公开(公告)号：US07176523B2

公开(公告)日：2007-02-13

申请号：US10921327

申请日：2004-08-19

申请人： Yutaka Hoshino ,  Shuji Ikeda ,  Isao Yoshida ,  Shiro Kamohara ,  Megumi Kawakami ,  Tomoyuki Miyake ,  Masatoshi Morikawa

发明人： Yutaka Hoshino ,  Shuji Ikeda ,  Isao Yoshida ,  Shiro Kamohara ,  Megumi Kawakami ,  Tomoyuki Miyake ,  Masatoshi Morikawa

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/66659 ,  H01L21/823475 ,  H01L21/823871 ,  H01L23/4827 ,  H01L23/53219 ,  H01L23/53295 ,  H01L27/0255 ,  H01L27/088 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/086 ,  H01L29/1045 ,  H01L29/105 ,  H01L29/1083 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/4916 ,  H01L29/7835 ,  H01L29/861 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs 13 (P1) for leading out electrodes on a source region 10, a drain region 9 and leach-through layers 3 (4), to which a first layer wirings 11a, 11d (M1) are connected and, further, backing second layer wirings 12a to 12d are connected on the conductor plugs 13 (P1) to the first layer wirings 11s, 11d (M1).

摘要翻译： 在具有漏极偏移区域的高频放大MOSFET中，通过提供用于在源极区域10，漏极区域9和漏电极上引出电极的导体插头13（P 1），尺寸减小并导通电阻降低 连接有第一层布线11a，11d（M1）的层3（4），并且另外，背面的第二层布线12a至12d在导体塞13（P1）上连接到第一层 层布线11s，11d（M 1）。

公开(公告)号：US06528848B1

公开(公告)日：2003-03-04

申请号：US09666772

申请日：2000-09-20

申请人： Yutaka Hoshino ,  Shuji Ikeda ,  Isao Yoshida ,  Shiro Kamohara ,  Megumi Kawakami ,  Tomoyuki Miyake ,  Masatoshi Morikawa

发明人： Yutaka Hoshino ,  Shuji Ikeda ,  Isao Yoshida ,  Shiro Kamohara ,  Megumi Kawakami ,  Tomoyuki Miyake ,  Masatoshi Morikawa

IPC分类号： H01L2972

CPC分类号： H01L29/66659 ,  H01L21/823475 ,  H01L21/823871 ,  H01L23/4827 ,  H01L23/53219 ,  H01L23/53295 ,  H01L27/0255 ,  H01L27/088 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/086 ,  H01L29/1045 ,  H01L29/105 ,  H01L29/1083 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/4916 ,  H01L29/7835 ,  H01L29/861 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs 13 (P1) for leading out electrodes on a source region 10, a drain region 9 and leach-through layers 3 (4), to which a first layer wirings 11a, 11d (M1) are connected and, further, backing second layer wirings 12a to 12d are connected on the conductor plugs 13 (P1) to the first layer wirings 11s, 11d (M1).

公开(公告)号：US20050051814A1

公开(公告)日：2005-03-10

申请号：US10902130

申请日：2004-07-30

申请人： Tomoyuki Miyake ,  Masatoshi Morikawa ,  Yutaka Hoshino ,  Makoto Hatori

发明人： Tomoyuki Miyake ,  Masatoshi Morikawa ,  Yutaka Hoshino ,  Makoto Hatori

IPC分类号： H01L21/336 ,  H01L21/8234 ,  H01L23/367 ,  H01L23/66 ,  H01L27/06 ,  H01L27/088 ,  H01L29/08 ,  H01L29/417 ,  H01L29/78 ,  H01L29/76 ,  H01L29/94

CPC分类号： H01L29/66659 ,  H01L21/823425 ,  H01L23/3677 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L27/0629 ,  H01L27/088 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/7835 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/01079 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

摘要： To reduce the size and improve the power added efficiency of an RF power module having an amplifier element composed of a silicon power MOSFET, the on resistance and feedback capacitance, which were conventionally in a trade-off relationship, are reduced simultaneously by forming the structure of an offset drain region existing between a gate electrode and an n+ type drain region of the power MOSFET into a double offset one. More specifically, this is accomplished by adjusting the impurity concentration of an n− type offset drain region, which is closest to the gate electrode, to be relatively low and adjusting the impurity concentration of an n type offset drain region, which is distant from the gate electrode, to be relatively high.

摘要翻译： 为了减小尺寸并提高具有由硅功率MOSFET组成的放大器元件的RF功率模块的功率附加效率，传统上处于折衷关系的导通电阻和反馈电容通过形成结构 存在于功率MOSFET的栅极电极和n +型漏极区域之间的偏移漏极区域，成为双偏移漏极区域。 更具体地说，这是通过调节最靠近栅电极的n +型偏移漏极区域的杂质浓度相对较低并且调节n型偏移漏极区域的杂质浓度来实现的 从栅电极到相对较高。

公开(公告)号：US20100258876A1

公开(公告)日：2010-10-14

申请号：US12823453

申请日：2010-06-25

申请人： Tomoyuki Miyake ,  Masatoshi Morikawa ,  Yutaka Hoshino ,  Makoto Hatori

发明人： Tomoyuki Miyake ,  Masatoshi Morikawa ,  Yutaka Hoshino ,  Makoto Hatori

IPC分类号： H01L27/088

CPC分类号： H01L29/66659 ,  H01L21/823425 ,  H01L23/3677 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L27/0629 ,  H01L27/088 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/7835 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/01079 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

摘要： To reduce the size and improve the power added efficiency of an RF power module having an amplifier element composed of a silicon power MOSFET, the on resistance and feedback capacitance, which were conventionally in a trade-off relationship, are reduced simultaneously by forming the structure of an offset drain region existing between a gate electrode and an n+ type drain region of the power MOSFET into a double offset one. More specifically, this is accomplished by adjusting the impurity concentration of an n− type offset drain region, which is closest to the gate electrode, to be relatively low and adjusting the impurity concentration of an n type offset drain region, which is distant from the gate electrode, to be relatively high.

摘要翻译： 为了减小尺寸并提高具有由硅功率MOSFET组成的放大器元件的RF功率模块的功率附加效率，传统上处于折衷关系的导通电阻和反馈电容通过形成结构 存在于功率MOSFET的栅极电极和n +型漏极区域之间的偏移漏极区域，成为双偏移漏极区域。 更具体地说，这是通过将最接近栅电极的n型偏移漏极区域的杂质浓度调整为相对较低而调整n型偏移漏极区域的杂质浓度来实现的，该杂质浓度远离 栅电极，要比较高。

公开(公告)号：US07791131B2

公开(公告)日：2010-09-07

申请号：US11645577

申请日：2006-12-27

申请人： Tomoyuki Miyake ,  Masatoshi Morikawa ,  Yutaka Hoshino ,  Makoto Hatori

发明人： Tomoyuki Miyake ,  Masatoshi Morikawa ,  Yutaka Hoshino ,  Makoto Hatori

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/62 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/66659 ,  H01L21/823425 ,  H01L23/3677 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L27/0629 ,  H01L27/088 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/7835 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/01079 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

摘要： To reduce the size and improve the power added efficiency of an RF power module having an amplifier element composed of a silicon power MOSFET, the on resistance and feedback capacitance, which were conventionally in a trade-off relationship, are reduced simultaneously by forming the structure of an offset drain region existing between a gate electrode and an n+ type drain region of the power MOSFET into a double offset one. More specifically, this is accomplished by adjusting the impurity concentration of an n− type offset drain region, which is closest to the gate electrode, to be relatively low and adjusting the impurity concentration of an n type offset drain region, which is distant from the gate electrode, to be relatively high.

摘要翻译： 为了减小尺寸并提高具有由硅功率MOSFET组成的放大器元件的RF功率模块的功率附加效率，传统上处于折衷关系的导通电阻和反馈电容通过形成结构 存在于功率MOSFET的栅极电极和n +型漏极区域之间的偏移漏极区域，成为双偏移漏极区域。 更具体地说，这是通过将最接近栅电极的n型偏移漏极区域的杂质浓度调整为相对较低而调整n型偏移漏极区域的杂质浓度来实现的，该杂质浓度远离 栅电极，要比较高。

公开(公告)号：US20070102757A1

公开(公告)日：2007-05-10

申请号：US11645577

申请日：2006-12-27

申请人： Tomoyuki Miyake ,  Masatoshi Morikawa ,  Yutaka Hoshino ,  Makoto Hatori

发明人： Tomoyuki Miyake ,  Masatoshi Morikawa ,  Yutaka Hoshino ,  Makoto Hatori

IPC分类号： H01L29/76

CPC分类号： H01L29/66659 ,  H01L21/823425 ,  H01L23/3677 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L27/0629 ,  H01L27/088 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/7835 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/01079 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

摘要： To reduce the size and improve the power added efficiency of an RF power module having an amplifier element composed of a silicon power MOSFET, the on resistance and feedback capacitance, which were conventionally in a trade-off relationship, are reduced simultaneously by forming the structure of an offset drain region existing between a gate electrode and an n+ type drain region of the power MOSFET into a double offset one. More specifically, this is accomplished by adjusting the impurity concentration of an n− type offset drain region, which is closest to the gate electrode, to be relatively low and adjusting the impurity concentration of an n type offset drain region, which is distant from the gate electrode, to be relatively high.

摘要翻译： 为了减小尺寸并提高具有由硅功率MOSFET组成的放大器元件的RF功率模块的功率附加效率，传统上处于折衷关系的导通电阻和反馈电容通过形成结构 存在于功率MOSFET的栅极电极和n + SUP型漏极区域之间的偏移漏极区域，成为双偏移漏极区域。 更具体地说，这是通过将最接近栅电极的n型偏移漏极区域的杂质浓度调整为相对较低而调整n型偏移漏极区域的杂质浓度来实现的，该杂质浓度远离 栅电极，要比较高。

公开(公告)号：US07994567B2

公开(公告)日：2011-08-09

申请号：US12823453

申请日：2010-06-25

申请人： Tomoyuki Miyake ,  Masatoshi Morikawa ,  Yutaka Hoshino ,  Makoto Hatori

发明人： Tomoyuki Miyake ,  Masatoshi Morikawa ,  Yutaka Hoshino ,  Makoto Hatori

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/66659 ,  H01L21/823425 ,  H01L23/3677 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L27/0629 ,  H01L27/088 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/7835 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/01079 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

摘要： To reduce the size and improve the power added efficiency of an RF power module having an amplifier element composed of a silicon power MOSFET, the on resistance and feedback capacitance, which were conventionally in a trade-off relationship, are reduced simultaneously by forming the structure of an offset drain region existing between a gate electrode and an n+ type drain region of the power MOSFET into a double offset one. More specifically, this is accomplished by adjusting the impurity concentration of an n− type offset drain region, which is closest to the gate electrode, to be relatively low and adjusting the impurity concentration of an n type offset drain region, which is distant from the gate electrode, to be relatively high.

摘要翻译： 为了减小尺寸并提高具有由硅功率MOSFET组成的放大器元件的RF功率模块的功率附加效率，通常形成权衡关系的导通电阻和反馈电容通过形成结构 存在于功率MOSFET的栅极电极和n +型漏极区域之间的偏移漏极区域，成为双偏移漏极区域。 更具体地说，这是通过将最接近栅电极的n型偏移漏极区域的杂质浓度调整为相对较低而调整n型偏移漏极区域的杂质浓度来实现的，该杂质浓度远离 栅电极，要比较高。

公开(公告)号：US07176520B2

公开(公告)日：2007-02-13

申请号：US10902130

申请日：2004-07-30

申请人： Tomoyuki Miyake ,  Masatoshi Morikawa ,  Yutaka Hoshino ,  Makoto Hatori

发明人： Tomoyuki Miyake ,  Masatoshi Morikawa ,  Yutaka Hoshino ,  Makoto Hatori

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L27/01 ,  H01L27/12

CPC分类号： H01L29/66659 ,  H01L21/823425 ,  H01L23/3677 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L27/0629 ,  H01L27/088 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/7835 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/01079 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

摘要： To reduce the size and improve the power added efficiency of an RF power module having an amplifier element composed of a silicon power MOSFET, the on resistance and feedback capacitance, which were conventionally in a trade-off relationship, are reduced simultaneously by forming the structure of an offset drain region existing between a gate electrode and an n+ type drain region of the power MOSFET into a double offset one. More specifically, this is accomplished by adjusting the impurity concentration of an n− type offset drain region, which is closest to the gate electrode, to be relatively low and adjusting the impurity concentration of an n type offset drain region, which is distant from the gate electrode, to be relatively high.

摘要翻译： 为了减小尺寸并提高具有由硅功率MOSFET组成的放大器元件的RF功率模块的功率附加效率，传统上处于折衷关系的导通电阻和反馈电容通过形成结构 存在于功率MOSFET的栅极电极和n + SUP型漏极区域之间的偏移漏极区域，成为双偏移漏极区域。 更具体地说，这是通过调节最靠近栅电极的n + SUP型偏移漏极区域的杂质浓度相对较低并调整n型偏移漏极的杂质浓度来实现的 远离栅电极的区域相对较高。

公开(公告)号：US07310295B2

公开(公告)日：2007-12-18

申请号：US10533600

申请日：2003-11-05

申请人： Tomoyuki Miyake

发明人： Tomoyuki Miyake

IPC分类号： G11B7/00

CPC分类号： G11B7/0956 ,  G11B7/08582

摘要： A tilt sensor 23 is provided on a CD optical pickup 11, and a sub-chassis 24 and a height adjustment mechanism 25 and the like are provided for adjusting the tilt of a DVD optical pickup 12. A recording or reproduction position is read in by the DVD optical pickup 12 while moving the CD optical pickup 11 and the DVD optical pickup 12 along guide shafts 18 and 26 respectively, the amount of tilt of the optical disk 16 at this position is detected by the tilt sensor 23 of the CD optical pickup 11, the tilt of the laser light axis from the DVD optical pickup 12 is adjusted in accordance with the amount of tilt that is detected, and the amount of tilt of the optical disk 16 is corrected.

摘要翻译： 倾斜传感器23设置在CD光学拾取器11上，并且设置有副机架24和高度调节机构25等来调节DVD光学拾取器12的倾斜。 通过DVD光学拾取器12分别在沿着引导轴18和26移动CD光学拾取器11和DVD光学拾取器12的同时读取记录或再现位置，在该位置处的光盘16的倾斜量由 CD光学拾取器11的倾斜传感器23根据检测到的倾斜量调节激光光轴与DVD光学拾取器12的倾斜，并且校正光盘16的倾斜量。

公开(公告)号：US20060059500A1

公开(公告)日：2006-03-16

申请号：US10533600

申请日：2003-11-05

申请人： Tomoyuki Miyake

发明人： Tomoyuki Miyake

IPC分类号： G11B7/09 ,  G11B7/08 ,  G11B7/085

CPC分类号： G11B7/0956 ,  G11B7/08582

摘要： A tilt sensor 23 is provided on a CD optical pickup 11, and a sub-chassis 24 and a height adjustment mechanism 25 and the like are provided for adjusting the tilt of a DVD optical pickup 12. A recording or reproduction position is read in by the DVD optical pickup 12 while moving the CD optical pickup 11 and the DVD optical pickup 12 along guide shafts 18 and 26 respectively, the amount of tilt of the optical disk 16 at this position is detected by the tilt sensor 23 of the CD optical pickup 11, the tilt of the laser light axis from the DVD optical pickup 12 is adjusted in accordance with the amount of tilt that is detected, and the amount of tilt of the optical disk 16 is corrected.

摘要翻译： 倾斜传感器23设置在CD光学拾取器11上，并且设置有副机架24和高度调节机构25等来调节DVD光学拾取器12的倾斜。 通过DVD光学拾取器12分别在沿着引导轴18和26移动CD光学拾取器11和DVD光学拾取器12的同时读取记录或再现位置，在该位置处的光盘16的倾斜量由 CD光学拾取器11的倾斜传感器23根据检测到的倾斜量调节激光光轴与DVD光学拾取器12的倾斜，并且校正光盘16的倾斜量。