Abstract:
Active-on-active microelectronic devices are described. For example, a first die is on a second die with a bottom surface of a first substrate facing a top surface of a second substrate, respectively, to provide a die stack. The first and second dies each have metal layers in ILD layers to provide a first stack structure and a second stack structure, respectively. The first stack structure is interconnected to an upper end of a TSV of the first die. A metal layer of the second stack structure near a bottom surface of the first substrate is interconnected to a lower end of the TSV. A power distribution network layer of the second stack structure is located between lower and upper layers of the metal layers thereof. A transistor located at least in part in the second substrate is interconnected to the power distribution network layer to receive supply voltage or ground.
Abstract:
Approaches are disclosed for processing a circuit design to protect against single event upsets. A logic path of the circuit design is selected for redundancy based on a total of failure rates of circuit elements in the logic path being greater than a product of a target reduction in failure rate of the logic path and a failure rate of a voting circuit. The circuit design is modified to include at least three instances of the logic path coupled in parallel and a voting circuit coupled to receive output signals from the instances of the logic path. The modified circuit design is stored in a memory.
Abstract:
A circuit block within an integrated circuit includes a multiplexor (225, 625) configured to pass either a first signal or a second signal, wherein the first signal is independent of the second signal. The circuit block further includes a first flip-flop (210, 610) configured to receive an output of the multiplexor and a second flip-flop (215, 615) configured to receive the second signal. In a first mode of operation, the multiplexor passes the first signal to the first flip-flop. Further, the first flip flop and the second flip-flop operate independently of one another. In a second mode of operation, the multiplexor passes the second signal to the first flip-flop. Further, the first flip-flop and the second flip-flop both receive the second signal.
Abstract:
An apparatus includes a first die including a first substrate with first TSVs running through it, a first top metal layer and first chimney stack vias (CSVs) connecting the first TSVs with the first top metal layer. The apparatus further includes an uppermost die including an uppermost substrate and an uppermost top metal layer, and uppermost CSVs connecting the uppermost substrate with the uppermost top metal layer. The first and uppermost dies are stacked face to face, the first TSVs and the first CSVs are mutually aligned, and the dies are configured such that current is delivered to the apparatus from the first TSVs up through the first CSVs, the first and uppermost top metal layers, and the uppermost CSVs.
Abstract:
Examples described herein generally relate to forming and/or configuring a die stack in a multi-chip device. An example is a method of forming a multi-chip device. Dies are formed. At least two or more of the dies are interchangeable. Characteristics of the at least two or more of the dies that are interchangeable are determined. A die stack comprising the at least two or more of the dies that are interchangeable is formed. Respective placements within the die stack of the at least two or more of the dies that are interchangeable are based on the characteristics.
Abstract:
A circuit for preventing multi-bit upsets induced by single event transients is described. The circuit comprises a clock generator configured to generate a first clock signal and a second clock signal; a first memory element configured to receive a first input signal and generate a first output signal, the first memory element having a first clock input configured to receive the first clock signal; and a second memory element configured to receive the first output signal and generate a second output signal, the second memory element having a second clock input configured to receive the second clock signal; wherein the first clock signal is the same as the second clock signal. A method of preventing multi-bit upsets induced by single event transients is also described.
Abstract:
An exemplary interconnect circuit for a programmable integrated circuit (IC) includes an input terminal coupled to receive from a node in the programmable IC, an output terminal coupled to transmit towards another node in the programmable IC, first and second control terminals coupled to receive from a memory cell of the programmable IC, and a complementary metal oxide semiconductor (CMOS) pass-gate coupled between the input terminal and the output terminal and to the first and second control terminals. The CMOS pass-gate includes a P-channel transistor configured with a low threshold voltage for a CMOS process used to fabricate the programmable IC.
Abstract:
An integrated circuit having improved radiation immunity is described. The integrated circuit comprises a substrate; a P-well formed on the substrate and having N-type transistors of a memory cell; and an N-well formed on the substrate and having P-type transistors of the memory cell; wherein the N-well has minimal dimensions for accommodating the P-type transistors.