公开(公告)号：US07497007B2

公开(公告)日：2009-03-03

申请号：US11181176

申请日：2005-07-14

申请人： Hui-Chuan Wang ,  Tong Zhao ,  Min Li ,  Kunliang Zhang

发明人： Hui-Chuan Wang ,  Tong Zhao ,  Min Li ,  Kunliang Zhang

IPC分类号： G11B5/187

CPC分类号： H01L43/08 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3204 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3281 ,  H01F10/3295 ,  H01F41/303 ,  H01L43/12 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49041 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T29/49067

摘要： A high performance TMR element is fabricated by inserting an oxygen surfactant layer (OSL) between a pinned layer and AlOx tunnel barrier layer in a bottom spin valve configuration. The pinned layer preferably has a SyAP configuration with an outer pinned layer, a Ru coupling layer, and an inner pinned layer comprised of CoFeXBY/CoFeZ wherein x=0 to 70 atomic %, y=0 to 30 atomic %, and z=0 to 100 atomic %. The OSL is formed by treating the CoFez layer with oxygen plasma. The AlOx tunnel barrier has improved uniformity of about 2% across a 6 inch wafer and can be formed from an Al layer as thin as 5 Angstroms. As a result, the Hin value can be decreased by ⅓ to about 32 Oe. A dR/R of 25% and a RA of 3 ohm-cm2 have been achieved for TMR read head applications.

摘要翻译： 通过在底部自旋阀配置中的钉扎层和AlOx隧道势垒层之间插入氧表面活性剂层（OSL）来制造高性能TMR元件。 钉扎层优选具有带外部被钉扎层，Ru耦合层和由CoFeXBY / CoFeZ组成的内部钉扎层的SyAP构型，其中x = 0至70原子％，y = 0至30原子％，z = 0 至100原子％。 通过用氧等离子体处理CoFez层形成OSL。 AlOx隧道势垒在6英寸晶片上提高了约2％的均匀性，并且可以由薄至5埃的Al层形成。 结果，Hin值可以减少1/3至约32Oe。 对于TMR读头应用，已经实现了25％的dR / R和3ohm-cm 2的RA。

公开(公告)号：US20080316657A1

公开(公告)日：2008-12-25

申请号：US11820251

申请日：2007-06-19

申请人： Kunliang Zhang ,  Hui-Chuan Wang ,  Tong Zhao ,  Min Li

发明人： Kunliang Zhang ,  Hui-Chuan Wang ,  Tong Zhao ,  Min Li

IPC分类号： G11B5/127

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  H01L43/08 ,  Y10T428/1114

摘要： An insertion layer is provided between an AFM layer and an AP2 pinned layer in a GMR or TMR element to improve exchange coupling properties by increasing Hex and the Hex/Hc ratio without degrading the MR ratio. The insertion layer may be a 1 to 15 Angstrom thick amorphous magnetic layer comprised of at least one element of Co, Fe, or Ni, and at least one element having an amorphous character selected from B, Zr, Hf, Nb, Ta, Si, or P, or a 1 to 5 Angstrom thick non-magnetic layer comprised of Cu, Ru, Mn, Hf, or Cr. Preferably, the content of the one or more amorphous elements in the amorphous magnetic layer is less than 40 atomic %. Optionally, the insertion layer may be formed within the AP2 pinned layer. Examples of an insertion layer are CoFeB, CoFeZr, CoFeNb, CoFeHf, CoFeNiZr, CoFeNiHf, and CoFeNiNbZr.

摘要翻译： 在GMR或TMR元件中的AFM层和AP2钉扎层之间设置插入层，以通过增加Hex和Hex / Hc比来提高交换耦合性能，而不降低MR比。 插入层可以是由至少一种Co，Fe或Ni元素组成的1至15埃厚的非晶磁性层，以及至少一种具有选自B，Zr，Hf，Nb，Ta，Si ，或P，或由Cu，Ru，Mn，Hf或Cr组成的1〜5埃厚的非磁性层。 优选地，非晶磁性层中的一种或多种非晶质元素的含量小于40原子％。 可选地，插入层可以形成在AP2钉扎层内。 插入层的实例是CoFeB，CoFeZr，CoFeNb，CoFeHf，CoFeNiZr，CoFeNiHf和CoFeNiNbZr。

公开(公告)号：US20080260943A1

公开(公告)日：2008-10-23

申请号：US12214503

申请日：2008-06-19

申请人： Hui-Chuan Wang ,  Min Li ,  Tong Zhao ,  Kunliang Zhang ,  Chyu-Jiuh Torng

发明人： Hui-Chuan Wang ,  Min Li ,  Tong Zhao ,  Kunliang Zhang ,  Chyu-Jiuh Torng

IPC分类号： B05D5/12

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3909 ,  G11B5/3929 ,  G11B2005/3996 ,  Y10T29/49044 ,  Y10T428/11 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1129

摘要： The conventional free layer in a CPP GMR or TMR read head has been replaced by a tri-layer laminate comprising Co rich CoFe, moderately Fe rich NiFe, and heavily Fe rich NiFe. The result is an improved device that has a higher MR ratio than prior art devices, while still maintaining free layer softness and acceptable magnetostriction. A process for manufacturing the device is described.

摘要翻译： CPP GMR或TMR读取头中的常规自由层已经被包含富钴CoFe，中等富Fe的NiFe和大量富Fe NiFe的三层层压体所代替。 结果是具有比现有技术的装置更高的MR比的改进的装置，同时仍然保持自由层柔软性和可接受的磁致伸缩。 描述了用于制造该装置的方法。

公开(公告)号：US20070297103A1

公开(公告)日：2007-12-27

申请号：US11472126

申请日：2006-06-21

申请人： Kunliang Zhang ,  Min Li ,  Yu-Hsia Chen ,  Hui-Chuan Wang ,  Tong Zhao

发明人： Kunliang Zhang ,  Min Li ,  Yu-Hsia Chen ,  Hui-Chuan Wang ,  Tong Zhao

IPC分类号： G11B5/127

CPC分类号： G11B5/3983 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/16 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/183 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： A spin valve structure is disclosed in which an AP1 layer and/or free layer are made of a laminated Heusler alloy having Al or FeCo insertion layers. The ordering temperature of a Heusler alloy such as Co2MnSi is thereby lowered from about 350° C. to 280° C. which becomes practical for spintronics device applications. The insertion layer is 0.5 to 5 Angstroms thick and may also be Sn, Ge, Ga, Sb, or Cr. The AP1 layer or free layer can contain one or two additional FeCo layers to give a configuration represented by FeCo/[HA/IL]nHA, [HA/IL]nHA/FeCo, or FeCo/[HA/IL]nHA/FeCo where n is an integer≧1, HA is a Heusler alloy layer, and IL is an insertion layer. Optionally, a Heusler alloy insertion scheme is possible by doping Al or FeCo in the HA layer. For example, Co2MnSi may be co-sputtered with an Al or FeCo target or with a Co2MnAl or Co2FeSi target.

摘要翻译： 公开了一种自旋阀结构，其中AP1层和/或自由层由具有Al或FeCo插入层的层状Heusler合金制成。 因此，Heusler合金（例如Co 2 MnSi）的排序温度从约350℃降低到280℃，这对于自旋电子器件应用是实用的。 插入层的厚度为0.5〜5埃，也可以是Sn，Ge，Ga，Sb或Cr。 AP1层或自由层可以含有一个或两个附加的FeCo层，以得到由FeCo / [HA / IL] N HA表示的构型，[HA / IL] N < HA / FeCo或FeCo / [HA / IL] N / HACo，其中n为整数> = 1，HA为Heusler合金层，IL为插入层。 任选地，通过在HA层中掺杂Al或FeCo，Heusler合金插入方案是可能的。 例如，Co 2 MnSi可以与Al或FeCo靶或与Co 2 N 2 MnAl或Co 2 FeSi靶共溅射。

公开(公告)号：US20070047159A1

公开(公告)日：2007-03-01

申请号：US11209231

申请日：2005-08-23

申请人： Tong Zhao ,  Kunliang Zhang ,  Hui-Chuan Wang ,  Yu-Hsia Chen ,  Min Li

发明人： Tong Zhao ,  Kunliang Zhang ,  Hui-Chuan Wang ,  Yu-Hsia Chen ,  Min Li

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G01R33/093 ,  B82Y25/00 ,  Y10T29/49028 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49046 ,  Y10T428/1121

摘要： A TMR sensor, a CPP GMR sensor and a CCP CPP GMR sensor all include a tri-layered free layer that is of the form CoFe/CoFeB/NiFe, where the atom percentage of Fe can vary between 5% and 90% and the atom percentage of B can vary between 5% and 30%. The sensors also include SyAP pinned layers which, in the case of the GMR sensors include at least one layer of CoFe laminated onto a thin layer of Cu. In the CCP CPP sensor, a layer of oxidized aluminum containing segregated particles of copper is formed between the spacer layer and the free layer. All three configurations exhibit extremely good values of coercivity, areal resistance, GMR ratio and magnetostriction.

摘要翻译： TMR传感器，CPP GMR传感器和CCP CPP GMR传感器都包括三层自由层，其形式为CoFe / CoFeB / NiFe，其中Fe的原子百分比可以在5％和90％之间变化，原子 B的百分比可以在5％和30％之间变化。 这些传感器还包括SyAP钉扎层，其在GMR传感器的情况下包括层压在Cu薄层上的至少一层CoFe。 在CCPCPP传感器中，在间隔层和自由层之间形成一层含氧化铝的偏析铜颗粒。 所有这三种结构表现出非常好的矫顽力，面电阻，GMR比和磁致伸缩的值。

公开(公告)号：US09040178B2

公开(公告)日：2015-05-26

申请号：US12284409

申请日：2008-09-22

申请人： Tong Zhao ,  Hui-Chuan Wang ,  Yu-Chen Zhou ,  Min Li ,  Kunliang Zhang

发明人： Tong Zhao ,  Hui-Chuan Wang ,  Yu-Chen Zhou ,  Min Li ,  Kunliang Zhang

IPC分类号： G11B5/39 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/09

CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3909 ,  G11B5/3929 ,  G11B2005/3996 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1143

摘要： A TMR sensor that includes a free layer having at least one B-containing (BC) layer made of CoFeB, CoFeBM, CoB, COBM, or CoBLM, and a plurality of non-B containing (NBC) layers made of CoFe, CoFeM, or CoFeLM is disclosed where L and M are one of Ni, Ta, Ti, W, Zr, Hf, Tb, or Nb. One embodiment is represented by (NBC/BC)n where n≧2. A second embodiment is represented by (NBC/BC)n/NBC where n≧1. In every embodiment, a NBC layer contacts the tunnel barrier and NBC layers each with a thickness from 2 to 8 Angstroms are formed in alternating fashion with one or more BC layers each 10 to 80 Angstroms thick. Total free layer thickness is

摘要翻译： 一种TMR传感器，其包括具有由CoFeB，CoFeBM，CoB，COBM或CoBLM制成的至少一个含B（BC）层的自由层和由CoFe，CoFeM制成的多个不含B的（NBC） 或CoFeLM，其中L和M是Ni，Ta，Ti，W，Zr，Hf，Tb或Nb之一。 一个实施方案由（NBC / BC）n表示，其中n≥2。 第二实施例由（NBC / BC）n / NBC表示，其中n≥1。 在每个实施例中，NBC层接触隧道势垒，并且各自具有2至8埃厚度的NBC层以与10至80埃厚的BC层交替地形成。 总自由层厚度<100埃。 这里描述的自由层配置能够在实现高TMR比，低磁致伸缩，低RA和低Hc值的同时实现显着的降噪（SNR增强）。

公开(公告)号：US08747629B2

公开(公告)日：2014-06-10

申请号：US12284454

申请日：2008-09-22

申请人： Hui-Chuan Wang ,  Tong Zhao ,  Min Li ,  Kunliang Zhang

发明人： Hui-Chuan Wang ,  Tong Zhao ,  Min Li ,  Kunliang Zhang

IPC分类号： C23C14/00 ,  C23C14/32 ,  G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/33 ,  G11B5/3929 ,  G11B2005/3996 ,  Y10T428/1114

摘要： A TMR sensor with a free layer having a FL1/FL2/FL3 configuration is disclosed in which FL1 is FeCo or a FeCo alloy with a thickness between 2 and 15 Angstroms. The FL2 layer is made of CoFeB or a CoFeB alloy having a thickness from 2 to 10 Angstroms. The FL3 layer is from 10 to 100 Angstroms thick and has a negative λ to offset the positive λ from FL1 and FL2 layers and is comprised of CoB or a CoBQ alloy where Q is one of Ni, Mn, Tb, W, Hf, Zr, Nb, and Si. Alternatively, the FL3 layer may be a composite such as CoB/CoFe, (CoB/CoFe)n where n is ≧2 or (CoB/CoFe)m/CoB where m is ≧1. The free layer described herein affords a high TMR ratio above 60% while achieving low values for λ (

摘要翻译： 公开了具有FL1 / FL2 / FL3结构的自由层的TMR传感器，其中FL1是FeCo或厚度在2和15埃之间的FeCo合金。 FL2层由厚度为2〜10埃的CoFeB或CoFeB合金制成。 FL3层的厚度为10〜100埃，并且具有负λ以从FL1和FL2层偏移正的λ，由CoB或CoBQ合金组成，其中Q是Ni，Mn，Tb，W，Hf，Zr ，Nb和Si。 或者，FL3层可以是其中n为≥2的CoB / CoFe（CoB / CoFe）n或（CoB / CoFe）m / CoB（其中m为≥1）的复合物。 此处描述的自由层提供高于60％的高TMR比，同时实现λ（<5×10-6），RA（1.5欧姆/μm2）和Hc（<6Oe）的低值。

公开(公告)号：US08653615B2

公开(公告)日：2014-02-18

申请号：US12313351

申请日：2008-11-19

申请人： Tong Zhao ,  Hui-Chuan Wang ,  Yu-Chen Zhou ,  Min Li ,  Kunliang Zhang

发明人： Tong Zhao ,  Hui-Chuan Wang ,  Yu-Chen Zhou ,  Min Li ,  Kunliang Zhang

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11B5/3906 ,  G11C11/16 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/302 ,  H01L43/12

摘要： A magneto-resistive device having a large output signal as well as a high signal-to-noise ratio is described along with a process for forming it. This improved performance was accomplished by expanding the free layer into a multilayer laminate comprising at least three ferromagnetic layers separated from one another by antiparallel coupling layers. The ferromagnetic layer closest to the transition layer must include CoFeB while the furthermost layer is required to have low Hc as well as a low and negative lambda value. One possibility for the central ferromagnetic layer is NiFe but this is not mandatory.

摘要翻译： 描述具有大输出信号以及高信噪比的磁阻装置及其形成方法。 通过将自由层扩展成包括通过反平行耦合层彼此分离的至少三个铁磁层的多层层压体来实现这一改进的性能。 最接近过渡层的铁磁层必须包括CoFeB，而最外层需要具有低Hc以及低和负的λ值。 中心铁磁层的一种可能性是NiFe，但这不是强制性的。

公开(公告)号：US08456781B2

公开(公告)日：2013-06-04

申请号：US13561206

申请日：2012-07-30

申请人： Tong Zhao ,  Hui-Chuan Wang ,  Min Li ,  Kunliang Zhang

发明人： Tong Zhao ,  Hui-Chuan Wang ,  Min Li ,  Kunliang Zhang

IPC分类号： G11B5/39 ,  C21D1/04

CPC分类号： G11B5/3906 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/303 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T29/49034 ,  Y10T29/49052

摘要： A composite free layer having a FL1/insertion/FL2 configuration where a top surface of FL1 is treated with a weak plasma etch is disclosed for achieving enhanced dR/R while maintaining low RA, and low λ in TMR or GMR sensors. The weak plasma etch removes less than about 0.2 Angstroms of FL1 and is believed to modify surface structure and possibly increase surface energy. FL1 may be CoFe, CoFe/CoFeB, or alloys thereof having a (+) λ value. FL2 may be CoFe, NiFe, or alloys thereof having a (−) λ value. The thin insertion layer includes at least one magnetic element such as Co, Fe, and Ni, and at least one non-magnetic element. When CoFeBTa is selected as insertion layer, the CoFeB:Ta ratio is from 1:1 to 4:1.

摘要翻译： 公开了具有FL1 /插入/ FL2配置的复合自由层，其中FL1的顶表面用弱等离子体蚀刻处理，以实现增强的dR / R，同时保持低RA和TMR或GMR传感器中的低λ。 弱等离子体蚀刻去除了小于约0.2埃的FL1，据信可以改变表面结构并可能增加表面能。 FL1可以是具有（+）λ值的CoFe，CoFe / CoFeB或其合金。 FL2可以是具有（ - ）λ值的CoFe，NiFe或其合金。 薄插入层包括至少一种诸如Co，Fe和Ni的磁性元件和至少一种非磁性元件。 当选择CoFeBTa作为插入层时，CoFeB：Ta的比例为1:1至4:1。

公开(公告)号：US08325448B2

公开(公告)日：2012-12-04

申请号：US12931849

申请日：2011-02-11

申请人： Kunliang Zhang ,  Shengyuan Wang ,  Tong Zhao ,  Min Li ,  Hui-Chuan Wang

发明人： Kunliang Zhang ,  Shengyuan Wang ,  Tong Zhao ,  Min Li ,  Hui-Chuan Wang

IPC分类号： G11B5/127

CPC分类号： H01L43/12 ,  B82Y40/00 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/307 ,  H01L29/82 ,  H01L43/08

摘要： The pinning field in an MR device was significantly improved by using the Ru 4A peak together with steps to minimize interfacial roughness of the ruthenium layer as well as boron and manganese diffusion into the ruthenium layer during manufacturing. This made it possible to anneal at temperatures as high as 340° C. whereby a high MR ratio could be simultaneously achieved.