公开(公告)号：US20150179831A1

公开(公告)日：2015-06-25

申请号：US14640307

申请日：2015-03-06

Applicant: XINTEC INC.

Inventor： Wei-Luen SUEN ,  Wei-Ming CHIEN ,  Po-Han LEE ,  Tsang-Yu LIU ,  Yen-Shih HO

IPC: H01L31/0232 ,  H01L31/028 ,  H01L31/0236 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/18

CPC classification number: H01L31/02327 ,  H01L21/561 ,  H01L23/3114 ,  H01L31/02002 ,  H01L31/0203 ,  H01L31/02363 ,  H01L31/1804 ,  H01L2224/11

Abstract: A semiconductor structure includes a silicon substrate, a protection layer, an electrical pad, an isolation layer, a redistribution layer, a conductive layer, a passivation layer, and a conductive structure. The silicon substrate has a concave region, a step structure, a tooth structure, a first surface, and a second surface opposite to the first surface. The step structure and the tooth structure surround the concave region. The step structure has a first oblique surface, a third surface, and a second oblique surface facing the concave region and connected in sequence. The protection layer is located on the first surface of the silicon substrate. The electrical pad is located in the protection layer and exposed through the concave region. The isolation layer is located on the first and second oblique surfaces, the second and third surfaces of the step structure, and the tooth structure.

Abstract translation: 半导体结构包括硅衬底，保护层，电焊盘，隔离层，再分配层，导电层，钝化层和导电结构。 硅基板具有凹形区域，台阶结构，齿结构，第一表面和与第一表面相对的第二表面。 台阶结构和齿结构围绕凹区域。 台阶结构具有第一倾斜表面，第三表面和面对凹入区域并且依次连接的第二倾斜表面。 保护层位于硅衬底的第一表面上。 电焊盘位于保护层中，并通过凹面露出。 隔离层位于第一和第二倾斜表面，台阶结构的第二和第三表面以及齿结构上。

公开(公告)号：US20150054002A1

公开(公告)日：2015-02-26

申请号：US14464570

申请日：2014-08-20

Applicant: XINTEC INC.

Inventor： Wei-Ming CHIEN ,  Chia-Sheng LIN ,  Tsang-Yu LIU ,  Yen-Shih HO

IPC: H01L23/522 ,  H01L33/62 ,  H01L31/16

CPC classification number: H01L27/14687 ,  H01L21/76898 ,  H01L27/14601 ,  H01L27/14636 ,  H01L33/62

Abstract: A manufacturing method of a semiconductor structure includes the following steps. A patterned photoresist layer is formed on a wafer of the wafer structure. The wafer is etched, such that channels are formed in the wafer, and a protection layer of the wafer structure is exposed through the channels. The protection layer is etched, such that openings aligned with the channels are formed in the protection layer. Landing pads in the protection layer are respectively exposed through the openings and the channels, and the caliber of each of the openings is gradually increased toward the corresponding channel. Side surfaces of the wafer surrounding the channels are etched, such that the channels are expanded to respectively form hollow regions. The caliber of the hollow region is gradually decreased toward the opening, and the caliber of the opening is smaller than that of the hollow region.

Abstract translation: 半导体结构的制造方法包括以下步骤。 在晶片结构的晶片上形成图案化的光致抗蚀剂层。 蚀刻晶片，使得沟槽形成在晶片中，晶片结构的保护层通过沟道露出。 蚀刻保护层，使得在保护层中形成与沟道对准的开口。 保护层中的着陆垫分别通过开口和通道暴露，并且每个开口的口径朝着相应的通道逐渐增加。 蚀刻围绕通道的晶片的侧表面，使得通道膨胀以分别形成中空区域。 中空区域的口径朝向开口逐渐减小，并且开口的口径小于中空区域的口径。