公开(公告)号：US20080218598A1

公开(公告)日：2008-09-11

申请号：US12073402

申请日：2008-03-05

申请人： Kouichi Harada ,  Atsushi Kobayashi ,  Seiji Kobayashi ,  Tomoo Mitsunaga ,  Hiroaki Ono

发明人： Kouichi Harada ,  Atsushi Kobayashi ,  Seiji Kobayashi ,  Tomoo Mitsunaga ,  Hiroaki Ono

IPC分类号： H04N5/228

CPC分类号： H04N5/2353 ,  H04N5/35563 ,  H04N5/372 ,  H04N9/045 ,  H04N2209/045

摘要： A driving device includes a driving control unit that reads out the signal charge generated by at least the charge generating section for a low-sensitivity pixel signal to the charge transfer section, after the predetermined timing, continues incidence of the electromagnetic wave and, after continuing the incidence of the electromagnetic wave, reads out the signal charge generated by at least the charge generating section for a high-sensitivity pixel signal to the charge transfer section, transfers the signal charge read out to the charge transfer section through the charge transfer section, and, concerning at least one of the signal charges for the high-sensitivity pixel signal and the low-sensitivity pixel signal, every time the signal charge is read out to the charge transfer section, transfers the signal charge read out to the charge transfer section through the charge transfer section without retaining the signal charge in the charge transfer section.

摘要翻译： 驱动装置包括驱动控制单元，其在预定定时之后，向电荷转移部分读出至少由电荷产生部分产生的用于低灵敏度像素信号的信号电荷，继续进入电磁波，并在继续 电磁波的入射，向至少一个电荷产生部分产生的高灵敏度像素信号产生的信号电荷读出到电荷转移部分，通过电荷转移部分将读出的信号电荷传送到电荷转移部分， 并且，关于高灵敏度像素信号和低灵敏度像素信号的信号电荷中的至少一个，每当将信号电荷读出到电荷转移部分时，将读出的信号电荷传送到电荷转移部分 通过电荷转移部分，而不保持电荷转移部分中的信号电荷。

公开(公告)号：US07362364B2

公开(公告)日：2008-04-22

申请号：US10926058

申请日：2004-08-26

申请人： Kouichi Harada

发明人： Kouichi Harada

IPC分类号： H04N3/14 ,  H04N1/46 ,  H01L27/148 ,  H01L31/062 ,  H01L27/00

CPC分类号： H04N5/378

摘要： A solid-state image pickup device including a charge transferrer to transfer a signal charge obtained through photoelectric conversion; a floating diffusion region; a reset means for resetting the potential of the floating diffusion region; and a current source for supplying, to the floating diffusion region, a signal charge corresponding to the quantity of the signal charge transferred by the charge transferrer. The current source such as a current mirror circuit is interposed between the output stage of a horizontal CCD and the floating diffusion region so as to supply thereto a signal charge corresponding to the quantity of the signal charge transferred by the horizontal CCD, hence separating the horizontal CCD and the floating diffusion region potentially from each other, whereby the supply voltage, i.e., the reset voltage for the floating diffusion region, can be set independently of the potential of the horizontal CCD.

摘要翻译： 一种固态图像拾取装置，包括：电荷转移器，用于传送通过光电转换获得的信号电荷; 浮动扩散区; 用于复位浮动扩散区域的电位的复位装置; 以及用于向浮动扩散区域提供与由电荷转移器传送的信号电荷的量相对应的信号电荷的电流源。 诸如电流镜电路的电流源插入在水平CCD的输出级与浮动扩散区之间，以向其提供对应于由水平CCD传输的信号电荷的量的信号电荷，从而将水平CCD CCD和浮动扩散区域可以彼此相对，从而可以独立于水平CCD的电位来设置电源电压，即浮动扩散区域的复位电压。

公开(公告)号：US07289150B2

公开(公告)日：2007-10-30

申请号：US09910604

申请日：2001-07-20

申请人： Kouichi Harada

发明人： Kouichi Harada

IPC分类号： H04N3/14 ,  H04N5/335

CPC分类号： H04N5/3728 ,  H04N5/3415 ,  H04N5/3653 ,  H04N5/37213

摘要： In a CCD image apparatus in which an image section is horizontally divided into two areas, two horizontal CCDs are related to the two image areas with one-to-one correspondence and transfer the signal electric charges of the two image areas, and the two horizontal CCDs are driven in an identical direction by the same horizontal-driving pulses.

摘要翻译： 在将图像部分水平分割成两个区域的CCD图像装置中，两个水平CCD与两个图像区域以一一对应的方式相关，并传送两个图像区域的信号电荷，两个水平CCD CCD通过相同的水平驱动脉冲以相同的方向驱动。

公开(公告)号：US20060072026A1

公开(公告)日：2006-04-06

申请号：US11293384

申请日：2005-12-02

申请人： Kouichi Harada

发明人： Kouichi Harada

IPC分类号： H04N5/335

CPC分类号： H04N5/372 ,  H01L27/14806 ,  H01L27/14843 ,  H04N5/35554

摘要： In a solid-state image pickup device, third transfer electrodes are disposed in parallel to vertical transfer registers, and second transfer electrodes are disposed vertically to the vertical transfer registers. These transfer electrodes are also formed on the read-out gate portions to supply a driving voltage for reading out signal charges from photoelectric conversion elements. On the basis of the driving voltage applied to both the third and second transfer electrodes, the read-out of the signal charges to the vertical transfer registers is carried out. At the portion where the read-out of the signal charges is carried out, the transfer electrode at the read-out gate portion side and the sensor area of the photoelectric conversion element are formed so as to be adjacent to each other. At the portion where no read-out of signal charges is carried out, an offset area is provided between the transfer electrode at the read-out gate portion side and the sensor area of the photoelectric conversion element.

公开(公告)号：US06927091B2

公开(公告)日：2005-08-09

申请号：US10223478

申请日：2002-08-19

申请人： Kouichi Harada

发明人： Kouichi Harada

IPC分类号： H01L27/148 ,  H01L21/00 ,  H01L21/265 ,  H01L31/10

CPC分类号： H01L27/14687 ,  H01L27/14656

摘要： Disclosed is a method for fabricating a solid-state imaging device including a semiconductor substrate of a first conductivity type, a plurality of light-receiving sections provided at a distance in the surface region of the semiconductor substrate, and channel stop regions of a second conductivity type provided between the adjacent light-receiving sections in the surface region and in the internal region of the semiconductor substrate. The method includes the steps of forming a first photoresist layer having openings corresponding to positions at which the channel stop regions are formed; ion-implanting an impurity of a second conductivity type into the semiconductor substrate at a first energy through the first photoresist layer as a mask; forming a second photoresist layer having openings; and ion-implanting an impurity of a second conductivity type into the semiconductor substrate at a second energy through the second photoresist layer as a mask.

摘要翻译： 本发明公开了一种固态成像装置的制造方法，该固态成像装置包括第一导电型半导体基板，在该半导体基板的表面区域设置一定距离的多个受光部，以及具有第二导电性的通道停止区域 类型设置在表面区域和半导体衬底的内部区域中的相邻光接收部分之间。 该方法包括以下步骤：形成具有与形成沟道停止区域的位置对应的开口的第一光致抗蚀剂层; 以第一能量将通过第一光致抗蚀剂层的第二导电类型的杂质离子注入到半导体衬底中作为掩模; 形成具有开口的第二光致抗蚀剂层; 并且以第二能量通过第二光致抗蚀剂层将作为第二导电类型的杂质离子注入到半导体衬底中作为掩模。

公开(公告)号：USD447746S1

公开(公告)日：2001-09-11

申请号：US29120849

申请日：2000-03-28

申请人： Kazutoshi Tonozuka ,  Misa Iwamoto ,  Kouichi Harada ,  Kim Seokjin

设计人： Kazutoshi Tonozuka ,  Misa Iwamoto ,  Kouichi Harada ,  Kim Seokjin

公开(公告)号：US08847135B2

公开(公告)日：2014-09-30

申请号：US13185170

申请日：2011-07-18

申请人： Kyoko Izuha ,  Kouichi Harada

发明人： Kyoko Izuha ,  Kouichi Harada

IPC分类号： H01L27/00 ,  H01L27/146

CPC分类号： H04N5/3698 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14667

摘要： A solid-state imaging device includes: a semiconductor substrate including a light receiving surface which is divided according to pixels arranged in a matrix shape and is formed with a photoelectric converting section; an electrochromic film which is formed on the semiconductor substrate on a light incident path corresponding to the photoelectric converting section, in a portion of pixels selected from the pixels, and has light transmittance changing from a first transmittance to a second transmittance according to voltage applied thereto; a lower electrode which is formed below the electrochromic film; and an upper electrode which is formed above the electrochromic film.

摘要翻译： 一种固态成像装置，包括：半导体衬底，其包括根据以矩阵形状排列的像素分割并形成有光电转换部的受光面; 在从所述像素中选择的像素的一部分中，在与所述光电转换部对应的光入射路径上形成在所述半导体基板上的电致变色膜，并且根据施加到所述电致变色膜的电压具有从第一透射率向第二透射率变化的透光率 ; 形成在电致变色膜下面的下电极; 以及形成在电致变色膜上方的上电极。

公开(公告)号：US20120025061A1

公开(公告)日：2012-02-02

申请号：US13185170

申请日：2011-07-18

申请人： Kyoko Izuha ,  Kouichi Harada

发明人： Kyoko Izuha ,  Kouichi Harada

IPC分类号： H01L27/146 ,  H01L31/0232

CPC分类号： H04N5/3698 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14667

摘要： A solid-state imaging device includes: a semiconductor substrate including a light receiving surface which is divided according to pixels arranged in a matrix shape and is formed with a photoelectric converting section; an electrochromic film which is formed on the semiconductor substrate on a light incident path corresponding to the photoelectric converting section, in a portion of pixels selected from the pixels, and has light transmittance changing from a first transmittance to a second transmittance according to voltage applied thereto; a lower electrode which is formed below the electrochromic film; and an upper electrode which is formed above the electrochromic film.

摘要翻译： 一种固态成像装置，包括：半导体衬底，其包括根据以矩阵形状排列的像素分割并形成有光电转换部的受光面; 在从所述像素中选择的像素的一部分中，在与所述光电转换部对应的光入射路径上形成在所述半导体基板上的电致变色膜，并且根据施加到所述电致变色膜的电压具有从第一透射率向第二透射率变化的透光率 ; 形成在电致变色膜下面的下电极; 以及形成在电致变色膜上方的上电极。

公开(公告)号：US07936310B2

公开(公告)日：2011-05-03

申请号：US12175854

申请日：2008-07-18

申请人： Fumihiko Aiga ,  Seiichi Suenaga ,  Kouichi Harada ,  Tomohiro Suetsuna ,  Maki Yonetsu ,  Naoyuki Nakagawa ,  Tomoko Eguchi

发明人： Fumihiko Aiga ,  Seiichi Suenaga ,  Kouichi Harada ,  Tomohiro Suetsuna ,  Maki Yonetsu ,  Naoyuki Nakagawa ,  Tomoko Eguchi

IPC分类号： H01Q1/38 ,  H01Q15/02

CPC分类号： H01Q15/008

摘要： A high-impedance substrate is provided, which includes a metallic plate employed as a ground plane, a resonance circuit layer spaced away from the metallic plate by a distance “t”, the resonance circuit layer being provided with at least two resonance circuits having the same height and disposed side by side with a distance “g”, a connecting component connecting the resonance circuit with the metallic plate, and a magnetic material layer interposed between the metallic plate and the resonance circuit layer. The distance “t” between the metallic plate and the resonance circuit layer is confined within the range of 0.1 to 10 mm, the distance “g” between neighboring resonance circuits is confined within the range of 0.01 to 5 mm, the distance “h” between the magnetic material layer and the resonance circuit layer is confined within the range represented by the following inequality 1: g/2≦h≦t/2  inequality 1.

摘要翻译： 提供了一种高阻抗衬底，其包括用作接地面的金属板，与金属板隔开距离“t”的谐振电路层，谐振电路层设置有至少两个具有 并列配置有距离“g”，将谐振电路与金属板连接起来的连接部件以及介于金属板和谐振电路层之间的磁性体层。 金属板和谐振电路层之间的距离“t”限制在0.1至10mm的范围内，相邻谐振电路之间的距离“g”限制在0.01至5mm的范围内，距离“h” 在磁性材料层和谐振电路层之间限制在由以下不等式1表示的范围内：g / 2＆nlE; h＆nlE; t / 2不等式1。

公开(公告)号：US07740939B2

公开(公告)日：2010-06-22

申请号：US11880521

申请日：2007-07-23

申请人： Kouichi Harada ,  Tomohiro Suetsuna ,  Seiichi Suenaga ,  Maki Yonetsu

发明人： Kouichi Harada ,  Tomohiro Suetsuna ,  Seiichi Suenaga ,  Maki Yonetsu

IPC分类号： B32B5/16 ,  B28B1/00 ,  B28B3/00 ,  C04B35/01 ,  C04B35/14 ,  C04B35/26

CPC分类号： H01F1/24 ,  B22F1/02 ,  B22F2998/00 ,  C22C2202/02 ,  H01F41/0246 ,  Y10T428/12181 ,  Y10T428/2991 ,  B22F1/0018

摘要： An insulating magnetic metal particle includes a magnetic metal particle containing at least one metal selected from the group consisting of Co, Fe, and Ni and having a diameter of 5 to 500 nm, a first inorganic insulating layer made of an oxide that covers the surface of the magnetic metal particle, and a second inorganic insulating layer made of an oxide that produces a eutectic crystal by reacting together with the first inorganic insulating layer at the time of heating them, the second inorganic insulating layer being coated on the first inorganic insulating layer. A thickness ratio of the second inorganic insulating layer with respect to the first inorganic insulating layer is set so that the first inorganic insulating layer remains on the surface of the magnetic metal particle after producing the eutectic crystal.

摘要翻译： 绝缘磁性金属颗粒包括含有选自Co，Fe和Ni中的至少一种金属并且具有5至500nm直径的磁性金属颗粒，由覆盖该表面的氧化物制成的第一无机绝缘层 的第二无机绝缘层和由第一无机绝缘层在第一无机绝缘层上涂覆的第二无机绝缘层，所述第二无机绝缘层由通过与第一无机绝缘层一起反应而产生共晶晶体的氧化物构成， 。 设定第二无机绝缘层相对于第一无机绝缘层的厚度比，使得第一无机绝缘层在产生共晶晶体之后保留在磁性金属颗粒的表面上。