公开(公告)号：US20140017602A1

公开(公告)日：2014-01-16

申请号：US14026315

申请日：2013-09-13

申请人： LG DISPLAY CO., LTD.

发明人： Tae Gyun KIM

IPC分类号： G02F1/13

CPC分类号： G02F1/1303 ,  G02F1/134363 ,  G02F2001/13625 ,  G02F2201/40 ,  G03F1/144 ,  G03F1/36

摘要： A photo mask is disclosed.The photo mask includes a mask substrate, and a mask pattern formed to include a plurality of unit mask patterns which are arranged in a single line for a fine pattern formation. The unit mask pattern is configured to include a body portion positioned at a center and wing portions formed in a triangular shape at both sides of the body portion.

摘要翻译： 公开了一种光罩。 光掩模包括掩模基板和形成为包括多个单位掩模图案的掩模图案，这些单元掩模图案布置在单行中以进行精细图案形成。 单位掩模图案被构造为包括位于中心的主体部分和在主体部分的两侧形成为三角形形状的翼部。

公开(公告)号：US20130200385A1

公开(公告)日：2013-08-08

申请号：US13391277

申请日：2012-02-08

申请人： Pei Jia ,  Liu-yang Yang

发明人： Pei Jia ,  Liu-yang Yang

IPC分类号： H01L33/08

CPC分类号： G02F1/1362 ,  G02F2001/134372 ,  G02F2001/13625

摘要： The present invention provides a thin film transistor (TFT) array substrate and a method for manufacturing the same. A transparent and electrically conductive layer and a first metal layer are deposited on a substrate, and a first multi tone mask is utilized to form gate electrodes and common electrodes. A gate insulating layer, a semiconductor layer and a second metal layer are deposited on the substrate, and a second multi tone mask is utilized to form source electrodes, drain electrodes and pixel electrodes. The present invention can simplify the manufacturing process thereof.

摘要翻译： 本发明提供一种薄膜晶体管（TFT）阵列基板及其制造方法。 在衬底上沉积透明导电层和第一金属层，并且使用第一多色调掩模来形成栅电极和公共电极。 栅极绝缘层，半导体层和第二金属层沉积在衬底上，并且使用第二多色调掩模来形成源电极，漏电极和像素电极。 本发明可以简化其制造过程。

公开(公告)号：US20130122624A1

公开(公告)日：2013-05-16

申请号：US13735166

申请日：2013-01-07

申请人： Chaoyong DENG ,  Seung Moo Rim

发明人： Chaoyong DENG ,  Seung Moo Rim

IPC分类号： H01L33/62

CPC分类号： H01L29/66765 ,  G02F1/1362 ,  G02F2001/13625 ,  H01L24/24 ,  H01L27/1214 ,  H01L27/1288 ,  H01L33/62 ,  H01L2924/15788 ,  H01L2924/00

摘要： A TFT LCD array substrate and a manufacturing method thereof. The manufacturing method includes the steps of: forming a thin film transistor on a substrate to form a gate line and a gate electrode connected with the gate line on the substrate; forming a gate insulating layer and a semiconductor layer on the gate electrode; forming an ohmic contact layer on the semiconductor layer; forming a transparent pixel electrode layer and a source/drain electrode metal layer in sequence on the resultant substrate, wherein the transparent pixel electrode layer is electrically insulated from the gate line and the gate electrode, and the transparent pixel electrode layer forms an ohmic contact with two sides of the semiconductor layer via the ohmic contact layer; and performing masking and etching with a gray tone mask with respect to the resultant substrate to form a transparent pixel electrode, a source/drain electrode and a data line simultaneously.

摘要翻译： 一种TFT LCD阵列基板及其制造方法。 该制造方法包括以下步骤：在衬底上形成薄膜晶体管以形成与衬底上的栅极线连接的栅极线和栅电极; 在栅电极上形成栅极绝缘层和半导体层; 在所述半导体层上形成欧姆接触层; 在所得到的基板上依次形成透明像素电极层和源极/漏极电极金属层，其中透明像素电极层与栅极线和栅电极电绝缘，并且透明像素电极层与 经由欧姆接触层的半导体层的两侧; 并且使用相对于所得到的基板的灰度色调掩模进行掩模和蚀刻，以同时形成透明像素电极，源极/漏极电极和数据线。

公开(公告)号：US20130087934A1

公开(公告)日：2013-04-11

申请号：US13644043

申请日：2012-10-03

申请人： LG Display Co., Ltd.

发明人： Youn Oh Kim ,  Jong Chun Lim ,  Jae Hyun You

IPC分类号： H01L21/027 ,  H01L23/544

CPC分类号： H01L23/544 ,  G02F2001/13625 ,  H01L27/1259 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a substrate for a display device comprises forming a first pattern within an active region of the substrate and at the same time forming a first overlay pattern at corner regions of the active region; and forming a second pattern within the active region of the substrate and at the same time forming a second overlay pattern at corner regions of the active region, wherein the first overlay pattern includes gradations arranged in a predetermined direction, and the second overlay pattern includes gradations arranged in the predetermined direction to face the gradations of the first overlay pattern.

摘要翻译： 制造显示装置用基板的方法包括：在所述基板的有源区域内形成第一图案，同时在所述有源区域的角部区域形成第一覆盖图案; 以及在所述有源区域的有效区域内形成第二图案，并且同时在所述有源区域的角区域处形成第二覆盖图案，其中所述第一覆盖图案包括沿预定方向布置的灰度，并且所述第二覆盖图案包括灰度 布置在预定方向上以面对第一覆盖图案的灰度。

公开(公告)号：US08373173B2

公开(公告)日：2013-02-12

申请号：US13567196

申请日：2012-08-06

申请人： Hisashi Ohtani

发明人： Hisashi Ohtani

IPC分类号： H01L29/04

CPC分类号： H01L33/16 ,  G02B5/30 ,  G02B27/017 ,  G02B27/0172 ,  G02B2027/0178 ,  G02F2001/13625 ,  G09G3/3225 ,  H01L27/12 ,  H01L27/124 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627

摘要： The object of the present invention is to form a low-concentration impurity region with good accuracy in a top gate type TFT. Phosphorus is added to a semiconductor layer by using a pattern made of a conductive film as a mask to form an N-type impurity region in a self-alignment manner. A positive photoresist is applied to a substrate so as to cover the pattern and then is exposed to light applied to the back of the substrate and then is developed, whereby a photoresist 110 is formed. The pattern is etched by using the photoresist pattern as an etching mask to form a gate electrode. A channel forming region, a source region, a drain region, and low-concentration impurity regions, are formed in the semiconductor layer in a self-alignment manner by using the gate electrode as a doping mask.

公开(公告)号：US08354305B2

公开(公告)日：2013-01-15

申请号：US13096380

申请日：2011-04-28

申请人： Chaoyong Deng ,  Seung Moo Rim

发明人： Chaoyong Deng ,  Seung Moo Rim

IPC分类号： H01L21/335

CPC分类号： H01L29/66765 ,  G02F1/1362 ,  G02F2001/13625 ,  H01L24/24 ,  H01L27/1214 ,  H01L27/1288 ,  H01L33/62 ,  H01L2924/15788 ,  H01L2924/00

摘要： A TFT LCD array substrate and a manufacturing method thereof. The manufacturing method includes the steps of: forming a thin film transistor on a substrate to form a gate line and a gate electrode connected with the gate line on the substrate; forming a gate insulating layer and a semiconductor layer on the gate electrode; forming an ohmic contact layer on the semiconductor layer; forming a transparent pixel electrode layer and a source/drain electrode metal layer in sequence on the resultant substrate, wherein the transparent pixel electrode layer is electrically insulated from the gate line and the gate electrode, and the transparent pixel electrode layer forms an ohmic contact with two sides of the semiconductor layer via the ohmic contact layer; and performing masking and etching with a gray tone mask with respect to the resultant substrate to form a transparent pixel electrode, a source/drain electrode and a data line simultaneously.

摘要翻译： 一种TFT LCD阵列基板及其制造方法。 该制造方法包括以下步骤：在衬底上形成薄膜晶体管以形成与衬底上的栅极线连接的栅极线和栅电极; 在栅电极上形成栅极绝缘层和半导体层; 在所述半导体层上形成欧姆接触层; 在所得到的基板上依次形成透明像素电极层和源极/漏极电极金属层，其中透明像素电极层与栅极线和栅电极电绝缘，并且透明像素电极层与 经由欧姆接触层的半导体层的两侧; 并且使用相对于所得到的基板的灰度色调掩模进行掩模和蚀刻，以同时形成透明像素电极，源极/漏极电极和数据线。

公开(公告)号：US08030658B2

公开(公告)日：2011-10-04

申请号：US12240367

申请日：2008-09-29

申请人： Hisashi Ohtani

发明人： Hisashi Ohtani

IPC分类号： H01L29/04

CPC分类号： H01L33/16 ,  G02B5/30 ,  G02B27/017 ,  G02B27/0172 ,  G02B2027/0178 ,  G02F2001/13625 ,  G09G3/3225 ,  H01L27/12 ,  H01L27/124 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627

摘要： The object of the present invention is to form a low-concentration impurity region with good accuracy in a top gate type TFT. Phosphorus is added to a semiconductor layer by using a pattern made of a conductive film as a mask to form an N-type impurity region in a self-alignment manner. A positive photoresist is applied to a substrate so as to cover the pattern and then is exposed to light applied to the back of the substrate and then is developed, whereby a photoresist 110 is formed. The pattern is etched by using the photoresist pattern as an etching mask to form a gate electrode. A channel forming region, a source region, a drain region, and low-concentration impurity regions, are formed in the semiconductor layer in a self-alignment manner by using the gate electrode as a doping mask.

摘要翻译： 本发明的目的是在顶栅型TFT中形成具有高精度的低浓度杂质区。 通过使用由导电膜形成的图案作为掩模将磷添加到半导体层中，以自对准方式形成N型杂质区。 将正性光致抗蚀剂施加到基板上以覆盖图案，然后暴露于施加到基板背面的光，然后显影，由此形成光致抗蚀剂110。 通过使用光致抗蚀剂图案作为蚀刻掩模来蚀刻图案以形成栅电极。 通过使用栅极作为掺杂掩模，以自对准的方式在半导体层中形成沟道形成区域，源极区域，漏极区域和低浓度杂质区域。

公开(公告)号：US20110171793A1

公开(公告)日：2011-07-14

申请号：US13053047

申请日：2011-03-21

申请人： Ji-Hyun JUNG ,  Dong-Young Kim

发明人： Ji-Hyun JUNG ,  Dong-Young Kim

IPC分类号： H01L21/336

CPC分类号： G02F1/136286 ,  G02F1/13458 ,  G02F2001/136231 ,  G02F2001/136236 ,  G02F2001/13625

摘要： A method for fabricating a display includes providing a first substrate divided into a pixel part and first and second pad parts, forming a gate electrode and a gate line in the pixel part of the first substrate and forming a gate pad line in the first pad part of the first substrate, forming a first insulation film and a semiconductor film over the gate electrode, the gate line and the gate pad line, forming an active pattern over the gate electrode from the semiconductor film with the first insulation film interposed therebetween and forming a contact hole exposing a portion of the gate pad line using a single mask, forming source and drain electrodes in the pixel part, forming a pixel electrode in the pixel part, forming a gate pad electrode electrically connected with the gate pad line via the contact hole, forming a second insulation film over the pixel electrode and the gate pad electrode, exposing a portion of the pixel electrode and at least one portion of the gate pad electrode, and attaching the first substrate and a second substrate.

摘要翻译： 一种制造显示器的方法包括：提供分为像素部分和第一和第二焊盘部分的第一衬底，在第一衬底的像素部分中形成栅电极和栅极线，并在第一焊盘部分中形成栅极焊盘线 在所述栅电极，所述栅极线和所述栅极焊盘线上形成第一绝缘膜和半导体膜，从所述半导体膜在所述栅电极上形成有源图案，并且在所述第一绝缘膜和半导体膜之间形成第一绝缘膜， 接触孔使用单个掩模暴露栅极焊盘线的一部分，在像素部分中形成源电极和漏电极，在像素部分中形成像素电极，形成通过接触孔与栅极焊盘线电连接的栅极焊盘电极 在所述像素电极和所述栅极焊盘电极之上形成第二绝缘膜，暴露所述像素电极的一部分和所述栅极焊盘的至少一部分 e，并且附接第一基板和第二基板。

公开(公告)号：US07911551B2

公开(公告)日：2011-03-22

申请号：US11819122

申请日：2007-06-25

申请人： Ji-Hyun Jung ,  Dong-Young Kim

发明人： Ji-Hyun Jung ,  Dong-Young Kim

IPC分类号： G02F1/136

CPC分类号： G02F1/136286 ,  G02F1/13458 ,  G02F2001/136231 ,  G02F2001/136236 ,  G02F2001/13625

摘要： A method for fabricating a display includes providing a first substrate divided into a pixel part and first and second pad parts, forming a gate electrode and a gate line in the pixel part of the first substrate and forming a gate pad line in the first pad part of the first substrate, forming a first insulation film and a semiconductor film over the gate electrode, the gate line and the gate pad line, forming an active pattern over the gate electrode from the semiconductor film with the first insulation film interposed therebetween and forming a contact hole exposing a portion of the gate pad line using a single mask, forming source and drain electrodes in the pixel part, forming a pixel electrode in the pixel part, forming a gate pad electrode electrically connected with the gate pad line via the contact hole, forming a second insulation film over the pixel electrode and the gate pad electrode, exposing a portion of the pixel electrode and at least one portion of the gate pad electrode, and attaching the first substrate and a second substrate.

摘要翻译： 一种制造显示器的方法包括：提供分为像素部分和第一和第二焊盘部分的第一衬底，在第一衬底的像素部分中形成栅电极和栅极线，并在第一焊盘部分中形成栅极焊盘线 在所述栅电极，所述栅极线和所述栅极焊盘线上形成第一绝缘膜和半导体膜，从所述半导体膜在所述栅电极上形成有源图案，并且在所述第一绝缘膜和半导体膜之间形成第一绝缘膜， 接触孔使用单个掩模暴露栅极焊盘线的一部分，在像素部分中形成源电极和漏电极，在像素部分中形成像素电极，形成通过接触孔与栅极焊盘线电连接的栅极焊盘电极 在所述像素电极和所述栅极焊盘电极之上形成第二绝缘膜，暴露所述像素电极的一部分和所述栅极焊盘的至少一部分 e，并且附接第一基板和第二基板。

公开(公告)号：US07687330B2

公开(公告)日：2010-03-30

申请号：US12270008

申请日：2008-11-13

申请人： Haijun Qiu ,  Zhangtao Wang ,  Tae Yup Min

发明人： Haijun Qiu ,  Zhangtao Wang ,  Tae Yup Min

IPC分类号： H01L21/00

CPC分类号： H01L27/1288 ,  G02F2001/133357 ,  G02F2001/136231 ,  G02F2001/136236 ,  G02F2001/13625 ,  H01L27/1214

摘要： A thin film transistor liquid crystal display (TFT-LCD) pixel structure comprising: a gate line and a gate electrode formed on a substrate; a first insulating layer, a semiconductor layer, and a doped semiconductor layer formed sequentially on the gate electrode and the gate line, wherein an isolating groove is formed above the gate line which disconnects the semiconductor layer on the gate line; a second insulating layer covering the isolating groove and a portion of the substrate where the gate line and the gate are not formed; a pixel electrode formed on the second insulating layer, wherein the pixel electrode is integral with a drain electrode and is connected with the doped semiconductor layer on the gate electrode at a place where the drain electrode is formed; a source electrode, which is a portion of a data line, formed on the doped semiconductor layer; and a channel formed between the source electrode and the drain electrode.

摘要翻译： 一种薄膜晶体管液晶显示器（TFT-LCD）像素结构，包括：栅极线和形成在衬底上的栅电极; 在栅电极和栅极线上依次形成第一绝缘层，半导体层和掺杂半导体层，其中在栅极线上方形成隔离槽，该栅极线与栅极线上的半导体层断开; 覆盖隔离槽的第二绝缘层和不形成栅极线和栅极的衬底的一部分; 形成在所述第二绝缘层上的像素电极，其中所述像素电极与漏电极成一体，并且在形成所述漏电极的位置处与所述栅电极上的所述掺杂半导体层连接; 源极，其是形成在所述掺杂半导体层上的数据线的一部分; 以及形成在源电极和漏极之间的沟道。