公开(公告)号：US20110037089A1

公开(公告)日：2011-02-17

申请号：US12937758

申请日：2010-03-17

申请人： Mitsuaki Oya ,  Toshiya Yokogawa ,  Atsushi Yamada ,  Akihiro Isozaki

发明人： Mitsuaki Oya ,  Toshiya Yokogawa ,  Atsushi Yamada ,  Akihiro Isozaki

IPC分类号： H01L33/40 ,  H01L21/20 ,  H01L29/20

CPC分类号： H01L21/28575 ,  H01L33/16 ,  H01L33/32 ,  H01L33/40

摘要： A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes a Zn layer 32 and an Ag layer 34 provided on the Zn layer 32. The Zn layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.

公开(公告)号：US09252330B2

公开(公告)日：2016-02-02

申请号：US13813792

申请日：2011-08-05

申请人： Akihiro Isozaki ,  Akira Inoue ,  Atsushi Yamada ,  Toshiya Yokogawa

发明人： Akihiro Isozaki ,  Akira Inoue ,  Atsushi Yamada ,  Toshiya Yokogawa

IPC分类号： H01L33/32 ,  H01L33/16 ,  H01L33/20 ,  H01L33/00

CPC分类号： H01L33/32 ,  H01L33/0079 ,  H01L33/16 ,  H01L33/20 ,  H01L2933/0083

摘要： A semiconductor light-emitting element according to the present invention includes: an n-type nitride semiconductor layer 21; a p-type nitride semiconductor layer 23; an active layer region 22 which includes an m plane nitride semiconductor layer and which is interposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer; an n-type electrode 30 which is electrically connected to the n-type nitride semiconductor layer; a p-type electrode 40 which is electrically connected to the p-type nitride semiconductor layer; a light-emitting face, through which polarized light that has been produced in the active layer region is extracted out of this element; and a striped structure 50 which is provided for the light-emitting face and which has a plurality of projections that run substantially parallel to the a-axis direction of the m plane nitride semiconductor layer.

摘要翻译： 根据本发明的半导体发光元件包括：n型氮化物半导体层21; p型氮化物半导体层23; 包括m面氮化物半导体层并且介于n型氮化物半导体层和p型氮化物半导体层之间的有源层区域22; 与n型氮化物半导体层电连接的n型电极30; 与p型氮化物半导体层电连接的p型电极40; 从该元件中提取出在有源层区域中产生的偏振光的发光面; 以及条形结构50，其被设置用于发光面，并且具有大致平行于m面氮化物半导体层的a轴方向延伸的多个突起。

公开(公告)号：US08748899B2

公开(公告)日：2014-06-10

申请号：US13447368

申请日：2012-04-16

申请人： Toshiya Yokogawa ,  Mitsuaki Oya ,  Atsushi Yamada ,  Ryou Kato

发明人： Toshiya Yokogawa ,  Mitsuaki Oya ,  Atsushi Yamada ,  Ryou Kato

IPC分类号： H01L29/778 ,  H01L33/32 ,  H01L29/78

CPC分类号： H01L33/32 ,  H01L33/16 ,  H01L33/40 ,  H01L2224/14 ,  H01L2224/16225 ,  H01L2924/181 ,  Y10T436/112499 ,  H01L2924/00012

摘要： A nitride-based semiconductor device according to the present disclosure includes a nitride-based semiconductor multilayer structure 20 with a p-type semiconductor region, of which the surface 12 defines a tilt angle of one to five degrees with respect to an m plane, and an electrode 30, which is arranged on the p-type semiconductor region. The p-type semiconductor region is made of an AlxInyGazN (where x+y+z=1, x≧0, y≧0 and z≧0) semiconductor layer 26. The electrode 30 includes an Mg layer 32, which is in contact with the surface 12 of the p-type semiconductor region, and a metal layer 34 formed on the Mg layer 32. The metal layer 34 is formed from at least one metallic element that is selected from the group consisting of Pt, Mo and Pd.

摘要翻译： 根据本公开的氮化物基半导体器件包括具有p型半导体区域的氮化物基半导体多层结构20，其表面12相对于m平面限定1至5度的倾斜角，以及 布置在p型半导体区域上的电极30。 p型半导体区域由Al x In y Ga z N（其中x + y + z = 1，x≥0，y≥0和z≥0）半导体层26制成。电极30包括Mg层32，其接触 与p型半导体区域的表面12以及形成在Mg层32上的金属层34.金属层34由选自Pt，Mo和Pd中的至少一种金属元素形成。

公开(公告)号：US20130126901A1

公开(公告)日：2013-05-23

申请号：US13813777

申请日：2011-08-05

申请人： Akihiro Isozaki ,  Akira Inoue ,  Atsushi Yamada ,  Toshiya Yokogawa

发明人： Akihiro Isozaki ,  Akira Inoue ,  Atsushi Yamada ,  Toshiya Yokogawa

IPC分类号： H01L33/32

CPC分类号： H01L33/32 ,  H01L33/0079 ,  H01L33/16 ,  H01L33/20 ,  H01L2933/0083

摘要： A semiconductor light-emitting element according to the present invention includes: an n-type nitride semiconductor layer 21; a p-type nitride semiconductor layer 23; an active layer region 22 which includes an m-plane nitride semiconductor layer and which is interposed between the n- and p-type nitride semiconductor layers; an n-type electrode 30 which is electrically connected to the n-type nitride semiconductor layer; a p-type electrode 40 which is electrically connected to the p-type nitride semiconductor layer; a light-emitting face, through which polarized light that has been produced in the active layer region is extracted out of this element; and a striped structure 50 which is provided for the light-emitting face and which has a plurality of projections that run in a direction that defines either an angle of 5 degrees to 80 degrees or an angle of −80 degrees to −5 degrees with respect to the a-axis direction of the m-plane nitride semiconductor layer.

摘要翻译： 根据本发明的半导体发光元件包括：n型氮化物半导体层21; p型氮化物半导体层23; 包括m面氮化物半导体层并且介于n型和p型氮化物半导体层之间的有源层区22。 与n型氮化物半导体层电连接的n型电极30; 与p型氮化物半导体层电连接的p型电极40; 从该元件中提取出在有源层区域中产生的偏振光的发光面; 以及条形结构50，其被设置用于发光面，并且具有多个突起，该多个突起在限定5度至80度的角度或-80度至-5度的角度的方向上延伸，相对于 相对于m面氮化物半导体层的a轴方向。

公开(公告)号：US08318594B2

公开(公告)日：2012-11-27

申请号：US12937756

申请日：2010-03-17

申请人： Mitsuaki Oya ,  Toshiya Yokogawa ,  Atsushi Yamada ,  Akihiro Isozaki

发明人： Mitsuaki Oya ,  Toshiya Yokogawa ,  Atsushi Yamada ,  Akihiro Isozaki

IPC分类号： H01L21/3205

CPC分类号： H01L33/40 ,  H01L33/32 ,  H01S5/0425 ,  H01S5/3202 ,  H01S5/32341

摘要： A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes an Mg layer 32 and an Ag layer 34 provided on the Mg layer 32. The Mg layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.

摘要翻译： 氮化物系半导体发光装置100具备：具有m面面12的GaN衬底10; 设置在GaN衬底10的m面表面12上的半导体多层结构20; 以及设置在半导体层叠结构体20上的电极30.电极30包括设置在Mg层32上的Mg层32和Ag层34.Mg层32与p型半导体区域的表面接触 半导体多层结构20。

公开(公告)号：US08299490B2

公开(公告)日：2012-10-30

申请号：US13167026

申请日：2011-06-23

申请人： Mitsuaki Oya ,  Toshiya Yokogawa ,  Atsushi Yamada ,  Akihiro Isozaki

发明人： Mitsuaki Oya ,  Toshiya Yokogawa ,  Atsushi Yamada ,  Akihiro Isozaki

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L33/32 ,  H01S5/0425 ,  H01S5/3202 ,  H01S5/32341

摘要： A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes an Mg layer 32 and an Ag layer 34 provided on the Mg layer 32. The Mg layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.

摘要翻译： 氮化物系半导体发光装置100具备：具有m面面12的GaN衬底10; 设置在GaN衬底10的m面表面12上的半导体多层结构20; 以及设置在半导体层叠结构体20上的电极30.电极30包括设置在Mg层32上的Mg层32和Ag层34.Mg层32与p型半导体区域的表面接触 半导体多层结构20。

公开(公告)号：US08791473B2

公开(公告)日：2014-07-29

申请号：US13256529

申请日：2009-07-09

申请人： Toshiya Yokogawa ,  Akira Inoue ,  Masaki Fujikane ,  Mitsuaki Oya ,  Atsushi Yamada ,  Tadashi Yano

发明人： Toshiya Yokogawa ,  Akira Inoue ,  Masaki Fujikane ,  Mitsuaki Oya ,  Atsushi Yamada ,  Tadashi Yano

IPC分类号： H01L33/32

CPC分类号： H01L25/0753 ,  H01L33/16 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： An illuminating device according to the present invention includes at least a first nitride-based semiconductor light-emitting element and a second nitride-based semiconductor light-emitting element, in which: the first nitride-based semiconductor light-emitting element and the second nitride-based semiconductor light-emitting element each include a semiconductor chip; the semiconductor chip includes a nitride-based semiconductor multilayer structure 45 formed from an AlxInyGazN (x+y+z=1, x≧0, y≧0, z≧0) semiconductor, and the nitride-based semiconductor multilayer structure 20 includes an active layer region 24 having an m-plane as an interface; the first nitride-based semiconductor light-emitting element and the second nitride-based semiconductor light-emitting element each emit polarized light from the active layer region 24; and, when the polarized light emitted from the first nitride-based semiconductor light-emitting element and the polarized light emitted from the second nitride-based semiconductor light-emitting element have wavelengths λ1 and λ2, respectively, and thicknesses of the semiconductor chips 45 of the first nitride-based semiconductor light-emitting element and the second nitride-based semiconductor light-emitting element are given as d1 and d2, respectively, the following relations are satisfied: λ1

摘要翻译： 根据本发明的照明装置至少包括第一氮化物基半导体发光元件和第二氮化物基半导体发光元件，其中：第一氮化物基半导体发光元件和第二氮化物半导体发光元件 半导体发光元件各自包括半导体芯片; 半导体芯片包括由Al x In y Ga z N（x + y + z = 1，x≥0，y≥0，z≥0）形成的氮化物基半导体多层结构45，氮化物类半导体多层结构20包括 具有m面作为界面的有源层区域24; 第一氮化物系半导体发光元件和第二氮化物系半导体发光元件均从有源层区域24发射偏振光; 并且当从第一氮化物基半导体发光元件发射的偏振光和从第二氮化物基半导体发光元件发出的偏振光分别具有波长λ1和λ2时，半导体芯片45的厚度 第一氮化物系半导体发光元件和第二氮化物系半导体发光元件分别赋予d1和d2，满足以下关系：λ1<λ2和d1

公开(公告)号：US08729579B2

公开(公告)日：2014-05-20

申请号：US13432022

申请日：2012-03-28

申请人： Toshiya Yokogawa ,  Akira Inoue ,  Masaki Fujikane ,  Mitsuaki Oya ,  Atsushi Yamada ,  Tadashi Yano

发明人： Toshiya Yokogawa ,  Akira Inoue ,  Masaki Fujikane ,  Mitsuaki Oya ,  Atsushi Yamada ,  Tadashi Yano

IPC分类号： H01L33/00

CPC分类号： H01L25/0753 ,  G02F1/133603 ,  H01L21/0254 ,  H01L21/02609 ,  H01L33/007 ,  H01L33/18 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： An illuminating device includes at least first and second nitride-based semiconductor light-emitting elements each having a semiconductor chip with an active layer region. The active layer region is at an angle of 1° or more with an m plane, and an angle formed by a normal line of a principal surface in the active layer region and a normal line of the m plane is 1° or more and 5° or less. The first and second nitride-based semiconductor light-emitting elements have thicknesses of d1 and d2, respectively, and emit the polarized light having wavelengths λ1 and λ2, respectively, where the inequalities of λ1

摘要翻译： 照明装置至少包括第一和第二氮化物基半导体发光元件，每个半导体发光元件具有带有活性层区域的半导体芯片。 有源层区域与m面成1°以上的角度，由有源层区域的主面的法线和m面的法线形成的角度为1°以上5 或更少。 第一和第二氮化物基半导体发光元件分别具有d1和d2的厚度，并且分别发射波长λ1和λ2的偏振光，其中满足λ1<λ2和d1

公开(公告)号：US08357607B2

公开(公告)日：2013-01-22

申请号：US12936960

申请日：2010-03-09

申请人： Mitsuaki Oya ,  Toshiya Yokogawa ,  Atsushi Yamada ,  Ryou Kato

发明人： Mitsuaki Oya ,  Toshiya Yokogawa ,  Atsushi Yamada ,  Ryou Kato

IPC分类号： H01L21/3205

CPC分类号： H01L33/40 ,  H01L33/16 ,  H01L33/32 ,  H01L2933/0016 ,  H01S5/0425 ,  H01S5/3202 ,  H01S5/32341

摘要： A nitride-based semiconductor light-emitting device 100 includes a GaN substrate 10, of which the principal surface is an m-plane 12, a semiconductor multilayer structure 20 that has been formed on the m-plane 12 of the GaN-based substrate 10, and an electrode 30 arranged on the semiconductor multilayer structure 20. The electrode 30 includes an Mg alloy layer 32 which is formed of Mg and a metal selected from a group consisting of Pt, Mo, and Pd. The Mg alloy layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.

摘要翻译： 氮化物系半导体发光器件100包括其主表面是m面12的GaN衬底10，已经形成在GaN基衬底10的m面12上的半导体多层结构20 以及布置在半导体多层结构20上的电极30.电极30包括由Mg和选自Pt，Mo和Pd的金属形成的Mg合金层32。 Mg合金层32与半导体多层结构体20的p型半导体区域的表面接触。

公开(公告)号：US08309984B2

公开(公告)日：2012-11-13

申请号：US13167865

申请日：2011-06-24

申请人： Mitsuaki Oya ,  Toshiya Yokogawa ,  Atsushi Yamada ,  Ryou Kato

发明人： Mitsuaki Oya ,  Toshiya Yokogawa ,  Atsushi Yamada ,  Ryou Kato

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L33/16 ,  H01L33/32 ,  H01L2933/0016 ,  H01S5/0425 ,  H01S5/3202 ,  H01S5/32341

摘要： A nitride-based semiconductor light-emitting device 100 includes a GaN substrate 10, of which the principal surface is an m-plane 12, a semiconductor multilayer structure 20 that has been formed on the m-plane 12 of the GaN-based substrate 10, and an electrode 30 arranged on the semiconductor multilayer structure 20. The electrode 30 includes an Mg alloy layer 32 which is formed of Mg and a metal selected from a group consisting of Pt, Mo, and Pd. The Mg alloy layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.

摘要翻译： 氮化物系半导体发光器件100包括其主表面是m面12的GaN衬底10，已经形成在GaN基衬底10的m面12上的半导体多层结构20 以及布置在半导体多层结构20上的电极30.电极30包括由Mg和选自Pt，Mo和Pd的金属形成的Mg合金层32。 Mg合金层32与半导体多层结构体20的p型半导体区域的表面接触。