公开(公告)号：US07332446B2

公开(公告)日：2008-02-19

申请号：US10808692

申请日：2004-03-25

申请人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Yoshitaka Hamada ,  Takeshi Asano ,  Motoaki Iwabuchi ,  Hideo Nakagawa ,  Masaru Sasago

发明人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Yoshitaka Hamada ,  Takeshi Asano ,  Motoaki Iwabuchi ,  Hideo Nakagawa ,  Masaru Sasago

IPC分类号： H01L21/469

CPC分类号： H01L21/02126 ,  C09D183/04 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695

摘要： According to the invention, the thin film having the thickness controlled desirably can be easily formed using common semiconductor processes. Provided is a coating liquid for forming the porous film having an excellent dielectric property and mechanical property. Specifically, the coating liquid for forming a porous film comprises the condensation product obtained by condensation of one or more silicate compounds represented by the formula (X2O) i(SiO2)j(H2O)k and one more organosilate compounds represented by the formula (X2O)a(RSiO1.5)b(H2O)c. Thus, the porous insulating film having sufficient mechanical strength and dielectric properties for use in the semiconductor manufacturing process can be manufactured.

摘要翻译： 根据本发明，可以使用普通的半导体工艺容易地形成具有控制厚度的薄膜。 提供一种用于形成具有优异的介电性能和机械性能的多孔膜的涂布液。 具体地，用于形成多孔膜的涂布液包括通过一种或多种由式（X 2 O 2）O表示的硅酸盐化合物（SiO 2）的缩合获得的缩合产物， （H 2）2）另外，另外还有一种由式（ⅩⅪ）表示的有机硅酸盐化合物 （H 2 O）C（H 2 O）C（H 2 O） 。 因此，可以制造用于半导体制造工艺中具有足够的机械强度和介电性能的多孔绝缘膜。

公开(公告)号：US20080290472A1

公开(公告)日：2008-11-27

申请号：US12029562

申请日：2008-02-12

申请人： Fujio Yagihashi ,  Yoshitaka Hamada ,  Takeshi Asano ,  Tsutomu Ogihara ,  Motoaki Iwabuchi ,  Hideo Nakagawa ,  Masaru Sasago

发明人： Fujio Yagihashi ,  Yoshitaka Hamada ,  Takeshi Asano ,  Tsutomu Ogihara ,  Motoaki Iwabuchi ,  Hideo Nakagawa ,  Masaru Sasago

IPC分类号： H01L23/58 ,  C08K3/34 ,  C08K3/36 ,  B32B5/18 ,  H01L21/312

CPC分类号： H01L21/31695 ,  C08G77/16 ,  C08G77/70 ,  C08G77/80 ,  C08K3/36 ,  C08L83/04 ,  C09D183/04 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/7682 ,  H01L2221/1047 ,  Y10T428/249953 ,  C08L83/00

摘要： Provided is a porous-film-forming composition containing silicon-oxide-based fine particles and a polysiloxane compound obtained by hydrolysis and condensation reactions, in the presence of an acid catalyst, of a hydrolyzable silane compound containing at least one tetrafunctional alkoxysilane compound represented by the following formula (1): Si(OR1)4   (1) wherein, R1s may be the same or different and each independently represents a linear or branched C1-4 alkyl group and/or at least one alkoxysilane compound represented by the following formula (2): R2nSi(OR3)4-n   (2) wherein, R2(s) may be the same or different when there are plural R2s and each independently represents a linear or branched C1-8 alkyl group, R3(s) may be the same or different when there are plural R3s and each independently represents a linear or branched C1-4 alkyl group, and n is an integer from 1 to 3 in the reaction mixture containing a large excess of water.

摘要翻译： 本发明提供一种多孔膜形成用组合物，其含有氧化硅系微粒和通过水解缩合反应得到的聚硅氧烷化合物，在酸催化剂的存在下，含有至少一种四官能性烷氧基硅烷化合物的水解性硅烷化合物 以下公式（1）：<？in-line-formula description =“In-line formula”end =“lead”？> Si（OR1）4（1）<？in-line-formula description =“In-line 式中，R 1可以相同或不同，各自独立地表示直链或支链C 1-4烷基和/或由下式（2）表示的至少一种烷氧基硅烷化合物： in-line-formula description =“In-line Formulas”end =“lead”？> R2nSi（OR3）4-n（2）<？in-line-formula description =“In-line Formulas”end =“tail” 其中，当有多个R 2并且各自独立地表示直链或支链的C 1-8烷基时，R 2（s）可以相同或不同，R 3（s）可以相同或不同 当存在多个R 3并且各自独立地表示直链或支链C 1-4烷基时，并且n是含有大量过量水的反应混合物中n是1至3的整数。

公开(公告)号：US20070135565A1

公开(公告)日：2007-06-14

申请号：US11549731

申请日：2006-10-16

申请人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Yoshitaka Hamada ,  Takeshi Asano ,  Motoaki Iwabuchi ,  Hideo Nakagawa ,  Masaru Sasago

发明人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Yoshitaka Hamada ,  Takeshi Asano ,  Motoaki Iwabuchi ,  Hideo Nakagawa ,  Masaru Sasago

IPC分类号： C08L83/04

CPC分类号： C09D183/14 ,  C08G77/08 ,  C08K5/19 ,  C09D183/04 ,  C23C18/1212 ,  C23C18/122 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/31695 ,  Y10T428/31663

摘要： Provided are a composition for forming film which can form porous film excelling in dielectric constant, adhesiveness, uniformity of the film, mechanical strength and having low hygroscopicity; porous film and a method for forming the film; and a high-performing and highly reliable semiconductor device comprising the porous film inside. More specifically, provided is a composition for forming porous film, the composition comprising siloxane polymer and one or more quaternary ammonium salts represented by following formula (1) or (2): [(R1)4N]+[R2X]−  (1) Hk[(R1)4N]m+Yn−  (2) wherein X represents CO2, OSO3 or SO3; Y represents SO4, SO3, CO3, O2C—CO2, NO3 or NO2; and k is 0 or 1, m is 1 or 2 and n is 1 or 2 in proviso that n=1 requires k=0 and m=1, and n=2 requires k=0 and m=2, or k=1 and m=1.

摘要翻译： 提供一种形成膜的组合物，其可以形成介电常数，粘合性，膜均匀性，机械强度和吸湿性低的多孔膜; 多孔膜和形成膜的方法; 以及内部具有多孔膜的高性能，高可靠性的半导体装置。 更具体地说，提供了一种用于形成多孔膜的组合物，该组合物包含硅氧烷聚合物和一种或多种由下式（1）或（2）表示的季铵盐：<？在线公式描述=“在线式 “end =”lead“？> [（R＆lt; 1＆lt; 1＆gt;）＆lt; 4＆lt; N＆gt;＆lt; （1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end = “铅”？> k k k>>>>>> / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / （2）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中X表示CO 2 2， OSO 3或SO 3 3; Y表示SO 4，SO 3，CO 3，O 2，CO 2， 3，NO 3或NO 2; 并且k为0或1，m为1或2，n为1或2，条件是n = 1需要k = 0且m = 1，n = 2需要k = 0且m = 2，或k = 1 m = 1。

公开(公告)号：US07132473B2

公开(公告)日：2006-11-07

申请号：US10706862

申请日：2003-11-12

申请人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Yoshitaka Hamada ,  Takeshi Asano ,  Motoaki Iwabuchi ,  Hideo Nakagawa ,  Masaru Sasago

发明人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Yoshitaka Hamada ,  Takeshi Asano ,  Motoaki Iwabuchi ,  Hideo Nakagawa ,  Masaru Sasago

IPC分类号： C08G77/04 ,  C09D183/04

CPC分类号： C09D183/14 ,  C08G77/08 ,  C08K5/19 ,  C09D183/04 ,  C23C18/1212 ,  C23C18/122 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/31695 ,  Y10T428/31663

摘要： Provided are a composition for forming film which can form porous film excelling in dielectric constant, adhesiveness, uniformity of the film, mechanical strength and having low hygroscopicity; porous film and a method for forming the film; and a high-performing and highly reliable semiconductor device comprising the porous film inside. More specifically, provided is a composition for forming porous film, the composition comprising siloxane polymer and one or more quaternary ammonium salts represented by following formula (1) or (2): [(R1)4N]+[R2X]−  (1) Hk[(R1)4N]m+YV−  (2) wherein X represents CO2, OSO3 or SO3; Y represents SO4, SO3, CO3, O2C—CO2, NO3 or NO2; and k is 0 or 1, m is 1 or 2 and n is 1 or 2 in proviso that n=1 requires k=0 and m=1, and n=2 requires k=0 and m=2, or k=1 and m=1.

摘要翻译： 提供一种形成膜的组合物，其可以形成介电常数，粘合性，膜均匀性，机械强度和吸湿性低的多孔膜; 多孔膜和形成膜的方法; 以及内部具有多孔膜的高性能，高可靠性的半导体装置。 更具体地说，提供了一种用于形成多孔膜的组合物，该组合物包含硅氧烷聚合物和一种或多种由下式（1）或（2）表示的季铵盐：<？在线公式描述=“在线式 “end =”lead“？> [（R＆lt; 1＆lt; 1＆gt;）＆lt; 4＆lt; N＆gt;＆lt; （1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end = “铅”？> k k k>>>>>> / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / （2）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中X表示CO 2， OSO 3或SO 3 3; Y表示SO 4，SO 3，CO 3，O 2，CO 2， 3，NO 3或NO 2; 并且k为0或1，m为1或2，n为1或2，条件是n = 1需要k = 0且m = 1，n = 2需要k = 0且m = 2或k = 1 m = 1。

公开(公告)号：US07402621B2

公开(公告)日：2008-07-22

申请号：US11041780

申请日：2005-01-24

申请人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Yoshitaka Hamada ,  Takeshi Anaso ,  Motoaki Iwabuchi ,  Masaru Sasago ,  Hideo Nakagawa

发明人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Yoshitaka Hamada ,  Takeshi Anaso ,  Motoaki Iwabuchi ,  Masaru Sasago ,  Hideo Nakagawa

IPC分类号： C08G77/06

CPC分类号： H01L21/02126 ,  C08G77/06 ,  C08G77/08 ,  C09D183/02 ,  C09D183/04 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695

摘要： The invention provides a coating solution for forming a porous film having excellent mechanical strength and dielectric properties and for easily forming a film with a freely controlled film thickness in an ordinarily employed method in semiconductor process. More specifically, provided are a method for preparing a porous-film-forming composition comprising steps of preparing polysiloxane, silica or zeolite particles (Component A), imparting crosslinkability to Component A, and temporarily terminating the crosslinkability; and a porous-film-forming composition obtainable in this method. In addition, provided is a method of forming a porous film comprising steps of preparing a porous-film-forming composition by preparing Component A, imparting crosslinkability to Component A and adding a crosslinkability inhibitor to temporarily terminate the crosslinkability; applying the porous-film-forming composition onto a substrate to form a film, drying the film, crosslinking the particles along with removing the crosslinkability inhibitor by heating the dried film.

摘要翻译： 本发明提供一种用于形成具有优异的机械强度和介电性能的多孔膜的涂布溶液，并且在半导体工艺中通常采用的方法容易地形成具有自由控制的膜厚度的膜。 更具体地说，提供了制备多孔膜形成组合物的方法，其包括制备聚硅氧烷，二氧化硅或沸石颗粒（组分A）的步骤，赋予组分A交联性，并暂时终止交联性; 和通过该方法得到的多孔膜形成组合物。 此外，提供了形成多孔膜的方法，其包括通过制备组分A制备多孔膜形成组合物，赋予组分A交联性并加入交联性抑制剂以暂时终止交联性; 将多孔膜形成组合物施加到基材上以形成膜，干燥膜，使颗粒交联，同时通过加热干燥膜除去交联性抑制剂。

公开(公告)号：US20050165197A1

公开(公告)日：2005-07-28

申请号：US11041780

申请日：2005-01-24

申请人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Yoshitaka Hamada ,  Takeshi Anaso ,  Motoaki Iwabuchi ,  Masaru Sasago ,  Hideo Nakagawa

发明人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Yoshitaka Hamada ,  Takeshi Anaso ,  Motoaki Iwabuchi ,  Masaru Sasago ,  Hideo Nakagawa

IPC分类号： C04B38/00 ,  C01B33/12 ,  C08G77/06 ,  C08G77/08 ,  C09D183/02 ,  C09D183/04 ,  H01L21/316 ,  H01L21/768 ,  C08G77/20

CPC分类号： H01L21/02126 ,  C08G77/06 ,  C08G77/08 ,  C09D183/02 ,  C09D183/04 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695

摘要： The invention provides a coating solution for forming a porous film having excellent mechanical strength and dielectric properties and for easily forming a film with a freely controlled film thickness in an ordinarily employed method in semiconductor process. More specifically, provided are a method for preparing a porous-film-forming composition comprising steps of preparing polysiloxane, silica or zeolite particles (Component A), imparting crosslinkability to Component A, and temporarily terminating the crosslinkability; and a porous-film-forming composition obtainable in this method. In addition, provided is a method of forming a porous film comprising steps of preparing a porous-film-forming composition by preparing Component A, imparting crosslinkability to Component A and adding a crosslinkability inhibitor to temporarily terminate the crosslinkability; applying the porous-film-forming composition onto a substrate to form a film, drying the film, crosslinking the particles along with removing the crosslinkability inhibitor by heating the dried film.

摘要翻译： 本发明提供一种用于形成具有优异的机械强度和介电性能的多孔膜的涂布溶液，并且在半导体工艺中通常采用的方法容易地形成具有自由控制的膜厚度的膜。 更具体地说，提供了制备多孔膜形成组合物的方法，其包括制备聚硅氧烷，二氧化硅或沸石颗粒（组分A）的步骤，赋予组分A交联性，并暂时终止交联性; 和通过该方法得到的多孔膜形成组合物。 此外，提供了形成多孔膜的方法，其包括通过制备组分A制备多孔膜形成组合物，赋予组分A交联性并添加交联性抑制剂以暂时终止交联性的步骤; 将多孔膜形成组合物施加到基材上以形成膜，干燥膜，使颗粒交联，同时通过加热干燥膜除去交联性抑制剂。

公开(公告)号：US07202013B2

公开(公告)日：2007-04-10

申请号：US10858997

申请日：2004-06-02

申请人： Tsutomu Ogihara ,  Takeshi Asano ,  Motoaki Iwabuchi ,  Fujio Yagihashi

发明人： Tsutomu Ogihara ,  Takeshi Asano ,  Motoaki Iwabuchi ,  Fujio Yagihashi

IPC分类号： G03C1/73

CPC分类号： G03F7/091 ,  C09D183/04 ,  G03F7/0045 ,  G03F7/0757 ,  Y10T428/31663

摘要： It is an object of the present invention to provide a material for an antireflective film that has high etching selectivity with respect to the resist, that is, that has a faster etching speed than the resist, a pattern formation method for forming an antireflective film layer on a substrate using this antireflective film material, and a pattern formation method using this antireflective film as a hard mask for substrate processing.The present invention provides an antireflective film material comprising a polymer (A) comprising copolymerized repeating units expressed by the Formula (1) and/or the Formula (2), an organic solvent (B), an acid generator (C) and an optional crosslinking agent (D)

摘要翻译： 本发明的目的是提供一种抗蚀剂材料，该防反射膜相对于抗蚀剂具有高蚀刻选择性，即具有比抗蚀剂更快的蚀刻速度，用于形成抗反射膜层的图案形成方法 在使用该防反射膜材料的基板上，使用该抗反射膜作为基板处理的硬掩模的图案形成方法。

公开(公告)号：US07303785B2

公开(公告)日：2007-12-04

申请号：US10859531

申请日：2004-06-02

申请人： Tsutomu Ogihara ,  Takeshi Asano ,  Motoaki Iwabuchi ,  Fujio Yagihashi

发明人： Tsutomu Ogihara ,  Takeshi Asano ,  Motoaki Iwabuchi ,  Fujio Yagihashi

IPC分类号： B05D3/02 ,  C08G77/16

CPC分类号： C09D183/04 ,  G03F7/0757 ,  G03F7/091 ,  H01L21/0276 ,  Y10T428/31663

摘要： It is an object of the present invention to provide a material for an antireflective film that has high etching selectivity with respect to the resist, that is, that has a faster etching speed than the resist, a pattern formation method for forming an antireflective film layer on a substrate using this antireflective film material, and a pattern formation method using this antireflective film as a hard mask for substrate processing. The present invention provides a silicone resin for preventing reflection comprising an organic group comprising a carbon-oxygen single bond and/or a carbon-oxygen double bond; a light-absorbing group; and a silicon atom whose terminal end or ends are Si—OH and/or Si—OR. It also provides an antireflective film material comprising this silicone resin (A) for preventing reflection film, an organic solvent (B) and an acid generator (C).

摘要翻译： 本发明的目的是提供一种抗蚀剂材料，该防反射膜相对于抗蚀剂具有高蚀刻选择性，即具有比抗蚀剂更快的蚀刻速度，用于形成抗反射膜层的图案形成方法 在使用该防反射膜材料的基板上，使用该抗反射膜作为基板处理的硬掩模的图案形成方法。 本发明提供一种防止反射的硅树脂，其包含含有碳 - 氧单键和/或碳 - 氧双键的有机基团; 光吸收组; 以及其末端或末端为Si-OH和/或Si-OR的硅原子。 还提供一种抗反射膜材料，其包含用于防止反射膜的有机硅树脂（A），有机溶剂（B）和酸产生剂（C）。

公开(公告)号：US07309722B2

公开(公告)日：2007-12-18

申请号：US10703374

申请日：2003-11-07

申请人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Hideo Nakagawa ,  Masaru Sasago

发明人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Hideo Nakagawa ,  Masaru Sasago

IPC分类号： C09D183/04 ,  C08K3/22

CPC分类号： H01L23/5222 ,  C08K3/34 ,  C08L83/02 ,  C09D183/04 ,  H01L23/53228 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/249953 ,  Y10T428/31663 ,  H01L2924/00

摘要： The present invention provides a composition for film formation which can form a porous film that excels in dielectric properties, adhesion, film consistency and mechanical strength, and that is easily thinned; a porous film and a method for forming the same, and a high-performing and highly reliable semiconductor device which contains the porous film inside. More specifically, the composition for forming a porous film comprises a solution containing an amorphous polymer which is obtained by hydrolyzing and condensing at least one silane compound expressed by the general formula (R1)nSi(OR2)4−n, and a zeolite sol which is formed by using a quaternary ammonium hydroxide. The method for forming a porous film comprises a coating step for coating the composition for forming a porous film; a subsequent drying step; and a porousness forming step.

摘要翻译： 本发明提供一种成膜用组合物，其可以形成介电性，粘合性，膜稠度和机械强度优异且容易变薄的多孔膜; 多孔膜及其形成方法，以及内部含有多孔膜的高性能和高可靠性的半导体器件。 更具体地，用于形成多孔膜的组合物包括含有无定形聚合物的溶液，其通过水解和缩合由通式（R 1）2表示的至少一种硅烷化合物而获得， （OR 2）4-n N，以及通过使用氢氧化季铵形成的沸石溶胶。 形成多孔膜的方法包括用于涂覆用于形成多孔膜的组合物的涂布步骤; 随后的干燥步骤; 和多孔性形成步骤。

公开(公告)号：US07205338B2

公开(公告)日：2007-04-17

申请号：US10796170

申请日：2004-03-09

申请人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Hideo Nakagawa ,  Masaru Sasago

发明人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Hideo Nakagawa ,  Masaru Sasago

IPC分类号： C08G77/50 ,  C08L83/14 ,  C01B33/113

CPC分类号： C08G77/50 ,  C08J5/18 ,  C08J2383/04 ,  C09D183/14 ,  Y10T428/31663

摘要： Provided is a coating liquid for forming a porous film having desirably controlled thickness and having excellent dielectric and mechanical properties, using the conventional semiconductor process. Specifically, provided is a composition for forming a porous film comprising a condensation product and an organic solvent wherein the condensation product is obtained by hydrolysis and condensation, at presence of a basic catalyst, ofone or more silane compounds represented by formula (1): R1kSi(OR2)4-k,and one or more crosslinking agents represented by formula (2): {Xj(Y)3-jSi-(L)m-}nMZ4-n.Moreover, a method for manufacturing a porous film comprising steps of applying said composition so as to form a film, drying the film and heating the dried film so as to hardent the film, and others are provided.

摘要翻译： 提供一种用于形成具有期望的控制厚度并且具有优异的介电和机械性能的多孔膜的涂布液，使用常规的半导体工艺。 具体地，提供了一种用于形成多孔膜的组合物，其包含缩合产物和有机溶剂，其中缩合产物通过水解和缩合在碱性催化剂存在下获得