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41 条记录 (耗时 0.03 秒)

    Substrate holding mechanism, substrate polishing apparatus and substrate polishing method
    11.
    发明授权
    Substrate holding mechanism, substrate polishing apparatus and substrate polishing method 有权
    基板保持机构，基板研磨装置和基板研磨方法

    公开(公告)号：US08292694B2

    公开(公告)日：2012-10-23

    申请号：US12618033

    申请日：2009-11-13

    申请人： Tetsuji Togawa ,  Toshio Watanabe ,  Hiroyuki Yano ,  Gen Toyota ,  Kenji Iwade ,  Yoshikuni Tateyama

    发明人： Tetsuji Togawa ,  Toshio Watanabe ,  Hiroyuki Yano ,  Gen Toyota ,  Kenji Iwade ,  Yoshikuni Tateyama

    IPC分类号： B24B49/00

    CPC分类号： B24B37/015 ,  B24B41/061 ,  B24B55/02

    摘要： A substrate holding mechanism, a substrate polishing apparatus and a substrate polishing method have functions capable of minimizing an amount of heat generated during polishing of a substrate to be polished and of effectively cooling a substrate holding part of the substrate holding mechanism, and also capable of effectively preventing a polishing solution and polishing dust from adhering to an outer peripheral portion of the substrate holding part and drying thereon. The substrate holding mechanism has a mounting flange, a support member 6 and a retainer ring. A substrate to be polished is held on a lower side of the support member surrounded by the retainer ring, and the substrate is pressed against a polishing surface of a polishing table. The mounting flange is provided with a flow passage contiguous with at least the retainer ring. A temperature-controlled gas is supplied through the flow passage to cool the mounting flange, the support member and the retainer ring. The retainer ring is provided with a plurality of through-holes communicating with the flow passage to spray the gas flowing through the flow passage onto the polishing surface of the polishing table.

    摘要翻译： 基板保持机构，基板研磨装置和基板研磨方法具有能够使待研磨基板的抛光时产生的热量最小化的功能，并有效地冷却基板保持机构的基板保持部，并且还能够 有效地防止研磨液和抛光尘埃附着在基板保持部的外周部并干燥。 基板保持机构具有安装凸缘，支撑构件6和保持环。 待研磨的基板被保持在由保持环包围的支撑构件的下侧，并且基板被压靠在抛光台的抛光表面上。 安装凸缘设置有至少与保持环相邻的流动通道。 通过流路供给温度控制气体以冷却安装凸缘，支撑构件和保持环。 保持环设置有与流路连通的多个通孔，以将流过流道的气体喷射到抛光台的抛光表面上。

    SUBSTRATE HOLDING MECHANISM, SUBSTRATE POLISHING APPARATUS AND SUBSTRATE POLISHING METHOD
    14.
    发明申请
    SUBSTRATE HOLDING MECHANISM, SUBSTRATE POLISHING APPARATUS AND SUBSTRATE POLISHING METHOD 有权
    基板保持机构，基板抛光装置和基板抛光方法

    公开(公告)号：US20100062691A1

    公开(公告)日：2010-03-11

    申请号：US12618033

    申请日：2009-11-13

    申请人： Tetsuji TOGAWA ,  Toshio Watanabe ,  Hiroyuki Yano ,  Gen Toyota ,  Kenji Iwade ,  Yoshikuni Tateyama

    发明人： Tetsuji TOGAWA ,  Toshio Watanabe ,  Hiroyuki Yano ,  Gen Toyota ,  Kenji Iwade ,  Yoshikuni Tateyama

    IPC分类号： B24B55/00 ,  B24B1/00 ,  B24B55/12

    CPC分类号： B24B37/015 ,  B24B41/061 ,  B24B55/02

    摘要： A substrate holding mechanism, a substrate polishing apparatus and a substrate polishing method have functions capable of minimizing an amount of heat generated during polishing of a substrate to be polished and of effectively cooling a substrate holding part of the substrate holding mechanism, and also capable of effectively preventing a polishing solution and polishing dust from adhering to an outer peripheral portion of the substrate holding part and drying thereon. The substrate holding mechanism has a mounting flange, a support member 6 and a retainer ring. A substrate to be polished is held on a lower side of the support member surrounded by the retainer ring, and the substrate is pressed against a polishing surface of a polishing table. The mounting flange is provided with a flow passage contiguous with at least the retainer ring. A temperature-controlled gas is supplied through the flow passage to cool the mounting flange, the support member and the retainer ring. The retainer ring is provided with a plurality of through-holes communicating with the flow passage to spray the gas flowing through the flow passage onto the polishing surface of the polishing table.

    摘要翻译： 基板保持机构，基板研磨装置和基板研磨方法具有能够使待研磨基板的抛光时产生的热量最小化的功能，并有效地冷却基板保持机构的基板保持部，并且还能够 有效地防止研磨液和抛光尘埃附着在基板保持部的外周部并干燥。 基板保持机构具有安装凸缘，支撑构件6和保持环。 待研磨的基板被保持在由保持环包围的支撑构件的下侧，并且基板被压靠在抛光台的抛光表面上。 安装凸缘设置有至少与保持环相邻的流动通道。 通过流路供给温度控制气体以冷却安装凸缘，支撑构件和保持环。 保持环设置有与流路连通的多个通孔，以将流过流道的气体喷射到抛光台的抛光表面上。

    Manufacturing method of a semiconductor device
    18.
    发明授权
    Manufacturing method of a semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号：US08174125B2

    公开(公告)日：2012-05-08

    申请号：US12412811

    申请日：2009-03-27

    申请人： Nobuyuki Kurashima ,  Gaku Minamihaba ,  Dai Fukushima ,  Yoshikuni Tateyama ,  Hiroyuki Yano

    发明人： Nobuyuki Kurashima ,  Gaku Minamihaba ,  Dai Fukushima ,  Yoshikuni Tateyama ,  Hiroyuki Yano

    IPC分类号： H01L23/48

    CPC分类号： H01L23/53295 ,  H01L21/76807 ,  H01L21/76832 ,  H01L21/7684 ,  H01L23/522 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A manufacturing method of a semiconductor device comprises: providing a first insulating film whose relative dielectric constant is at most a predetermined value above a substrate; providing a second insulating film whose relative dielectric constant is greater than the predetermined value on a surface of the first insulating film; forming a recess for a wire through the second insulating film and extending into the first insulating film, and also forming a recess for a dummy wire through the second insulating film and extending into the first insulating film spaced from a formed area of the recess for the wire; providing a conductive material inside the recess for the wire and the recess for the dummy wire; and providing a wire inside the recess for the wire and providing a dummy wire inside the recess for the dummy wire by polishing and removing the conductive material.

    摘要翻译： 半导体器件的制造方法包括：提供相对介电常数在基板上方至多预定值的第一绝缘膜; 提供在所述第一绝缘膜的表面上相对介电常数大于所述预定值的第二绝缘膜; 通过所述第二绝缘膜形成用于电线的凹槽并延伸到所述第一绝缘膜中，并且还通过所述第二绝缘膜形成用于虚拟线的凹槽并且延伸到与所述凹部的形成区域间隔开的所述第一绝缘膜中， 线; 在用于线的凹槽内部和用于虚拟线的凹槽内提供导电材料; 并且在所述凹槽内提供用于所述导线的线，并且通过抛光和去除所述导电材料在所述虚拟线的所述凹部内部提供虚拟线。

    POST-CMP TREATING LIQUID AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME
    19.
    发明申请
    POST-CMP TREATING LIQUID AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME 审中-公开
    使用其的半导体器件的后CMP处理液体和制造方法

    公开(公告)号：US20110195888A1

    公开(公告)日：2011-08-11

    申请号：US13091732

    申请日：2011-04-21

    申请人： Nobuyuki KURASHIMA ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano

    发明人： Nobuyuki KURASHIMA ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano

    IPC分类号： C11D3/60

    CPC分类号： H01L21/02074

    摘要： Post-CMP treating liquids are provided, one of which includes water, an amphoteric surfactant, an anionic surfactant, a complexing agent, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Another includes water, polyphenol, an anionic surfactant, ethylene diamine tetraacetic acid, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Both of the treating liquids have a pH ranging from 4 to 9, and exhibit a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.

    摘要翻译： 提供后CMP处理液，其中之一包括水，两性表面活性剂，阴离子表面活性剂，络合剂，其表面具有羧基和磺酰基的树脂颗粒，其一次粒径为10至60nm， 和四甲基氢氧化铵。 另外还包括水，多酚，阴离子表面活性剂，乙二胺四乙酸，其表面具有羧基和磺酰基的树脂颗粒，其一次粒径为10至60nm，四甲基氢氧化铵。 两种处理液的pH范围为4至9，并且以10nm / min或更低的速率显示绝缘膜和导电膜的抛光速率。