公开(公告)号：US20080292863A1

公开(公告)日：2008-11-27

申请号：US12029566

申请日：2008-02-12

申请人： Fujio Yagihashi ,  Yoshitaka Hamada ,  Takeshi Asano ,  Motoaki Iwabuchi ,  Hideo Nakagawa ,  Masaru Sasago

发明人： Fujio Yagihashi ,  Yoshitaka Hamada ,  Takeshi Asano ,  Motoaki Iwabuchi ,  Hideo Nakagawa ,  Masaru Sasago

IPC分类号： B32B3/26 ,  C08G77/26 ,  C08G77/08

CPC分类号： C08G77/08 ,  C08G77/045 ,  C09D183/04 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/31695 ,  H01L21/7682 ,  Y10T428/249953

摘要： Provided is a method for preparing a siloxane polymer by hydrolysis and condensation reactions of a hydrolyzable silane compound, which has a step of preparing a salt of a silsesquioxane cage compound represented by the following formula (1): (SiO1.5—O)nn−X+n   (1) wherein, X represents NR4, Rs may be the same or different and each represents a linear or branched C1-4 alkyl group and n is an integer from 6 to 24 and a step of hydrolyzing and condensing the hydrolyzable silane compound with the salt of a silsesquioxane cage compound.

摘要翻译： 本发明提供一种通过水解性缩合反应制备硅氧烷聚合物的方法，该水解性硅烷化合物具有制备由下式（1）表示的倍半硅氧烷笼形化合物的盐的步骤： （“In-line Formula”）end =“lead”？>（SiO1.5-O）nn-X + n（1）<？in-line-formula description =“In-line Formulas”end =“tail”？ >其中，X表示NR4，Rs可以相同或不同，表示直链或支链C 1-4烷基，n表示6〜24的整数，将可水解硅烷化合物与 倍半硅氧烷笼形化合物。

公开(公告)号：US20070135565A1

公开(公告)日：2007-06-14

申请号：US11549731

申请日：2006-10-16

申请人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Yoshitaka Hamada ,  Takeshi Asano ,  Motoaki Iwabuchi ,  Hideo Nakagawa ,  Masaru Sasago

发明人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Yoshitaka Hamada ,  Takeshi Asano ,  Motoaki Iwabuchi ,  Hideo Nakagawa ,  Masaru Sasago

IPC分类号： C08L83/04

CPC分类号： C09D183/14 ,  C08G77/08 ,  C08K5/19 ,  C09D183/04 ,  C23C18/1212 ,  C23C18/122 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/31695 ,  Y10T428/31663

摘要： Provided are a composition for forming film which can form porous film excelling in dielectric constant, adhesiveness, uniformity of the film, mechanical strength and having low hygroscopicity; porous film and a method for forming the film; and a high-performing and highly reliable semiconductor device comprising the porous film inside. More specifically, provided is a composition for forming porous film, the composition comprising siloxane polymer and one or more quaternary ammonium salts represented by following formula (1) or (2): [(R1)4N]+[R2X]−  (1) Hk[(R1)4N]m+Yn−  (2) wherein X represents CO2, OSO3 or SO3; Y represents SO4, SO3, CO3, O2C—CO2, NO3 or NO2; and k is 0 or 1, m is 1 or 2 and n is 1 or 2 in proviso that n=1 requires k=0 and m=1, and n=2 requires k=0 and m=2, or k=1 and m=1.

摘要翻译： 提供一种形成膜的组合物，其可以形成介电常数，粘合性，膜均匀性，机械强度和吸湿性低的多孔膜; 多孔膜和形成膜的方法; 以及内部具有多孔膜的高性能，高可靠性的半导体装置。 更具体地说，提供了一种用于形成多孔膜的组合物，该组合物包含硅氧烷聚合物和一种或多种由下式（1）或（2）表示的季铵盐：<？在线公式描述=“在线式 “end =”lead“？> [（R＆lt; 1＆lt; 1＆gt;）＆lt; 4＆lt; N＆gt;＆lt; （1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end = “铅”？> k k k>>>>>> / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / （2）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中X表示CO 2 2， OSO 3或SO 3 3; Y表示SO 4，SO 3，CO 3，O 2，CO 2， 3，NO 3或NO 2; 并且k为0或1，m为1或2，n为1或2，条件是n = 1需要k = 0且m = 1，n = 2需要k = 0且m = 2，或k = 1 m = 1。

公开(公告)号：US07132473B2

公开(公告)日：2006-11-07

申请号：US10706862

申请日：2003-11-12

申请人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Yoshitaka Hamada ,  Takeshi Asano ,  Motoaki Iwabuchi ,  Hideo Nakagawa ,  Masaru Sasago

发明人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Yoshitaka Hamada ,  Takeshi Asano ,  Motoaki Iwabuchi ,  Hideo Nakagawa ,  Masaru Sasago

IPC分类号： C08G77/04 ,  C09D183/04

CPC分类号： C09D183/14 ,  C08G77/08 ,  C08K5/19 ,  C09D183/04 ,  C23C18/1212 ,  C23C18/122 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/31695 ,  Y10T428/31663

摘要： Provided are a composition for forming film which can form porous film excelling in dielectric constant, adhesiveness, uniformity of the film, mechanical strength and having low hygroscopicity; porous film and a method for forming the film; and a high-performing and highly reliable semiconductor device comprising the porous film inside. More specifically, provided is a composition for forming porous film, the composition comprising siloxane polymer and one or more quaternary ammonium salts represented by following formula (1) or (2): [(R1)4N]+[R2X]−  (1) Hk[(R1)4N]m+YV−  (2) wherein X represents CO2, OSO3 or SO3; Y represents SO4, SO3, CO3, O2C—CO2, NO3 or NO2; and k is 0 or 1, m is 1 or 2 and n is 1 or 2 in proviso that n=1 requires k=0 and m=1, and n=2 requires k=0 and m=2, or k=1 and m=1.

摘要翻译： 提供一种形成膜的组合物，其可以形成介电常数，粘合性，膜均匀性，机械强度和吸湿性低的多孔膜; 多孔膜和形成膜的方法; 以及内部具有多孔膜的高性能，高可靠性的半导体装置。 更具体地说，提供了一种用于形成多孔膜的组合物，该组合物包含硅氧烷聚合物和一种或多种由下式（1）或（2）表示的季铵盐：<？在线公式描述=“在线式 “end =”lead“？> [（R＆lt; 1＆lt; 1＆gt;）＆lt; 4＆lt; N＆gt;＆lt; （1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end = “铅”？> k k k>>>>>> / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / （2）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中X表示CO 2， OSO 3或SO 3 3; Y表示SO 4，SO 3，CO 3，O 2，CO 2， 3，NO 3或NO 2; 并且k为0或1，m为1或2，n为1或2，条件是n = 1需要k = 0且m = 1，n = 2需要k = 0且m = 2或k = 1 m = 1。

公开(公告)号：US07402621B2

公开(公告)日：2008-07-22

申请号：US11041780

申请日：2005-01-24

申请人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Yoshitaka Hamada ,  Takeshi Anaso ,  Motoaki Iwabuchi ,  Masaru Sasago ,  Hideo Nakagawa

发明人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Yoshitaka Hamada ,  Takeshi Anaso ,  Motoaki Iwabuchi ,  Masaru Sasago ,  Hideo Nakagawa

IPC分类号： C08G77/06

CPC分类号： H01L21/02126 ,  C08G77/06 ,  C08G77/08 ,  C09D183/02 ,  C09D183/04 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695

摘要： The invention provides a coating solution for forming a porous film having excellent mechanical strength and dielectric properties and for easily forming a film with a freely controlled film thickness in an ordinarily employed method in semiconductor process. More specifically, provided are a method for preparing a porous-film-forming composition comprising steps of preparing polysiloxane, silica or zeolite particles (Component A), imparting crosslinkability to Component A, and temporarily terminating the crosslinkability; and a porous-film-forming composition obtainable in this method. In addition, provided is a method of forming a porous film comprising steps of preparing a porous-film-forming composition by preparing Component A, imparting crosslinkability to Component A and adding a crosslinkability inhibitor to temporarily terminate the crosslinkability; applying the porous-film-forming composition onto a substrate to form a film, drying the film, crosslinking the particles along with removing the crosslinkability inhibitor by heating the dried film.

摘要翻译： 本发明提供一种用于形成具有优异的机械强度和介电性能的多孔膜的涂布溶液，并且在半导体工艺中通常采用的方法容易地形成具有自由控制的膜厚度的膜。 更具体地说，提供了制备多孔膜形成组合物的方法，其包括制备聚硅氧烷，二氧化硅或沸石颗粒（组分A）的步骤，赋予组分A交联性，并暂时终止交联性; 和通过该方法得到的多孔膜形成组合物。 此外，提供了形成多孔膜的方法，其包括通过制备组分A制备多孔膜形成组合物，赋予组分A交联性并加入交联性抑制剂以暂时终止交联性; 将多孔膜形成组合物施加到基材上以形成膜，干燥膜，使颗粒交联，同时通过加热干燥膜除去交联性抑制剂。

公开(公告)号：US20070087124A1

公开(公告)日：2007-04-19

申请号：US11537697

申请日：2006-10-02

申请人： Motoaki Iwabuchi ,  Fujio Yagihashi ,  Yoshitaka Hamada ,  Hideo Nakagawa ,  Masaru Sasago

发明人： Motoaki Iwabuchi ,  Fujio Yagihashi ,  Yoshitaka Hamada ,  Hideo Nakagawa ,  Masaru Sasago

IPC分类号： C08J9/26 ,  B05D3/02

CPC分类号： C08G77/16 ,  C08G77/04 ,  C08G77/08 ,  C08K5/235 ,  C09D183/04 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695 ,  C08L83/04

摘要： Provided are a composition for forming porous film which can form a porous film having practical mechanical strength in a simple and low cost process; a porous film and a method for forming the film; and an inexpensive, high-performing and highly reliable semiconductor device comprising the porous film inside. More specifically, provided is a composition for forming porous film, comprising a polymer which is obtainable by hydrolyzing and condensing one or more silane compounds represented by Formula (1), or preferably by hydrolyzing and co-condensing one or more silane compounds represented by Formula (1) and one more silane compounds represented by Formula (2), Formulas (1) and (2) being: (R1)aSi(R2)4-a  (1) (R3)bSi(R4)4-b  (2)Also provided is a method for forming porous film comprising a step of applying said composition on a substrate to form film and a step of transforming the film into porous film.

摘要翻译： 提供一种用于形成多孔膜的组合物，其可以以简单且低成本的方法形成具有实际机械强度的多孔膜; 多孔膜和形成膜的方法; 以及包含多孔膜的便宜，高性能和高可靠性的半导体器件。 更具体地说，提供了一种用于形成多孔膜的组合物，其包含通过水解和缩合一种或多种由式（1）表示的硅烷化合物，或优选通过水解和共缩合一种或多种由式 （1）和另外一个由式（2），式（1）和（2）表示的硅烷化合物是：<？in-line-formula description =“In-line formula”end =“lead” （1）＆lt;＆lt; 1＆gt;＆lt; 1＆gt;＆lt; 1＆gt; “In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？>（R <3> ） （2）<βin-line-formula description =“In-line Formulas”end =“tail”？ >还提供了一种形成多孔膜的方法，包括将所述组合物施加在基底上以形成膜的步骤和将膜转化为多孔膜的步骤。

公开(公告)号：US20060289849A1

公开(公告)日：2006-12-28

申请号：US11512968

申请日：2006-08-29

申请人： Fujio Yagihashi ,  Yoshitaka Hamada ,  Hideo Nakagawa ,  Masaru Sasago

发明人： Fujio Yagihashi ,  Yoshitaka Hamada ,  Hideo Nakagawa ,  Masaru Sasago

IPC分类号： H01L29/04

CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695

摘要： The invention includes a semiconductor device. Specifically provided is a semiconductor device comprising a porous film therein, the porous film being formable by a composition comprising a surfactant, an aprotic polar solvent and a solution comprising a polymer formed by hydrolysis and condensation of one or more silane compounds represented by foramula (1) : RnSi(OR′)4-n. Also provided is a method for manufacturing a porous film comprising steps of applying said composition so as to form a film, drying the film and transforming the dried film to a porous film by removing said surfactant. The porous film obtained from the composition for forming porous film is further provided.

摘要翻译： 本发明包括半导体器件。 具体提供的是其中包含多孔膜的半导体器件，多孔膜可通过包含表面活性剂，非质子极性溶剂和包含由一个或多个由下列物质表示的硅烷化合物的水解和缩合形成的聚合物（1 ）：R n Si（OR'）4-n 还提供了一种制造多孔膜的方法，包括以下步骤：施加所述组合物以形成膜，干燥膜并通过除去所述表面活性剂将干燥的膜转化为多孔膜。 进一步提供由多孔膜形成用组合物得到的多孔膜。

公开(公告)号：US07119354B2

公开(公告)日：2006-10-10

申请号：US10810360

申请日：2004-03-26

申请人： Fujio Yagihashi ,  Yoshitaka Hamada ,  Hideo Nakagawa ,  Masaru Sasago

发明人： Fujio Yagihashi ,  Yoshitaka Hamada ,  Hideo Nakagawa ,  Masaru Sasago

IPC分类号： H01L47/00

CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695

摘要： Provided is a coating liquid which can easily form a porous film having desirably controlled thickness by the method used for a usual semiconductor process, and having an excellent mesopore channel structure. Specifically provided is a composition for forming porous film comprising a surfactant, an aprotic polar solvent and a solution comprising a polymer formed by hydrolysis and condensation of one or more silane compounds represented by foramula (1): RnSi(OR′)4-n. Also provided is a method for manufacturing a porous film comprising steps of applying said composition so as to form a film, drying the film and transforming the dried film to a porous film by removing said surfactant. The porous film obtained from the composition for forming porous film is further provided.

摘要翻译： 本发明提供一种可以通过通常的半导体工艺使用的方法容易地形成具有期望的控制厚度的多孔膜并具有优异的中孔通道结构的涂布液。 具体地提供了一种用于形成多孔膜的组合物，其包含表面活性剂，非质子极性溶剂和包含通过水解和缩合由（1）表示的一种或多种硅烷化合物形成的聚合物的溶液：RnSi（OR'）4 -n 。 还提供了一种制造多孔膜的方法，包括以下步骤：施加所述组合物以形成膜，干燥膜并通过除去所述表面活性剂将干燥的膜转化为多孔膜。 进一步提供由多孔膜形成用组合物得到的多孔膜。

公开(公告)号：US20050165197A1

公开(公告)日：2005-07-28

申请号：US11041780

申请日：2005-01-24

申请人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Yoshitaka Hamada ,  Takeshi Anaso ,  Motoaki Iwabuchi ,  Masaru Sasago ,  Hideo Nakagawa

发明人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Yoshitaka Hamada ,  Takeshi Anaso ,  Motoaki Iwabuchi ,  Masaru Sasago ,  Hideo Nakagawa

IPC分类号： C04B38/00 ,  C01B33/12 ,  C08G77/06 ,  C08G77/08 ,  C09D183/02 ,  C09D183/04 ,  H01L21/316 ,  H01L21/768 ,  C08G77/20

CPC分类号： H01L21/02126 ,  C08G77/06 ,  C08G77/08 ,  C09D183/02 ,  C09D183/04 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695

摘要： The invention provides a coating solution for forming a porous film having excellent mechanical strength and dielectric properties and for easily forming a film with a freely controlled film thickness in an ordinarily employed method in semiconductor process. More specifically, provided are a method for preparing a porous-film-forming composition comprising steps of preparing polysiloxane, silica or zeolite particles (Component A), imparting crosslinkability to Component A, and temporarily terminating the crosslinkability; and a porous-film-forming composition obtainable in this method. In addition, provided is a method of forming a porous film comprising steps of preparing a porous-film-forming composition by preparing Component A, imparting crosslinkability to Component A and adding a crosslinkability inhibitor to temporarily terminate the crosslinkability; applying the porous-film-forming composition onto a substrate to form a film, drying the film, crosslinking the particles along with removing the crosslinkability inhibitor by heating the dried film.

摘要翻译： 本发明提供一种用于形成具有优异的机械强度和介电性能的多孔膜的涂布溶液，并且在半导体工艺中通常采用的方法容易地形成具有自由控制的膜厚度的膜。 更具体地说，提供了制备多孔膜形成组合物的方法，其包括制备聚硅氧烷，二氧化硅或沸石颗粒（组分A）的步骤，赋予组分A交联性，并暂时终止交联性; 和通过该方法得到的多孔膜形成组合物。 此外，提供了形成多孔膜的方法，其包括通过制备组分A制备多孔膜形成组合物，赋予组分A交联性并添加交联性抑制剂以暂时终止交联性的步骤; 将多孔膜形成组合物施加到基材上以形成膜，干燥膜，使颗粒交联，同时通过加热干燥膜除去交联性抑制剂。

公开(公告)号：US07126208B2

公开(公告)日：2006-10-24

申请号：US10706863

申请日：2003-11-12

申请人： Motoaki Iwabuchi ,  Fujio Yagihashi ,  Yoshitaka Hamada ,  Hideo Nakagawa ,  Masaru Sasago

发明人： Motoaki Iwabuchi ,  Fujio Yagihashi ,  Yoshitaka Hamada ,  Hideo Nakagawa ,  Masaru Sasago

IPC分类号： H01L23/58 ,  H01L21/31

CPC分类号： C08G77/16 ,  C08G77/04 ,  C08G77/08 ,  C08K5/235 ,  C09D183/04 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695 ,  C08L83/04

摘要： Provided are a composition for forming porous film which can form a porous film having practical mechanical strength in a simple and low cost process; a porous film and a method for forming the film; and an inexpensive, high-performing and highly reliable semiconductor device comprising the porous film inside. More specifically, provided is a composition for forming porous film, comprising a polymer which is obtainable by hydrolyzing and condensing one or more silane compounds represented by Formula (1), or preferably by hydrolyzing and co-condensing one or more silane compounds represented by Formula (1) and one more silane compounds represented by Formula (2), Formulas (1) and (2) being: (R1)aSi(R2)4-a   (1) (R3)bSi(R4)4-b   (2) Also provided is a method for forming porous film comprising a step of applying said composition on a substrate to form film and a step of transforming the film into porous film.

摘要翻译： 提供一种用于形成多孔膜的组合物，其可以以简单且低成本的方法形成具有实际机械强度的多孔膜; 多孔膜和形成膜的方法; 以及包含多孔膜的便宜，高性能和高可靠性的半导体器件。 更具体地说，提供了一种用于形成多孔膜的组合物，其包含通过水解和缩合一种或多种由式（1）表示的硅烷化合物，或优选通过水解和共缩合一种或多种由式 （1）和另外一个由式（2），式（1）和（2）表示的硅烷化合物是：<？in-line-formula description =“In-line formula”end =“lead” （1）＆lt;＆lt; 1＆gt;＆lt; 1＆gt;＆lt; 1＆gt; “In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？>（R <3> ） （2）<βin-line-formula description =“In-line Formulas”end =“tail”？ >还提供了一种形成多孔膜的方法，包括将所述组合物施加在基底上以形成膜的步骤和将膜转化为多孔膜的步骤。

公开(公告)号：US07084505B2

公开(公告)日：2006-08-01

申请号：US10808361

申请日：2004-03-25

申请人： Yoshitaka Hamada ,  Fujio Yagihashi ,  Hideo Nakagawa ,  Masaru Sasago

发明人： Yoshitaka Hamada ,  Fujio Yagihashi ,  Hideo Nakagawa ,  Masaru Sasago

IPC分类号： H01L23/48

CPC分类号： C08J9/0014 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695

摘要： A porous film-forming composition comprising (A) a curable silicone resin having a Mn of at least 100, (B) a micelle-forming surfactant, and (C) a compound which generates an acid upon pyrolysis remains stable during storage. The composition is coated and heat treated to form a porous film which has flatness, uniformity, a low dielectric constant and a high mechanical strength so that it is best suited as an interlayer dielectric film in the fabrication of semiconductor devices.

摘要翻译： 一种多孔成膜组合物，其包含（A）Mn至少为100的可固化有机硅树脂，（B）胶束形成性表面活性剂，和（C）在热解时产生酸的化合物在储存期间保持稳定。 将组合物进行涂布和热处理以形成具有平坦度，均匀性，低介电常数和高机械强度的多孔膜，使得其最适合作为半导体器件制造中的层间绝缘膜。