanna ,  Dana L. Durham ,  Lawrence F. Spinicelli

    发明人： Joseph E. Oberlander ,  Mark S. Slezak ,  Dinesh N. Khanna ,  Dana L. Durham ,  Lawrence F. Spinicelli

    IPC分类号： B08B304

    CPC分类号： G03F7/426

    摘要： The invention relates to the field of microelectronics, such as integrated circuits, and more particularly to compositions and methods of removing photoresists or other organic materials from the surfaces of substrates used in the fabrication of integrated circuits. In particular the present invention relates to amine-free stripping compositions comprising solvent and surfactant that can effectively remove organic materials without corroding the underlying substrate, and the invention also relates to methods for removing these organic materials with the novel stripping composition.

    摘要翻译： 本发明涉及微电子学领域，例如集成电路，更具体地涉及从用于制造集成电路的衬底表面去除光致抗蚀剂或其它有机材料的组合物和方法。 特别地，本发明涉及不含无溶剂和表面活性剂的无胺汽提组合物，其可有效去除有机材料而不腐蚀下面的基底，本发明还涉及用新的汽提组合物除去这些有机材料的方法。

    Antireflective coating material for photoresists
    19.
    发明授权
    Antireflective coating material for photoresists 失效
    用于光致抗蚀剂的抗反射涂层材料

    公开(公告)号：US6106995A

    公开(公告)日：2000-08-22

    申请号：US373319

    申请日：1999-08-12

    申请人： Sunit S. Dixit ,  M. Dalil Rahman ,  Dinesh N. Khanna ,  Joseph E. Oberlander ,  Dana L. Durham

    发明人： Sunit S. Dixit ,  M. Dalil Rahman ,  Dinesh N. Khanna ,  Joseph E. Oberlander ,  Dana L. Durham

    IPC分类号： G03F7/004 ,  C09D5/00 ,  C09D179/00 ,  G03F7/09 ,  G03F7/11 ,  H01L21/027 ,  G03C1/492

    CPC分类号： G03F7/091

    摘要： The present invention relates to an antireflective coating composition comprising an admixture of:a) a polymer defined by the following structure: ##STR1## where, R.sub.1 & R.sub.2 are independently hydrogen, or C.sub.1 to C.sub.5 alkylR.sub.3 is a methyl, ethyl, propyl or butyl groupR.sub.4 -R.sub.7 are independently hydrogen, or C.sub.1 to C.sub.5 alkyln=10 to 50,000(b) a fluorine-containing, sparingly water-soluble (0.1%-10% by weight in water) organic C.sub.3 -C.sub.13 aliphatic carboxylic acid;(c) a non-metallic hydroxide; and(d) a solvent.The invention also relates to a method for producing such an antireflective coating composition and to a method for producing a microelectronic device using such an antireflective coating composition in conjunction with a photoresist composition.

    摘要翻译： 本发明涉及一种抗反射涂料组合物，其包含以下混合物的混合物：a）由以下结构定义的聚合物：其中R1和R2独立地为氢，或C1至C5烷基，R3为甲基，乙基，丙基或丁基R4 -R7独立地为氢，或C 1至C 5烷基n = 10至50,000（b）含氟的微水溶性（0.1重量％-10重量％的水）有机C 3 -C 13脂族羧酸; （c）非金属氢氧化物; 和（d）溶剂。 本发明还涉及一种制备这种抗反射涂料组合物的方法和一种使用这种抗反射涂料组合物与光致抗蚀剂组合物一起生产微电子器件的方法。