Electron Beam Emitter
    11.
    发明申请
    Electron Beam Emitter 有权
    电子束发射器

    公开(公告)号:US20080143235A1

    公开(公告)日:2008-06-19

    申请号:US11964273

    申请日:2007-12-26

    CPC classification number: H01J33/04 Y10T29/49895

    Abstract: An exit window for an electron beam emitter through which electrons pass in an electron beam includes a structural foil for metal to metal bonding with the electron beam emitter. The structural foil has a central opening formed therethrough. A window layer of high thermal conductivity extends over the central opening of the structural foil and provides a high thermal conductivity region through which the electrons can pass.

    Abstract translation: 电子束通过的电子束发射器的出射窗包括用于与电子束发射体进行金属与金属结合的结构箔。 结构箔具有从其形成的中心开口。 具有高导热性的窗口层在结构箔的中心开口上延伸,并提供高导电性区域,电子可通过该区域通过。

    Method of manufacturing a window transparent for electrons of an electron beam in particular of an X-ray source
    12.
    发明授权
    Method of manufacturing a window transparent for electrons of an electron beam in particular of an X-ray source 失效
    制造电子束特别是X射线源的电子透明窗口的方法

    公开(公告)号:US07386096B2

    公开(公告)日:2008-06-10

    申请号:US10574452

    申请日:2004-10-06

    Abstract: The present invention relates to a method of manufacturing a window transparent for electrons of an electron beam (E), in particular of an X-ray source. In order to enable a less costly and elaborate manufacture of such a window and in order to prevent unwanted sharp edges in a window area which may damage the window foil (2), a method is proposed comprising the steps of:—providing on a surface (11) of a carrier element (1) to which a window foil (2) shall be a fixed a receiving area (13, 16) for receiving a soldering material (3) used for fixing said window foil (2) to said carrier element (1), said carrier element (1) comprising a through hole (12) for the transmission of said electrons (E),—covering said surface (11) having said receiving area (13, 16) with a soldering material (3) such that substantially only said receiving area (13, 16) is filled with soldering material (3),—placing said window foil (2) on top of said surface (1) and—heating said soldering material (3) for fixing said window foil (2) to said surface (11).

    Abstract translation: 本发明涉及一种制造电子束(E),特别是X射线源的电子透明窗口的方法。 为了能够实现这种窗口的成本更低且更精细的制造,并且为了防止可能损坏窗帘(2)的窗口区域中的不希望的尖锐边缘,提出了一种方法,包括以下步骤:提供在表面上 (2)的固定接收区域(13,16),用于接收用于将所述窗户箔(2)固定到所述载体上的焊接材料(3)的载体元件(1) 元件(1),所述载体元件(1)包括用于传输所述电子(E)的通孔(12), - 用焊接材料(3)覆盖具有所述接收区域(13,16)的所述表面(11) ),使得基本上只有所述接收区域(13,16)填充有焊接材料(3), - 将所述窗口箔(2)放置在所述表面(1)的顶部上并加热所述焊接材料(3)以固定所述 (2)到所述表面(11)。

    Electron beam emitter
    13.
    发明授权

    公开(公告)号:US07265367B2

    公开(公告)日:2007-09-04

    申请号:US10751676

    申请日:2004-01-05

    CPC classification number: H01J33/04 Y10T29/49895

    Abstract: An exit window for an electron beam emitter through which electrons pass in an electron beam includes a structural foil for metal to metal bonding with the electron beam emitter. The structural foil has a central opening formed therethrough. A window layer of high thermal conductivity extends over the central opening of the structural foil and provides a high thermal conductivity region through which the electrons can pass.

    Radiation window and method of manufacture
    14.
    发明授权
    Radiation window and method of manufacture 有权
    辐射窗和制造方法

    公开(公告)号:US07233647B2

    公开(公告)日:2007-06-19

    申请号:US11411996

    申请日:2006-04-25

    Abstract: A radiation window device to transmit radiation as part of an x-ray source or detector includes a support to be subject to a substantial vacuum, and an opening configured to transmit radiation. A film is mounted directly on the support across the opening, and has a material and a thickness selected to transmit soft x-rays. An adhesive directly adheres the film to the support. A coating covers exposed portions of at least one of the evacuated or ambient sides of the film, and covers a portion of the support surrounding the film. The support, film and adhesive form a vacuum tight assembly capable of maintaining the substantial vacuum when one side is subject to the substantial vacuum. In addition, the vacuum tight assembly can withstand a temperature of greater than approximately 250 degrees Celsius.

    Abstract translation: 用于透射辐射作为x射线源或检测器的一部分的辐射窗装置包括要承受实质真空的支撑件和被配置成透射辐射的开口。 薄膜直接安装在穿过开口的支撑件上,并且具有选择用于透射软X射线的材料和厚度。 粘合剂直接将膜粘附到载体上。 涂层覆盖膜的至少一个抽真空或环境侧的暴露部分,并且覆盖围绕膜的一部分载体。 支撑件,膜和粘合剂形成真空紧固组件,其能够在一侧经受基本真空时保持实质的真空。 此外,真空密封组件可以承受大于约250摄氏度的温度。

    Source for energetic electrons
    15.
    发明申请
    Source for energetic electrons 有权
    高能电子源

    公开(公告)号:US20050225224A1

    公开(公告)日:2005-10-13

    申请号:US10822890

    申请日:2004-04-13

    CPC classification number: H01J33/04 H01J33/00

    Abstract: There is described, for example, a generally cylindrical generator of energetic electrons that releases electrons from a vacuum enclosure into a surrounding space including into the atmosphere where the electrons may be used for a variety of applications including clean up of a flowing gas stream. Described is an efficient electron generator that emits more beam power than past structures in this class of devices and does so in connection with the treatment of gases or surfaces requiring treatment.

    Abstract translation: 例如,描述了一种通常为圆柱形的能量电子发生器,其将电子从真空外壳释放到包括进入气氛的周围空间中,其中电子可用于各种应用,包括清理流动的气流。 描述的是一种有效的电子发生器,其发射比这类装置中的过去结构更多的光束功率,并且与处理需要处理的气体或表面有关。

    Non-dispersive charged particle energy analyzer
    16.
    发明申请
    Non-dispersive charged particle energy analyzer 失效
    非分散带电粒子能量分析仪

    公开(公告)号:US20050045832A1

    公开(公告)日:2005-03-03

    申请号:US10961631

    申请日:2004-10-08

    Abstract: An electron energy analyzer including a curved electrostatic low-pass reflector and a high-pass electrostatic transmissive filter. The reflector comprises a curved grid, preferably ellipsoidal, and an absorber electrode placed in back of the curved grid with respect to the electron source and biased negatively to the curved grid to act as a reflective low-pass filter and a collimating optics for the reflected beam. The transmissive filter includes first and second flat grids extending across the collimated reflected beam. The second grid on the side of the first grid opposite the curved grid is biased negatively to the first grid and the absorber electrode. A field free region is created by applying the same bias to the curved grid, the first grid, and chamber sidewall sleeve. An electron detector detects all electrons passed by the second grid in an energy band in the overlap of the high-pass and low-pass bands.

    Abstract translation: 一种电子能量分析仪,包括弯曲静电低通反射器和高通静电透射滤光片。 反射器包括弯曲格栅,优选椭圆形,和相对于电子源放置在弧形格栅背面的吸收电极,并且负反射地偏置到弯曲网格以用作反射低通滤波器和用于反射的准直光学器件 光束。 透射滤光器包括延伸穿过准直反射光束的第一和第二平坦栅格。 与第一格架相对的弧形栅格侧的第二格栅被负向偏置到第一格栅和吸收体电极。 通过将相同的偏压施加到弯曲格栅,第一格栅和室侧壁套筒来产生无场区域。 电子检测器通过高通和低通带重叠的能带检测由第二格栅通过的所有电子。

    Electron accelerator having a wide electron beam

    公开(公告)号:US20030218414A1

    公开(公告)日:2003-11-27

    申请号:US10364295

    申请日:2003-02-10

    Inventor: Tzvi Avnery

    CPC classification number: H01J33/04 G21K5/04 G21K5/10

    Abstract: An electron accelerator for generating an electron beam includes a vacuum chamber having an outer perimeter and an electron beam exit window. The exit window has a central region and a first end region. An electron generator is positioned within the vacuum chamber for generating electrons. The electron generator and the vacuum chamber are shaped and positioned relative to each other to accelerate the electrons in an electron beam out through the exit window. The electrons pass through the central region of the exit window substantially perpendicular to the exit window and through the first end region of the exit window angled outwardly relative to the exit window. At least a portion of the outwardly angled electrons are directed beyond the perimeter of the electron accelerator.

    Electron accelerator having a wide electron beam that extends further out and is wider than the outer periphery of the device

    公开(公告)号:US06545398B1

    公开(公告)日:2003-04-08

    申请号:US09209024

    申请日:1998-12-10

    Applicant: Tzvi Avnery

    Inventor: Tzvi Avnery

    CPC classification number: H01J33/04 G21K5/04 G21K5/10

    Abstract: An electron accelerator for generating an electron beam includes a vacuum chamber having an outer perimeter and an electron beam exit window. The exit window has a central region and a first end region. An electron generator is positioned within the vacuum chamber for generating electrons. The electron generator and the vacuum chamber are shaped and positioned relative to each other to accelerate the electrons in an electron beam out through the exit window. The electrons pass through the central region of the exit window substantially perpendicular to the exit window and through the first end region of the exit window angled outwardly relative to the exit window. At least a portion of the outwardly angled electrons are directed beyond the perimeter of the electron accelerator.

    Abstract translation: 用于产生电子束的电子加速器包括具有外周边和电子束出射窗的真空室。 出口窗口具有中心区域和第一端部区域。 电子发生器位于真空室内以产生电子。 电子发生器和真空室相对于彼此成形和定位,以加速通过出射窗出射的电子束中的电子。 电子通过出射窗的中心区域大致垂直于出射窗口并且穿过出射窗口的第一端部区域相对于出射窗口向外成角度。 向外成角度的电子的至少一部分被引导超过电子加速器的周边。

    Actinic radiation source and uses therefor
    19.
    发明授权
    Actinic radiation source and uses therefor 有权
    光化辐射源及其用途

    公开(公告)号:US06224445B1

    公开(公告)日:2001-05-01

    申请号:US09615006

    申请日:2000-07-12

    CPC classification number: H05H6/00 G21G1/10 H01J5/18 H01J33/04

    Abstract: An actinic radiation source (20) includes an anode (36) upon which an electron beam from a cathode ray gun (24) impinges. The anode (36) includes a window area (52) formed by a silicon membrane. The electron beam upon striking the anode (36) permeates the window area (52) to penetrate into medium surrounding actinic radiation source (20). A method for making an anode (36) uses a substrate having both a thin first layer (44) and a thicker second layer (46) of single crystal silicon material between which is interposed a layer of etch stop material (48). The second layer (46) is anisotropically etched to the etch stop material (48) to define the electron beam window area (52) on the first layer (44). That portion of the etch stop layer (48) exposed by etching through, the second layer (46) is then removed. The anode (36) thus fabricated has a thin, monolithic, low-stress and defect-free silicon membrane electron beam window area (52) provided by the first layer of the substrate.

    Abstract translation: 光化辐射源(20)包括阳极(36),来自阴极射线枪(24)的电子束撞击该阳极。 阳极(36)包括由硅膜形成的窗口区域(52)。 撞击阳极(36)时的电子束渗透窗口区域(52)以穿透到围绕光化辐射源(20)的介质中。 用于制造阳极(36)的方法使用具有薄的第一层(44)和较厚的单晶硅材料第二层(46)的衬底,在衬底之间插入有一层蚀刻停止材料(48)。 第二层(46)被各向异性蚀刻到蚀刻停止材料(48)上以限定第一层(44)上的电子束窗口区域(52)。 然后去除通过蚀刻暴露的蚀刻停止层(48)的部分,第二层(46)。 由此制造的阳极(36)具有由基板的第一层提供的薄的,整体的,低应力和​​无缺陷的硅膜电子束窗口区域(52)。

    Actinic radiation source and uses thereofor
    20.
    发明授权
    Actinic radiation source and uses thereofor 失效
    光化辐射源及其用途

    公开(公告)号:US6140755A

    公开(公告)日:2000-10-31

    申请号:US872697

    申请日:1997-06-11

    CPC classification number: H05H6/00 G21G1/10 H01J33/04 H01J5/18

    Abstract: An actinic radiation source (20) includes an anode (36) upon which an electron beam from a cathode ray gun (24) impinges. The anode (36) includes a window area (52) formed by a silicon membrane. The electron beam upon striking the anode (36) permeates the window area (52) to penetrate into medium surrounding actinic radiation source (20). A method for making an anode (36) uses a substrate having both a thin first layer (44) and a thicker second layer (46) of single crystal silicon material between which is interposed a layer of etch stop material (48). The second layer (46) is anisotropically etched to the etch stop material (48) to define the electron beam window area (52) on the first layer (44). That portion of the etch stop layer (48) exposed by etching through the second layer (46) is then removed. The anode (36) thus fabricated has a thin, monolithic, low-stress and defect-free silicon membrane electron beam window area (52) provided by the first layer of the substrate.

    Abstract translation: 光化辐射源(20)包括阳极(36),来自阴极射线枪(24)的电子束撞击该阳极。 阳极(36)包括由硅膜形成的窗口区域(52)。 撞击阳极(36)时的电子束渗透窗口区域(52)以穿透到围绕光化辐射源(20)的介质中。 用于制造阳极(36)的方法使用具有薄的第一层(44)和较厚的单晶硅材料第二层(46)的衬底,在衬底之间插入有一层蚀刻停止材料(48)。 第二层(46)被各向异性蚀刻到蚀刻停止材料(48)上以限定第一层(44)上的电子束窗口区域(52)。 然后去除通过蚀刻通过第二层(46)暴露的蚀刻停止层(48)的那部分。 由此制造的阳极(36)具有由基板的第一层提供的薄的,整体的,低应力和​​无缺陷的硅膜电子束窗口区域(52)。

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