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167 条记录 (耗时 0.027 秒)

    Method and device for passivation of the resonator end faces of semiconductor lasers based on III-V semiconductor material
    11.
    发明授权
    Method and device for passivation of the resonator end faces of semiconductor lasers based on III-V semiconductor material 失效
    用于钝化基于III-V半导体材料的半导体激光器谐振器端面的方法和装置

    公开(公告)号：US07033852B2

    公开(公告)日：2006-04-25

    申请号：US10381810

    申请日：2001-09-25

    申请人： Karl Häusler ,  Nils Kirstaedter

    发明人： Karl Häusler ,  Nils Kirstaedter

    IPC分类号： H01L21/00 ,  H01S5/00

    CPC分类号： H01S5/0281 ,  H01S5/0202 ,  H01S5/0282 ,  H01S5/0425

    摘要： A method and device for passivating the resonator end faces, in particular the cleaved edges of semiconductor laser diodes, by high-temperature epitaxy of the quaternary compound semiconductor InxGa1-xAsyP1-y, where (0≦x≦1 and 0≦y≦1). To passivate the InxGa1-xAsyP1-y, an additional passivation layer may be applied in situ. The semiconductor crystal is brought to the temperature required for the epitaxy by being heated. To avoid thermal destruction of the contact metal during the epitaxy, the metal is only deposited after the cleaving operation and the passivation. The deposition of the metal on the passivated laser bar is carried out by means of special equipment that allows deposition of metal on the entire surface of the laser and at the same time prevents vapour deposition on the cleaved edges. The method and device can be applied to the production of high-power laser diodes.

    摘要翻译： 通过四元化合物半导体的高温外延钝化谐振器端面，特别是半导体激光二极管的切割边缘的方法和装置。 其中（0 <= x <= 1且0 <= y <= 1）。 为了使钝化层钝化，可以将附加的钝化层（例如， 原位应用 通过加热使半导体晶体达到外延所需的温度。 为了在外延期间避免接触金属的热破坏，金属仅在分裂操作和钝化之后沉积。 金属在钝化激光棒上的沉积是通过特殊的设备进行的，这些设备允许金属沉积在激光的整个表面上，同时防止在切割边缘上的气相沉积。 该方法和装置可应用于大功率激光二极管的生产。

    Laser bar locking apparatus
    13.
    发明授权
    Laser bar locking apparatus 失效
    激光棒锁定装置

    公开(公告)号：US06879620B2

    公开(公告)日：2005-04-12

    申请号：US10773270

    申请日：2004-02-09

    申请人： Noboru Oshima

    发明人： Noboru Oshima

    IPC分类号： H01L21/205 ,  H01S5/028 ,  H01S3/08

    CPC分类号： H01S5/0281

    摘要： A semiconductor laser chip has an active layer, an allover electrode forming a lower face of the laser chip and a light emitting end surface of the laser chip. A Si thin film is formed on the light emitting end surface of the laser chip. An upper Si thin film is formed on an upper portion of the light emitting end surface and a lower Si thin film is formed on a lower portion thereof. The lower Si thin film is smaller in thickness than the upper Si thin film. Smaller thickness of the lower Si thin film prevents a component of the allover electrode from diffusing into the upper Si thin film that covers the active layer. Thus, decrease of a maximum optical output value is prevented, and reliability of the laser chips is increased.

    摘要翻译： 半导体激光芯片具有活性层，形成激光芯片的下表面的全电极和激光芯片的发光端面。 在激光芯片的发光端面上形成Si薄膜。 在发光端面的上部形成上部Si薄膜，在其下部形成有下部Si薄膜。 较低的Si薄膜的厚度小于上部Si薄膜。 下部Si薄膜的厚度越小，防止全电极的成分扩散到覆盖有源层的上部Si薄膜。 因此，防止了最大光输出值的减小，激光芯片的可靠性提高。

    Anti-reflective (AR) coating for high index gain media
    14.
    发明申请
    Anti-reflective (AR) coating for high index gain media 有权
    用于高折射率增益介质的抗反射（AR）涂层

    公开(公告)号：US20050031010A1

    公开(公告)日：2005-02-10

    申请号：US10625950

    申请日：2003-07-23

    申请人： Mark McDonald

    发明人： Mark McDonald

    IPC分类号： H01S5/028 ,  H01S3/08

    CPC分类号： H01S5/0281 ,  H01S5/0285 ,  H01S5/0287

    摘要： Anti-reflective coatings may be used on laser high index gain media to mitigate reflection. An absentee layer may be used to compliment the antireflective coating to improve its antireflective performance over a broader range of wavelengths. The absentee layer comprises a material having a higher index of refraction than that of the gain media and has a thickness corresponding to multiple halfwave thicknesses related to the center wavelength output by the laser.

    摘要翻译： 抗反射涂层可用于激光高折射率增益介质以减轻反射。 可以使用缺席层来补偿抗反射涂层，以在更宽的波长范围内提高其抗反射性能。 缺席层包括具有比增益介质更高的折射率的材料，并且具有对应于与激光输出的中心波长相关的多个半波厚度的厚度。

    Semiconductor laser device, manufacturing method thereof, and laser bar locking thereof and laser bar locking apparatus
    15.
    发明申请
    Semiconductor laser device, manufacturing method thereof, and laser bar locking thereof and laser bar locking apparatus 失效
    半导体激光器件及其制造方法，激光棒锁定及激光棒锁定装置

    公开(公告)号：US20040228382A1

    公开(公告)日：2004-11-18

    申请号：US10773270

    申请日：2004-02-09

    申请人： Sharp Kabushiki Kaisha

    发明人： Noboru Oshima

    IPC分类号： H01S005/00

    CPC分类号： H01S5/0281

    摘要： A semiconductor laser chip has an active layer, an allover electrode forming a lower face of the laser chip and a light emitting end surface of the laser chip. A Si thin film is formed on the light emitting end surface of the laser chip. An upper Si thin film is formed on an upper portion of the light emitting end surface and a lower Si thin film is formed on a lower portion thereof. The lower Si thin film is smaller in thickness than the upper Si thin film. Smaller thickness of the lower Si thin film prevents a component of the allover electrode from diffusing into the upper Si thin film that covers the active layer. Thus, decrease of a maximum optical output value is prevented, and reliability of the laser chips is increased.

    摘要翻译： 半导体激光芯片具有活性层，形成激光芯片的下表面的全电极和激光芯片的发光端面。 在激光芯片的发光端面上形成Si薄膜。 在发光端面的上部形成上部Si薄膜，在其下部形成有下部Si薄膜。 较低的Si薄膜的厚度小于上部Si薄膜。 下部Si薄膜的厚度越小，防止全电极的成分扩散到覆盖有源层的上部Si薄膜中。 因此，防止了最大光输出值的减小，激光芯片的可靠性提高。

    Passivated optical device and method of forming the same
    16.
    发明授权
    Passivated optical device and method of forming the same 有权
    钝化光学器件及其形成方法

    公开(公告)号：US06744796B1

    公开(公告)日：2004-06-01

    申请号：US09538446

    申请日：2000-03-30

    申请人： Utpal Kumar Chakrabarti

    发明人： Utpal Kumar Chakrabarti

    IPC分类号： H01S500

    CPC分类号： H01S5/028 ,  H01L33/44 ,  H01S5/0281 ,  H01S5/0282

    摘要： A semiconductor optical device structure includes passivated facets formed by first removing the native oxide contaminant with a “non-reactive” molecular gas etchant, such as XeF2. As the oxide is removed, a passivation flux is introduced into the vacuum chamber so as to begin the process of forming a passivation layer to cover the exposed facet surface. The gas etchant is slowly turned off and the flux is increased so as to form a passivation layer of the desired thickness on the “cleaned” facet surface. A protective film is then be evaporated to cover the passivation layer.

    摘要翻译： 半导体光学器件结构包括通过首先用“非反应性”分子气体蚀刻剂例如XeF 2除去天然氧化物污染物形成的钝化小面。 当去除氧化物时，将钝化助熔剂引入真空室中，以开始形成钝化层以覆盖曝光的小面表面的工艺。 缓慢地关闭气体蚀刻剂，并且增加通量，以便在“清洁的”小面上形成所需厚度的钝化层。 然后将保护膜蒸发以覆盖钝化层。

    Method to obtain contamination free laser mirrors and passivation of these
    19.
    发明申请
    Method to obtain contamination free laser mirrors and passivation of these 失效
    获得无污染激光镜和钝化的方法

    公开(公告)号：US20030029836A1

    公开(公告)日：2003-02-13

    申请号：US09924605

    申请日：2001-08-09

    发明人： L. Karsten V. Lindstrom ,  N. Peter Blixt ,  Svante H. Soderholm ,  Anand Srinivasan ,  Carl-Fredrik Carlstrom

    IPC分类号： B44C001/22

    CPC分类号： H01S5/028 ,  H01S5/0201 ,  H01S5/0203 ,  H01S5/0281 ,  H01S5/18

    摘要： A method to obtain contamination free surfaces of a material chosen from the group comprising GaAs, GaAlAs, InGaAs, InGaAsP and InGaAs at crystal mirror facets for GaAs based laser cavities. The crystal mirrors facets are cleaved out exposed to an ambient atmosphere containing a material from the group comprising air, dry air, or dry nitrogen ambients. Any oxides and other foreign contaminants obtained during the ambient atmosphere exposure of the mirror facets are removed by dry etching in vacuum. Thereafter, a native nitride layer is grown on the mirror facets by treating them with nitrogen.

    摘要翻译： 一种在砷化镓基激光腔的晶体镜面处获得选自GaAs，GaAlAs，InGaAs，InGaAsP和InGaAs的材料的无污染表面的方法。 水晶镜面被切开，暴露于包含空气，干燥空气或干燥氮气环境中的材料的环境气氛中。 通过在真空中的干蚀刻来除去在镜面的环境大气暴露期间获得的任何氧化物和其它外来污染物。 此后，通过用氮气处理，在镜面上生长天然氮化物层。