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23 条记录 (耗时 0.043 秒)

    Semiconductor device having metal plug and method of forming the same
    11.
    发明授权
    Semiconductor device having metal plug and method of forming the same 有权
    具有金属塞的半导体装置及其形成方法

    公开(公告)号：US09153499B2

    公开(公告)日：2015-10-06

    申请号：US13425906

    申请日：2012-03-21

    申请人： Wan-Don Kim ,  Seung-Hwan Lee ,  Beom-Seok Kim ,  Kyu-Ho Cho ,  Oh-Seong Kwon ,  Geun-Kyu Choi ,  Ji-Eun Lim ,  Yong-Suk Tak

    发明人： Wan-Don Kim ,  Seung-Hwan Lee ,  Beom-Seok Kim ,  Kyu-Ho Cho ,  Oh-Seong Kwon ,  Geun-Kyu Choi ,  Ji-Eun Lim ,  Yong-Suk Tak

    IPC分类号： H01L27/06 ,  H01L21/8234

    CPC分类号： H01L21/823475 ,  H01L21/823456

    摘要： Provided is a semiconductor device including first, second and third source/drain regions. A first conductive plug in contact with the first source/drain regions, having a first width and a first height, and including a first material is provided. An interlayer insulating layer covering the first conductive plug and the substrate is disposed. A second conductive plug vertically penetrating the interlayer insulating layer to be in contact with the second source/drain regions, having a second width and a second height, and including a second material is provided. A third conductive plug vertically penetrating the interlayer insulating layer to be in contact with the third source/drain regions, having a third width and a third height, and including a third material is disposed. The second material includes a noble metal, a noble metal oxide or a perovskite-based conductive oxide.

    摘要翻译： 提供了包括第一，第二和第三源极/漏极区域的半导体器件。 提供了与第一源/漏区接触的第一导电插塞，具有第一宽度和第一高度，并且包括第一材料。 设置覆盖第一导电插塞和基板的层间绝缘层。 提供垂直穿过层间绝缘层以与具有第二宽度和第二高度并且包括第二材料的第二源/漏区接触的第二导电插塞。 设置垂直贯穿层间绝缘层与第三源极/漏极区域接触的第三导电插塞，具有第三宽度和第三高度，并且包括第三材料。 第二种材料包括贵金属，贵金属氧化物或钙钛矿型导电氧化物。

    Scheduling method and system for guaranteeing real-time service quality of WiBro CPE
    13.
    发明申请
    Scheduling method and system for guaranteeing real-time service quality of WiBro CPE 失效
    用于保证WiBro CPE实时服务质量的调度方法和系统

    公开(公告)号：US20080225742A1

    公开(公告)日：2008-09-18

    申请号：US11902336

    申请日：2007-09-20

    申请人： Kyu-Ho Cho ,  Deug-Hyeon Ryu ,  Ki-Young Lim

    发明人： Kyu-Ho Cho ,  Deug-Hyeon Ryu ,  Ki-Young Lim

    IPC分类号： G01R31/08

    CPC分类号： H04L47/10 ,  H04L41/0896 ,  H04L47/13 ,  H04L47/14 ,  H04L47/2416 ,  H04L47/27 ,  H04L65/608 ,  H04L65/80 ,  H04W28/14

    摘要： Provided are a scheduling method and apparatus for guaranteeing real-time service quality of Wireless Broadband (WiBro) customer premises equipment (CPE). The scheduling apparatus includes: a real-time protocol (RTP) packet monitoring unit for monitoring an RTP packet passing through a local area network (LAN) section and detecting a bandwidth of real-time service; and a queue managing unit for determining a window size corresponding to the bandwidth of real-time service checked by the RTP packet monitoring unit and generating/changing a real-time service queue. The scheduling method and apparatus monitor an RTP packet and adjust a real-time service queue, thereby ensuring real-time service quality of terminals.

    摘要翻译： 提供了一种用于保证无线宽带（WiBro）用户驻地设备（CPE）的实时服务质量的调度方法和装置。 调度装置包括：实时协议（RTP）分组监视单元，用于监视通过局域网（LAN）部分的RTP分组并检测实时业务的带宽; 以及队列管理单元，用于确定与RTP分组监视单元检查的实时服务的带宽相对应的窗口大小，并生成/改变实时服务队列。 调度方法和设备监控RTP分组并调整实时业务队列，从而保证终端的实时业务质量。

    SEMICONDUCTOR DEVICE HAVING METAL PLUG AND METHOD OF FORMING THE SAME
    15.
    发明申请
    SEMICONDUCTOR DEVICE HAVING METAL PLUG AND METHOD OF FORMING THE SAME 有权
    具有金属插件的半导体器件及其形成方法

    公开(公告)号：US20120299072A1

    公开(公告)日：2012-11-29

    申请号：US13425906

    申请日：2012-03-21

    申请人： WAN-DON KIM ,  Seung-Hwan Lee ,  Beom-Seok Kim ,  Kyu-Ho Cho ,  Oh-Seong Kwon ,  Geun-Kyu Choi ,  Ji-Eun Lim ,  Yong-Suk Tak

    发明人： WAN-DON KIM ,  Seung-Hwan Lee ,  Beom-Seok Kim ,  Kyu-Ho Cho ,  Oh-Seong Kwon ,  Geun-Kyu Choi ,  Ji-Eun Lim ,  Yong-Suk Tak

    IPC分类号： H01L27/06

    CPC分类号： H01L21/823475 ,  H01L21/823456

    摘要： Provided is a semiconductor device including first, second and third source/drain regions. A first conductive plug in contact with the first source/drain regions, having a first width and a first height, and including a first material is provided. An interlayer insulating layer covering the first conductive plug and the substrate is disposed. A second conductive plug vertically penetrating the interlayer insulating layer to be in contact with the second source/drain regions, having a second width and a second height, and including a second material is provided. A third conductive plug vertically penetrating the interlayer insulating layer to be in contact with the third source/drain regions, having a third width and a third height, and including a third material is disposed. The second material includes a noble metal, a noble metal oxide or a perovskite-based conductive oxide.

    摘要翻译： 提供了包括第一，第二和第三源极/漏极区域的半导体器件。 提供了与第一源/漏区接触的第一导电插塞，具有第一宽度和第一高度，并且包括第一材料。 设置覆盖第一导电插塞和基板的层间绝缘层。 提供垂直穿过层间绝缘层以与具有第二宽度和第二高度并且包括第二材料的第二源/漏区接触的第二导电插塞。 设置垂直贯穿层间绝缘层与第三源极/漏极区域接触的第三导电插塞，具有第三宽度和第三高度，并且包括第三材料。 第二种材料包括贵金属，贵金属氧化物或钙钛矿型导电氧化物。

    CAPACITOR
    17.
    发明申请
    CAPACITOR 审中-公开
    电容器

    公开(公告)号：US20110242727A1

    公开(公告)日：2011-10-06

    申请号：US13076950

    申请日：2011-03-31

    申请人： Wan-Don KIM ,  Beom-Seok Kim ,  Jong-Cheol Lee ,  Kyu-Ho Cho ,  Jin-Yong Kim ,  Oh-Seong Kwon ,  Yong-Suk Tak

    发明人： Wan-Don KIM ,  Beom-Seok Kim ,  Jong-Cheol Lee ,  Kyu-Ho Cho ,  Jin-Yong Kim ,  Oh-Seong Kwon ,  Yong-Suk Tak

    IPC分类号： H01G4/06

    CPC分类号： H01G4/1209 ,  H01G4/002

    摘要： A capacitor may include a lower electrode structure, a dielectric layer and an upper electrode structure. The lower electrode structure may include a first lower pattern, a first deformation-preventing layer pattern and a second lower pattern. The first lower pattern may have a cylindrical shape. The first deformation-preventing layer pattern may be formed on an inner surface of the first lower pattern. The second lower pattern may be formed on the first deformation-preventing layer pattern. The dielectric layer may be formed on the lower electrode structure. The upper electrode structure may be formed on the dielectric layer. Thus, the capacitor may have a high capacitance and improved electrical characteristics.

    摘要翻译： 电容器可以包括下电极结构，电介质层和上电极结构。 下部电极结构可以包括第一下部图案，第一防变形图案图案和第二下部图案。 第一下部图案可以具有圆柱形形状。 第一防变形图案图案可以形成在第一下图案的内表面上。 第二下图案可以形成在第一抗变形层图案上。 电介质层可以形成在下电极结构上。 上电极结构可以形成在电介质层上。 因此，电容器可以具有高电容和改善的电特性。

    Scheduling method and system for guaranteeing real-time service quality of WiBro CPE
    18.
    发明授权
    Scheduling method and system for guaranteeing real-time service quality of WiBro CPE 失效
    用于保证WiBro CPE实时服务质量的调度方法和系统

    公开(公告)号：US07688752B2

    公开(公告)日：2010-03-30

    申请号：US11902336

    申请日：2007-09-20

    申请人： Kyu-Ho Cho ,  Deung-Hyeon Ryu ,  Ki-Young Lim

    发明人： Kyu-Ho Cho ,  Deung-Hyeon Ryu ,  Ki-Young Lim

    IPC分类号： H04W4/00

    CPC分类号： H04L47/10 ,  H04L41/0896 ,  H04L47/13 ,  H04L47/14 ,  H04L47/2416 ,  H04L47/27 ,  H04L65/608 ,  H04L65/80 ,  H04W28/14

    摘要： Provided are a scheduling method and apparatus for guaranteeing real-time service quality of Wireless Broadband (WiBro) customer premises equipment (CPE). The scheduling apparatus includes: a real-time protocol (RTP) packet monitoring unit for monitoring an RTP packet passing through a local area network (LAN) section and detecting a bandwidth of real-time service; and a queue managing unit for determining a window size corresponding to the bandwidth of real-time service checked by the RTP packet monitoring unit and generating/changing a real-time service queue. The scheduling method and apparatus monitor an RTP packet and adjust a real-time service queue, thereby ensuring real-time service quality of terminals.

    摘要翻译： 提供了一种用于保证无线宽带（WiBro）用户驻地设备（CPE）的实时服务质量的调度方法和装置。 调度装置包括：实时协议（RTP）分组监视单元，用于监视通过局域网（LAN）部分的RTP分组并检测实时业务的带宽; 以及队列管理单元，用于确定与RTP分组监视单元检查的实时服务的带宽相对应的窗口大小，并生成/改变实时服务队列。 调度方法和设备监控RTP分组并调整实时业务队列，从而保证终端的实时业务质量。