公开(公告)号：US07213117B2

公开(公告)日：2007-05-01

申请号：US09805199

申请日：2001-03-14

Applicant: Masaki Wakabayashi ,  Ryuichi Ogawa ,  Kazuhiro Yaegawa ,  Susumu Kurioka ,  Kenji Ohno ,  Tadao Takeda ,  Hiroki Sutou ,  Masahiro Yoshizawa

Inventor： Masaki Wakabayashi ,  Ryuichi Ogawa ,  Kazuhiro Yaegawa ,  Susumu Kurioka ,  Kenji Ohno ,  Tadao Takeda ,  Hiroki Sutou ,  Masahiro Yoshizawa

IPC: G06F12/14

CPC classification number: H04Q3/64 ,  H04M3/51 ,  H04M2201/06 ,  H04M2201/34 ,  H04M2201/36 ,  H04M2201/38 ,  H04Q11/0471 ,  H04Q2213/13003 ,  H04Q2213/1305 ,  H04Q2213/1307 ,  H04Q2213/13072 ,  H04Q2213/13095 ,  H04Q2213/13103 ,  H04Q2213/13106 ,  H04Q2213/13209 ,  H04Q2213/13305 ,  H04Q2213/1332 ,  H04Q2213/13322

Abstract: A 1-chip microcomputer of the present invention has (a) a monitor flag for setting a flag indicating that a specified address space is accessed, (b) an access permission address range setting register, for setting an address range in which an access is permitted while the flag is set, (c) an access permission area detection circuit for judging whether the access is made within the address range thus set, (d) an access permission setting register, for setting whether or not an access with respect to an address other than the address range should be permitted, and (e) memory read-out control circuit and memory writing control circuit for controlling an access with respect to a nonvolatile memory based on a result thus judged and content set by the access permission setting register. With the arrangement, it is possible to provide a 1-chip microcomputer that maintains the security among application programs.

Abstract translation: 本发明的1片微型计算机具有（a）用于设定表示指定的地址空间被访问的标志的监视标志，（b）访问许可地址范围设定寄存器，用于设定访问权限的地址范围 （c）用于判断在如此设置的地址范围内是否进行访问的访问允许区域检测电路，（d）访问许可设置寄存器，用于设置是否访问相对于 应允许地址范围以外的地址，以及（e）存储器读出控制电路和存储器写入控制电路，用于基于由此判断的结果来控制对非易失性存储器的访问，以及由访问许可设置寄存器设置的内容 。 通过这种布置，可以提供一种在应用程序之间保持安全性的1片微型计算机。

公开(公告)号：US20030071317A1

公开(公告)日：2003-04-17

申请号：US10101162

申请日：2002-03-20

Inventor： Takasumi Ohyanagi ,  Atsuo Watanabe

IPC: H01L029/76

CPC classification number: H01L29/66681 ,  G09G3/28 ,  H01L21/76264 ,  H01L21/76283 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/0847 ,  H01L29/1083 ,  H01L29/66265 ,  H01L29/66674 ,  H01L29/7317 ,  H01L29/7824 ,  H04M3/005 ,  H04M3/18 ,  H04M2201/06

Abstract: An N-channel MOS field-effect transistor on an SOI substrate including a source electrode, drain and gate electrodes both disposed via a field oxide film, a gate oxide film, a high concentration P-type layer, a high concentration N-type layer contacting the source electrode and the gate oxide film, a high concentration N-type layer contacting the drain electrode, a p-body layer contacting the high concentration P-type and N-type layers and the gate oxide film. In this transistor, an N-type layer with a concentration higher than that of a drain region contacting the p-body layer constitutes a region covering at most 95% of the source-drain distance. Further, an N-type region having a concentration from 3null1016/cm3 to 1null1022/cm3 is provided near a buried oxide film under the drain electrode.

Abstract translation: 在SOI衬底上的N沟道MOS场效应晶体管，其包括经由场氧化膜设置的源电极，漏极和栅电极，栅极氧化膜，高浓度P型层，高浓度N型层 与源电极和栅极氧化膜接触，接触漏电极的高浓度N型层，与高浓度P型和N型层接触的p体层和栅氧化膜。 在该晶体管中，具有高于与p体层接触的漏极区域的浓度的N型层构成覆盖源极 - 漏极距离的至多95％的区域。 此外，在漏电极下方的埋置氧化膜附近设置浓度为3×10 16 / cm 3至1×10 22 / cm 3的N型区域。

公开(公告)号：US20240310887A1

公开(公告)日：2024-09-19

申请号：US18121508

申请日：2023-03-14

Applicant: QUALCOMM Incorporated

Inventor： Xingyi HUA ,  David Zixiang YANG ,  Francesco GATTA

IPC: G06F1/26 ,  H04M1/725

CPC classification number: G06F1/26 ,  H04M1/725 ,  H04M2201/02 ,  H04M2201/04 ,  H04M2201/06 ,  H04M2201/14

Abstract: A dual-VIO integrated circuit is configurable into either a first configuration in which a VIO power supply voltage has a first value or into a second configuration in which the VIO power supply voltage has a second value. The dual-VIO integrated circuit includes a smart start-up detection circuit that detects whether the integrated circuit is in the first configuration or the second configuration.

公开(公告)号：US11856122B2

公开(公告)日：2023-12-26

申请号：US17608160

申请日：2020-05-09

Applicant: Honor Device Co., Ltd.

Inventor： Guotong Zhou ,  Dong Ma ,  Xinwen Xu ,  Yan Wang

IPC: H04M1/23 ,  G06V40/13 ,  H04M1/02

CPC classification number: H04M1/236 ,  G06V40/1329 ,  H04M1/0277 ,  H04M2201/06

Abstract: An electronic device is provided. A lateral fingerprint recognition apparatus is in contact with a function button. An accommodating structure is arranged in the lateral fingerprint recognition apparatus. A stopping assembly is arranged on a side of a fingerprint hole close to the function button. Inserting a partial area of the stopping assembly into the accommodating structure enables the lateral fingerprint recognition apparatus, when pressed, to move in movement space of the accommodating structure on the side of the fingerprint hole close to the function button, so as to limit a displacement amount of the lateral fingerprint recognition apparatus within a specific range, implementing the functions of the lateral fingerprint recognition apparatus and of the function button, and preventing the lateral fingerprint recognition apparatus from being displaced from the originally designed position.

公开(公告)号：US20060171527A1

公开(公告)日：2006-08-03

申请号：US11027704

申请日：2004-12-30

Applicant: Michael Mills ,  Long Nguyen

Inventor： Michael Mills ,  Long Nguyen

IPC: H04M1/00

CPC classification number: H04M3/005 ,  H04M3/007 ,  H04M2201/06

Abstract: A driver is operated to drive signals from an integrated circuit. Operating the driver generates interference at substantially a first frequency that may interfere with circuitry sharing a power supply with the driver. A supply node is repeatedly coupled to and decoupled from the driver at substantially a second frequency higher than the first frequency to help supply power to the driver and to help prevent interference from propagating to circuitry sharing the power supply.

Abstract translation: 驱动器用于驱动集成电路的信号。 操作驱动器会产生基本上第一个频率的干扰，这可能会干扰与驱动器共享电源的电路。 电源节点在基本上高于第一频率的第二频率处重复地耦合到驱动器并从驱动器去耦，以帮助向驱动器供电，并且有助于防止干扰传播到共享电源的电路。

公开(公告)号：US06885067B2

公开(公告)日：2005-04-26

申请号：US10791764

申请日：2004-03-04

Applicant: Takasumi Ohyanagi ,  Atsuo Watanabe

Inventor： Takasumi Ohyanagi ,  Atsuo Watanabe

IPC: H01L21/331 ,  H01L21/336 ,  H01L21/762 ,  H01L21/77 ,  H01L21/8222 ,  H01L21/8248 ,  H01L21/8249 ,  H01L21/84 ,  H01L27/06 ,  H01L27/08 ,  H01L27/12 ,  H01L29/08 ,  H01L29/10 ,  H01L29/73 ,  H01L29/78 ,  H01L29/786 ,  H04M3/00 ,  H04M3/18 ,  H01L27/01

CPC classification number: H01L29/66681 ,  G09G3/28 ,  H01L21/76264 ,  H01L21/76283 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/0847 ,  H01L29/1083 ,  H01L29/66265 ,  H01L29/66674 ,  H01L29/7317 ,  H01L29/7824 ,  H04M3/005 ,  H04M3/18 ,  H04M2201/06

Abstract: A power IC for an automobile engine control unit incorporating at least one semiconductor device comprising an N-channel insulated-gate filed-effect transistor formed on an SOI substrate, having an N-type layer having a concentration higher than a concentration of an N-type layer in contact with a p-body layer contacting a gate oxide film of the transistor. The high concentration N-type layer is formed in a region covering at most 95% of the source-drain distance between the p-body layer and a drain electrode of the transistor in the silicon substrate over an interface of a buried oxide film, the silicon substrate being in contact with both the field oxide film and the high concentration N-type layer contacting the drain electrode.

Abstract translation: 一种用于汽车发动机控制单元的电力IC，其结合有至少一个半导体器件，该半导体器件包括形成在SOI衬底上的N沟道绝缘栅场效应晶体管，具有浓度高于N- 型层与与晶体管的栅极氧化膜接触的p体层接触。 在掩埋氧化膜的界面上，覆盖硅基板​​中的晶体管的p体层和漏电极的源极 - 漏极距离的至多95％的区域形成高浓度N型层， 硅衬底与场氧化物膜和接触漏电极的高浓度N型层接触。

公开(公告)号：US06750513B2

公开(公告)日：2004-06-15

申请号：US10393951

申请日：2003-03-24

Applicant: Takasumi Ohyanagi ,  Atsuo Watanabe

Inventor： Takasumi Ohyanagi ,  Atsuo Watanabe

IPC: H01L2701

CPC classification number: H01L29/66681 ,  G09G3/28 ,  H01L21/76264 ,  H01L21/76283 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/0847 ,  H01L29/1083 ,  H01L29/66265 ,  H01L29/66674 ,  H01L29/7317 ,  H01L29/7824 ,  H04M3/005 ,  H04M3/18 ,  H04M2201/06

Abstract: An N-channel MOS field-effect transistor on an SOI substrate including a source electrode, drain and gate electrodes both disposed via a field oxide film, a gate oxide film, a high concentration P-type layer, a high concentration N-type layer contacting the source electrode and the gate oxide film, a high concentration N-type layer contacting the drain electrode, a p-body layer contacting the high concentration P-type and N-type layers and the gate oxide film. In this transistor, an N-type layer with a concentration higher than that of a drain region contacting the p-body layer constitutes a region covering at most 95% of the source-drain distance. Further, an N-type region having a concentration from 3×1016/cm3 to 1×1022/cm3 is provided near a buried oxide film under the drain electrode.

Abstract translation: 在SOI衬底上的N沟道MOS场效应晶体管，其包括经由场氧化膜设置的源电极，漏极和栅电极，栅极氧化膜，高浓度P型层，高浓度N型层 与源电极和栅极氧化膜接触，接触漏电极的高浓度N型层，与高浓度P型和N型层接触的p体层和栅氧化膜。 在该晶体管中，具有高于与p体层接触的漏极区域的浓度的N型层构成覆盖源极 - 漏极距离的至多95％的区域。 此外，在漏电极下方的掩埋氧化膜附近提供浓度为3×10 16 / cm 3至1×10 22 / cm 3的N型区域。

公开(公告)号：US4920556A

公开(公告)日：1990-04-24

申请号：US309497

申请日：1989-02-13

Applicant: Keith K. Wong

Inventor： Keith K. Wong

IPC: H04M1/2745 ,  H04M1/80 ,  H04M3/428 ,  H04M11/04

CPC classification number: H04M1/274575 ,  H04M1/80 ,  H04M11/04 ,  H04M3/4285 ,  H04M2201/06

Abstract: An improved telephone with three built in features that provide added conveniences and additional benefits for the user. These features are: Money Saver Timer, which tells the caller the amount of time is left of the current message or toll unit on a long distance call; Telephone Panic Switch, when pressed, will activate a circuit to automatically call and broadcast an emergency message to a group of pre-stored numbers; Music On Hold cards, which allow the user to play different music programs for the HOLD feature. These cards can be changed frequently to provide different music programs to the frequent caller.

Abstract translation: 改进的电话具有三个内置功能，为用户提供额外的便利和额外的好处。 这些功能包括：节省费用的计时器，用于告知来电者长途电话当前消息或长途电话剩余的时间; 电话紧急开关按下时，将激活一个电路，以自动呼叫并将一个紧急消息广播给一组预先存储的号码; 音乐持卡，允许用户为HOLD功能播放不同的音乐节目。 这些卡可以频繁更改，以便为频繁的呼叫者提供不同的音乐节目。

公开(公告)号：US12101422B2

公开(公告)日：2024-09-24

申请号：US17720724

申请日：2022-04-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongwoon Kim ,  Eunsoo Park ,  Hyunsuk Choi

IPC: H04M1/02 ,  G06F1/16 ,  G06F3/041 ,  G06F3/044 ,  G06V40/13

CPC classification number: H04M1/0266 ,  G06F1/1656 ,  G06F3/0446 ,  G06V40/1306 ,  H04M1/0277 ,  G06F2203/04111 ,  H04M2201/06 ,  H04M2201/38

Abstract: An electronic device is provided, which includes a housing, a display, and a sensor panel that is disposed between the display and the housing and that senses input information of a stylus pen, in which the sensor panel includes a first sensor panel including an opening area and a second sensor panel disposed to cover at least part of the opening area and electrically connected with the first sensor panel, and the second sensor panel includes a first circuit board including a first sub-board and a second sub-board, at least part of the first sub-board and at least part of the second sub-board being spaced apart from each other to form a receiving space and a second circuit board, at least part of which being accommodated in the receiving space and surrounded by the first circuit board.

公开(公告)号：US20110121911A1

公开(公告)日：2011-05-26

申请号：US12948225

申请日：2010-11-17

Applicant: Koichiro KAMATA

Inventor： Koichiro KAMATA

IPC: H03C1/00

CPC classification number: H01L29/7869 ,  G06K19/07775 ,  H01L23/66 ,  H01L27/0629 ,  H01L28/20 ,  H01L28/40 ,  H01L29/78693 ,  H01L29/78696 ,  H01L2223/6677 ,  H03C1/36 ,  H04M2201/04 ,  H04M2201/06

Abstract: A modulation circuit includes a load and a transistor serving as a switch. The transistor has an oxide semiconductor layer in which hydrogen concentration is 5×1019/cm3 or less. The off-state current of the transistor is 1×10−13 A or less. A modulation circuit includes a load, a transistor serving as a switch, and a diode. The load, the transistor, and the diode are connected in series between the terminals of an antenna. The transistor has an oxide semiconductor layer in which hydrogen concentration is 5×1019/cm3 or less. An off-state current of the transistor is 1×10−13 A or less. On/off of the transistor is controlled in accordance with a signal inputted to a gate of the transistor. The load is a resistor, a capacitor, or a combination of a resistor and a capacitor.

Abstract translation: 调制电路包括负载和用作开关的晶体管。 该晶体管具有氢浓度为5×1019 / cm3以下的氧化物半导体层。 晶体管的截止电流为1×10-13A或更小。 调制电路包括负载，用作开关的晶体管和二极管。 负载，晶体管和二极管串联连接在天线的端子之间。 该晶体管具有氢浓度为5×1019 / cm3以下的氧化物半导体层。 晶体管的截止电流为1×10-13A或更小。 根据输入到晶体管的栅极的信号来控制晶体管的导通/截止。 负载是电阻器，电容器或电阻器和电容器的组合。