公开(公告)号：US5168078A

公开(公告)日：1992-12-01

申请号：US631671

申请日：1990-12-21

申请人： Arnold Reisman ,  Iwona Turlik

发明人： Arnold Reisman ,  Iwona Turlik

IPC分类号： H01L23/48 ,  H01L23/535

CPC分类号： H01L23/535 ,  H01L23/481 ,  H01L2924/0002 ,  Y10S148/012 ,  Y10S148/135

摘要： A method of forming a high density semiconductor structure including one or more buried metal layers. One or more metal layers may be formed on a first semiconductor substrate, with the metal layer or layers being insulated from one another and from the substrate. One or more metal layers may be formed on the surface of a second substrate which may or may not be a semiconductor substrate. The topmost metal layers, either or both of which may have an insulating layer thereon, are placed in contact and heated in an oxidizing ambient atmosphere to form a bond therebetween. One or more vias connect the buried metal layers to the active devices in the substrates. The buried metal layers may form buried power and ground planes and buried metallization patterns for device interconnection.

摘要翻译： 一种形成包括一个或多个掩埋金属层的高密度半导体结构的方法。 一个或多个金属层可以形成在第一半导体衬底上，金属层彼此绝缘并且与衬底绝缘。 可以在可以是半导体衬底也可以不是半导体衬底的第二衬底的表面上形成一个或多个金属层。 将其中的一个或两者中的一个或两个可以具有绝缘层的最顶层金属层放置在接触中并在氧化环境气氛中加热以在它们之间形成结合。 一个或多个通孔将掩埋的金属层连接到基板中的有源器件。 掩埋金属层可以形成掩埋电源和接地层以及用于器件互连的掩埋金属化图案。

公开(公告)号：US5145714A

公开(公告)日：1992-09-08

申请号：US605688

申请日：1990-10-30

申请人： Arnold Reisman ,  Dorota Temple ,  Iwona Turlik

发明人： Arnold Reisman ,  Dorota Temple ,  Iwona Turlik

IPC分类号： H01L21/3205 ,  H01L21/768 ,  H05K3/22

CPC分类号： H01L21/76892 ,  H01L21/32051 ,  H05K3/225

摘要： A thermally activated method of depositing a metal on a localized microscopic portion of a substrate, that can be carried out at relatively low process temperatures, and that is particularly useful for depositing metals in an amount and purity sufficient for electrical conductivity on substrates containing microelectronic circuits and devices or their respective precursors. The method comprises heating a substrate in the presence of a vaporized metal-organic composition to a first temperature that is just below the temperature at which the vaporized metal-organic composition will dissociate into a metal and an organic-containing portion, and then raising the temperature of a localized portion of the heated substrate from the first temperature to a second, higher temperature at which the vaporized metal-organic composition will dissociate into a metal and an organic-containing portion but below the temperature at which the organic-containing portion will decompose to produce and deposit organic decomposition products upon the localized portion, and until an amount of the dissociated metal sufficient for electrical conductivity deposits upon the localized portion.

摘要翻译： 一种热激活的方法，其在基底的局部微观部分上沉积金属，其可以在相对较低的工艺温度下进行，并且特别适用于在含有微电子电路的基底上沉积足够导电性的量和纯度的金属 设备或其各自的前体。 该方法包括在蒸发的金属 - 有机组合物的存在下将基底加热至刚好低于蒸发的金属 - 有机组合物将分解成金属和含有机物部分的温度的第一温度，然后将 被加热的衬底的局部部分的温度从第一温度升至第二较高的温度，在此温度下蒸发的金属 - 有机组合物将分解成金属和含有机物的部分，但低于含有有机物部分的温度 分解产生并将有机分解产物沉积在局部部分上，并且直到一定量的离解金属足以导电沉积在局部部分上。

公开(公告)号：US5123310A

公开(公告)日：1992-06-23

申请号：US659990

申请日：1991-02-22

申请人： Christopher L. McManus

发明人： Christopher L. McManus

IPC分类号： B25B13/06 ,  B25B23/10 ,  B25B27/18

CPC分类号： B25B13/06 ,  B25B23/108 ,  B25B27/18

摘要： A socket for grippingly engaging the polygonal portion of a threaded fastener having deteriorated head surfaces and for transferring a moment from a tool to the fastener to turn the fastener. The socket includes a socket body, a receptacle for mating with a drive end of tool, a polygonal receptacle for receiving the polygonal portion of a fastener, and at least one set screw mounted in the socket body for urging a fastener received within the polygonal receptacle against a wall segment of the polygonal receptacle. A wrench for turning the socket is also disclosed.

摘要翻译： 用于夹紧地接合螺纹紧固件的多边形部分的插座，其具有劣化的头部表面并且用于将力矩从工具转移到紧固件以转动紧固件。 插座包括插座主体，用于与工具的驱动端配合的插座，用于容纳紧固件的多边形部分的多边形插座以及安装在插座主体中的至少一个固定螺钉，用于推动容纳在多边形插座内的紧固件 抵靠多边形插座的壁部分。 还公开了用于转动插座的扳手。

公开(公告)号：US5112439A

公开(公告)日：1992-05-12

申请号：US585238

申请日：1990-11-14

申请人： Arnold Reisman ,  Gary W. Jones

发明人： Arnold Reisman ,  Gary W. Jones

IPC分类号： C23C16/04 ,  C23C16/14 ,  H01L21/20 ,  H01L21/285 ,  H01L21/3065 ,  H01L21/768

CPC分类号： H01L21/02546 ,  C23C16/04 ,  C23C16/14 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/28525 ,  H01L21/28562 ,  H01L21/30655 ,  H01L21/76879 ,  Y10S438/913

摘要： An alternating cyclic (A.C.) method for selectively depositing materials, on the surface of a substrate without depositing the material on an adjacent mask layer. A gas of a reducible compound of the material and a reducing gas, preferably hydrogen, are simultaneously flowed through a reaction chamber to deposit the material on the substrate surface and to a lesser extent on the mask layer. Then, the flow of reducing gas is interrupted to cause the reducible compound gas to etch the material which forms on the mask layer in a disproportionation reaction. The deposition and etch steps are repeated in an alternating cyclic fashion until the requisite thickness is deposited. The process may take place in a single reaction chamber, using only the reducible compound gas and pulsed flow of the reducing gas.

摘要翻译： 用于在衬底的表面上选择性地沉积材料的交替循环（A.C.）方法，而不在相邻掩模层上沉积材料。 材料的可还原化合物和还原气体（优选氢气）的气体同时流过反应室，以将材料沉积在衬底表面上并在较小程度上沉积在掩模层上。 然后，中和还原气体的流动导致可还原化合物气体在歧化反应中蚀刻在掩模层上形成的材料。 以交替的循环方式重复沉积和蚀刻步骤，直到沉积必需的厚度。 该过程可以在单个反应室中进行，仅使用可还原的化合物气体和还原气体的脉冲流。

公开(公告)号：US5098494A

公开(公告)日：1992-03-24

申请号：US356005

申请日：1989-05-23

申请人： Arnold Reisman

发明人： Arnold Reisman

IPC分类号： C04B37/00

CPC分类号： C04B37/006 ,  C04B37/005 ,  C04B2235/6567 ,  C04B2235/658 ,  C04B2237/062 ,  C04B2237/064 ,  C04B2237/121 ,  C04B2237/16 ,  C04B2237/365 ,  C04B2237/366 ,  C04B2237/708 ,  C04B2237/72 ,  Y10T428/24926 ,  Y10T428/252 ,  Y10T428/2949

摘要： Ceramic parts may be bonded by forming bonding layers of silicon dioxide, silicon, metal or metal oxide on the parts, placing the bonding layers adjacent one another and heating in an oxidizing ambient atmosphere to form an oxide bond therebetween. Pressure may be applied between the ceramic parts to aid in bonding. A reliable bonded ceramic structure is thereby provided.

公开(公告)号：US5037775A

公开(公告)日：1991-08-06

申请号：US402794

申请日：1989-09-05

申请人： Arnold Reisman

发明人： Arnold Reisman

IPC分类号： C23C16/04 ,  C23C16/08 ,  C23C16/14 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3065 ,  H01L21/768

CPC分类号： H01L21/28562 ,  C23C16/04 ,  C23C16/14 ,  H01L21/30655 ,  H01L21/76879 ,  Y10S148/057 ,  Y10S148/058

摘要： An alternating cyclic (A.C.) method for selectively depositing single element semiconductor materials, on the surface of a substrate without depositing the material on an adjacent mask layer. A gas of a reducible compound of the material and a reducing gas, preferably hydrogen, are simultaneously flowed through a reaction chamber to deposit the material on the substrate surface and to a lesser extent on the mask layer. Then, the flow of reducing gas is interrupted to cause the reducible compound gas to etch the material which forms on the mask layer in a disproportionation reaction. The deposition and etch steps are repeated in an alternating cyclic fashion until the requisite thickness is deposited. The process may take place in a single reaction chamber, using only the reducible compound gas and pulsed flow of the reducing gas.

公开(公告)号：US2526639A

公开(公告)日：1950-10-24

申请号：US10804249

申请日：1949-08-01

申请人： DU PONT

发明人： CUPERY MARTIN E

IPC分类号： C08G12/46

CPC分类号： C08G12/46

公开(公告)号：US20040246065A1

公开(公告)日：2004-12-09

申请号：US10884963

申请日：2004-07-07

申请人： MCNC

发明人： Mark W. Roberson ,  Philip A. Deane ,  Charles Kenneth Williams

IPC分类号： H01P005/04

CPC分类号： H01P5/185 ,  H01P5/187

摘要： Three dimensional electronic and optical coupling devices that are capable of providing high speed coupling over a large frequency range while limiting the amount of space consumption in the communications network. An optical or electrical coupling device comprises a first substrate and a second substrate adjacent to the first substrate having one or more optical waveguides or microstrips formed thereon. The substrates will have disposed thereon conductive microstrips and/or dielectric elements. The one or more optical waveguides or microstrips formed on the first substrate correspond to at least one optical waveguides or microstrips formed on the second substrate so as to facilitate optical coupling between the corresponding waveguides. Precise spacing between the substrates and precise spacing between the optical waveguides or microstrips facilitate the requisite optical/RF coupling.

摘要翻译： 三维电子和光耦合器件能够在大的频率范围内提供高速耦合，同时限制通信网络中的空间消耗量。 光学或电耦合装置包括第一衬底和与第一衬底相邻的第二衬底，其具有在其上形成的一个或多个光波导或微带。 衬底将布置在其上导电微带和/或电介质元件。 形成在第一基板上的一个或多个光波导或微带对应于形成在第二基板上的至少一个光波导或微带，以便于相应波导之间的光耦合。 基板之间的精确间隔和光波导或微带之间的精确间隔有助于所需的光/ RF耦合。

公开(公告)号：US20040227703A1

公开(公告)日：2004-11-18

申请号：US10437091

申请日：2003-05-13

申请人： MCNC Research And Development Institute

发明人： Michael K. Lamvik ,  Gary E. McGuire ,  John S. Lewis III

IPC分类号： G09G005/00

CPC分类号： G02B27/0172 ,  G02B2027/0132 ,  G02B2027/014 ,  H04N5/7491

摘要： This invention provides a continuous display with non-uniform pixel density, forming a foveated display. A single, continuous display has a higher pixel density at the center of the display than at the periphery of the display. Where two continuous displays are used in accordance with the present invention, the central forward gaze of the viewer's image will be displayed in high resolution while the leftmost portion of the left eye display will be in low resolution and the rightmost portion of the right eye display will be in low resolution. The pixel resolution of the visual display may correspond to the visual acuity of the human eye. A foveated image display system using a continuous display with non-uniform pixel density increases the field of view while reducing the image bandwidth. A foveated image display system may be hardware-based by employing anamorphic lenses or sensors rather than relying upon image interpolation to modify the resolution of the resultant image data communicated to the continuous display with non-uniform pixel density.

摘要翻译： 本发明提供了具有不均匀像素密度的连续显示，形成移动显示。 单个连续显示器在显示器的中心处具有比在显示器周边处更高的像素密度。 在根据本发明使用两个连续显示器的情况下，观看者的图像的中心向前视线将以高分辨率显示，而左眼显示器的最左部分将具有低分辨率，并且右眼显示器的最右部分 将处于低分辨率。 视觉显示的像素分辨率可以对应于人眼的视力。 使用具有不均匀像素密度的连续显示器的移动图像显示系统在减小图像带宽的同时增加了视场。 移动图像显示系统可以通过使用变形镜头或传感器而不是依靠图像插值来修改以不均匀的像素密度传送到连续显示器的合成图像数据的分辨率来进行硬件化。

公开(公告)号：US20020188870A1

公开(公告)日：2002-12-12

申请号：US09878824

申请日：2001-06-11

申请人： MCNC

发明人： Fengmin Gong ,  Chandramouli Sargor ,  Feiyi Wang

IPC分类号： G06F011/30

CPC分类号： H04L63/0281 ,  H04L63/029 ,  H04L63/14

摘要： The invention relates to a reconfigurable scalable intrusion-tolerant network that is interposed between a service requesting client and a protected server to minimize the impact of intrusive events. The apparatus may include a proxy server for receiving the requests from a client and forwarding them to a protected server. Acceptance monitors receive the response from a protected server and apply one or more acceptance tests. A ballot monitor receives the result of the acceptance tests and determines a response to the client. The network may also include an intrusion sensor to detect threats to the network and a reconfigurer to alter the network forwarding scheme. Reconfiguration may include isolating network elements, creating parallel paths, implementing redundant operations, or assessing the validity of responses.

摘要翻译： 本发明涉及可重配置的可扩展入侵容忍网络，其被插入在服务请求客户端和受保护服务器之间以最小化入侵事件的影响。 该设备可以包括用于从客户端接收请求并将其转发到受保护服务器的代理服务器。 验收监视器从受保护的服务器接收响应，并应用一个或多个验收测试。 选票监视器收到验收结果，并确定对客户的回复。 网络还可以包括入侵传感器以检测对网络的威胁以及重新配置以改变网络转发方案。 重新配置可能包括隔离网络元素，创建并行路径，实施冗余操作或评估响应的有效性。