公开(公告)号：US5630904A

公开(公告)日：1997-05-20

申请号：US410726

申请日：1995-03-27

申请人： Tetsuo Aoyama ,  Rieko Nakano ,  Akira Ishihama ,  Koichiro Adachi

发明人： Tetsuo Aoyama ,  Rieko Nakano ,  Akira Ishihama ,  Koichiro Adachi

IPC分类号： G03F7/42 ,  H01L21/02 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  C09K13/00

CPC分类号： H01L21/02071 ,  G03F7/422 ,  G03F7/425 ,  H01L21/02063 ,  H01L21/32138 ,  Y10S438/963

摘要： Stripping and cleaning agent for removing dry-etching photoresist residues, and a method for forming an aluminum based line pattern using the stripping and cleaning agent. The stripping and cleaning agent contains (a) from 5 to 50% by weight of an organocarboxlic ammonium salt or an amine carboxylate, represented by the formula [R.sup.1 ]m[COONH.sub.p (R.sup.2)q]n, where R.sup.1 is hydrogen, or an alkyl or aryl group having from 1 to 18 carbon atoms; R.sup.2 is hydrogen, or an alkyl group having from 1 to 4 carbon atoms; m and n independently are integers of from 1 to 4, p is integer of from 1 to 4, q is integer of from 1 to 3, and p+q=4 and (b) from 0.5 to 15% by weight of a fluorine compound. The inventive method is advantageously applied to treating a dry-etched semiconductor substrate with the stripping and cleaning agent. The semiconductor substrate comprises a semiconductor wafer having thereon a conductive layer containing aluminum. The conductive layer is dry-etched through a patterned photoresist mask to form a wiring body having etched side walls. The dry etching forms a side wall protection film on the side walls. In accordance with the inventive method, the side wall protection film and other resist residues are completely released without corroding the wiring body.

摘要翻译： 用于去除干蚀刻光刻胶残渣的剥离和清洁剂，以及使用剥离和清洁剂形成铝基线图案的方法。 剥离剂和清洁剂含有（a）5-50重量％的由式[R1] m [COONHp（R2）q] n表示的有机碳铵铵盐或胺羧酸盐，其中R 1是氢，或 具有1至18个碳原子的烷基或芳基; R2是氢或具有1至4个碳原子的烷基; m和n独立地为1至4的整数，p为1至4的整数，q为1至3的整数，p + q = 4和（b）0.5至15重量％的氟 复合。 本发明的方法有利地应用于用剥离和清洁剂处理干蚀刻的半导体衬底。 半导体衬底包括其上具有含有铝的导电层的半导体晶片。 通过图案化的光致抗蚀剂掩模对导电层进行干蚀刻，以形成具有蚀刻侧壁的布线体。 干蚀刻在侧壁上形成侧壁保护膜。 根据本发明的方法，侧壁保护膜和其它抗蚀剂残留物完全释放而不会腐蚀布线体。

公开(公告)号：US5106462A

公开(公告)日：1992-04-21

申请号：US432811

申请日：1989-11-07

申请人： Takamasa Kawakami ,  Rieko Nakano ,  Kazuhiro Ando ,  Ryuji Fujiura

发明人： Takamasa Kawakami ,  Rieko Nakano ,  Kazuhiro Ando ,  Ryuji Fujiura

IPC分类号： C23C18/08 ,  C25D5/56 ,  H05K3/10

CPC分类号： C23C18/08 ,  C25D5/56 ,  H05K3/105 ,  Y10S205/927

摘要： Process for producing a copper plated resin article by forming a uniform copper coating having excellent adhesive strength on a fiber-reinforced or unreinforced thermoplastic or thermosetting resin article having a heat deformation temperature higher than 165.degree. C. The resin article is heated along with a source of copper formate under a reduced pressure or in a non-oxidative atmosphere to a temperature in the range above 165.degree. C. but lower than the heat deformation temperature of the resin article. The process makes it possible to produce a resin article having formed thereon a copper layer having an excellent adhesive strength by a very simple manner, and the resin article thus obtained can be used in various industrial fields.

公开(公告)号：US5093510A

公开(公告)日：1992-03-03

申请号：US622681

申请日：1990-12-05

申请人： Takamasa Kawakami ,  Ryuji Fujiura ,  Kazuhiro Ando ,  Rieko Nakano

发明人： Takamasa Kawakami ,  Ryuji Fujiura ,  Kazuhiro Ando ,  Rieko Nakano

IPC分类号： C07C51/09 ,  C07C51/41 ,  C07C53/06

CPC分类号： C07C51/412

摘要： A process for producing copper formate, which comprises subjecting methyl formate to a liquid-phase hydrolysis reaction at a temperature from 60 to 85.degree. C. in the presence of copper carbonate.

公开(公告)号：US4594330A

公开(公告)日：1986-06-10

申请号：US712036

申请日：1985-03-15

申请人： Takashi Suzuki ,  Takamasa Kawakami ,  Takeshi Koyama ,  Masami Orisaku ,  Kansei Izaki ,  Rieko Nakano ,  Akira Mori

发明人： Takashi Suzuki ,  Takamasa Kawakami ,  Takeshi Koyama ,  Masami Orisaku ,  Kansei Izaki ,  Rieko Nakano ,  Akira Mori

IPC分类号： C01B21/068 ,  C01B21/087 ,  C01B31/36 ,  C04B35/565 ,  C04B35/589 ,  C04B35/52

CPC分类号： C01B31/36 ,  C01B21/068 ,  C01B21/087 ,  C04B35/565 ,  C04B35/589 ,  C01P2002/02 ,  C01P2002/72 ,  C01P2002/82 ,  C01P2004/03 ,  C01P2004/61 ,  C01P2006/80

摘要： Fine spherical amorphous powder represented by the general formula:SiCxNyHzwherein 0.1

摘要翻译： 通过气相氧化基本上不含卤素原子和氧原子的有机硅化合物制备由通式：SiC x N y H y表示的细球状无定形粉末，其中0.1

公开(公告)号：US4465872A

公开(公告)日：1984-08-14

申请号：US391445

申请日：1982-06-23

申请人： Takashi Suzuki ,  Shoichiro Hashimoto ,  Masami Orisaku ,  Rieko Nakano

发明人： Takashi Suzuki ,  Shoichiro Hashimoto ,  Masami Orisaku ,  Rieko Nakano

IPC分类号： C07C27/00 ,  C07C37/56 ,  C07C39/07 ,  C07C67/00

CPC分类号： C07C37/56

摘要： p-Cresol is produced in one step by direct oxidation of p-tolualdehyde with a peroxide in formic acid as a solvent while keeping 3 to 15% by weight of water in formic acid on the basis of formic acid and a reaction temperature in a range of 50.degree. to 150.degree. C.

摘要翻译： 通过在甲酸作为溶剂中用过氧化物直接氧化对甲苯甲醛，同时在甲酸的基础上在甲酸中保持3至15重量％的水，并在一定范围内的反应温度，一步法生产对甲酚。 50〜150℃

公开(公告)号：US4444738A

公开(公告)日：1984-04-24

申请号：US323989

申请日：1981-11-23

申请人： Takashi Suzuki ,  Shoichiro Hashimoto ,  Rieko Nakano

发明人： Takashi Suzuki ,  Shoichiro Hashimoto ,  Rieko Nakano

IPC分类号： C01B39/02 ,  C01B39/04 ,  C07C1/00 ,  C07C1/20 ,  C07C11/02 ,  C07C67/00 ,  C01B33/28

CPC分类号： C01B33/2876 ,  C07C1/20 ,  C07C2529/06 ,  Y10S423/22

摘要： A process for producing a crystalline aluminosilicate which comprises hydrothermally reacting a starting mixture composed of a silicon compound, an aluminum compound, an alkali metal compound, a compound capable of releasing an organic cation in water, and water, characterized in that said starting mixture comprises at least two colloids having different silicon/aluminum atomic ratios, and that the hydrothermal reaction is carried out, as required, in the presence of a fluorine compound.

摘要翻译： 一种结晶性硅铝酸盐的制造方法，其特征在于，将由硅化合物，铝化合物，碱金属化合物，能够释放水中的有机阳离子的化合物组成的起始混合物与水热水反应，其特征在于，所述起始混合物包含 至少两种具有不同硅/铝原子比的胶体，并且根据需要在氟化合物的存在下进行水热反应。