利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

118 条记录 (耗时 0.022 秒)

    Wafer cleaning apparatus and cleaning method using the same
    11.
    发明授权
    Wafer cleaning apparatus and cleaning method using the same 有权

    公开(公告)号：US11152228B2

    公开(公告)日：2021-10-19

    申请号：US15974415

    申请日：2018-05-08

    申请人： SK SILTRON CO., LTD.

    发明人： Jae Hwan Yi

    IPC分类号： H01L21/67 ,  H01L21/677 ,  B08B9/093

    摘要： A wafer cleaning apparatus may include a cleaning tank, a support part and a cleaning unit installed to be capable of moving upward or downward into the cleaning tank, and configured to inject a cleaning solution onto an inner wall of the cleaning tank. The cleaning unit may include an injection pipe disposed adjacent to the inner wall of the cleaning tank and having a plurality of injection holes, and an injection nozzle coupled to the injection pipe and formed to be inclined such that a diameter of the injection hole decreases in a direction from the injection pipe toward the cleaning tank.

    WAFER CASSETTE STOCKER AND WAFER CASSETTE DRYING METHOD USING THE SAME
    12.
    发明申请
    WAFER CASSETTE STOCKER AND WAFER CASSETTE DRYING METHOD USING THE SAME 有权

    公开(公告)号：US20210074565A1

    公开(公告)日：2021-03-11

    申请号：US17054255

    申请日：2018-11-26

    申请人： SK SILTRON CO., LTD.

    发明人： Dae Won KIM ,  Jong Joo LEE

    IPC分类号： H01L21/673 ,  H01L21/677

    摘要： An embodiment provides a wafer cassette stoker comprising: a cassette on which a plurality of wafers are loaded; a plurality of chambers disposed in one line while forming at least one layer, wherein the cassette after being cleaned is inserted in each of the chambers and a humidity control unit for supplying a compressed dry air (CDA) into the insides of the chambers so as to control humidity of the cassette.

    APPARATUS AND METHOD FOR MEASURING PARTICLE ON SURFACE OF WAFER
    13.
    发明申请
    APPARATUS AND METHOD FOR MEASURING PARTICLE ON SURFACE OF WAFER 审中-公开

    公开(公告)号：US20200158660A1

    公开(公告)日：2020-05-21

    申请号：US16263373

    申请日：2019-01-31

    申请人： SK SILTRON CO., LTD.

    发明人： Kang San KIM ,  Jae Deog LEE

    IPC分类号： G01N21/95 ,  H01L21/67 ,  H01L21/687 ,  G01N21/956 ,  G01N21/47

    摘要： An embodiment provides a method for measuring particles on a wafer surface, the method including: disposing and rotating a wafer on a stage; irradiating a laser in a first region of a center of a surface of the rotating wafer, a second region between the first region and a third region, and the third region at an edge thereof; and measuring a laser reflected from the first to third regions of the wafer, wherein a second output of the laser irradiated in the second region is larger than a first output of the laser irradiated in the first region and a third output of the laser irradiated in the third region is larger than the second output of the laser irradiated in the second region.

    Apparatus for growing single crystalline ingot and method for growing same
    14.
    发明授权
    Apparatus for growing single crystalline ingot and method for growing same 有权

    公开(公告)号：US10435809B2

    公开(公告)日：2019-10-08

    申请号：US15752719

    申请日：2016-06-07

    申请人： SK SILTRON CO., LTD.

    发明人： Do-Won Song ,  Hong-Woo Lee ,  Sang-Hee Kim ,  Ho-Jun Lee ,  Jung-Ryul Kim

    IPC分类号： C30B15/22 ,  C30B15/20 ,  C30B29/06 ,  C30B30/04 ,  C30B15/30

    摘要： The present invention relates to an apparatus for growing a single crystal ingot capable of uniformly controlling an oxygen concentration in a longitudinal direction and a radial direction of a single crystal ingot by uniformly maintaining a convection pattern on a silicon melt interface, and a method for growing the same. In an apparatus for growing a single crystal ingot and a method for growing the same according to the present invention, a horizontal magnet is positioned to be movable up and down by a magnet moving unit around a crucible, so that a maximum gauss position (MGP) is positioned to be higher than the silicon melt interface and simultaneously, a rate of increase in the MGP is controlled to 3.5 mm/hr to 6.5 mm/hr, and thus it possible to secure simplicity and symmetry of convection on the silicon melt interface. Accordingly, in the present invention, it is possible to reduce an Oi deviation and a BMD deviation in a longitudinal direction and a radial direction of a single crystal ingot, thereby improving quality.

    SLURRY COOLING DEVICE AND SLURRY SUPPLY SYSTEM HAVING THE SAME
    15.
    发明申请
    SLURRY COOLING DEVICE AND SLURRY SUPPLY SYSTEM HAVING THE SAME 审中-公开

    公开(公告)号：US20190210186A1

    公开(公告)日：2019-07-11

    申请号：US15973936

    申请日：2018-05-08

    申请人： SK SILTRON CO., LTD.

    发明人： Sang Ho LEE

    IPC分类号： B24B57/02 ,  B24B37/04

    CPC分类号： B24B57/02 ,  B24B37/04 ,  H01L21/02024

    摘要： According to the present invention, there is provided a slurry supply system including: a slurry mixing unit configured to mix slurry; a slurry supply unit in which the slurry mixed in the slurry mixing unit is stored and configured to supply the slurry to a polishing apparatus; a pipe configured to connect the slurry mixing unit and the slurry supply unit; and a slurry cooling unit installed in at least one of pipes configured to connect the slurry supply unit and the polishing apparatus to cool down the mixed slurry.

    Method for evaluating defective region of wafer
    19.
    发明授权
    Method for evaluating defective region of wafer 有权

    公开(公告)号：US11955386B2

    公开(公告)日：2024-04-09

    申请号：US17267566

    申请日：2018-12-27

    申请人： SK SILTRON CO., LTD.

    发明人： Jae Hyeong Lee

    IPC分类号： H01L21/66 ,  G01N21/88 ,  G01N21/95 ,  G01N21/956

    CPC分类号： H01L22/12 ,  G01N21/8851 ,  G01N21/9501 ,  G01N21/956

    摘要： This embodiment comprises: a step for preparing a sample wafer; a step for forming a first oxide film on the sample wafer at a temperature of 700-800° C.; a step for forming a second oxide film on the first oxide film at a temperature of 800-1000° C.; a step for forming a third oxide film on the second oxide film at a temperature of 1000-1100° C.; a step for forming a fourth oxide film on the third oxide film at a temperature of 1100-1200° C.; a step for removing the first to fourth oxide films; a step for forming a haze on the surface of the sample wafer by etching the sample wafer from which the first to fourth oxide films have been removed; and a step for evaluating a defective region of the sample wafer on the basis of the haze.

    AUTOMATIC ABRASION COMPENSATION SYSTEM OF LOWER PLATE AND WAFER LAPPING APPARATUS HAVING THE SAME
    20.
    发明公开
    AUTOMATIC ABRASION COMPENSATION SYSTEM OF LOWER PLATE AND WAFER LAPPING APPARATUS HAVING THE SAME 审中-公开

    公开(公告)号：US20230211457A1

    公开(公告)日：2023-07-06

    申请号：US17984537

    申请日：2022-11-10

    申请人： SK SILTRON CO., LTD.

    发明人： Jae Pyo LEE ,  Seong Cheol JEONG ,  In Joon JUNG

    IPC分类号： B24B37/34 ,  B24B37/005 ,  B24B37/30

    CPC分类号： B24B37/345 ,  B24B37/005 ,  B24B37/30 ,  H01L21/02013

    摘要： Disclosed are an automatic abrasion compensation system of a lower plate and a wafer lapping apparatus having the same. The automatic abrasion compensation system reduces wafer misloading and errors in wafer loading inspection occurring when the distance between the lower plate and a transfer robot is gradually increased due to abrasion of the lower plate during a lapping process. The automatic abrasion compensation system includes an ultrasonic sensor provided on the transfer robot, a jig located directly under the ultrasonic sensor and mounted on the lower plate, a controller configured to acquire measurement distance information by measuring a distance from the jig through the ultrasonic sensor, to compare the measurement distance information with set reference distance information and to generate an adjustment control signal, and a driver configured to automatically adjust a Z-axis position of the transfer robot depending on the adjustment control signal transmitted by the controller.