摘要:
An analog accumulator used in association with a solid state image analyzer for averaging and storing the fixed pattern noise (FPN) includes an N-stage transfer shift register with an input receiving a signal corresponding to the fixed pattern noise and with N outputs, N floating storage diodes each connected to an output of the transfer shift register, N reading parts each connected to a floating storage diode and each comprising a floating input diode connected to the floating storage diode through an injection gate, an injection device and a charge removal drain, and an N-stage transfer shift register with N inputs each connected to a reading part and with an output. The accumulator provides M integrations of N samples of an analog signal and delivers, at the end of the M integrations, the N accumulated samples several times.
摘要:
The invention relates to matrix image sensors intended in particular for digital photography. The invention provides a driver in each pixel that allows exposure control common to the entire matrix. The driver comprises five transistors, a photodiode and, apart from a supply conductor and a ground, four control conductors, these being an exposure control conductor common to all the pixels of the matrix; a row selection conductor common to all the pixels of any one row; a reset conductor common to all the pixels of any one row; and a column conductor for collecting the signal read on the pixels during row-by-row reading of the charges photogenerated in the pixels of the matrix.
摘要:
The invention relates to very small-sized color image sensors.The sensor according to the invention is made by the following method: the formation, on the front face of the semiconductive wafer (10), of a series of active zones (ZA) comprising image detection circuits and each corresponding to a respective image sensor, each active zone comprising photosensitive zones (12) covered with conductive and insulating layers (14, 16) enabling the collection of electrical charges generated in the photosensitive zones, the transfer of the wafer (10) by its front face against the front face of a supporting substrate (20), the elimination of the major part of the thickness of the semiconductive wafer, leaving a very fine semiconductive layer (30) on the substrate, this fine semiconductive layer comprising the photosensitive zones, the deposition and etching of color filters (18) on the semiconductive layer thus thinned.
摘要:
The invention relates to a photographing device whose bulk is intended to be reduced. According to the invention, a permanent division of the object field observed by the device is associated with a catadioptric configuration
摘要:
The invention relates to a photographing device whose bulk is intended to be reduced. According to the invention, a permanent division of the object field observed by the device is associated with a catadioptric configuration.
摘要:
The present invention relates to the fabrication of image sensors and especially to color image sensors. The image sensor includes a region in which there is a photosensitive matrix onto which the image to be converted into electronic signals is projected and an outer region comprising peripheral electronic circuits for driving the matrix or for processing the image signals. After formation on a substrate of a stack of conducting layers and insulating layers serving for the production of the matrix of the peripheral circuits, a substantial thickness of insulation is removed only in the region of the matrix before a mosaic of color filters is deposited so as to reduce the height of the filters relative to the photosensitive regions.
摘要:
The invention concerns a color image sensor that can be used to make a miniature camera, and a corresponding method for making this sensor.The image sensor comprises a transparent substrate (40) on the upper part of which are superimposed, successively, a mosaic of color filters (18), a very thin silicon layer (30) comprising photosensitive zones, and a stack of conductive layers (14) and insulating layers (16) defining image detection circuits enabling the collection of the electrical charges generated by the illumination of the photosensitive zones through the transparent substrate. The manufacturing method consists in producing the photosensitive circuits on a silicon wafer, transferring said wafer on to a temporary substrate, thinning the wafer down to a thickness of about three to 30 micrometers, depositing color filters on the surface of the remaining silicon layer and transferring the structure to a permanent transparent substrate and eliminating the temporary substrate.