公开(公告)号：US20250056911A1

公开(公告)日：2025-02-13

申请号：US18751148

申请日：2024-06-21

Applicant: Xintec Inc.

Inventor： Wei-Luen SUEN ,  Chien Wei CHANG ,  Zi-Yu LIAO ,  Jiun-Yen LAI ,  Tsang Yu LIU

IPC: H01L27/146 ,  H01L21/78 ,  H01L23/00 ,  H01L23/498

Abstract: A chip package includes a semiconductor substrate, a light-transmissive plate, a bonding layer, and a light-shielding layer. The bonding layer is located between the semiconductor substrate and the light-transmissive plate. The semiconductor substrate, the bonding layer, and the light-transmissive plate jointly define a sidewall including a first region and a second region. The first region extends from the semiconductor substrate to the light-transmissive plate, and is recessed relative to the second region. The light-shielding layer covers the sidewall and includes an extending portion, a wide portion, and a narrow portion. The extending portion is located on a surface of the semiconductor substrate facing away from the bonding layer. The wide portion is located on the first region of the sidewall. The narrow portion is located on the second region of the sidewall.

公开(公告)号：US20210082841A1

公开(公告)日：2021-03-18

申请号：US17023199

申请日：2020-09-16

Applicant: XINTEC INC.

Inventor： Po-Han LEE ,  Chia-Ming CHENG ,  Jiun-Yen LAI ,  Ming-Chung CHUNG ,  Wei-Luen SUEN

IPC: H01L23/66 ,  H01L23/00 ,  H01L23/552 ,  H01L21/3213

Abstract: A chip package includes a semiconductor substrate, a supporting element, an antenna layer, and a redistribution layer. The semiconductor substrate has an inclined sidewall and a conductive pad that protrudes from the inclined sidewall. The supporting element is located on the semiconductor substrate, and has a top surface facing away from the semiconductor substrate, and has an inclined sidewall adjoining the top surface. The antenna layer is located on the top surface of the supporting element. The redistribution layer is located on the inclined sidewall of the supporting element, and is in contact with a sidewall of the conductive pad and an end of the antenna.

公开(公告)号：US20150097286A1

公开(公告)日：2015-04-09

申请号：US14568056

申请日：2014-12-11

Applicant: XINTEC INC.

Inventor： Wei-Luen SUEN ,  Chia-Sheng LIN ,  Yen-Shih HO ,  Tsang-Yu LIU

IPC: H01L23/00

CPC classification number: H01L24/17 ,  H01L21/6835 ,  H01L21/6836 ,  H01L22/12 ,  H01L22/20 ,  H01L24/02 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/81 ,  H01L24/92 ,  H01L24/94 ,  H01L24/97 ,  H01L27/14618 ,  H01L27/14636 ,  H01L2221/68327 ,  H01L2221/68386 ,  H01L2224/0231 ,  H01L2224/0235 ,  H01L2224/02377 ,  H01L2224/11002 ,  H01L2224/11312 ,  H01L2224/11334 ,  H01L2224/13012 ,  H01L2224/13014 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/1403 ,  H01L2224/14051 ,  H01L2224/14131 ,  H01L2224/14145 ,  H01L2224/14177 ,  H01L2224/14179 ,  H01L2224/16058 ,  H01L2224/16227 ,  H01L2224/17051 ,  H01L2224/17517 ,  H01L2224/17519 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/81986 ,  H01L2224/92 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2224/14146 ,  H01L2224/81 ,  H01L2224/81907 ,  H01L21/78 ,  H01L2924/00012 ,  H01L2224/11 ,  H01L2924/00014

Abstract: A chip package includes a packaging substrate, a semiconductor chip, and a plurality of conductive structures. The semiconductor chip has a central region and an edge region that surrounds the central region. The conductive structures are between the packaging substrate and the semiconductor chip. The conductive structures have different heights, and the heights of the conductive structures are gradually increased from the central region of the semiconductor chip to the edge region of the semiconductor chip, such that a distance between the edge region of the semiconductor chip and the packaging substrate is greater than a distance between the central region of the semiconductor chip and the packaging substrate.

Abstract translation: 芯片封装包括封装基板，半导体芯片和多个导电结构。 半导体芯片具有围绕中心区域的中心区域和边缘区域。 导电结构位于封装衬底和半导体芯片之间。 导电结构具有不同的高度，并且导电结构的高度从半导体芯片的中心区域逐渐增加到半导体芯片的边缘区域，使得半导体芯片的边缘区域与封装基板之间的距离 大于半导体芯片的中心区域和封装基板之间的距离。

公开(公告)号：US20250081668A1

公开(公告)日：2025-03-06

申请号：US18803566

申请日：2024-08-13

Applicant: XINTEC INC.

Inventor： Wei-Luen SUEN ,  Po-Jung CHEN ,  Jiun-Yen LAI ,  Tsang Yu LIU

IPC: H01L31/02 ,  H01L21/66 ,  H01L31/0216 ,  H01L31/18

Abstract: A chip package includes a semiconductor substrate, an anti-reflection layer, and a metal multi-layer. The semiconductor substrate has an optical sensing area. The anti-reflection layer is located on the semiconductor substrate. The metal multi-layer is located on and in contact with the anti-reflection layer. The metal multi-layer includes a redistribution line and two probe pads. Two ends of the redistribution line respectively extend to the two probe pads. The redistribution line is located in the optical sensing area, and the two probe pads are located outside the optical sensing area. The orthographic projection area of the redistribution line in the optical sensing area is less than 1% of the area of the optical sensing area.

公开(公告)号：US20210269303A1

公开(公告)日：2021-09-02

申请号：US17184443

申请日：2021-02-24

Applicant: XINTEC INC.

Inventor： Wei-Luen SUEN ,  Jiun-Yen LAI ,  Hsing-Lung SHEN ,  Tsang-Yu LIU

IPC: B81B7/00 ,  B81C1/00

Abstract: A chip package includes a semiconductor substrate and a metal layer. The semiconductor substrate has an opening and a sidewall surrounding the opening, in which an upper portion of the sidewall is a concave surface. The semiconductor substrate is made of a material including silicon. The metal layer is located on the semiconductor substrate. The metal layer has plural through holes above the opening to define a MEMS (Microelectromechanical system) structure, in which the metal layer is made of a material including aluminum.

公开(公告)号：US20160086896A1

公开(公告)日：2016-03-24

申请号：US14958155

申请日：2015-12-03

Applicant: XINTEC INC.

Inventor： Yu-Lung HUANG ,  Chao-Yen LIN ,  Wei-Luen SUEN ,  Chien-Hui CHEN

IPC: H01L23/58 ,  H01L21/78 ,  H01L21/283 ,  H01L21/48

CPC classification number: H01L23/585 ,  H01L21/283 ,  H01L21/4853 ,  H01L21/561 ,  H01L21/6836 ,  H01L21/768 ,  H01L21/78 ,  H01L23/3121 ,  H01L23/49838 ,  H01L23/525 ,  H01L24/05 ,  H01L24/16 ,  H01L24/48 ,  H01L29/0657 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/02371 ,  H01L2224/02375 ,  H01L2224/02379 ,  H01L2224/02381 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05548 ,  H01L2224/05558 ,  H01L2224/06165 ,  H01L2224/06167 ,  H01L2224/1302 ,  H01L2224/131 ,  H01L2224/16105 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/24226 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73215 ,  H01L2224/73253 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/10155 ,  H01L2924/10156 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/00 ,  H01L2224/03 ,  H01L2924/014 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00012

Abstract: An embodiment of the invention provides a chip package including a semiconductor substrate having a first surface and a second surface opposite thereto. A conducting pad is located on the first surface. A side recess is on at least a first side of the semiconductor substrate, wherein the side recess extends from the first surface toward the second surface and across the entire length of the first side. A conducting layer is located on the first surface and electrically connected to the conducting pad, wherein the conducting layer extends to the side recess.

Abstract translation: 本发明的实施例提供一种芯片封装，其包括具有第一表面和与其相对的第二表面的半导体衬底。 导电垫位于第一表面上。 侧凹部位于半导体衬底的至少第一侧上，其中侧凹部从第一表面朝向第二表面延伸并跨越第一侧的整个长度。 导电层位于第一表面上并电连接到导电焊盘，其中导电层延伸到侧凹槽。

公开(公告)号：US20140015111A1

公开(公告)日：2014-01-16

申请号：US13941854

申请日：2013-07-15

Applicant: XINTEC INC.

Inventor： Yen-Shih HO ,  Shih-Chin CHEN ,  Yi-Ming CHANG ,  Chien-Hui CHEN ,  Chia-Ming CHENG ,  Wei-Luen SUEN ,  Chen-Han CHIANG

IPC: H01L23/544 ,  H01L21/78

CPC classification number: H01L23/544 ,  H01L21/78 ,  H01L23/3185 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2223/5446 ,  H01L2224/02371 ,  H01L2224/02377 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05554 ,  H01L2224/05567 ,  H01L2224/05569 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05669 ,  H01L2224/06155 ,  H01L2224/0616 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/14155 ,  H01L2224/1416 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/05552

Abstract: An embodiment of the invention provides a chip package which includes: a semiconductor substrate having a first surface and an opposite second surface; a device region disposed in the substrate; a dielectric layer located on the first surface of the semiconductor substrate; a plurality of conducting pads located in the dielectric layer and electrically connected to the device region; at least one alignment mark disposed in the semiconductor substrate and extending from the second surface towards the first surface.

Abstract translation: 本发明的实施例提供一种芯片封装，其包括：具有第一表面和相对的第二表面的半导体衬底; 设置在所述基板中的装置区域; 位于半导体衬底的第一表面上的电介质层; 位于所述电介质层中并电连接到所述器件区域的多个导电焊盘; 设置在所述半导体衬底中并且从所述第二表面朝向所述第一表面延伸的至少一个对准标记。

公开(公告)号：US20240109769A1

公开(公告)日：2024-04-04

申请号：US18538503

申请日：2023-12-13

Applicant: Xintec Inc.

Inventor： Wei-Luen SUEN ,  Jiun-Yen LAI ,  Hsing-Lung SHEN ,  Tsang-Yu LIU

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0067 ,  B81C1/00317 ,  B81B2203/0353 ,  B81C2201/0125 ,  B81C2201/0132 ,  B81C2201/0194

Abstract: A chip package includes a semiconductor substrate and a metal layer. The semiconductor substrate has an opening and a sidewall surrounding the opening, in which an upper portion of the sidewall is a concave surface. The semiconductor substrate is made of a material including silicon. The metal layer is located on the semiconductor substrate. The metal layer has plural through holes above the opening to define a MEMS (Microelectromechanical system) structure, in which the metal layer is made of a material including aluminum.

公开(公告)号：US20170179330A1

公开(公告)日：2017-06-22

申请号：US15451202

申请日：2017-03-06

Applicant: XINTEC INC.

Inventor： Wei-Luen SUEN ,  Wei-Ming CHIEN ,  Po-Han LEE ,  Tsang-Yu LIU ,  Yen-Shih HO

IPC: H01L31/18 ,  H01L31/0203 ,  H01L31/0236 ,  H01L31/02

CPC classification number: H01L31/02327 ,  H01L21/561 ,  H01L23/3114 ,  H01L31/02002 ,  H01L31/0203 ,  H01L31/02363 ,  H01L31/1804 ,  H01L2224/11

Abstract: A semiconductor structure includes a silicon substrate, a protection layer, an electrical pad, an isolation layer, a redistribution layer, a conductive layer, a passivation layer, and a conductive structure. The silicon substrate has a concave region, a step structure, a tooth structure, a first surface, and a second surface opposite to the first surface. The step structure and the tooth structure surround the concave region. The step structure has a first oblique surface, a third surface, and a second oblique surface facing the concave region and connected in sequence. The protection layer is located on the first surface of the silicon substrate. The electrical pad is located in the protection layer and exposed through the concave region. The isolation layer is located on the first and second oblique surfaces, the second and third surfaces of the step structure, and the tooth structure.

公开(公告)号：US20170148752A1

公开(公告)日：2017-05-25

申请号：US15351309

申请日：2016-11-14

Applicant: XINTEC INC.

Inventor： Yen-Shih HO ,  Chia-Sheng LIN ,  Po-Han LEE ,  Wei-Luen SUEN

IPC: H01L23/00

CPC classification number: H01L24/05 ,  H01L24/02 ,  H01L24/03 ,  H01L24/13 ,  H01L2224/0214 ,  H01L2224/02145 ,  H01L2224/0215 ,  H01L2224/0231 ,  H01L2224/0235 ,  H01L2224/0239 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/05016 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05556 ,  H01L2224/05558 ,  H01L2224/05562 ,  H01L2224/05567 ,  H01L2224/05582 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/13022 ,  H01L2224/13026 ,  H01L2224/131 ,  H01L2924/01013 ,  H01L2924/06 ,  H01L2924/15311 ,  H01L2924/00014 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/00012

Abstract: A chip package includes a substrate, an isolation layer, a redistribution layer, a passivation layer, a first conductive layer, a second conductive layer, and a conductive structure. The isolation layer is located on the substrate. The redistribution layer is located on the isolation layer. The passivation layer is located on the isolation layer and the redistribution layer. The passivation layer has an opening, a wall surface that surrounds the opening, and a surface that faces away from the isolation layer. A portion of the redistribution layer is exposed through the opening. The first conductive layer is located on the redistribution layer that is in the opening, and extends to the wall surface and the surface of the passivation layer. The second conductive layer covers the first conductive layer. The conductive structure is located on the second conductive layer and protrudes from the passivation layer.