公开(公告)号：US20110057233A1

公开(公告)日：2011-03-10

申请号：US12591409

申请日：2009-11-18

申请人： Ki Yeol Park ,  Jung Hee Lee ,  Ki Won Kim ,  Young Hwan Park ,  Woo Chul Jeon

发明人： Ki Yeol Park ,  Jung Hee Lee ,  Ki Won Kim ,  Young Hwan Park ,  Woo Chul Jeon

IPC分类号： H01L29/778 ,  H01L29/772 ,  H01L21/335

CPC分类号： H01L29/7786 ,  H01L29/1033 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7788

摘要： The present invention provides a semiconductor component. The semiconductor component in accordance with the present invention includes a lower layer including a low resistance layer and a high resistance layer with higher resistivity than the low resistance layer while surrounding a lateral surface of the low resistance layer; a source electrode disposed on a front surface of the high resistance layer; a gate structure disposed on a front surface of the low resistance layer; a drain structure disposed on a rear surface of the low resistance layer; and a base substrate surrounding the drain structure on a rear surface of the high resistance layer.

摘要翻译： 本发明提供一种半导体元件。 根据本发明的半导体部件包括具有低电阻层和比低电阻层高的电阻率的低电阻层的下层，同时围绕低电阻层的侧表面; 设置在所述高电阻层的前表面上的源电极; 栅极结构，其设置在所述低电阻层的前表面上; 排列结构，设置在所述低电阻层的后表面上; 以及在高电阻层的后表面上包围漏极结构的基底基板。

公开(公告)号：US08896026B2

公开(公告)日：2014-11-25

申请号：US13137311

申请日：2011-08-04

申请人： Woo Chul Jeon ,  Ki Yeol Park ,  Young Hwan Park

发明人： Woo Chul Jeon ,  Ki Yeol Park ,  Young Hwan Park

IPC分类号： H01L31/072 ,  H01L31/109

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/475 ,  H01L29/66462

摘要： Provided is a nitride semiconductor device including: a nitride semiconductor layer over a substrate wherein the nitride semiconductor has a two-dimensional electron gas (2DEG) channel inside; a drain electrode in ohmic contact with the nitride semiconductor layer; a source electrode in Schottky contact with the nitride semiconductor layer wherein the source electrode is spaced apart from the drain electrode; a dielectric layer formed on the nitride semiconductor layer between the drain electrode and the source electrode and on at least a portion of the source electrode; and a gate electrode disposed on the dielectric layer to be spaced apart from the drain electrode, wherein a portion of the gate electrode is formed over a drain-side edge portion of the source electrode with the dielectric layer interposed therebetween, and a manufacturing method thereof.

摘要翻译： 提供一种氮化物半导体器件，其包括：氮化物半导体层，其在氮化物半导体内部具有二维电子气体（2DEG）通道的衬底上; 与氮化物半导体层欧姆接触的漏电极; 与氮化物半导体层肖特基接触的源电极，其中源电极与漏电极间隔开; 形成在所述氮化物半导体层上的所述漏电极和所述源电极之间以及所述源电极的至少一部分上的电介质层; 以及设置在所述电介质层上以与所述漏极间隔开的栅电极，其中所述栅电极的一部分形成在所述源电极的漏极侧边缘部分之间，并且介电层插入其间;以及其制造方法 。

公开(公告)号：US08637902B2

公开(公告)日：2014-01-28

申请号：US12907653

申请日：2010-10-19

申请人： Ki Yeol Park ,  Woo Chul Jeon ,  Young Hwan Park ,  Jung Hee Lee

发明人： Ki Yeol Park ,  Woo Chul Jeon ,  Young Hwan Park ,  Jung Hee Lee

IPC分类号： H01L29/737 ,  H01L29/778

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/41725 ,  H01L29/66462

摘要： There is provided a semiconductor device having a High Electron Mobility Transistor (HEMT) structure allowing for enhanced performance and a method of manufacturing the same. The semiconductor device includes a base substrate; a semiconductor layer provided on the base substrate; a source electrode, a gate electrode and a drain electrode provided on the semiconductor layer to be spaced apart from one another; and an ohmic-contact layer partially provided at an interface between the drain electrode and the semiconductor layer.

摘要翻译： 提供了具有允许增强性能的高电子迁移率晶体管（HEMT）结构的半导体器件及其制造方法。 半导体器件包括：基底; 设置在所述基底基板上的半导体层; 源电极，栅电极和漏极，设置在所述半导体层上以彼此间隔开; 以及部分地设置在漏电极和半导体层之间的界面处的欧姆接触层。

公开(公告)号：US08384130B2

公开(公告)日：2013-02-26

申请号：US13137291

申请日：2011-08-03

申请人： Woo Chul Jeon ,  Ki Yeol Park ,  Young Hwan Park

发明人： Woo Chul Jeon ,  Ki Yeol Park ,  Young Hwan Park

IPC分类号： H01L29/739 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L29/66431 ,  H01L29/2003 ,  H01L29/404 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7787

摘要： Provided is a nitride semiconductor device including: a nitride semiconductor layer over a substrate wherein the nitride semiconductor has a two-dimensional electron gas (2DEG) channel inside; a drain electrode in ohmic contact with the nitride semiconductor layer; a source electrode spaced apart from the drain electrode, in Schottky contact with the nitride semiconductor layer, and having an ohmic pattern in ohmic contact with the nitride semiconductor layer inside; a dielectric layer formed on the nitride semiconductor layer between the drain electrode and the source electrode and on at least a portion of the source electrode; and a gate electrode disposed on the dielectric layer to be spaced apart from the drain electrode, wherein a portion of the gate electrode is formed over a drain-side edge portion of the source electrode with the dielectric layer interposed therebetween, and a manufacturing method thereof.

摘要翻译： 提供一种氮化物半导体器件，其包括：氮化物半导体层，其在氮化物半导体内部具有二维电子气体（2DEG）通道的衬底上; 与氮化物半导体层欧姆接触的漏电极; 源极与漏极间隔开，与氮化物半导体层肖特基接触，并且具有与内部的氮化物半导体层欧姆接触的欧姆图案; 形成在所述氮化物半导体层上的所述漏电极和所述源电极之间以及所述源电极的至少一部分上的电介质层; 以及设置在所述电介质层上以与所述漏极间隔开的栅电极，其中所述栅电极的一部分形成在所述源电极的漏极侧边缘部分之间，并且介电层插入其间;以及其制造方法 。

公开(公告)号：US08319309B2

公开(公告)日：2012-11-27

申请号：US12654936

申请日：2010-01-08

申请人： Woo Chul Jeon ,  Jung Hee Lee ,  Young Hwan Park ,  Ki Yeol Park

发明人： Woo Chul Jeon ,  Jung Hee Lee ,  Young Hwan Park ,  Ki Yeol Park

IPC分类号： H01L27/095

CPC分类号： H01L29/872 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/475 ,  H01L29/66212 ,  H01L29/7787

摘要： The present invention provides a semiconductor device including: a base substrate; a semiconductor layer which is disposed on the base substrate and has a 2-Dimensional Electron Gas (2DEG) formed therewithin; a first ohmic electrode disposed on a central region of the semiconductor layer; a second ohmic electrode which is formed on the edge regions of the semiconductor layer in such a manner to be disposed to be spaced apart from the first ohmic electrodes, and have a ring shape surrounding the first ohmic electrode; and a Schottky electrode part which is formed on the central region to cover the first ohmic electrode and is formed to be spaced apart from the second ohmic electrode.

摘要翻译： 本发明提供一种半导体器件，包括：基底; 半导体层，其设置在所述基底基板上并具有在其中形成的二维电子气体（2DEG）; 设置在所述半导体层的中心区域上的第一欧姆电极; 形成在所述半导体层的边缘区域上的第二欧姆电极，以与所述第一欧姆电极间隔开的方式设置，并且具有环绕所述第一欧姆电极的环形形状; 以及形成在中心区域上以覆盖第一欧姆电极并形成为与第二欧姆电极间隔开的肖特基电极部分。

公开(公告)号：US20120267637A1

公开(公告)日：2012-10-25

申请号：US13137310

申请日：2011-08-04

申请人： Woo Chul Jeon ,  Ki Yeol Park ,  Young Hwan Park

发明人： Woo Chul Jeon ,  Ki Yeol Park ,  Young Hwan Park

IPC分类号： H01L29/12 ,  H01L29/778 ,  H01L21/335

CPC分类号： H01L29/7787 ,  H01L29/0607 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/42376 ,  H01L29/66462

摘要： Provided is a nitride semiconductor device including: a nitride semiconductor layer over a substrate wherein the nitride semiconductor has a two-dimensional electron gas (2DEG) channel inside; a drain electrode in ohmic contact with the nitride semiconductor layer; a source electrode in Schottky contact with the nitride semiconductor layer wherein the source electrode is spaced apart from the drain electrode; a floating guard ring in Schottky contact with the nitride semiconductor layer between the drain electrode and the source electrode; a dielectric layer formed on the nitride semiconductor layer between the drain electrode and the source electrode and on at least a portion of the source electrode wherein the dielectric layer is applied to the floating guard ring between the drain electrode and the source electrode; and a gate electrode formed on the dielectric layer to be spaced apart from the drain electrode, wherein a portion of the gate electrode is formed over a drain-side edge portion of the source electrode with the dielectric layer interposed therebetween, and a manufacturing method thereof.

摘要翻译： 提供一种氮化物半导体器件，其包括：氮化物半导体层，其在氮化物半导体内部具有二维电子气体（2DEG）通道的衬底上; 与氮化物半导体层欧姆接触的漏电极; 与氮化物半导体层肖特基接触的源电极，其中源电极与漏电极间隔开; 与漏电极和源电极之间的氮化物半导体层肖特基接触的浮动保护环; 形成在所述氮化物半导体层上的所述漏电极和所述源电极之间以及所述源电极的至少一部分上的所述电介质层，其中所述电介质层被施加到所述漏电极和所述源电极之间的所述浮动保护环; 以及形成在与所述漏电极间隔开的所述电介质层上的栅电极，其中，所述栅电极的一部分形成在所述源电极的漏极侧边缘部分之间，并且所述栅电极的制造方法 。

公开(公告)号：US20110233612A1

公开(公告)日：2011-09-29

申请号：US12907653

申请日：2010-10-19

申请人： Ki Yeol PARK ,  Woo Chul Jeon ,  Young Hwan Park ,  Jung Hee Lee

发明人： Ki Yeol PARK ,  Woo Chul Jeon ,  Young Hwan Park ,  Jung Hee Lee

IPC分类号： H01L29/778 ,  H01L21/335

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/41725 ,  H01L29/66462

摘要： There is provided a semiconductor device having a High Electron Mobility Transistor (HEMT) structure allowing for enhanced performance and a method of manufacturing the same. The semiconductor device includes a base substrate; a semiconductor layer provided on the base substrate; a source electrode, a gate electrode and a drain electrode provided on the semiconductor layer to be spaced apart from one another; and an ohmic-contact layer partially provided at an interface between the drain electrode and the semiconductor layer.

摘要翻译： 提供了具有允许增强性能的高电子迁移率晶体管（HEMT）结构的半导体器件及其制造方法。 半导体器件包括：基底; 设置在所述基底基板上的半导体层; 源电极，栅电极和漏极，设置在所述半导体层上以彼此间隔开; 以及部分地设置在漏电极和半导体层之间的界面处的欧姆接触层。

公开(公告)号：US20110057234A1

公开(公告)日：2011-03-10

申请号：US12654940

申请日：2010-01-08

申请人： Woo Chul Jeon ,  Jung Hee Lee ,  Young Hwan Park ,  Ki Yeol Park

发明人： Woo Chul Jeon ,  Jung Hee Lee ,  Young Hwan Park ,  Ki Yeol Park

IPC分类号： H01L29/778 ,  H01L21/335

CPC分类号： H01L29/66007 ,  H01L21/02521 ,  H01L29/0692 ,  H01L29/2003 ,  H01L29/66143 ,  H01L29/872

摘要： Disclosed is a semiconductor device including: a base substrate; a semiconductor layer disposed on the base substrate; an ohmic electrode part which has ohmic electrode lines disposed in a first direction, on the semiconductor layer; and a Schottky electrode part which is disposed to be spaced apart from the ohmic electrode lines on the semiconductor layer and includes Schottky electrode lines disposed in the first direction, wherein the Schottky electrode lines and the ohmic electrode lines are alternately disposed in parallel, and the ohmic electrode part further includes first ohmic electrodes covered by the Schottky electrode lines on the semiconductor layer.

摘要翻译： 公开了一种半导体器件，包括：基底; 设置在所述基底基板上的半导体层; 在所述半导体层上具有沿第一方向设置的欧姆电极线的欧姆电极部; 以及肖特基电极部，其设置为与半导体层上的欧姆电极线间隔开，并且包括沿第一方向设置的肖特基电极线，其中肖特基电极线和欧姆电极线交替地平行设置，并且 欧姆电极部分还包括由半导体层上的肖特基电极线覆盖的第一欧姆电极。

公开(公告)号：US20110057231A1

公开(公告)日：2011-03-10

申请号：US12654897

申请日：2010-01-07

申请人： Woo Chul Jeon ,  Jung Hee Lee ,  Young Hwan Park ,  Ki Yeol Park

发明人： Woo Chul Jeon ,  Jung Hee Lee ,  Young Hwan Park ,  Ki Yeol Park

IPC分类号： H01L29/47 ,  H01L21/20 ,  H01L21/28

CPC分类号： H01L29/0692 ,  H01L29/861 ,  H01L29/872

摘要： The present invention provides a semiconductor device including: a base substrate; a first semiconductor layer disposed on the base substrate; first ohmic electrodes disposed on a central region of the first semiconductor layer; a second ohmic electrode having a ring shape surrounding the first ohmic electrodes, on edge regions of the first semiconductor layer; a second semiconductor layer interposed between the first ohmic electrodes and the first semiconductor layer; and a Schottky electrode part which covers the first ohmic electrodes on the central regions, and is spaced apart from the second ohmic electrode.

摘要翻译： 本发明提供一种半导体器件，包括：基底; 设置在所述基底基板上的第一半导体层; 设置在第一半导体层的中心区域上的第一欧姆电极; 在所述第一半导体层的边缘区域上具有围绕所述第一欧姆电极的环形形状的第二欧姆电极; 插入在所述第一欧姆电极和所述第一半导体层之间的第二半导体层; 以及肖特基电极部件，其覆盖中心区域上的第一欧姆电极，并且与第二欧姆电极间隔开。

公开(公告)号：US08426939B2

公开(公告)日：2013-04-23

申请号：US12654935

申请日：2010-01-08

申请人： Woo Chul Jeon ,  Jung Hee Lee ,  Young Hwan Park ,  Ki Yeol Park

发明人： Woo Chul Jeon ,  Jung Hee Lee ,  Young Hwan Park ,  Ki Yeol Park

IPC分类号： H01L29/739

CPC分类号： H01L29/861 ,  H01L29/417 ,  H01L29/66143 ,  H01L29/872

摘要： The present invention provides a semiconductor device including: a base substrate; a first semiconductor layer which is disposed on the base substrate and has a front surface and a rear surface opposite to the front surface; first ohmic electrodes disposed on the front surface of the first semiconductor layer; a second ohmic electrode disposed on the rear surface of the first semiconductor layer; a second semiconductor layer interposed between the first semiconductor layer and the first ohmic electrodes; and a Schottky electrode part which covers the first ohmic electrodes on the front surface of the first semiconductor layer.

摘要翻译： 本发明提供一种半导体器件，包括：基底; 第一半导体层，其设置在所述基底基板上，并且具有与所述前表面相对的前表面和后表面; 设置在第一半导体层的前表面上的第一欧姆电极; 设置在所述第一半导体层的后表面上的第二欧姆电极; 插入在第一半导体层和第一欧姆电极之间的第二半导体层; 以及肖特基电极部分，其覆盖第一半导体层的前表面上的第一欧姆电极。