利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

26 条记录 (耗时 0.035 秒)

    Aluminum nitride single crystal forming polygonal columns and a process for producing a plate-shaped aluminum nitride single crystal using the same
    14.
    发明授权
    Aluminum nitride single crystal forming polygonal columns and a process for producing a plate-shaped aluminum nitride single crystal using the same 有权
    氮化铝单晶形成多边形柱和使用其制造板状氮化铝单晶的方法

    公开(公告)号：US08921980B2

    公开(公告)日：2014-12-30

    申请号：US12743703

    申请日：2008-11-18

    申请人： Hiroshi Amano ,  Yukihiro Kanechika ,  Masanobu Azuma

    发明人： Hiroshi Amano ,  Yukihiro Kanechika ,  Masanobu Azuma

    IPC分类号： C30B29/40 ,  C30B23/00

    CPC分类号： C30B29/403 ,  C30B23/00 ,  Y10T428/2973

    摘要： An aluminum nitride single crystal in the form of polygonal columns, the polygonal columns having the following properties [a] to [c]: [a] the content of a metal impurity is below a detection limit, [b] the average bottom area is from 5×103 to 2×105 μm2, and [c] the average height is 50 μm to 5 mm. The above aluminum nitride single crystal is preferably obtainable in a method including the steps of sublimating an aluminum nitride starting material (A) containing 0.1 to 30% by mass of a rare earth oxide by heating the starting material at a temperature of not lower than 2000° C., depositing aluminum nitride on a hexagonal single crystal substrate and thereby growing aluminum nitride single crystal in the shape of polygonal columns.

    摘要翻译： 多边形柱状的氮化铝单晶，具有以下性质[a]〜[c]的多边形柱：[a]金属杂质的含量低于检测限，[b]平均底面积为 5×103〜2×105μm2，[c]平均高度为50μm〜5mm。 上述氮化铝单晶优选可通过以下方法获得：包括以下步骤的方法：在不低于2000℃的温度下加热起始材料，使含有0.1-30质量％的稀土氧化物的氮化铝原料（A）升华 在六边形单晶衬底上沉积氮化铝，从而生长为多边形柱状的氮化铝单晶。

    Aluminum Nitride Single Crystal Forming Polygonal Columns and a Process for Producing a Plate-Shaped Aluminum Nitride Single Crystal Using the Same
    15.
    发明申请
    Aluminum Nitride Single Crystal Forming Polygonal Columns and a Process for Producing a Plate-Shaped Aluminum Nitride Single Crystal Using the Same 有权
    氮化铝单晶形成多边形柱和使用其制造板状氮化铝单晶的方法

    公开(公告)号：US20100255304A1

    公开(公告)日：2010-10-07

    申请号：US12743703

    申请日：2008-11-18

    申请人： Hiroshi Amano ,  Yukihiro Kanechika ,  Masanobu Azuma

    发明人： Hiroshi Amano ,  Yukihiro Kanechika ,  Masanobu Azuma

    IPC分类号： C01B21/072 ,  C30B23/02

    CPC分类号： C30B29/403 ,  C30B23/00 ,  Y10T428/2973

    摘要： The present invention provides an aluminum nitride single crystal forming polygonal columns, the polygonal columns having the following properties [a] to [c]:[a] the content of a metal impurity is below the detection limit, [b] the average bottom area is from 5×103 to 2×105 μm2, and [c] the average height is 50 μm to 5 mm. The above aluminum nitride single crystal forming polygonal columns is preferably obtainable by sublimating an aluminum nitride starting material (A) containing 0.1 to 30% by mass of a rare earth oxide by heating the starting material at a temperature of not lower than 2000° C., depositing aluminum nitride on a hexagonal single crystal substrate and thereby growing aluminum nitride single crystal in the shape of polygonal columns.

    摘要翻译： 本发明提供一种形成氮化铝单晶的多边形柱，多边形柱具有以下特性[a]至[c]：[a]金属杂质的含量低于检测限，[b]平均底面积 为5×103〜2×105μm2，[c]平均高度为50μm〜5mm。 上述氮化铝单晶形成多边形柱优选通过在不低于2000℃的温度下加热原料来升华含有0.1〜30质量％的稀土类氧化物的氮化铝原料（A）而获得。 在六边形单晶衬底上沉积氮化铝，从而生长出多边形柱状的氮化铝单晶。

    Methods of Joining Ceramics and Ceramic Joined Articles
    17.
    发明申请
    Methods of Joining Ceramics and Ceramic Joined Articles 审中-公开
    加入陶瓷和陶瓷连接件的方法

    公开(公告)号：US20090173437A1

    公开(公告)日：2009-07-09

    申请号：US12225660

    申请日：2007-03-27

    申请人： Yukihiro Kanechika ,  Masanobu Azuma ,  Masaki Yasuoka ,  Koji Watari

    发明人： Yukihiro Kanechika ,  Masanobu Azuma ,  Masaki Yasuoka ,  Koji Watari

    IPC分类号： B32B37/06

    CPC分类号： C04B37/001 ,  C04B37/003 ,  C04B2237/08 ,  C04B2237/343 ,  C04B2237/348 ,  C04B2237/365 ,  C04B2237/366 ,  C04B2237/368

    摘要： [Problem] It is an object to provide a joining method, whereby even ceramics having an extremely small dielectric loss factor such as aluminum nitride can be joined efficiently and tightly.[Means for Resolution] A method of joining ceramics of the present invention is a method of heating ceramics of the same kind or different kinds by inducing self-heating of the ceramics by electromagnetic wave irradiation and thereby joining the ceramics together, and includes preheating a surface to be joined of the ceramic by a heating means that includes an auxiliary heating means other than the self-heating.

    摘要翻译： 本发明的目的是提供一种接合方法，其中即使具有非常小的介电损耗因数的陶瓷如氮化铝也能够被有效且紧密地接合。 [解决方法]本发明的陶瓷的接合方法是通过利用电磁波照射对陶瓷进行自发热从而将陶瓷接合在一起的方式来加热相同种类或不同种类的陶瓷的方法，包括预热 通过加热装置接合陶瓷的表面，该加热装置包括除了自加热之外的辅助加热装置。